1N4148WS
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODES SOD-323 + FEATURES - MARKING: T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit
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OD-323
BAV16WS/1N4148WS
OD-323
150mA
1N4148WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS SOD-323 FAST SWITCHING DIODES + FEATURES + - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits
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PDF
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OD-323
BAV16WS/1N4148WS
OD-323
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit
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OD-323
BAV16WS/1N4148WS
OD-323
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DIODE T4 marking
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS SOD-323 FAST SWITCHING DIODES + FEATURES - MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits
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Original
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PDF
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OD-323
BAV16WS/1N4148WS
OD-323
150mA
DIODE T4 marking
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DIODE T4 marking
Abstract: 1n4148ws 1N4148WS SOD323 T4 T4 SOD-323
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODES SOD-323 FEATURES MARKING: T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM
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PDF
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OD-323
BAV16WS/1N4148WS
OD-323
150mA
DIODE T4 marking
1n4148ws
1N4148WS SOD323 T4
T4 SOD-323
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DIODE T4 marking
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM
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PDF
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OD-123
BAV16W/1N4148W
OD-123
150mA
DIODE T4 marking
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 FEATURES MARKING: T6, T4 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol Limit Unit
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PDF
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OD-323
BAV16WS/1N4148WS
OD-323
1N4148WS
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Untitled
Abstract: No abstract text available
Text: MIXD80PM650TMI IGBT Modules Multi Level IC80 T1/T4 = 82 A IC80 (T2/T3) = 110 A VCES = 650 V VCE(sat) typ. = 1.5 V XPT IGBT Technology Part name (Marking on product) MIXD80PM650TMI + Th1 D1 G1 Th2 T1 E1 e NTC D5 D2 T2 iv G2 N E2 G3 U D3 T3 E3 t D6 G4 D4 T4
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MIXD80PM650TMI
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Untitled
Abstract: No abstract text available
Text: SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES z Fast Switching Speed z Surface Mount Package Ideally Suited for Automatic Insertion z For General Purpose Switching Applications z High Conductance + - MARKING: T6,T4
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OD-123
BAV16W/1N4148W
OD-123
150mA
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1n4148ws
Abstract: No abstract text available
Text: SOD-323 Plastic-Encapsulate Diode BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 Features 1.00 1.70 Marking: T4 0.30 • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance
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OD-323
BAV16WS/1N4148WS
OD-323
019REF
475REF
1n4148ws
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Untitled
Abstract: No abstract text available
Text: 300mAmps Surface Mount Fast Switching Diode Mechanical Dimension BAV16WS Description SOD-323 MARKING: T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit 100 V 75 V VR RMS 53 V Forward Continuous Current
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300mAmps
BAV16WS
OD-323
150mA
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T4 SOD-123
Abstract: diode marking T4 sod123 DIODE T4 marking sod 123 t4 marking A2 SOD-123
Text: SOD-123 Plastic-Encapsulate Diode BAV16W/1N4148W FAST SWITCHING DIODE SOD-123 Features • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications High Conductance 1.05 · · 2.70 1.6 Marking: T6,T4
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OD-123
BAV16W/1N4148W
OD-123
020REF
500REF
T4 SOD-123
diode marking T4 sod123
DIODE T4 marking
sod 123 t4 marking
A2 SOD-123
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1N4148WS
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diode BAV16WS/1N4148WS FAST SWITCHING DIODE SOD-323 Features 1.00 1.70 Marking: T4 0.30 • · Fast Switching Speed Surface Mount Package Ideally Suited for Automatic Insertion For General Purpose Switching Applications
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Original
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PDF
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OD-323
BAV16WS/1N4148WS
OD-323
019REF
475REF
1N4148WS
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DIODE T4 marking
Abstract: T4 SOD-123 marking SOD-123 MS SOD-123 1N4148w DIODE T4 T4 DIODE IR225
Text: Formosa MS SOD-123 Plastic-Encapsulate Diodes BAV16W/1N4148W FAST SWITCHING DIODES SOD-123 FEATURES MARKING: T6,T4 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol Limits Unit VRM 100 V 75 V VR RMS 53 V Forward Continuous Current
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OD-123
BAV16W/1N4148W
OD-123
150mA
DIODE T4 marking
T4 SOD-123
marking SOD-123
MS SOD-123
1N4148w
DIODE T4
T4 DIODE
IR225
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G4EU
Abstract: E72873 MIXA20W1200TMH
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Preliminary data Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV
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MIXA20W1200TMH
20091127a
G4EU
E72873
MIXA20W1200TMH
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Untitled
Abstract: No abstract text available
Text: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 D1 1 T1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: + • SPT IGBT technology • low saturation voltage
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101H1200EH
MIEB101H1200EH
E72873
S1600
20110615a
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Untitled
Abstract: No abstract text available
Text: MIEB 101H1200EH IGBT Module H Bridge VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101H1200EH 13, 21 1 T1 D1 D2 9 T2 10 2 19 E72873 15 D3 3 T3 D4 11 T4 12 4 14, 20 Features: Application: Package: • SPT IGBT technology • low saturation voltage
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101H1200EH
MIEB101H1200EH
E72873
20110615a
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Untitled
Abstract: No abstract text available
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin coniguration see outlines. G2 G4 EU G6 EV EW Features: Application:
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MIXA20W1200TMH
20091127a
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G4EU
Abstract: ic MARKING QG E72873 DIODE T6 marking
Text: MIXA20W1200TMH Six-Pack XPT IGBT VCES = 1200 V IC25 = 28 A VCE sat = 1.8 V Part name (Marking on product) MIXA20W1200TMH P T1 T3 T5 D1 D5 D3 G1 G3 G5 NTC1 U V T2 NTC2 W T4 T6 D2 E 72873 D6 D4 Pin configuration see outlines. G2 G4 EU G6 EV EW Features: Application:
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MIXA20W1200TMH
20091127a
G4EU
ic MARKING QG
E72873
DIODE T6 marking
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D6 TRANSISTOR MARKING
Abstract: No abstract text available
Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 D1 1 T1 D2 5 2 T2 D3 9 T3 10 6 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: + • SPT IGBT technology • low saturation voltage
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101W1200EH
MIEB101W1200EH
E72873
20110511a
D6 TRANSISTOR MARKING
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MIEB101W1200EH
Abstract: 101W1200EH
Text: MIEB 101W1200EH Six-Pack SPT+ IGBT VCES = 1200 V IC25 = 183 A VCE sat = 1.8 V Part name (Marking on product) MIEB101W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • SPT IGBT technology
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101W1200EH
MIEB101W1200EH
E72873
20110511a
MIEB101W1200EH
101W1200EH
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MIXA151W1200EH
Abstract: D6 TRANSISTOR MARKING IC marking code D3 D434
Text: MIXA 151W1200EH Six-Pack XPT IGBT VCES = 1200 V IC25 = 220 A VCE sat = 1.8 V Part name (Marking on product) MIXA151W1200EH 13, 21 1 T1 D1 5 2 T2 D2 9 6 T3 D3 10 19 17 15 D4 3 T4 4 D5 7 T5 8 E72873 D6 11 T6 12 14, 20 Features: Application: Package: • Easy paralleling due to the positive
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151W1200EH
MIXA151W1200EH
E72873
20110719a
MIXA151W1200EH
D6 TRANSISTOR MARKING
IC marking code D3
D434
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marking K7 DIODE
Abstract: 15X15 SC017 SC017-2 SC017-4
Text: SC017 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iS ftd fE O H General purpose rectifier applications
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PDF
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SC017-2
SC017-4
15X15Â
marking K7 DIODE
15X15
SC017
SC017-4
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Untitled
Abstract: No abstract text available
Text: S C 1 7 i .OA : Outline Drawings k _ GENERAL USE RECTIFIER DIODE : Features ESD-Proof • * B S 8* A f » m Surface m ount device •K « « t4 i/jv : Marking High reliability • Applications • V iSftd fE O H General purpose rectifier applications
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PDF
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19S24
I95t/R89)
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