Untitled
Abstract: No abstract text available
Text: Aluminum Electrolytic Capacitors SSN Features ‧ 85℃, 1,000 hours assured, bi-polarized series with 5mm height ‧ Suitable for use in circuits wihich has a reversed or unknown polarity ‧ RoHS Compliance Sleeve & Marking Color: Yellow & Black SECIFICATIONS
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120Hz,
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SSN2N7002A
Abstract: No abstract text available
Text: SSN2N7002A N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-323 RDS(ON) ( ) Max D 3 @VGS = 10V G 4 @VGS = 5V S D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-323 package. Marking Code S 2A
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SSN2N7002A
OT-323
OT-323
SSN2N7002A
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SSN SOT-23
Abstract: sot-23 ssn L6327 SN7002N PG-SOT-23
Text: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking
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SN7002N
PG-SOT-23
L6327:
L6433:
SSN SOT-23
sot-23 ssn
L6327
SN7002N
PG-SOT-23
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Untitled
Abstract: No abstract text available
Text: SN7002N SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.2 A PG-SOT-23 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Tape and Reel Information Marking
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SN7002N
PG-SOT-23
SN7002N
PG-SOT-23
L6327:
L6433:
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MARKING QG 6 PIN
Abstract: L6327 SN7002W
Text: SN7002W SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.23 A PG-SOT-323 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Yes Tape and Reel Information Marking
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SN7002W
PG-SOT-323
L6327:
L6433:
MARKING QG 6 PIN
L6327
SN7002W
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Untitled
Abstract: No abstract text available
Text: SN7002W SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.23 A PG-SOT-323 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Yes Tape and Reel Information Marking
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SN7002W
PG-SOT-323
L6327:
L6433:
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SIPMOS Small-Signal-Transistor
Abstract: IS-023A SN7002W PG-SOT323 JESD22-A114-HBM PG-SOT-323 L6327 Marking 023A SN7002W L6433 SIPMOS N-channel Small-Signal-Transistor
Text: SN7002W SIPMOS Small-Signal-Transistor Feature Product Summary • N-Channel VDS • Enhancement mode RDS on • Logic Level ID • dv/dt rated 60 V 5 Ω 0.23 A PG-SOT-323 Drain pin 3 Gate pin1 Source pin 2 Type Pb-free Yes Tape and Reel Information Marking
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SN7002W
PG-SOT-323
L6327:
L6433:
SIPMOS Small-Signal-Transistor
IS-023A
SN7002W
PG-SOT323
JESD22-A114-HBM
PG-SOT-323
L6327
Marking 023A
SN7002W L6433
SIPMOS N-channel Small-Signal-Transistor
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51R0
Abstract: MIL-R-83401 MO-137 MS-001 MS-013 SQS24
Text: MODELS SQSxxA1, SQSxxB, SSNxxA, SSNxxB, SSWxxA, SSWxxB, SPDxxA, SPDxxB Isolated and bussed circuits Thin film resistor network RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon Passivation coating provides protection in humid environments
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SQS16
SQS20
SQS24
SSN08
SSN14
SSN16
SSW16
SSW20
SPD08
SPD14
51R0
MIL-R-83401
MO-137
MS-001
MS-013
SQS24
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Untitled
Abstract: No abstract text available
Text: MODELS SQSxx SQSxxA xxA1, SQSxx SQSxxB, xxB, SSNxx SSNxxA, xxA, SSNxx SSNxxB, xxB, SSWxx SSWxxA, xxA, SSWxx SSWxxB, xxB, SPDxx SPDxxA, xxA, SPDxx SPDxxB xxB Isolated and bussed circuits Thin film resistor network RoHS compliant available FEATURES Precision Nichrome Resistors on Silicon
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MIL-STD-202,
SQS16
SQS20
SQS24
SSN08
SSN14
SSN16
SSW16
SSW20
SPD08
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Untitled
Abstract: No abstract text available
Text: Nichrome Resistor Networks on Silicon Substrates S Series: SQSxxA1, SQSxxB, SSNxxA, SSNxxB, SSWxxA, SSWxxB, SPDxxA, SPDxxB Isolated and bussed circuits Thin film resistor network RoHS compliant Not Recommended for New Designs For alternative see SQS - ,
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SQS16
SQS20
SQS24
SSN08
SSN14
SSN16
SSW16
SSW20
SPD08
SPD14
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SSNX
Abstract: No abstract text available
Text: Nichrome Resistor Networks on Silicon Substrates S Series: SQSxxA1, SQSxxB, SSNxxA, SSNxxB, SSWxxA, SSWxxB, SPDxxA, SPDxxB Isolated and bussed circuits Thin film resistor network RoHS compliant Features Precision Nichrome Resistors on Silicon Passivation coating provides protection in humid environments
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Original
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MIL-STD-202,
SQS16
SQS20
SQS24
SSN08
SSN14
SSN16
SSW16
SSW20
SPD08
SSNX
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SSN3906
Abstract: marking KA marking pc sot-23 transistor SSN3904 marking 02 npn "Small Signal Amplifier"
Text: SSN3904 TECHNICAL DATA NPN Silicon Transistor 1. Descriptions ・General small signal amplifier ・Switching application 2. Features •Low collector saturation voltage VCE sat = Max. 0.4V ·Low output capacitance Cob= Typ. 4pF ·Complementary to the SSN3906
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SSN3904
SSN3906
OT-23
OT-23
SSN3906
marking KA
marking pc sot-23 transistor
SSN3904
marking 02 npn
"Small Signal Amplifier"
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Untitled
Abstract: No abstract text available
Text: 1/24/2011 No content banned per EU RoHS. Average mass of SSN08LF thin film network is 0.08 grams each. Prepared by Eric Arnold 714 447-2565 Weights above 1 milligram rounded to the nearest mg. Values less than 1 milligram given in scientific notation. SSN08LF BOM-style material declaration. BI Technologies Corporation
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SSN08LF
compoun7631-86-9
divinylsiloxane124221-30-3
15E-07
25E-06
88E-06
56E-06
42E-05
30E-04
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Untitled
Abstract: No abstract text available
Text: 1/24/2011 No content banned per EU RoHS. Average mass of SSN16LF thin film network is 0.15 grams each. Prepared by Eric Arnold 714 447-2565 Weights above 1 milligram rounded to the nearest mg. Values less than 1 milligram given in scientific notation. SSN16LF BOM-style material declaration. BI Technologies Corporation
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SSN16LF
divinylsiloxane124221-30-3
30E-07
45E-05
38E-05
71E-05
84E-05
73E-04
34E-04
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Untitled
Abstract: No abstract text available
Text: SSN3134K 0.75 A, 20 V, RDS ON 380 mΩ Ω N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-723 Low on-resistance Fast switching speed Drive circuits can be simple
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SSN3134K
OT-723
800TYP.
12-Nov-2013
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Untitled
Abstract: No abstract text available
Text: Nichrome Resistor Networks on Silicon Substrates Models SQSxxL, SSNxxL, SSWxxL. Ladder Circuit Thin Film Resistor Networks RoHS Complaint Jedec 95 Industry standard packaging Schematics R/2R Ladder Network 16 Pin 20 Pin 16 9 R R R R R 1 R 20 11 R R 8 R R R
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MIL-STD-202,
-25dB
100Vdc
Mil-R-83401)
100ppm/Â
50ppm/Â
25ppm/Â
25K/50K
10K/20K
50K/100K
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Untitled
Abstract: No abstract text available
Text: Nichrome Resistor Networks on Silicon Substrates Models SQSxxL, SSNxxL, SSWxxL. Ladder Circuit Thin Film Resistor Networks RoHS Complaint Jedec 95 Industry standard packaging Not Recommended for New Designs Schematics R/2R Ladder Network 16 Pin 16 R R R R
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MIL-STD-202,
-25dB
100Vdc
Mil-R-83401)
100ppm/Â
50ppm/Â
25ppm/Â
25K/50K
10K/20K
50K/100K
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Untitled
Abstract: No abstract text available
Text: Nichrome Resistor Networks on Silicon Substrates Models SQSxxL, SSNxxL, SSWxxL. Ladder Circuit Thin Film Resistor Networks RoHS Complaint Jedec 95 Industry standard packaging Schematics R/2R Ladder Network 16 Pin 16 R R R R 9 R 1 R 20 Pin 20 R R 8 R R R 1
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MIL-STD-202,
-25dB
100Vdc
Mil-R-83401)
100ppm/
50ppm/
25ppm/
25K/50K
10K/20K
50K/100K
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1N45B
Abstract: SSN1N45BTA SSN1N45B
Text: SSN1N45B SSN1N45B 450V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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SSN1N45B
SSN1N45B
SSN1N45BBU
SSN1N45BTA
1N45B
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1N45B
Abstract: No abstract text available
Text: SSN1N45B N-Channel B-FET 450 V, 0.5 A, 4.25 Ω Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
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SSN1N45B
1N45B
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SSN3043
Abstract: MosFET
Text: SSN3043 255mA , 20V , RDS ON 3.4Ω N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free DESCRIPTION SOT-723 These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for
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SSN3043
255mA
OT-723
800TYP.
28-Oct-2013
SSN3043
MosFET
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NTC 1K lm 102
Abstract: No abstract text available
Text: A COMPANY OF MODEL SSN “SOFT-START” NTC Therm istors Prelim inary For Inrush C u rre n t Suppressing D evices 1.5 A to 2 5 A a t 6 5 C FEATURES • Switching power supply applications • Special marking is available upon request • Protective silicone coating is standard and has a nominal thickness of
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OCR Scan
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Untitled
Abstract: No abstract text available
Text: A C O M PAN Y O F M O DEL SSN “S O F T -S T A R T ” N TC T h e rm is to rs P re lim in a ry For Inrush Current Suppressing Devices 1.5 A to 25 A a t 65 C FE A T U R E S • Switching power supply applications • Special marking is available upon request
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Untitled
Abstract: No abstract text available
Text: A COMPANY OF M O DEL SSN “S O F T -S T A R T ” N TC T h e rm is to rs P re lim in a ry For In ru s h C u rre n t S u p p re s s in g D e v ic e s 1 .5 A to 2 5 A a t 6 5 C FEA TU R ES • Switching power supply applications • Special marking is available upon request
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