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    MARKING SMD NPN TRANSISTOR BR Search Results

    MARKING SMD NPN TRANSISTOR BR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING SMD NPN TRANSISTOR BR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    "marking E1"

    Abstract: BFS17 BFS17R sot 23 transistor 70.2
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter 2 95 10527 BFS17R Marking: E4


    Original     		BFS17/BFS17R BFS17 BFS17R D-74025 17-Apr-96 "marking E1" sot 23 transistor 70.2 PDF

    "marking E1"

    Abstract: BFS17R BFS17 d 1556 transistor
    Text: BFS17/BFS17R Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 1 13 581 13 581 94 9280 2 9510527 3 3 BFS17 Marking: E1


    Original     		BFS17/BFS17R BFS17 BFS17R D-74025 16-Oct-97 "marking E1" d 1556 transistor PDF

    BFS17

    Abstract: transistor BFs 18 BFS17R marking E1
    Text: BFS 17 / BFS 17 R TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features D High power gain D SMD-package 1 2 1 3 3 94 9280 BFS17 Marking: E1 Plastic case SOT 23 1= Collector; 2= Base; 3= Emitter


    Original     		BFS17 BFS17R D-74025 transistor BFs 18 marking E1 PDF

    transistor SMD s72

    Abstract: S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23
    Text: Continental Device India Limited An ISO/TS 16949 and ISO 9001 Certified Company NPN CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 2N7002 PIN COFIGURATION G= GATE S= SOURCE SOT-23 Formed SMD Package D= DRAIN Marking 2N7002=S72 Designed for High Speed Pulse Amplifier and Drive Application


    Original     		2N7002 OT-23 2N7002 C-120 2N7002Rev021104E transistor SMD s72 S72 SMD smd s72 smd transistor s72 smd transistor marking S72 smd marking S72 SmD s72 2N7002 transistor marking s72 2N7002 S72 SOT-23 2N7002 SOT-23 PDF

    TRANSISTOR SMD MARKING CODE w6

    Abstract: SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV8115T PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC
    Text: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8115T O-236AB) PBHV9115T. AEC-Q101 PBHV8115T TRANSISTOR SMD MARKING CODE w6 SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC PDF

    MARKING CODE SMD IC

    Abstract: PBHV8115Z PBHV9115Z SC-73 TRANSISTOR SMD MARKING CODE 210 transistor smd code marking 101
    Text: PBHV8115Z 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8115Z OT223 SC-73) PBHV9115Z. AEC-Q101 PBHV8115Z MARKING CODE SMD IC PBHV9115Z SC-73 TRANSISTOR SMD MARKING CODE 210 transistor smd code marking 101 PDF

    Untitled

    Abstract: No abstract text available
    Text: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8140Z OT223 SC-73) PBHV9540Z. AEC-Q101 PBHV8140Z PDF

    v8140z

    Abstract: PBHV8140Z SC-73 MARKING CODE SMD IC V8140
    Text: PBHV8140Z 500 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 December 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8140Z OT223 SC-73) PBHV9540Z. AEC-Q101 PBHV8140Z v8140z SC-73 MARKING CODE SMD IC V8140 PDF

    V8215Z

    Abstract: SC-73 MARKING CODE SMD IC PBHV8215Z 170KW
    Text: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8215Z OT223 SC-73) PBHV9215Z. AEC-Q101 PBHV8215Z V8215Z SC-73 MARKING CODE SMD IC 170KW PDF

    Untitled

    Abstract: No abstract text available
    Text: PBHV8215Z 150 V, 2 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 11 November 2009 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8215Z OT223 SC-73) PBHV9215Z. AEC-Q101 PBHV8215Z PDF

    BISS 0001

    Abstract: No abstract text available
    Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS2515MB OT883B PBSS3515MB. AEC-Q101 BISS 0001 PDF

    biss 0001

    Abstract: No abstract text available
    Text: 83B PBSS2515MB SO T8 15 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 26 January 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS2515MB OT883B PBSS3515MB. AEC-Q101 biss 0001 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS2540MB DFN1006B-3 OT883B) PBSS3540MB. AEC-Q101 PDF

    Untitled

    Abstract: No abstract text available
    Text: 83B PBSS2540MB SO T8 40 V, 0.5 A NPN low VCEsat BISS transistor Rev. 1 — 4 April 2012 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package.


    Original     		PBSS2540MB DFN1006B-3 OT883B) PBSS3540MB. AEC-Q101 PDF

    PBHV8118T

    Abstract: No abstract text available
    Text: PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8118T O-236AB) AEC-Q101 PBHV8118T PDF

    transistor smd 1E

    Abstract: SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a
    Text: SMD General Purpose Transistor NPN BC846/BC847/BC848 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data SOT-23 SOT-23, Plastic Package Case: Solderable per MIL-STD-202G, Method 208


    Original     		BC846/BC847/BC848 OT-23 OT-23, MIL-STD-202G, BC846A BC847A BC847B BC847C BC848A BC848B transistor smd 1E SMD Transistor 1f TRANSISTOR SMD MARKING CODE 1l TRANSISTOR SMD MARKING CODE 1a SMD transistor 1L 1b smd transistor smd transistor marking 1B SMD TRANSISTOR MARKING 1F transistor SMD 520 MARKING SMD npn TRANSISTOR 1a PDF

    Transistor 03 smd

    Abstract: smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03
    Text: SMD General Purpose Transistor NPN MMBT3904 SMD General Purpose Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications  RoHS compliance SOT-23 Mechanical Data Case: SOT-23, Plastic Package Terminals:


    Original     		MMBT3904 OT-23 OT-23, MIL-STD-202G, Transistor 03 smd smd transistor NF transistor smd zc 11 smd transistor zc SMD TRANSISTOR TRANSISTOR SMD fr transistor SMD 24 smd transistor marking 03 PDF

    NXP date code marking SOT89

    Abstract: No abstract text available
    Text: SO T8 9 PBHV8115X 150 V, 1 A NPN high-voltage low VCEsat BISS transistor 9 December 2013 Product data sheet 1. General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62) medium power and flat lead Surface-Mounted Device (SMD) plastic package.


    Original     		PBHV8115X SC-62) PBHV9115X. AEC-Q101 NXP date code marking SOT89 PDF

    Untitled

    Abstract: No abstract text available
    Text: PBSS4612PA 12 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PBSS4612PA OT1061 PBSS5612PA. PDF

    smd transistor marking A6

    Abstract: TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE
    Text: PBSS4620PA 20 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 18 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PBSS4620PA OT1061 PBSS5620PA. smd transistor marking A6 TRANSISTOR SMD MARKING CODE a6 NXP SMD TRANSISTOR MARKING CODE PDF

    smd transistor marking a7

    Abstract: smd TRANSISTOR code marking A7 TRANSISTOR SMD MARKING CODE a7 NXP SOT1061 Transistors TRANSISTOR SMD MARKING CODES a7
    Text: PBSS4630PA 30 V, 6 A NPN low VCEsat BISS transistor Rev. 01 — 6 May 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PBSS4630PA OT1061 PBSS5630PA. smd transistor marking a7 smd TRANSISTOR code marking A7 TRANSISTOR SMD MARKING CODE a7 NXP SOT1061 Transistors TRANSISTOR SMD MARKING CODES a7 PDF

    PBSS4580PA

    Abstract: No abstract text available
    Text: PBSS4580PA 80 V, 5.6 A NPN low VCEsat BISS transistor Rev. 01 — 15 April 2010 Product data sheet 1. Product profile 1.1 General description NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with


    Original     		PBSS4580PA OT1061 PBSS5580PA. PBSS4580PA PDF

    transistor MAR 819

    Abstract: transistor MAR 543 sl2 357 BFS17
    Text: Tem ic BFS17/BFS17R Sem iconductors Silicon NPN Planar RF Transistor Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package BFS17 Marking: El Plastic case SOT 23 1= Collector; 2= Base: 3= Emitter BFS17R Marking: E4


    OCR Scan     		BFS17/BFS17R BFS17 BFS17R 26-Mar-97 transistor MAR 819 transistor MAR 543 sl2 357 PDF

    Untitled

    Abstract: No abstract text available
    Text: wmmt BFS17/BFS17R/BFS17W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For broadband amplifiers up to 1 GHz. Features • High power gain • SMD-package 1 BFS17 Marking: E1


    OCR Scan     		BFS17/BFS17R/BFS17W BFS17 BFS17R BFS17W 20-Jan-99 PDF