WK2 94V0
Abstract: transistor wu1 94v0 wk2 wk1 sot-23 wk2 sot 23 wu1 sot-23 CHDTA144WUPT wk2 94v-0 marking wu1 marking wk1
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Collector Collector to DC Current Gain Emitter Current Marking Voltage HFE @ VO / IO VCC IO V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Equivalent Gain Outline
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CHDTA114TMPT
CHDTA115TMPT
CHDTA124TMPT
CHDTA143TMPT
CHDTA144TMPT
CHDTA114TEPT
CHDTA115TEPT
CHDTA124TEPT
CHDTA143TEPT
CHDTA144TEPT
WK2 94V0
transistor wu1
94v0 wk2
wk1 sot-23
wk2 sot 23
wu1 sot-23
CHDTA144WUPT
wk2 94v-0
marking wu1
marking wk1
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WK2 94V0
Abstract: wk2 94v-0 transistor wu1 wk1 sot-23 wk2 sot 23 94v0 wk2 marking wk1 wu1 sot-23 marking wk2 marking wu1
Text: SURFACE MOUNT DEVICES FOR HYBRID APPLICATIONS TYPE Marking Collector Collector to DC Current Gain Current Emitter Voltage HFE @ VCE / IC VCEO IC V mA Min-Max V / mA PLASTIC MATERIAL USED CARRIES UL 94V-0 Saturation Typical Bias Voltage Power Gain Resistor Dissipation Outline
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CHDTA114TM
CHDTA115TM
CHDTA124TM
CHDTA143TM
CHDTA144TM
CHDTA114TE
CHDTA115TE
CHDTA124TE
CHDTA143TE
CHDTA144TE
WK2 94V0
wk2 94v-0
transistor wu1
wk1 sot-23
wk2 sot 23
94v0 wk2
marking wk1
wu1 sot-23
marking wk2
marking wu1
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transistor wu1
Abstract: marking wu1 CHDTA144WUPT wu1 sot-23
Text: CHENMKO ENTERPRISE CO.,LTD CHDTA144WUPT SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. SC-70/SOT323
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CHDTA144WUPT
SC-70/SOT-323
SC-70/SOT323)
-100uA;
-10mA;
tp300uS;
100MHz
transistor wu1
marking wu1
CHDTA144WUPT
wu1 sot-23
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CHDTA144WUGP
Abstract: transistor wu1 wu1 sot-23 CHDTA144WU
Text: CHENMKO ENTERPRISE CO.,LTD CHDTA144WUGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE SC-70/SOT-323 * Small surface mounting type. SC-70/SOT323
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CHDTA144WUGP
SC-70/SOT-323
SC-70/SOT323)
-100uA;
-10mA;
300uS;
100MHz
CHDTA144WUGP
transistor wu1
wu1 sot-23
CHDTA144WU
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WU1-5
Abstract: No abstract text available
Text: D WIMA Snubber FKP Snubber FKP Capacitors for High Pulse Applications with Metal Foil Electrodes, Schoopage Contacts and Self-Healing Internal Series Connection Special Features Electrical Data ˜ High pulse duty ˜ Self-healing ˜ Particularly reliable contactconfigurations: 4-lead versions and
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2002/95/EC
WU1-5
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WIMA Black Box
Abstract: snubber capacitor for low frequency WIMA 0,068 snubber overshoot wima 0,47 630 10 snubber resistance of IGBT wima wima 0,047 630 snubber snubber capacitor applications
Text: Snubber capacitors for best contacts Decades of experience with polypropylene pulse capacitors for any conceivable application are involved in the development of the WIMA Snubber MKP and WIMA Snubber FKP capacitor series for high power conversion. WIMA Snubber capacitors are available both in doublesided metallized pulse version - WIMA Snubber MKP - and
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VDC/650
VDC/700
WIMA Black Box
snubber capacitor for low frequency
WIMA 0,068
snubber overshoot
wima 0,47 630 10
snubber resistance of IGBT
wima
wima 0,047 630
snubber
snubber capacitor applications
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wima snubber mkp
Abstract: WIMA .47 1600 650 wima 2.2 uF SNUBBER MKP 2000 Vdc wima 0,047 630 wima 0,22 capacitor snubber Polypropylene 1 uf WIMA 0,068
Text: Snubber capacitors for best contacts O Low inductance construction achieved by end-surface contacting. Decades of experience with polypropylene pulse capacitors for any conceivable application are involved in the development of the WIMA Snubber MKP and WIMA
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WU15
Abstract: No abstract text available
Text: D WIMA Snubber MKP Snubber MKP Capacitors for Pulse Applications with Double-Sided Metallized Electrodes, Schoopage Contacts and Internal Series Connection Special Features Electrical Data ˜ Pulse duty construction ˜ Self-healing ˜ Particularly reliable contactconfigurations: 4-lead versions and
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2002/95/EC
WU15
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capacitor snubber Polypropylene 1 uf
Abstract: MKP wima R 46 MKP WIMA FKP 4 SNUBBER MKP 61E-15 wima fkp 1 wima 2.2 uF WIMA MKP 10 WIMA 0.1 63
Text: D WIMA Snubber Capacitors with Plates or Lead Terminations for Best Contacts WIMA Snubber MKP WIMA Snubber FKP Development of the WIMA Snubber MKP and WIMA Snubber FKP capacitor series for high power conversion is based on decades of experience with Polypropylene
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wima snubber mkp
Abstract: snubber mkp MKP wima wima 2.2 uF 0615B
Text: D WIMA Snubber Capacitors with Plates or Lead Terminations for Best Contacts WIMA Snubber MKP WIMA Snubber FKP Development of the WIMA Snubber MKP and WIMA Snubber FKP capacitor series for high power conversion is based on decades of experience with Polypropylene
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Untitled
Abstract: No abstract text available
Text: WIMASnubberMKP NEW High performance IGBT-Snubber Kondensatoren High performance IGBT-snubber capacitors O Induktionsarmer Aufbau mit Stirnkontaktierung. O Hohe Impulsbelastbarkeit. O Verlustarmes Polypropylendielektrikum. O Innere Reihenschaltung. O Ausheilfähiger Aufbau. O Verfügbar in verschiedenen Anschlusskonfigurationen.
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5x11x18
7x14x18
8x15x18
5x19x26
11x21x26
11x21x31
13x24x31
15x26x31
17x29x31
19x30x31
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Untitled
Abstract: No abstract text available
Text: Snubber capacitors for best contacts Basierend auf jahrzehntelanger Erfahrung mit PolypropylenImpulskondensatoren, wurden die Reihen WIMA Snubber FKP und WIMA Snubber MKP für die Bedürfnisse der HochleistungsUmrichtertechnik entwickelt. Decades of experience with polypropylene pulse capacitors
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5x11x18
7x14x18
8x15x18
5x19x26
11x21x26
11x21x31
13x24x31
15x26x31
17x29x31
19x30x31
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SN65HVD10X
Abstract: ELMOS E981 ELMOS SEMICONDUCTOR SN65HVD101RGB
Text: SN65HVD101 SN65HVD102 www.ti.com SLLSE84A – MAY 2011 – REVISED MARCH 2013 IO-LINK PHY for Device Nodes Check for Samples: SN65HVD101, SN65HVD102 FEATURES 1 • • • • • • • Configurable CQ Output: Push-Pull, High-Side, or Low-Side for SIO Mode
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SN65HVD101
SN65HVD102
SLLSE84A
SN65HVD101,
20-pin
HVD102
SN65HVD10X
ELMOS
E981
ELMOS SEMICONDUCTOR
SN65HVD101RGB
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SN65HVD101RGB
Abstract: No abstract text available
Text: SN65HVD101 SN65HVD102 www.ti.com SLLSE84A – MAY 2011 – REVISED MARCH 2013 IO-LINK PHY for Device Nodes Check for Samples: SN65HVD101, SN65HVD102 FEATURES 1 • • • • • • • Configurable CQ Output: Push-Pull, High-Side, or Low-Side for SIO Mode
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SN65HVD101
SN65HVD102
SLLSE84A
SN65HVD101,
SN65HVD101
20-pin
HVD102
SN65HVD101RGB
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marking wu1
Abstract: marking WU2 marking code wu2 L9952GXP
Text: UM0563 User manual L9952GXP software driver user manual Introduction The L9952GXP is a complex device described in the L9952GXP datasheet and the L9952GXP power management system IC application note AN2751 . For further information on these documents, please contact STMicroelectronics. To simplify use of
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UM0563
L9952GXP
AN2751)
marking wu1
marking WU2
marking code wu2
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MC33904
Abstract: MC33905D V/AN4770
Text: Freescale Semiconductor, Inc. Application Note Document Number: AN4770 Rev. 1.0, 9/2013 Implementing the MC33903/4/5 CAN and LIN System Basis Chip 1 Introduction This document provides in-depth guidance for module design and development implementing the MC33903/4/5
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AN4770
MC33903/4/5
MC33903/4/5
MC33904
MC33905D
V/AN4770
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Untitled
Abstract: No abstract text available
Text: LTC2874 Quad IO-Link Master Hot Swap Controller and PHY Description Features IO-Link Compatible COM1/COM2/COM3 8V to 30V Operation Hot Swap™ Controller Protected Supply Outputs Discrete Power MOSFETs for Ruggedness and Flexibility n Configurable 100mA (4-Port), 200mA (2-Port), or
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LTC2874
100mA
200mA
400mA
38-Lead
LTC2872
LTM2881
RS485/RS422
20Mbps,
2500VRMS
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Untitled
Abstract: No abstract text available
Text: LTC2874 Quad IO-Link Master Hot Swap Controller and PHY DESCRIPTION FEATURES IO-Link Compatible COM1/COM2/COM3 8V to 34V Operation Hot Swap Controller Protected Supply Outputs Discrete Power MOSFETs for Ruggedness and Flexibility n Configurable 100mA (4-Port), 200mA (2-Port), or
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LTC2874
100mA
200mA
400mA
38-Lead
LTC2872
LTM2881
RS485/RS422
20Mbps,
2500VRMS
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Untitled
Abstract: No abstract text available
Text: NCV7462 Product Preview LIN/CAN SBC/System-IC The NCV7462 is a monolithic LIN/CAN System−Basic−Chip with enhanced feature set useful in Automotive Body Control systems. Besides the bus interfaces the IC features two 5 V voltage regulators, high−side and low−side switches to control LED’s and relays, and
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NCV7462
SSOP36-EP
NCV7462/D
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marking wu1
Abstract: marking code wu2 wux 344
Text: NCV7462 LIN/CAN SBC/System-IC The NCV7462 is a monolithic LIN/CAN System−Basic−Chip with enhanced feature set useful in Automotive Body Control systems. Besides the bus interfaces the IC features two 5 V voltage regulators, high−side and low−side switches to control LED’s and relays, and
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NCV7462
SSOP36-EP
NCV7462/D
marking wu1
marking code wu2
wux 344
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PDF
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marking code wu2
Abstract: No abstract text available
Text: NCV7462 LIN/CAN SBC/System-IC The NCV7462 is a monolithic LIN/CAN System−Basic−Chip with enhanced feature set useful in Automotive Body Control systems. Besides the bus interfaces the IC features two 5 V voltage regulators, high−side and low−side switches to control LED’s and relays, and
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NCV7462
SSOP36-EP
NCV7462/D
marking code wu2
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K 2056 transistor
Abstract: pnp germanium transistor BUL 3810 2N331 Germanium Transistor 2N3317
Text: MIL -£ -19500/4D 1 Ü November 1966 SUPERSEDING MIL-S-19500/4C 17 January 1962 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, LOW-POWER TYPE 2N331 This specification is mandatory for use by all D epart ments and Agencies of the Department of Defense.
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-19500/4D
MIL-S-19500/4C
2N331
2N331.
K 2056 transistor
pnp germanium transistor
BUL 3810
2N331
Germanium Transistor
2N3317
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KTC3879S
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KTC3879S EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. FEATURE • High Power Gain : Gpe=29dB Typ. (f=10.7MHz) DIM A B C D E G H J K L M N P MAXIMUM RATINGS (Ta=25°C) SYMBOL RATING UNIT
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KTC3879S
11V1J1Z,
KTC3879S
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SC4215 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 1 5 HIGH FREQUENCY AM PLIFIER APPLICATIONS. U n it in mm FM, RF, MIX, IF AM PLIFIER APPLICATIONS. 2.1 ± 0.1 1.25±0.1 • Sm a ll Reverse Transfer Capacitance oo + 1 1 - : C re = 0.55pF Typ.
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2SC4215
100MHz)
10MHz
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