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    MARKING T92 6 PIN TR Search Results

    MARKING T92 6 PIN TR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    MARKING T92 6 PIN TR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    13003ad

    Abstract: 13003ADA
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION „ DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-F-K 13003ADAL-T92-F-B 13003ADAL-T9at QW-R223-016 13003ad

    13003AD

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-F-at QW-R223-016 13003AD

    ic 741 free

    Abstract: T92 marking 2SA1977 NE68133 NE97733 S21E 682 MARKING SOT-23 sot-23 24
    Text: PNP SILICON HIGH FREQUENCY TRANSISTOR NE97733 FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8.5 GHz TYP • HIGH SPEED SWITCHING CHARACTERISTICS • NPN COMPLIMENT AVAILABLE: NE68133 • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB at 1 GHz 33 SOT 23 STYLE


    Original     		PDF NE97733 NE68133 NE97733 2SA1977 24-Hour ic 741 free T92 marking 2SA1977 NE68133 S21E 682 MARKING SOT-23 sot-23 24

    13003ADA

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADA Preliminary NPN SILICON TRANSISTOR NPN SILICON BIPOLAR TRANSISTORS FOR LOW FREQUENCY AMPLIFICATION  DESCRIPTION The UTC 13003ADA is a silicon NPN power switching transistor; it uses UTC’s advanced technology to provide customers high


    Original     		PDF 13003ADA 13003ADA 13003ADAL-TM3-T 13003ADAL-T60-K QW-R223-016

    13003CD

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003CDH Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF 13003CDH 290ns 13003CDHL-TM3-T 13003CDHGat QW-R223-022 13003CD

    T92 DIODE

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13003ADG Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTOR „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V applications in switch


    Original     		PDF 13003ADG 290ns 13003ADGL-TM3-T 13003ADGPat QW-R223-023 T92 DIODE

    617-70

    Abstract: 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247
    Text: DATA SHEET PRELIMINARY DATA SHEET Silicon Transistor 2SA1977 PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER FEATURES _0.2 2.8+ High fT 0.4 +0.1 –0.05 • PACKAGE DIMENSION in millimeters fT = 8.5 GHz TYP. • High gain 0.65 +0.1 –0.15 1.5 | S21e | = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA


    Original     		PDF 2SA1977 617-70 2SA1977 2SC3583 MARKING T92 nec 561 LI-01/transistor k 0247

    transistor C 548 B

    Abstract: TRANSISTOR c 547 B transistor bc547 specifications
    Text: UNISONIC TECHNOLOGIES CO., LTD BC546/547/548 NPN EPITAXIAL SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS  FEATURES * High Voltage: UTC BC546, VCEO=65V UTC BC547, VCEO=45V UTC BC548, VCEO=30V 1 TO-92  ORDERING INFORMATION Order Number Lead Free


    Original     		PDF BC546/547/548 BC546, BC547, BC548, BC546L-x-T92-B BC546G-x-T92-B BC546L-x-T92-K BC546G-x-T92-K BC547L-x-T92-B BC547G-x-T92-B transistor C 548 B TRANSISTOR c 547 B transistor bc547 specifications

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF 13005BA QW-R201-089

    NTJS3157NT1G

    Abstract: marking T92 SOT363 t92 surface mount t92 transistor NTJS3157N NTJS3157NT1 NTJS3157NT2 NTJS3157NT2G NTJS3157NT4 NTJS3157NT4G A-7085
    Text: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board


    Original     		PDF NTJS3157N SC-88 SC-88 SC-70-6 OT-363) NTJS3157N/D NTJS3157NT1G marking T92 SOT363 t92 surface mount t92 transistor NTJS3157N NTJS3157NT1 NTJS3157NT2 NTJS3157NT2G NTJS3157NT4 NTJS3157NT4G A-7085

    Untitled

    Abstract: No abstract text available
    Text: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board


    Original     		PDF NTJS3157N NTJS3157N/D

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 13005BA Preliminary NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		PDF 13005BA QW-R201-089

    marking T92 SOT363

    Abstract: Marking code t92
    Text: NTJS3157N Trench Power MOSFET 20 V, 4.0 A, Single N−Channel, SC−88 Features • Leading Trench Technology for Low RDS ON Extending Battery Life • Fast Switching for Increased Circuit Efficiency • SC−88 Small Outline (2 x 2 mm) for Maximum Circuit Board


    Original     		PDF NTJS3157N SC-88 SC-88 SC-70-6 OT-363) NTJS3157N/D marking T92 SOT363 Marking code t92

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 2SD669/A NPN SILICON TRANSISTOR BIPOLAR POWER GENERAL PURPOSE TRANSISTOR  APPLICATIONS * Low frequency power amplifier complementary pair with UTC 2SB649/A  ORDERING INFORMATION Ordering Number Lead Free Halogen Free 2SD669xG-x-AA3-R


    Original     		PDF 2SD669/A 2SB649/A 2SD669xG-x-AA3-R 2SD669xG-x-AB3-R 2SD669xG-x-AE3-R 2SD669xG-x-AE3-6-R 2SD669xL-x-T60-K 2SD669xG-x-T60-K 2SD669xL-x-T6C-K 2SD669xG-x-T6C-K

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 5302D NPN SILICON TRANSISTOR HIGH VOLTAGE NPN TRANSISTOR WITH DIODE  DESCRIPTION The UTC 5302D are series of NPN silicon planar transistor with diode and its suited to be used in power amplifier applications.  FEATURES


    Original     		PDF 5302D 5302D OT-223 5302DG-AA3-R 5302DL-T60-K 5302DG-T60-K O-126 5302DL-T92-B 5302DG-T92-B 5302DL-T92-K

    triac 600v. 1a. to 92

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UZ0103 Preliminary TRIAC 1A TRIAC  DESCRIPTION 1 The UTC UZ0103 is a 1A triac, it is suitable for general purpose AC switching applications, fan speed controllers and home appliances.  FEATURES 1 * IGT≤3mA I-II-III , IGT≤5mA (IV)


    Original     		PDF UZ0103 UZ0103 OT-223 UZ0103G-x-AA3-R UZ0103L-x-T92-B UZ0103G-x-T92-B UZ0103L-x-T92-K UZ0103G-x-T92-K triac 600v. 1a. to 92

    2w sot-23

    Abstract: he8050 HE8550 small signal transistor HE8550L
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8550 OT-89 OT-23 HE8550 HE8050 O-92NL HE8550L HE8550-x-AB3-R HE8550L-x-AB3-R HE8550-x-AE3-R 2w sot-23 he8050 small signal transistor HE8550L

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8550 PNP SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8550 is a low voltage high current small signal PNP transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8550 OT-89 OT-23 HE8550 HE8050 O-92NL HE8550L HE8550-x-AB3-R HE8550L-x-AB3-R HE8550-x-AE3-R

    HE8050

    Abstract: HE8050L HE8050L-x-AE3-R HE8050-x-AB3-R
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 HE8050 OT-89 OT-23 HE8550 O-92NL HE8050L HE8050-x-AB3-R HE8050L-x-AB3-R HE8050-x-AE3-R HE8050L HE8050L-x-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: GM2950/GM2951 100mA, LOW DROPOUT VOLTAGE REGULATORS Description Features The GM2950 and GM2951 is a low power voltage regulator. This device is an excellent choice for use in battery powered application such as cordless telephone, radio control systems, and portable


    Original     		PDF GM2950/GM2951 100mA, GM2950 GM2951 100mA GM2950/GM2951 J-STD-020. 900ppm 1500ppm

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR 3 1 2 SOT-89 1 SOT-23 DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for


    Original     		PDF HE8050 OT-89 OT-23 HE8050 HE8550 O-92NL HE8050L HE8050-x-AB3-R HE8050L-x-AB3-R HE8050-x-AE3-R

    Untitled

    Abstract: No abstract text available
    Text: 3-TERMINAL 100mA ADJUSTABLE REGULATOR Description Features The GM317L is an adjustable 3-terminal positive voltage regulator capable of supplying 100mA over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally easy to use and requires only two external resistors to


    Original     		PDF 100mA GM317L J-STD-020. 900ppm 1500ppm GM317LV2

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD UT131 TRIAC TRIAC LOGIC LEVEL DESCRIPTION  1 Passivated, sensitive gate triac in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to


    Original     		PDF UT131 OT-223 UT131G-x-AA3-R UT131L-x-T92-B UT131G -x-T92-B UT131L-x-T92-K -x-T92-K

    Marking code t92

    Abstract: TRANSISTOR B S MGD624
    Text: Philips Semiconductors Product specification PNP switching transistor FEATURES BSR18A PINNING • Low current max. 100 mA PIN • Low voltage (max. 40 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • High-speed saturated switching. DESCRIPTION


    OCR Scan     		PDF BSR18A BSR17A. BSR18A MGD624 Marking code t92 TRANSISTOR B S MGD624