Y1416
Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information
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AND8004/D
14xxx
Y1416
vk sot-363
LCX00
AND8004
MC74HC04ADR2
ASE CHUNGLI
date code marking
"marking Code" V2
MX marking code sot23
marking a6 sot363
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marking codes fairchild
Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to
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AND8004/D
14xxx
r14525
AND8004/D
marking codes fairchild
SOT-363 a7
wz 74 marking
SOT-363 MARKING WF
marking 324 tssop 16
vk sot-363
On Semiconductor Logic Data Code and Traceability
marking code cp
SOT-363 A1 marking codes
ON TSOP6 MARKING 6L
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marking codes fairchild
Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to
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AND8004/D
r14525
marking codes fairchild
HEP08
fairchild marking codes sot-23
TOREX TOP CODE
AND8004
t324
SOT-353 A7
marking L5 sot363
xaa643
and8004 D
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marking CODE W2D
Abstract: marking w2d
Text: MC74VHC1G126 Noninverting 3-State Buffer The MC74VHC1G126 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G126
353/SC
marking CODE W2D
marking w2d
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Wafer Fab Plant Codes ST
Abstract: V = Device Code T138-A marking 563 fairchild ALPHA NEW YEAR DATE CODE marking t132 marking sbn DIODE M7 SMP HEP08
Text: MC74HC1G32 2-Input OR Gate The MC74HC1G32 is a high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G32
MC74HC
353/SC
Wafer Fab Plant Codes ST
V = Device Code
T138-A
marking 563 fairchild
ALPHA NEW YEAR DATE CODE
marking t132
marking sbn
DIODE M7 SMP
HEP08
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V = Device Code
Abstract: GATE MARKING CODE VX SOT23 AND8004 AND8004/D
Text: MC74VHC1GT50 Noninverting Buffer / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT50 is a single gate noninverting buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS
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MC74VHC1GT50
V = Device Code
GATE MARKING CODE VX SOT23
AND8004
AND8004/D
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V = Device Code
Abstract: diode Marking code v3 on semi aa sot353 TOREX TOP CODE
Text: MC74VHC1GT32 2-Input OR Gate/CMOS Logic Level Shifter The MC74VHC1GT32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining
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MC74VHC1GT32
V = Device Code
diode Marking code v3 on semi
aa sot353
TOREX TOP CODE
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wz 74 marking
Abstract: t138a V = Device Code
Text: MC74HC1G02 2-Input NOR Gate The MC74HC1G02 is a high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G02
MC74HC
353/SC
wz 74 marking
t138a
V = Device Code
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marking t132
Abstract: marking code V6 diode MC74VHC1G08 V = Device Code
Text: MC74VHC1G08 2-Input AND Gate The MC74VHC1G08 is an advanced high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G08
353/SC
marking t132
marking code V6 diode
V = Device Code
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vsop8 package outline
Abstract: vsop8 V = Device Code SOT 363 marking CODE LA marking h8 Wafer Fab Plant Codes ST marking 62 ON Semi diode Marking code v3 hep08 marking code vhc
Text: MC74VHC1G09 2-Input AND Gate with Open Drain Output The MC74VHC1G09 is an advanced high speed CMOS 2–input AND gate with open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G09
vsop8 package outline
vsop8
V = Device Code
SOT 363 marking CODE LA
marking h8
Wafer Fab Plant Codes ST
marking 62 ON Semi
diode Marking code v3
hep08
marking code vhc
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H2D MARKING CODE
Abstract: marking code V6 DIODE V = Device Code H2D Marking diode Marking code v3
Text: MC74HC1G08 2-Input AND Gate The MC74HC1G08 is a high speed CMOS 2–input AND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation. The internal circuit is composed of three stages, including a buffer
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MC74HC1G08
MC74HC
353/SC
H2D MARKING CODE
marking code V6 DIODE
V = Device Code
H2D Marking
diode Marking code v3
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V = Device Code
Abstract: diode T132
Text: MC74VHC1GU04 Unbuffered Inverter The MC74VHC1GU04 is an advanced high speed CMOS Unbuffered inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1GU04
MC74VHCU04
MC74VHC1G04
MC74VHC04
V = Device Code
diode T132
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torex new marking
Abstract: TOSHIBA el suffix V = Device Code
Text: MC74VHC1G03 2-Input NOR Gate with Open Drain Output The MC74VHC1G03 is an advanced high speed CMOS 2–input NOR gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low
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MC74VHC1G03
torex new marking
TOSHIBA el suffix
V = Device Code
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ON Semiconductor marking
Abstract: marking code v6 29 DIODE V = Device Code diode Marking code v3 marking t08 TOSHIBA el suffix Wafer Fab Plant Codes ST t02 y95 H2 sc88a
Text: MC74VHC1GT02 2-Input NOR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT02 is a single gate 2–input NOR fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1GT02
ON Semiconductor marking
marking code v6 29 DIODE
V = Device Code
diode Marking code v3
marking t08
TOSHIBA el suffix
Wafer Fab Plant Codes ST
t02 y95
H2 sc88a
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hep08
Abstract: marking code V6 diode V = Device Code
Text: MC74VHC1G32 2-Input OR Gate The MC74VHC1G32 is an advanced high speed CMOS 2–input OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Shortly TTL while maintaining CMOS low power dissipation.
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MC74VHC1G32
353/SC
hep08
marking code V6 diode
V = Device Code
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TOSHIBA el suffix
Abstract: AND8004 AND8004/D V = Device Code
Text: MC74VHC1G14 Schmitt-Trigger Inverter The MC74VHC1G14 is a single gate CMOS Schmitt–trigger inverter fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G14
TOSHIBA el suffix
AND8004
AND8004/D
V = Device Code
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ON Semiconductor marking
Abstract: marking VU sot363 V = Device Code SOT23 "Marking Code" t04 ON TSOP6 MARKING 6L marking 62 ON Semi VM MARKING CODE SOT353 marking code V6 diode
Text: MC74VHC1GT86 2-Input Exclusive OR Gate / CMOS Logic Level Shifter with LSTTL–Compatible Inputs The MC74VHC1GT86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky
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MC74VHC1GT86
ON Semiconductor marking
marking VU sot363
V = Device Code
SOT23 "Marking Code" t04
ON TSOP6 MARKING 6L
marking 62 ON Semi
VM MARKING CODE SOT353
marking code V6 diode
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ON Semiconductor marking
Abstract: Wafer Fab Plant Codes ST 051 MPC V = Device Code T138A
Text: MC74VHC1G50 Product Preview Buffer The MC74VHC1G50 is an advanced high speed CMOS buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G50
353/SC
ON Semiconductor marking
Wafer Fab Plant Codes ST
051 MPC
V = Device Code
T138A
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SOT-353 MARKING VL
Abstract: No abstract text available
Text: MC74VHC1G125 Noninverting 3-State Buffer The MC74VHC1G125 is an advanced high speed CMOS noninverting 3–state buffer fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power
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MC74VHC1G125
SOT-353 MARKING VL
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diode Marking code v3
Abstract: sot 23-5 marking code H5 V = Device Code marking H5 sot 23-5 Wafer Fab Plant Codes ST fairchild mos xaa64 MC74HC1G14
Text: MC74HC1G14 Inverter with Schmitt-Trigger Input The MC74HC1G14 is a high speed CMOS inverter with Schmitt–Trigger input fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent LSTTL while maintaining CMOS low power dissipation.
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MC74HC1G14
MC74HC
353/SC
diode Marking code v3
sot 23-5 marking code H5
V = Device Code
marking H5 sot 23-5
Wafer Fab Plant Codes ST
fairchild mos
xaa64
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V = Device Code
Abstract: vsop8 package outline Wafer Fab Plant Codes ST 14XXX T138A
Text: MC74VHC1G86 2-Input Exclusive OR Gate The MC74VHC1G86 is an advanced high speed CMOS 2–input Exclusive OR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G86
353/SC
V = Device Code
vsop8 package outline
Wafer Fab Plant Codes ST
14XXX
T138A
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V = Device Code
Abstract: No abstract text available
Text: MC74VHC1G02 2-Input NOR Gate The MC74VHC1G02 is an advanced high speed CMOS 2–input NOR gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G02
353/SC
V = Device Code
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V = Device Code
Abstract: MC74VHC1G00
Text: MC74VHC1G00 2-Input NAND Gate The MC74VHC1G00 is an advanced high speed CMOS 2–input NAND gate fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low power dissipation.
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MC74VHC1G00
353/SC
V = Device Code
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PC 74 HCT 32 P
Abstract: U-046 V = Device Code
Text: MC74VHC1G01 2-Input NAND Gate with Open Drain Output The MC74VHC1G01 is an advanced high speed CMOS 2–input NAND gate with an open drain output fabricated with silicon gate CMOS technology. It achieves high speed operation similar to equivalent Bipolar Schottky TTL while maintaining CMOS low
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MC74VHC1G01
PC 74 HCT 32 P
U-046
V = Device Code
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