transistor marking code wgs
Abstract: No abstract text available
Text: BCR 116W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 116W WGs 1=B UPON INQUIRY Package 2=E 3=C SOT-323
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Original
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OT-323
Nov-26-1996
transistor marking code wgs
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PDF
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zkb* vac
Abstract: PLC GE FANUC VAC ZKB 420 Current Transformer ZKB siemens 230 gas discharge tube 90 88 pm WDU-2.5 fanuc 11 MF 101120000 vac zkb 8708660000
Text: RELAYS FIELDBUS CONNECTORS CIRCUIT BREAKERS OVERVOLTAGE PROTECTORS CABLE AND ELECTRONIC FUSES PRODUCTS DIN-RAIL MOUNTED TERMINAL BLOCKS TOOLS & MARKING SYSTEMS PROTECTED CONNECTORS PCB CONNECTORS & TERMINAL BLOCKS SIGNAL CONDITIONERS POWER SUPPLIES WIRING SOLUTIONS
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Original
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204-B
LIT0120
zkb* vac
PLC GE FANUC
VAC ZKB 420
Current Transformer ZKB
siemens 230 gas discharge tube 90 88 pm
WDU-2.5
fanuc 11 MF
101120000
vac zkb
8708660000
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PDF
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wgs SOT-23
Abstract: transistor marking code wgs Q62702-C2337
Text: BCR 116 NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ Type Marking Ordering Code Pin Configuration BCR 116 WGs 1=B Q62702-C2337 Package 2=E 3=C SOT-23 Maximum Ratings
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Original
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Q62702-C2337
OT-23
Dec-18-1996
wgs SOT-23
transistor marking code wgs
Q62702-C2337
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PDF
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VSO05561
Abstract: SOT-323 marking WGS
Text: BCR 116W NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ; R2=47kΩ 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR 116W WGs Pin Configuration 1=B 2=E Package
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Original
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VSO05561
EHA07184
OT-323
Oct-19-1999
VSO05561
SOT-323 marking WGS
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PDF
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BCR116W
Abstract: VSO05561
Text: BCR116W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k; R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR116W WGs Pin Configuration 1=B 2=E Package 3=C SOT323
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Original
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BCR116W
VSO05561
EHA07184
OT323
Jul-16-2001
BCR116W
VSO05561
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PDF
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BCR116
Abstract: EHA07184
Text: BCR116 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR116 WGs Pin Configuration 1=B 2=E Package 3=C SOT23
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Original
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BCR116
VPS05161
EHA07184
Nov-29-2001
BCR116
EHA07184
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PDF
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BCR116W
Abstract: VSO05561
Text: BCR116W NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k; R2=47k 2 C 3 1 R1 VSO05561 R2 1 2 B E EHA07184 Type Marking BCR116W WGs Pin Configuration 1=B 2=E Package 3=C SOT323
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Original
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BCR116W
VSO05561
EHA07184
OT323
Nov-29-2001
BCR116W
VSO05561
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PDF
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BCR116
Abstract: No abstract text available
Text: BCR116 NPN Silicon Digital Transistor 3 Switching circuit, inverter, interface circuit, driver circuit Built in bias resistor R1=4.7k, R2=47k 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR116 WGs Pin Configuration 1=B 2=E Package 3=C SOT23
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Original
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BCR116
VPS05161
EHA07184
Jul-16-2001
BCR116
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PDF
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wgs SOT-23
Abstract: No abstract text available
Text: BCR 116 NPN Silicon Digital Transistor 3 • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kΩ, R2=47kΩ 2 C 3 1 R1 VPS05161 R2 1 2 B E EHA07184 Type Marking BCR 116 WGs Pin Configuration 1=B 2=E Package
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Original
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VPS05161
EHA07184
OT-23
Oct-19-1999
wgs SOT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: WGSMF05C 5-Line ESD Array Peak Pulse Power 100 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 100 Watts Peak Pulse Power per Line(tp=8/20µs) * Protects Up To Four / Five I/O Lines * Ultra-Small SC-89 Package (1.6 x 1.6 x 0.55mm) Requires Less Than 2.9mm2 Of PCB Area
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Original
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WGSMF05C
SC-89
IEC61000-4-2
IEC61000-4-4
5/50ns
OT-563
OT-563
10sec.
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PDF
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EN6100-4
Abstract: SOT-563 sot-563 EC
Text: WGSMF05C 5-Line TVS Array Peak Pulse Power 100 Watts Reverse Working Voltage 5.0 VOLTS P b Lead Pb -Free Features: * 100 Watts Peak Pulse Power per Line(tp=8/20 s) * Monolithic Structure * Low Clamping Voltage * IEC Compatibility(EN6100-4) 61000-4-2(ESD): Air–15kV, Contact-8kV
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Original
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WGSMF05C
EN6100-4)
5/50ns
OT-563
OT-563
09-Oct-07
EN6100-4
SOT-563
sot-563 EC
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PDF
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BCR116
Abstract: BCR116F BCR116L3 BCR116S BCR116T BCR116W
Text: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see
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Original
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BCR116.
BCR116S:
BCR116/F/L3
BCR116T/W
BCR116S
EHA07184
EHA07174
BCR116
BCR116F
BCR116
BCR116F
BCR116L3
BCR116S
BCR116T
BCR116W
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PDF
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infineon marking code B2 SOT23
Abstract: marking WGs sot23 transistor marking code wgs marking code R2 sot23 BCR108T BCR116 BCR116F BCR116S BCR116W SC75
Text: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2 =47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see
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Original
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BCR116.
BCR116S:
BCR116/F
BCR116W
BCR116S
EHA07184
EHA07174
BCR116
BCR116F
infineon marking code B2 SOT23
marking WGs sot23
transistor marking code wgs
marking code R2 sot23
BCR108T
BCR116
BCR116F
BCR116S
BCR116W
SC75
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PDF
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wgs SOT-23
Abstract: transistor marking code wgs
Text: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2 =47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see
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Original
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BCR116.
BCR116S:
BCR116/F
BCR116W
BCR116S
EHA07184
EHA07174
BCR116
BCR116F
wgs SOT-23
transistor marking code wgs
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PDF
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marking WGs sot23
Abstract: transistor marking code wgs infineon marking code B1 SOT23
Text: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see
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Original
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BCR116.
BCR116S:
BCR116
BCR116W
BCR116S
EHA07184
EHA07174
BCR116S
marking WGs sot23
transistor marking code wgs
infineon marking code B1 SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: BCR116. NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7 kΩ, R2=47 kΩ • BCR116S: Two internally isolated transistors with good matching in one multichip package • BCR116S: For orientation in reel see
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Original
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BCR116.
BCR116S:
BCR116
BCR116W
BCR116S
EHA07184
EHA07174
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PDF
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Untitled
Abstract: No abstract text available
Text: SN74LV1T32 www.ti.com SCLS741 – NOVMEBER 2013 Single Power Supply 2-INPUT POSITIVE OR GATE CMOS Logic Level Shifter Check for Samples: SN74LV1T32 FEATURES DESCRIPTION • SN74LV1T32 is Low Voltage CMOS gate logic and operates in wider voltage range for portable
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Original
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SN74LV1T32
SCLS741
SN74LV1T32
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 116W NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=4.7kfl, R2=47kfi _ 0_ LT t r Marking Ordering Code Pin Configuration BCR 116W WGs UPON INQUIRY 1= B Package LU
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OCR Scan
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47kfi)
OT-323
B35bG5
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR116W NPN Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R i=4.7kii, R2=47kii & Pin Configuration Package II CO 1= B O UPON INQUIRY li WGs LU Marking Ordering Code BCR 116W
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OCR Scan
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47kii)
BCR116W
OT-323
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PDF
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wgs SOT-23
Abstract: transistor B 116 transistor marking code wgs Q62702-C2337 marking WGs
Text: SIEMENS BCR 116 NPN Silicon Digital Transistor •Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor R-|=4.7k£i, R2=47ki2 1= B Q62702-C2337 Package 2=E II Pin Configuration WGs o Marking Ordering Code BCR 116 CO Type
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OCR Scan
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47ki2)
Q62702-C2337
OT-23
300ns;
wgs SOT-23
transistor B 116
transistor marking code wgs
Q62702-C2337
marking WGs
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 116 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, driver circuit >Built in bias resistor Ri=4.7k£2, R2=47k£2 n TT Ordering Code Pin Configuration WGs Q62702-C2337 1= B Package 2=E o Marking BCR 116 II CO Type
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OCR Scan
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Q62702-C2337
OT-23
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PDF
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ss98 transistor
Abstract: transistor marking code wgs
Text: SIEMENS BSS 98 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • ^GS th = 0.8.1.6 V Type BSS 98 Vds 50 V Type BSS 98 BSS 98 BSS 98 Ordering Code Q62702-S053 Q62702-S517 Q62702-S635 b 0.3 A %S(on) 3.5 £2 Package Marking
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OCR Scan
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Q62702-S053
Q62702-S517
Q62702-S635
E6288
E6296
E6325
BSS98
ss98 transistor
transistor marking code wgs
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PDF
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PH marking code sot223
Abstract: No abstract text available
Text: SIEMENS BSP 17 SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Avalanche rated • ^ G S th = 2 .1 Type .4 .0 V ^DS(on) BSP 17 Vds 50 V Type BSP 17 Ordering Code Q67000-S220 3.2 A 0.1 fl Package Marking SOT-223 BSP 17 Tape and Reel Information
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OCR Scan
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OT-223
Q67000-S220
E6327
PH marking code sot223
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PDF
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fr5 transistor
Abstract: bfs17 Motorola transistor SOT23 w7 BSR56 motorola MN transistor BFS17 BSR57 BSR58 BSS63 BSS64
Text: n O T O R O L A SC Í X S T R S / R 6367254 F> W|b3b?5SM "Tt MOTOROLA SC XSTRß/R OüantM 96D 8 1 9 6 4 F D r - 3 h / s M A X IM U M R A TIN G S Sym bol Value U nit Collector-Em itter Voltage VCEO 15 Vdc Collector-Base Voltage VCBO 25 Vdc Sym bol Max U nit
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OCR Scan
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BFS17
fr5 transistor
bfs17 Motorola
transistor SOT23 w7
BSR56
motorola MN transistor
BFS17
BSR57
BSR58
BSS63
BSS64
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PDF
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