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    MARKING TD MOSFET Search Results

    MARKING TD MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MARKING TD MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: TC7320 Six Pair, N- and P-Channel, Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320FG consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source


    Original     		PDF TC7320 TC7320FG 32-lead MS-026, DSFP-TC7320 B122007

    Diode marking MF

    Abstract: No abstract text available
    Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.625 @ VIN = 4.5 V "0.43 0.890 @ VIN = 2.5 V "0.36 1.25 @ VIN = 1.8 V "0.3 D D D D D D TrenchFETr Power MOSFET Pb-free 1.8 to 8-V Input Available


    Original     		PDF Si1040X 000-V SC89-6 S-50460--Rev. 14-Mar-05 Diode marking MF

    L2SK3018WT1G

    Abstract: l2sk3018
    Text: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G S-L2SK3018WT1G • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits.


    Original     		PDF L2SK3018WT1G S-L2SK3018WT1G SC-70 AEC-Q101 L2SK3018WT1G l2sk3018

    Untitled

    Abstract: No abstract text available
    Text: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320FG consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source


    Original     		PDF TC7320 TC7320FG 32-lead MS-026, DSFP-TC7320 B020808

    Untitled

    Abstract: No abstract text available
    Text: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320 consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source


    Original     		PDF TC7320 32-lead MS-026, DSFP-TC7320 B041408

    Untitled

    Abstract: No abstract text available
    Text: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description Six N- and P-channel MOSFET pairs Integrated gate-to-source resistor Integrated gate-to-source Zener diode Low threshold Low on-resistance Low input capacitance Fast switching speeds


    Original     		PDF TC7320 TC7320 32-lead DSFP-TC7320 C122208

    DP627

    Abstract: C1222 logic pulser MS-026 lqfp 80 zener diode si 18 125OC MS-026 TC7320 TC7320FG TC7320FG-G
    Text: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320 consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source resistors and


    Original     		PDF TC7320 TC7320 32-lead DSFP-TC7320 C122208 DP627 C1222 logic pulser MS-026 lqfp 80 zener diode si 18 125OC MS-026 TC7320FG TC7320FG-G

    marking KN sc70

    Abstract: L2SK3018WT1G Diode marking CODE 5M DIODE MARKING code 05M
    Text: LESHAN RADIO COMPANY, LTD. Silicon N-channel MOSFET 100 mA, 30 V L2SK3018WT1G 3 • Features 1 Low on-resistance. 2) Fast switching speed. 3) Low voltage drive 2.5V) makes this device ideal for portable equipment. 4) Easily designed drive circuits. 5) Easy to parallel.


    Original     		PDF L2SK3018WT1G SC-70 marking KN sc70 L2SK3018WT1G Diode marking CODE 5M DIODE MARKING code 05M

    DP2 marking

    Abstract: No abstract text available
    Text: TC7320 Six Pair, N- and P-Channel Enhancement-Mode MOSFET Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC7320 consists of a six pairs of high voltage, low threshold, N- and P-channel MOSFETs in a 32-lead LQFP package. All of the MOSFETs have integrated gate-to-source


    Original     		PDF TC7320 32-lead DSFP-TC7320 C103008 DP2 marking

    Mosfet

    Abstract: SSF2637E
    Text: SSF2637E 20V P-Channel MOSFET DESCRIPTION The SSF2637E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as -0.5V. GENERAL FEATURES ● VDS = -20V,ID =-5.4A RDS(ON) < 52mΩ @ VGS=-2.5V RDS(ON) < 43mΩ @ VGS=-4.5V


    Original     		PDF SSF2637E SSF2637E 2637E Mosfet

    Mosfet

    Abstract: SSF3626
    Text: SSF3626 30V Dual N-Channel MOSFET DESCRIPTION The SSF3626 uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID =6.9A


    Original     		PDF SSF3626 SSF3626 330mm Mosfet

    Mosfet

    Abstract: SSF2814E
    Text: SSF2814E 20V Dual N-Channel MOSFET DESCRIPTION The SSF2814E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V


    Original     		PDF SSF2814E SSF2814E SSF2810% Mosfet

    Mosfet

    Abstract: SSF2429
    Text: SSF2429 20V P-Channel MOSFET DESCRIPTION D The SSF2429 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. G GENERAL FEATURES S ● VDS = -20V,ID =-5A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 48mΩ @ VGS=-2.5V


    Original     		PDF SSF2429 SSF2429 OT23-6 OT23-6 180mm Mosfet

    Si1040X

    Abstract: Si1040X-T1
    Text: Si1040X Vishay Siliconix Load Switch with Level-Shift FEATURES PRODUCT SUMMARY VDS2 V 1.8 to 8 rDS(on) (W) ID (A) 0.625 @ VIN = 4.5 V "0.43 0.890 @ VIN = 2.5 V "0.36 1.25 @ VIN = 1.8 V "0.3 D D D D D D TrenchFETr Power MOSFET Pb-free 1.8 to 8-V Input Available


    Original     		PDF Si1040X 000-V SC89-6 08-Apr-05 Si1040X-T1

    Mosfet

    Abstract: SSF2300B
    Text: SSF2300B 20V N-Channel MOSFET DESCRIPTION D The SSF2300B uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching


    Original     		PDF SSF2300B SSF2300B OT23-3 Mosfet

    Mosfet

    Abstract: SSF3605S
    Text: SSF3605S 30V P-Channel MOSFET D DESCRIPTION The SSF3605S uses advanced trench technology to provide excellent RDS ON and low gate charge .This device is suitable for use as a load switch or in PWM applications. G S Schematic Diagram GENERAL FEATURES ● VDS =-30V,ID =-15A


    Original     		PDF SSF3605S SSF3605S Mosfet

    Mosfet

    Abstract: SSF2641S
    Text: SSF2641S 20V P-Channel MOSFET D DESCRIPTION The SSF2641S uses advanced trench technology to provide excellent RDS ON , low gate charge. It has been optimized for power management applications requiring a wide range of gave drive voltage ratings. G S Schematic Diagram


    Original     		PDF SSF2641S SSF2641S Mosfet

    Mosfet

    Abstract: SSF32E0E
    Text: SSF32E0E 30V N-Channel MOSFET GENERAL FEATURES ● VDS =30V,ID = 0.1A RDS ON < 8Ω @ VGS=4V RDS(ON) < 13Ω @ VGS=2.5V ESD Rating：1000V HBM ● High Power and current handing capability ● Lead free product ● Surface Mount Package Schematic Diagram APPLICATIONS


    Original     		PDF SSF32E0E OT-523 OT-523 180mm 500TYP 400REF Mosfet SSF32E0E

    Mosfet

    Abstract: SSF2439E
    Text: SSF2439E 20V P-Channel MOSFET DESCRIPTION The SSF2439E uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = -20V,ID =-4.5A RDS(ON) < 180mΩ @ VGS=-2V RDS(ON) < 100mΩ @ VGS=-2.5V


    Original     		PDF SSF2439E SSF2439E OT23-6 2439E OT23-6 Mosfet

    Mosfet

    Abstract: SSF2816EBK
    Text: SSF2816EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2816EBK uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES ● VDS = 20V,ID = 7A RDS(ON) < 30mΩ @ VGS=2.5V


    Original     		PDF SSF2816EBK SSF2816EBK Mosfet

    Mosfet

    Abstract: SSF2312
    Text: SSF2312 20V N-Channel MOSFET D DESCRIPTION The SSF2312 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching


    Original     		PDF SSF2312 SSF2312 OT-23 950TYP 550REF Mosfet

    Mosfet

    Abstract: SSF2418EBK
    Text: SSF2418EBK 20V Dual N-Channel MOSFET DESCRIPTION The SSF2418EBK uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch. It is ESD protected.


    Original     		PDF SSF2418EBK SSF2418EBK OT23-6 Mosfet

    Mosfet

    Abstract: SSF2336
    Text: SSF2336 20V N-Channel MOSFET D DESCRIPTION The SSF2336 uses advanced trench technology to provide excellent R DS ON , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching


    Original     		PDF SSF2336 SSF2336 OT-23 950TYP 550REF Mosfet

    Mosfet

    Abstract: SSF3402
    Text: SSF3402 30V N-Channel MOSFET D DESCRIPTION The SSF3402 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate voltages as low as 2.5V. G S Schematic Diagram GENERAL FEATURES ● VDS = 30V,ID = 5A RDS(ON) < 30mΩ @ VGS=10V


    Original     		PDF SSF3402 SSF3402 OT-23 OT-23 180mm 950TYP 550REF Mosfet