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    MARKING TH SOT23-6 P MOSFET Search Results

    MARKING TH SOT23-6 P MOSFET Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING TH SOT23-6 P MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2sc3052ef

    Abstract: 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor
    Text: Small Signal Discretes Selection Guide [ www.infineon.com/smallsignaldiscretes ] 2 Contents Selection Guide 4 RF Bipolar Transistors & Active Bias Controller 4 RF Switches 6 RF MMICs 7 RF Diodes 8 RF MOSFET 16 Schottky Diodes 18 ESD and EMI Protection Devices and Filters


    Original     		PDF 24GHz BF517 B132-H8248-G5-X-7600 2sc3052ef 2n2222a SOT23 TRANSISTOR SMD MARKING CODE s2a 1N4148 SMD LL-34 TRANSISTOR SMD CODE PACKAGE SOT23 2n2222 sot23 TRANSISTOR S1A 64 smd 1N4148 SOD323 semiconductor cross reference toshiba smd marking code transistor

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS ESD N-Channel SMD MOSFET 2N7002K List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002K METHOD-1027 500hrs. MIL-STD-750D METHOD-1051 METHOD-1056 1000hrs. METHOD-1038

    JESD22-A108C

    Abstract: JESD22-A108-C JESD22A-101-B
    Text: Formosa MS N-Channel MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		PDF 2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C 10min 10min JESD22-A104-B JESD22-A108C JESD22-A108-C JESD22A-101-B

    JESD22-A108C

    Abstract: 2N7002K
    Text: Formosa MS N-Channel SMD MOSFET ESD Protection 2N7002K List List. 1 Package outline. 2


    Original     		PDF 2N7002K 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C JESD22-A104-B 10min /10min JESD22-A108C 2N7002K

    dmf sot23

    Abstract: DMP2160U DMP2160U-7 J-STD-020D
    Text: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance • 80 mΩ @ VGS = -4.5V • 100 mΩ @ VGS = -2.5V • 140 mΩ @ VGS = -1.8V Very Low Gate Threshold Voltage VGS th ≤ 1V


    Original     		PDF DMP2160U OT-23 J-STD-020D DS31586 dmf sot23 DMP2160U DMP2160U-7 J-STD-020D

    12V 30A 3 pin mosfet

    Abstract: MARKING TR SOT23-3 P MOSFET st2301A MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A
    Text: ST2301A P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST2301A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for


    Original     		PDF ST2301A ST2301A OT-23 -20V/-2 OT-23 12V 30A 3 pin mosfet MARKING TR SOT23-3 P MOSFET MOSFET P-channel SOT-23 MOSFET P channel SOT-23 marking 415 sot23 MOSFET P SOT-23 MARKING CODE 16 transistor sot23 P channel MOSFET 1A mosfet 20v 30A

    st9401

    Abstract: MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y
    Text: ST9401 P Channel Enhancement Mode MOSFET -3.0A DESCRIPTION ST9401 is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for


    Original     		PDF ST9401 ST9401 OT-23 -20V/-2 MARKING TR SOT23-3 P MOSFET MOSFET P-Channel sot-23 MOSFET P channel SOT-23 marking 415* sot23 P-Channel SOT-23 Power MOSFET MARKING CODE 16 transistor sot23 V1 SOT23-3 12V 30A 3 pin mosfet *S01Y

    MOSFET P channel SOT-23

    Abstract: 20A SOT-23 SOT-23 MARKING 20A 01DA MOSFET P-Channel sot-23 ST2301DS ST2301D 20A p MOSFET MARKING TR SOT23-3 P MOSFET mosfet low vgs sot-23
    Text: ST2301D P Channel Enhancement Mode MOSFET -2.0A DESCRIPTION The ST2301D is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance.


    Original     		PDF ST2301D ST2301D OT-23 -20V/-2 180m-ohm -20V/-1 360m-ohm MOSFET P channel SOT-23 20A SOT-23 SOT-23 MARKING 20A 01DA MOSFET P-Channel sot-23 ST2301DS 20A p MOSFET MARKING TR SOT23-3 P MOSFET mosfet low vgs sot-23

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMSBSS123 120sec 260sec 30sec DS-231146

    Untitled

    Abstract: No abstract text available
    Text: MOSFET BSS138-G N-Channel 50-V D-S MOSFET RoHS Device Features SOT-23 1 : Gate 2 : Source 3 : Drain -High density cell design for extremely low RDS(ON). -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 -Case: SOT-23, molded plastic.


    Original     		PDF BSS138-G OT-23 OT-23, MIL-STD-750, QW-BTR40

    MOSFET P channel SOT-23

    Abstract: MOSFET P-Channel sot-23 MARKING CODE 16 transistor sot23 MARKING TR SOT23-3 P MOSFET st2005
    Text: ST2005SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2005SRG is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are


    Original     		PDF ST2005SRG ST2005SRG OT-23 -20V/-3 40m-ohm OT-23 MOSFET P channel SOT-23 MOSFET P-Channel sot-23 MARKING CODE 16 transistor sot23 MARKING TR SOT23-3 P MOSFET st2005

    SOT-23

    Abstract: No abstract text available
    Text: Formosa MS N-Channel Power MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMSBSS123 120sec 260sec 30sec DS-231146 SOT-23

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS N-Channel Small Signal MOSFET FMSBSS138 List List. 1 Package outline. 2


    Original     		PDF FMSBSS138 120sec 260sec 30sec DS-231147

    SMD mosfet MARKING code TJ

    Abstract: MOSFET SMD MARKING CODE smd mosfet MOSFET marking smd POWER MOSFET P1 smd marking code 125OC SMD mosfet MARKING code T FMSBSS2310 FMSBSS123
    Text: Formosa MS SMD MOSFET FMSBSS123 List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMSBSS123 MIL-STD-750D METHOD-1051 125OC 1000hrs. METHOD-1038 175OC METHOD-1031 SMD mosfet MARKING code TJ MOSFET SMD MARKING CODE smd mosfet MOSFET marking smd POWER MOSFET P1 smd marking code SMD mosfet MARKING code T FMSBSS2310 FMSBSS123

    DMN2050L

    Abstract: DMN2050L-7 J-STD-020D
    Text: DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PROD UCT • • • • • • • Mechanical Data • • Low On-Resistance • 29mΩ @VGS = 4.5V • 50mΩ @VGS = 2.5V • 100mΩ @VGS = 2.0V


    Original     		PDF DMN2050L AEC-Q101 OT-23 J-STD-020D DS31502 DMN2050L DMN2050L-7 J-STD-020D

    DMP3130L-7

    Abstract: marking P5S
    Text: DMP3130L P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • Mechanical Data • • Low On-Resistance: • RDS ON < 77mΩ @ VGS = -10V • RDS(ON) < 95mΩ @ VGS = -4.5V


    Original     		PDF DMP3130L OT-23 OT-23 J-STD-020D MIL-STD-202, DS31524 DMP3130L-7 marking P5S

    DMP2160U

    Abstract: DMP2160U-7 MOSFET P channel SOT-23
    Text: DMP2160U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • Low On-Resistance • 80 mΩ @ VGS = -4.5V • 100 mΩ @ VGS = -2.5V • 140 mΩ @ VGS = -1.8V


    Original     		PDF DMP2160U OT-23 J-STD-020 DS31586 DMP2160U DMP2160U-7 MOSFET P channel SOT-23

    DMN3050S

    Abstract: J-STD-020D
    Text: DMN3050S N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features NEW PRODUCT • • • • • • • • Mechanical Data • • Low On-Resistance: 35mΩ @ VGS = 10V 50mΩ @ VGS = 4.5V Low Gate Threshold Voltage


    Original     		PDF DMN3050S OT-23 J-STD-020D MIL-STD-202, DS31503 DMN3050S J-STD-020D

    irlml6346

    Abstract: IRLML6346TRPBF diode sot-23 marking AG
    Text: PD - 97584A IRLML6346TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 63 m 80 m RDS on max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) *   ' 6  Micro3TM (SOT-23) IRLML6346TRPbF Application(s) •Load/ System Switch Features and Benefits Features


    Original     		PDF 7584A IRLML6346TRPbF OT-23) OT-23 AN-994. irlml6346 IRLML6346TRPBF diode sot-23 marking AG

    Untitled

    Abstract: No abstract text available
    Text: DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data Features N EW PRODU CT • • • • • • • • • Low On-Resistance • 29mΩ @VGS = 4.5V • 50mΩ @VGS = 2.5V • 100mΩ @VGS = 2.0V Very Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN2050L AEC-Q101 OT-23 J-STD-020D DS31502

    2N7002H

    Abstract: No abstract text available
    Text: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002 1000hours JESD22-A108-C JESD22-B102-D 168hours JESD22-A102-C JESD22-A104-B 10min /10min 2N7002H

    2N7002H

    Abstract: 2N7002-H RG 702 Diode smd diode 2n7002 marking code 2N7002 MARKING DIODE smd marking 702 JESD22-A108C JESD22-A108-C POWER MOSFET P1 smd marking code 2N7002 SMD marking
    Text: Formosa MS N-Channel SMD MOSFET 2N7002 List List. 1 Package outline. 2 Features. 2


    Original     		PDF 2N7002 JESD22-A108-C 1000hours JESD22-B102-D 168hours JESD22-A102-C 10min 10min JESD22-A104-B 2N7002H 2N7002-H RG 702 Diode smd diode 2n7002 marking code 2N7002 MARKING DIODE smd marking 702 JESD22-A108C JESD22-A108-C POWER MOSFET P1 smd marking code 2N7002 SMD marking

    IRLML6346TR

    Abstract: No abstract text available
    Text: PD - 97584A IRLML6346TRPbF HEXFET Power MOSFET VDS 30 V VGS Max ± 12 V 63 m 80 m RDS on max (@VGS = 4.5V) RDS(on) max (@VGS = 2.5V) *   ' 6  Micro3TM (SOT-23) IRLML6346TRPbF Application(s) •Load/ System Switch Features and Benefits Features


    Original     		PDF 7584A IRLML6346TRPbF OT-23) OT-23 AN-994. IRLML6346TR

    Untitled

    Abstract: No abstract text available
    Text: Formosa MS SMD MOSFET FMS2305A List List. 1 Package outline. 2 Features. 2


    Original     		PDF FMS2305A 500hrs. MIL-STD-750D METHOD-1056 1000hrs. METHOD-1038 METHOD-1031 JESD22-A102