Untitled
Abstract: No abstract text available
Text: 3M Heel Grounder Product Selection Guide Heel Grounder Type Closure Style Features Model Number Beige non-marking sole, burgundy hook and elastic loop Non-marking 2056 Blue non-marking sole, black elastic loop Non-marking NS-HGC1M Front Sole Grounder Front sole grounder, D-ring, black hook and loop
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HGC1M-N72-BLU
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FVXO-HC53
Abstract: FVXO-HC73 FVXO-LC53 FVXO-LC73 FXO-HC53 FXO-HC73 FXO-LC53 FXO-LC73 FXO-PC53 FXO-PC73
Text: XpressO Package Dimensions, Marking & Labeling Dimensions, marking patterns and product labeling for the two currently available Fox XpressO packages are shown below. 7 x 5 mm 7.5 5 5x x3.2 3.2mm mm Typical XpressO marking configurations are illustrated below. Note that in all cases, Pin 1
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SG180DY,
12F-6
FOX-G-3544
FVXO-HC53
FVXO-HC73
FVXO-LC53
FVXO-LC73
FXO-HC53
FXO-HC73
FXO-LC53
FXO-LC73
FXO-PC53
FXO-PC73
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KLT20
Abstract: k1648 klt22 KEL32 MC100 HEP64 KLT21 LP17 KEP32 HEP139
Text: AND8002/D ECLinPS, ECLinPS Lite, ECLinPS Plus, ECLinPS MAX, and GigaComm Marking and Ordering Information Guide http://onsemi.com APPLICATION NOTE Prepared by: Paul Shockman ON Semiconductor HFPD Applications Engineer Introduction This application note describes the device markings and
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AND8002/D
KLT20
k1648
klt22
KEL32
MC100
HEP64
KLT21
LP17
KEP32
HEP139
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485G
Abstract: EP11 NB7L11M
Text: NB7L11M 2.5V/3.3V Differential 1:2 Clock/Data Fanout Buffer/ Translator with CML Outputs and Internal Termination http://onsemi.com MARKING DIAGRAM* Description The NB7L11M is a differential 1−to−2 clock/data distribution chip with internal source termination and CML output structure, optimized
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NB7L11M
NB7L11M
LVEP11,
NB7L11M/D
485G
EP11
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Untitled
Abstract: No abstract text available
Text: NB7L11M 2.5V/3.3V Differential 1:2 Clock/Data Fanout Buffer/ Translator with CML Outputs and Internal Termination http://onsemi.com MARKING DIAGRAM* Description The NB7L11M is a differential 1−to−2 clock/data distribution chip with internal source termination and CML output structure, optimized
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NB7L11M
NB7L11M
LVEP11,
NB7L11M/D
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485G
Abstract: EP11 NB7L11M
Text: NB7L11M 2.5V/3.3V Differential 1:2 Clock/Data Fanout Buffer/ Translator with CML Outputs and Internal Termination http://onsemi.com MARKING DIAGRAM* Description The NB7L11M is a differential 1−to−2 clock/data distribution chip with internal source termination and CML output structure, optimized
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NB7L11M
NB7L11M
LVEP11,
NB7L11M/D
485G
EP11
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HEL16
Abstract: DEVICE MARKING CODE table onsemi marking marking code onsemi marking code onsemi Diode kel33 on semiconductor traceability marking soic HEL32 HEL12 HEL31 HEL05
Text: AND8002/D ECLinPS, ECLinPS Lite, ECLinPS Plus, ECLinPS MAX, and GigaComm Marking and Ordering Information Guide http://onsemi.com APPLICATION NOTE Prepared by: Paul Shockman ON Semiconductor HFPD Applications Engineer Introduction This application note describes the device markings and
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AND8002/D
HEL16
DEVICE MARKING CODE table
onsemi marking
marking code onsemi
marking code onsemi Diode
kel33
on semiconductor traceability marking soic
HEL32
HEL12 HEL31
HEL05
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QFN-16
Abstract: 485G EP11 NB7L11M
Text: NB7L11M 2.5V/3.3V Differential 1:2 Clock/Data Fanout Buffer/ Translator with CML Outputs and Internal Termination http://onsemi.com MARKING DIAGRAM* Description The NB7L11M is a differential 1−to−2 clock/data distribution chip with internal source termination and CML output structure, optimized
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NB7L11M
NB7L11M
LVEP11,
NB7L11M/D
QFN-16
485G
EP11
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485G
Abstract: EP11 NB7L11M
Text: NB7L11M 2.5V/3.3V Differential 1:2 Clock/Data Fanout Buffer/ Translator with CML Outputs and Internal Termination http://onsemi.com MARKING DIAGRAM* Description The NB7L11M is a differential 1−to−2 clock/data distribution chip with internal source termination and CML output structure, optimized
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NB7L11M
NB7L11M
LVEP11,
NB7L11M/D
485G
EP11
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cFeon EN29
Abstract: cfeon en29lv320ab cFeon EN29LV320A cFeon EN eon en29
Text: EN29LV320A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV320A
cFeon EN29
cfeon en29lv320ab
cFeon
EN29LV320A
cFeon EN
eon en29
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Untitled
Abstract: No abstract text available
Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV640T/B
00B5h
00C5h
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cFeon EN
Abstract: cFeon sg32 diode EN29LV640B 7400 4p toggle switch 555 data sheet cFeon EN29LV640B cFeon F data sheet 555
Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV640T/B
cFeon EN
cFeon
sg32 diode
EN29LV640B
7400
4p toggle switch
555 data sheet
cFeon EN29LV640B
cFeon F
data sheet 555
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cFeon
Abstract: cFeon F cFeon EN29LV640B cFeon EN29lv640 A0-A21 EN29LV640b cfeon flash 72-SA
Text: EN29LV640T/B Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV640T/B
cFeon
cFeon F
cFeon EN29LV640B
cFeon EN29lv640
A0-A21
EN29LV640b
cfeon flash
72-SA
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Pt 3750 rtd
Abstract: Cyntec Cyntec probe sg1024 PT 100 specification detail 3750 rtd SG10 CYNTEC8801 rtd schematic CYNTECXXXX
Text: 1 2 3 4 450+20 -0 78±2.5 7.8MAX. 53 NOTE : SEE NOTE #9 CYNTEC φ5.00 TUBE END VIEW 3. MAXIMUM AMBIENT TEMPERATURE: 400° C B FEMALE 6.3x0.8 HEAT SHRINK TUBE 1. CYNTEC PART NUMBER:SG10244XXX 2. OPERATION TEMPERATURE RANGE:-40° C TO 350° C A 50MIN. SG10244XXX
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SG10244XXX
50MIN.
24AWG
5X78L)
CYN-8Y-004
Pt 3750 rtd
Cyntec
Cyntec probe
sg1024
PT 100 specification detail
3750 rtd
SG10
CYNTEC8801
rtd schematic
CYNTECXXXX
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diode T3 Marking
Abstract: SG10SC4 SG10SC4M DIODE t3
Text: Schottky Barrier Diode Twin Diode •fl- tlH O UTLINE SG10SC4M 40 V 10A Feature • Tj=1751C • Tj=175°C • Full Molded Main Use • Switching Regulator • DC/DC Z \ y jK - $ • DC/DC Converter • m m.'f-h. 0A#t§ • mm.rtt-sznmm • Home Appliance, Game, Office Automation
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OCR Scan
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SG10SC4M
FTO-220G
SG10SC4M
50Hz-C
diode T3 Marking
SG10SC4
DIODE t3
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SG10SC9M
Abstract: SG10SC9
Text: Schottky Barrier Diode Twin Diode OUTLINE SG10SC9M 90 V 10 A Feature • Tj=150t: • Tj=150°C • P rrsm T l K r j y i s x f ä M . • P r r s m Rating • Full Molded • Dielectric Strength 2kV •¡fg *» Œ 2kV SU Main Use • Switching Regulator • DC/DC Converter
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OCR Scan
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PDF
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SG10SC9M
251/unless
J533-1)
SG10SC9M
SG10SC9
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SG10LC20USM
Abstract: No abstract text available
Text: Super Fast Recovery Diode Twin Diode • i f 110 SG10LC20USM Package OUTLINE ' Unit • mm FTO-22QG Weight 1.54g Typ 200V 10A L5 Feature • Low Noise • trr=25ns • Full Molded • trr=25ns Main Use • 7. ' i ' y f y ' f W • • • • ffi.FA Switching Regulator
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OCR Scan
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SG10LC20USM
FTO-22QG
J533-1)
SG10LC20USM
CJ533-1
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SG10SC9
Abstract: SG10SC9M
Text: Schottky Barrier Diode Twin Diode mtmm SG10SC9M o u t lin e 90 V 10A Feature • Tj=175°C • Tj=175°C • Full Molded Main Use • Switching Regulator • DC/DC n y j ï —9 • DC/DC Converter • m m . t f - h . oAm §§ • Home Appliance, Game, Office Automation
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OCR Scan
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PDF
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SG10SC9M
FTO-220G
SG10SC9M
i50HzT
CJ533-1
SG10SC9
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SG10SC6
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE SG10SC6M 60 V 10 A Feature • T j= 1 5 0 t: • T j= 1 5 0 °C • P rrs m T l K r j y i s x f ä M . • P r r s m Rating • Full M o ld e d •¡S ê λ Œ 1 .5 k V < £ fiI • Dielectric Strength 1,5kV • 7
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OCR Scan
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PDF
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SG10SC6M
251/unless
6-88-y
SG10SC6
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SG10LC20USM
Abstract: fast recovery diode low voltage FT0220G
Text: Super Fast Recovery Diode Twin Diode SG10LC20USM O U TLIN E 200V 10A Fe a tu re •i& y 'fx • trr=25ns • 711^-10 K 2kV S I I • • • • Low Noise tnr=25ns Full Molded Dielectric Strength 2kV M ain U s e • y ^ 'O n - n • =^3S, OA, 88 •ÌH 8 .F A
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SG10LC20USM
FT0220G
J533-1
CJ533-1
SG10LC20USM
fast recovery diode low voltage
FT0220G
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode OUTLINE SG10SC4M Unit : mm Package I FTO-220G Weight 1.54g Typ> 40 V 10 A 4.5 Feature • Tj=i5(rc • Tj=150°C • P r r s m P K t? • P rrsm Rating • t ë ï i H Œ 2k V ( S I I • Full Molded • Dielectric Strength 2kV
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OCR Scan
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SG10SC4M
FTO-220G
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SG10SC6
Abstract: SG10SC6M FTO-220G L50Hz SG10S G10SC6M
Text: Schottky Barrier Diode Twin Diode mtm SG10SC6M OUTLINE 60 V 10 A Feature • Tj=175°C • Tj=175°C • P R R S M ^ A '^ V Î / l f f i l Œ • P rrsm • 711^-11 F Rating • Full Molded • ÎË iB IÎŒ 1 .5 k V ffilI • Dielectric Strength 1,5kV • D C /D C
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OCR Scan
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PDF
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SG10SC6M
FTO-220G
50Hz-C
SG10SC6
SG10SC6M
FTO-220G
L50Hz
SG10S
G10SC6M
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SG10SC6M
Abstract: marking XN
Text: Schottky Barrier Diode Twin Diode • fl- tlH OUTLINE SG10SC6M 60 V 10A Feature • Tj=1751C • Tj=175°C • Full Molded Main Use • Switching Regulator • DC/DC Z \ y j K - $ • DC/DC Converter • m m .'f- h . 0A#t§ • m m .rtt-s z n m m • Home Appliance, Game, Office Automation
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OCR Scan
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PDF
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SG10SC6M
FTO-220G
50Hz-C
marking XN
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SG10SC4M
Abstract: SG10SC4 diode T3 Marking 2KV DIODE
Text: Schottky Barrier Diode Twin Diode mtm SG10SC4M 40V OUTLINE A Feature • Tj=175°C • Tj=175°C • P R R S M ^ A '^ V Î / lf f ilŒ • •7 1 1 ^ -1 1 F P r r s m Rating • Full Molded • fflmm 2kV«IŒ • Dielectric Strength 2kV Main Use W E M ÏM
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SG10SC4M
FTO-220G
50Hz-C
SG10SC4M
SG10SC4
diode T3 Marking
2KV DIODE
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