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    MARKING T01 SOT Search Results

    MARKING T01 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING T01 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ  RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ  Advanced Trench Process Technology


    Original     		PDF PPJT7801 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV

    Untitled

    Abstract: No abstract text available
    Text: PPJT7801 20V P-Channel Enhancement Mode MOSFET – ESD Protected Voltage -20 V SOT-363 -0.7A Current Unit: inch mm Features  RDS(ON) , VGS@-4.5V, ID@-0.7A<325mΩ  RDS(ON) , VGS@-2.5V, ID@-0.6A<420mΩ  RDS(ON) , VGS@-1.8V, ID@-0.5A<600mΩ  Advanced Trench Process Technology


    Original     		PDF PPJT7801 OT-363 2011/65/EU IEC61249 OT-363 MIL-STD-750, 2013-REV

    Electrovalve

    Abstract: T0103-XXXN c044a T0105-XXXA AC sot-223 IBGT T10SN 2t sot marking t01
    Text: T01 1A TRIACs Series 3-Quardrant Triacs Main features Symbol Value Unit IT RMS 1 A VDRM/VRRM 600 and 700 V I GT(Q1) 3 to 25 mA B B B B B DESCRIPTION The T01 series is suitable for general purpose AC switching applications such as home appliances(electrovalve, pump, door lock, small lamp control),fan speed


    Original     		PDF T01xx-xxxA T01xx-xxxN OT-223 T0-92 T0105-XXXA T0105-XXXN Electrovalve T0103-XXXN c044a T0105-XXXA AC sot-223 IBGT T10SN 2t sot marking t01

    L74VHC1GT01

    Abstract: sc59 Marking T01 marking code 10 sot23 sot23-5 transistor T1 A114 A115 C101 JESD22
    Text: LESHAN RADIO COMPANY, LTD. 2–Input NAND Gate with Open Drain Output with LSTTL–Compatible Inputs L74VHC1GT01 The L74VHC1GT01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed peration similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.


    Original     		PDF L74VHC1GT01 L74VHC1GT01 sc59 Marking T01 marking code 10 sot23 sot23-5 transistor T1 A114 A115 C101 JESD22

    Untitled

    Abstract: No abstract text available
    Text: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2301 Pin Description -20V/-3A , RDS ON =72mΩ(typ.) @ VGS=-4.5V RDS(ON)=98mΩ(typ.) @ VGS=-2.5V z Super High Dense Cell Design z Reliable and Rugged z Lead Free Available (RoHS Compliant) Top View of SOT23-3L


    Original     		PDF TDM2301 -20V/-3A OT23-3L TDM2301â TDM2301

    Untitled

    Abstract: No abstract text available
    Text: Datasheet P-Channel Enhancement Mode MOSFET Features z TDM2305 Pin Description -20V/-3.5A , RDS ON =60mΩ(typ.) @ VGS =-4.5V RDS(ON) =70mΩ(typ.) @ VGS =-2.5V R =83mΩ(typ.) @ V DS(ON) z GS =-1.8V Super High Dense Cell Design Top View of SOT23-3L z Reliable and Rugged


    Original     		PDF TDM2305 -20V/-3 OT23-3L TDM2305â

    A194FH

    Abstract: AOZ8000CI 84-3j mp8000ch4 A194-FH 2P3M a194 IEC-61000-4-2 SS MARKING sot23 MP-8000CH4
    Text: AOS Semiconductor Product Reliability Report AOZ8000CI, rev 2 Plastic Encapsulated Device ALPHA & OMEGA Semiconductor, Inc 495 Mercury Drive Sunnyvale, CA 94085 U.S. Tel: 408 830-9742 www.aosmd.com Mar 27, 2007 1 This AOS product reliability report summarizes the qualification result for AOZ8000CI.


    Original     		PDF AOZ8000CI, AOZ8000CI. AOZ8000CI 617x10-5 -105D A194FH 84-3j mp8000ch4 A194-FH 2P3M a194 IEC-61000-4-2 SS MARKING sot23 MP-8000CH4

    nitto SWT 10

    Abstract: nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04
    Text: PRODUCT CODING SYSTEM QSP0005_WEB.028 1 2.4.2007 Page 1 of 6 GENERAL AND DEFINITIONS This procedure defines the identification system for MAS products. The following abbreviations are used in this document. ESD EWS ID MAS MBB T&R 2 Electrostatic Sensitive Device


    Original     		PDF QSP0005 MAS1234AB3 MAS1234AB3xxxxx) 98AA2 MAS9198AA2xxxxx) nitto SWT 10 nitto SWT-20 W07 sot 23 w04 transistor sot 23 UE-111AJ W04 sot 23 transistor w07 transistor marking w08 marking W07 transistor marking w04

    Untitled

    Abstract: No abstract text available
    Text: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN * “G” Lead Pb -Free DRAIN CURRENT - 3 AMPERS 1 Features: DRAIN SOUCE VOLTAGE - 30 VOLTAGE GATE *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V


    Original     		PDF WT-3401 OT-23 OT-23

    WT3401

    Abstract: WT-3401
    Text: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT - 3 AMPERES 1 Features: DRAIN SOURCE VOLTAGE GATE *Super high dense cell design for low RDS ON R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V *Rugged and Reliable


    Original     		PDF WT-3401 OT-23 OT-23 WT3401 WT-3401

    Untitled

    Abstract: No abstract text available
    Text: WT-3401 Surface Mount P-Channel Enhancement Mode MOSFET 3 DRAIN DRAIN CURRENT * “G” Lead Pb -Free - 3 AMPERES DRAIN SOURCE VOLTAGE 1 Features: GATE *Super high dense cell design for low RDS(ON) R DS(ON) <75 mΩ @VGS =-10V R DS(ON) <100 m Ω@V GS =-4.5V


    Original     		PDF WT-3401 OT-23 OT-23

    MB90F562L

    Abstract: DIP64 package S12MD2 MB213 QFP 64 Package MB90560 DIP64 QPF64
    Text: Flash-64P-M01/M09 Flash-64P-M01/M09 Evaluation Board Documentation  Fujitsu Mikroelektronik GmbH Rev. 1.1 Page 1 Flash-64P-M01/M09 History Revision V1.0 V1.1 Date 10.05.99 09.07.99 Comment New Document History Table added on page 2, addendum 1 included in chapter 1.4.2


    Original     		PDF Flash-64P-M01/M09 Flash-64P-M01/M09 Flash-64PM01/M09 MB90F562L DIP64 package S12MD2 MB213 QFP 64 Package MB90560 DIP64 QPF64

    TMP100

    Abstract: TMP101 SOT23-6 Marking TM H4 MARKING CODE SOT23-6 marking l5 SOT23-6 marking CODE D3 SOT23-6 sbos231b 1001011
    Text: TMP100 TMP101 SBOS231B – JANUARY 2002 – REVISED MAY 2002 Digital Temperature Sensor with I2C Interface FEATURES DESCRIPTION ● DIGITAL OUTPUT: I2C Serial 2-Wire ● RESOLUTION: 9- to 12-Bits, User-Selectable ● ACCURACY: ±2.0°C from –25°C to +85°C max


    Original     		PDF TMP100 TMP101 SBOS231B 12-Bits, OT23-6 TMP100 TMP101 SOT23-6 Marking TM H4 MARKING CODE SOT23-6 marking l5 SOT23-6 marking CODE D3 SOT23-6 sbos231b 1001011

    sot23 MARKING CODE L6

    Abstract: marking code D3 SOT23-6
    Text: TMP100 TMP101 SBOS231A – APRIL 2002 Digital Temperature Sensor with I2C Interface FEATURES DESCRIPTION ● DIGITAL OUTPUT: I2C Serial 2-Wire ● RESOLUTION: 9- to 12-Bits, User-Selectable ● ACCURACY: ±2.0°C from –25°C to +85°C max ±3.0°C from –55°C to +125°C (max)


    Original     		PDF TMP100 TMP101 SBOS231A 12-Bits, OT23-6 TMP101 sot23 MARKING CODE L6 marking code D3 SOT23-6

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


    Original     		PDF 1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


    Original     		PDF 1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE

    f585

    Abstract: bfn21 62702-F585 transistor sl 431
    Text: PNP Silicon High-Voltage Transistor • • • • • BFN 21 Suitable for video output stages in TV sets and switching power supplies High breakdown voltage Low collector-em itter saturation voltage Low capacitance Complementary type: BFN 20 NPN Type Marking


    OCR Scan     		PDF 62702-F585 62702-F1059 f585 bfn21 62702-F585 transistor sl 431

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors 3 31 0023545 075 bbS T Silicon n-channei dual gate MOS-FETs FE A T U R E S APX Product specification N ANER PHILIPS/DISCRETE L7E D BF901; BF901R Q U IC K R E F E R E N C E DATA • Intended for low voltage operation • Short channel transistor with high


    OCR Scan     		PDF BF901; BF901R BF901R OT143 OT143R

    LT 450 mbr

    Abstract: No abstract text available
    Text: SIEMENS NPN Silicon AF Transistor BC 846 W . BC 850 W Features • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Low noise between 30Hz and 15 kHz • Complementary types: BC 856 W, BC 857 W,


    OCR Scan     		PDF Q62702-C2319 Q62702-C2279 Q62702-C2304 Q62702-C2305 Q62702-C2306 Q62702-C2307 Q62702-C2308 Q62702 LT 450 mbr

    D78P058F

    Abstract: No abstract text available
    Text: DATA SHEET NEC M O S INTEGRATED CIRCUI 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The |iP D 7 8 P 0 5 8 F is an Electro Magnetic Interface EM I noise reduction version in comparison with the usual jiP D 7 8 P 0 5 8 . The mP D 78P 05 8 F is a member of the /xPD78058F subseries of 78K/0 se rie s products, in which the on-chip m ask


    OCR Scan     		PDF uPD78058F 78K/0 PD78058F, 78058FY Subseries200 IR35-207-3 VP15-207-3 WS60-207-1 D78P058F

    Transistor TT 2246

    Abstract: No abstract text available
    Text: W hp% m LUM H E W L E TT PA CKA RD 1 .5 -1 8 GHz Surface Mount Pseudomorphic HEMT Technical Data ATF-36163 Features Surface Mount Package • Low M inim um N oise Figure: I dB Typical at 12 GHz 0.6 dB Typical at 4 GHz • A sso ciated Gain: 9.4 dB Typical at 12 GHz


    OCR Scan     		PDF ATF-36163 OT-363 5964-4069E 5965-4747E Transistor TT 2246

    271 Ceramic Disc Capacitors

    Abstract: 1501 Dc to Dc converter LM7131 marking MOSA 470 pf ceramic capacitor 100w audio amplifier schematic A02B GI MARKING GI sot23-3 5pin marking VJ LM7131ACM
    Text: LM7131 National Semiconductor LM7131 Tiny High Speed Single Supply Operational Amplifier General Description Features The LM7131 is a high speed bipolar operational amplifier available in a tiny SOT23-5 package. This makes the LM7131 ideal for space and weight critical designs. Single


    OCR Scan     		PDF LM7131 LM7131 OT23-5 TL/H/12313-25 bSD1124 OT-23-5 TL/H/12313-26 b501124 271 Ceramic Disc Capacitors 1501 Dc to Dc converter marking MOSA 470 pf ceramic capacitor 100w audio amplifier schematic A02B GI MARKING GI sot23-3 5pin marking VJ LM7131ACM

    IC1232

    Abstract: c4742 c1813 C4722 MC2212 C1B25 C2792 C-829 capacitor c829 capacitor 1C9
    Text: KEMET CERAMIC CHIP/STANDARD FEATURES • • • • • Twelve chip sizes COG NPO , X7R, Z5U and Y5V Dielectrics 10, 16, 25, 50, 100 and 200 Volts Standard End Metalization-tin-plated nickel barrier Available Capacitance Tolerance: ±0.10 pF; ±0.25 pF; ±0.5 pF; ±1 %; ±2%; ±3%; ±5%; ±10%;


    OCR Scan     		PDF EIA481 IEC286-6 008tape IL-C-55681 IC1232 c4742 c1813 C4722 MC2212 C1B25 C2792 C-829 capacitor c829 capacitor 1C9