marking s8 diode
Abstract: s8 marking RB751V-40 MARKING CODE S8
Text: RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PINNING Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol
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RB751V-40
OD-323
OD-323
marking s8 diode
s8 marking
RB751V-40
MARKING CODE S8
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marking s8 diode
Abstract: RB751V-40
Text: RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE PINNING Features • Small surface mounting type • Low reverse current and low forward voltage • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 S8 Top View Marking Code: "S8" Simplified outline SOD-323 and symbol
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RB751V-40
OD-323
OD-323
marking s8 diode
RB751V-40
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all diodes ratings
Abstract: BAT43WS s7 200 BAT42WS
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
all diodes ratings
s7 200
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BAT42WS
Abstract: BAT43WS
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 + FEATURES - MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SOD-323 SCHOTTKY BARRIER DIODE FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @Ta=25℃ Parameter Symbol
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42WS
BAT43WS
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s7 200
Abstract: BAT42W BAT43W
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes BAT42W/BAT43W SCHOTTKY DIODES SOD-123 FEATURES MARKING: BAT42W S7 BAT43W S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42W/BAT43W
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OD-123
BAT42W/BAT43W
OD-123
BAT42W
BAT43W
200mA
BAT42W
BAT43W
s7 200
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s7 200
Abstract: BAT42W BAT42WS BAT43W BAT43WS
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes BAT42WS/BAT43WS SCHOTTKY DIODES SOD-323 FEATURES MARKING: BAT42WS S7 BAT43WS S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Symbol BAT42WS/BAT43WS
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OD-323
BAT42WS/BAT43WS
OD-323
BAT42WS
BAT43WS
200mA
BAT42W
BAT43W
s7 200
BAT42W
BAT43W
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Untitled
Abstract: No abstract text available
Text: SOD-123 Plastic-Encapsulate Diodes BAT42W/BAT43W SCHOTTKY DIODES SOD-123 FEATURES z Low Forward Voltage Drop z Fast Switching Time z Surface Mount Package Ideally Suited for Automatic Insertion + MARKING: BAT42W S7 BAT43W S8 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-123
BAT42W/BAT43W
OD-123
BAT42W
BAT43W
200mA
BAT42W
BAT43W
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S8 MARKING ON SOT23 PACKAGE
Abstract: Diode SOT-23 marking s8 DBS SOT23 MARKING CODE marking code js 3 pin diode diode MARKING CODE 930 diode 1504 JS marking diode marking s8 diode Js MARKING CODE SOT23 TA 1504
Text: BAT 15-04 Silicon Dual Schottky Diode ● ● ● DBS mixer applications to 12 GHz Low noise figure Low barrier type Type Ordering Code tape and reel Pin Configuration Marking 1 2 3 Package BAT 15-04 Q62702-A504 A SOT-23 – C S8 Maximum Ratings Parameter
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Q62702-A504
OT-23
S8 MARKING ON SOT23 PACKAGE
Diode SOT-23 marking s8
DBS SOT23 MARKING CODE
marking code js 3 pin diode
diode MARKING CODE 930
diode 1504
JS marking diode
marking s8 diode
Js MARKING CODE SOT23
TA 1504
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smd diode s8
Abstract: DIODE SMD MARKING CODE S8 SMD MARKING CODE s8 marking s8 diode SMD MARKING CODE A10 RB751V-40WS smd a10 smd transistor marking A10 diode MARKING A10 smd diode fr
Text: RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323F B C Features A Low power loss, high current capability, low VF, low IR Surface device type mounting D Moisture sensitivity level 1 Pb free version and RoHS compliant Green compound Halogen free with suffix "G" on
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RB751V-40WS
200mW,
OD-323F
OD-323F
MIL-STD-202,
smd diode s8
DIODE SMD MARKING CODE S8
SMD MARKING CODE s8
marking s8 diode
SMD MARKING CODE A10
RB751V-40WS
smd a10
smd transistor marking A10
diode MARKING A10
smd diode fr
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smd diode s8
Abstract: SMD MARKING CODE s8 smd s8 smd diode code b1 SMD marking code B10 DIODE SMD MARKING CODE S8 MARKING CODE MG diode diode b10 SOD-323F SMD diode Marking X1
Text: RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323F B C Features A Low power loss, high current capability, low VF, low IR Surface device type mounting D Moisture sensitivity level 1 Pb free version and RoHS compliant Green compound Halogen free with suffix "G" on
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RB751V-40WS
200mW,
OD-323F
OD-323F
MIL-STD-202,
smd diode s8
SMD MARKING CODE s8
smd s8
smd diode code b1
SMD marking code B10
DIODE SMD MARKING CODE S8
MARKING CODE MG diode
diode b10
SOD-323F
SMD diode Marking X1
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smd diode s8
Abstract: smd diode code b1 DIODE SMD MARKING CODE S8
Text: RB751V-40WS 200mW, Low VF SMD Schottky Barrier Diode Small Signal Diode SOD-323F B C Features A Low power loss, high current capability, low VF, low IR Surface device type mounting D Moisture sensitivity level 1 Pb free version and RoHS compliant Green compound Halogen free with suffix "G" on
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RB751V-40WS
200mW,
OD-323F
OD-323F
MIL-STD-202,
smd diode s8
smd diode code b1
DIODE SMD MARKING CODE S8
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1009i
Abstract: No abstract text available
Text: FT1009 LT1009 Series 2.5V Reference 2.5V Reference U Features FEATURES DESCRIPTIO Description • The FT1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current
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LT1009
FT1009
FT1009
FT1009,
FTT136
1009i
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LT 485 so8 DATA SHEET
Abstract: Diode Marking z3 SOT-23 LT1009CZ DATA SHEET LT317A LT317 MS8 PACKAGE 1009I LM136 LT1009 LT1009CH
Text: LT1009 Series 2.5V Reference U FEATURES DESCRIPTIO • The LT 1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current range enhances its versatility. The 0.2% reference tolerance is achieved by on-chip trimming which not only
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LT1009
LM136
LT1236
LT1460
10ppm/
OT-23
LT1634
LT1461
1009fd
LT 485 so8 DATA SHEET
Diode Marking z3 SOT-23
LT1009CZ DATA SHEET
LT317A
LT317
MS8 PACKAGE
1009I
LT1009CH
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MARKING CODE S8
Abstract: RB751V-40 marking s8 diode
Text: RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE High Speed Switching Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low reverse current and low forward voltage • High reliability 1 Cathode 2 Anode 2 1 S8 Top View
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PDF
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RB751V-40
OD-323
OD-323
MARKING CODE S8
RB751V-40
marking s8 diode
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RB751V-40
Abstract: No abstract text available
Text: RB751V-40 SILICON EPITAXIAL PLANAR SCHOTTKY BARRIER DIODE High Speed Switching Applications PINNING Features DESCRIPTION PIN • Small surface mounting type • Low reverse current and low forward voltage • High reliability 1 Cathode 2 Anode 2 1 S8 Top View
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RB751V-40
OD-323
OD-323
RB751V-40
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1009I
Abstract: LT1009CZ LT317A 1009f 406p LT1019 LM136 LT1009 LT1009CH LT1009I
Text: LT1009 Series 2.5V Reference FEATURES DESCRIPTION n The LT 1009 is a precision trimmed 2.5V shunt regulator diode featuring a maximum initial tolerance of only ±5mV. The low dynamic impedance and wide operating current range enhances its versatility. The 0.2% reference
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LT1009
LM136
LT1236
LT1460
10ppm/
OT-23
LT1634
LT1461
1009ff
1009I
LT1009CZ
LT317A
1009f
406p
LT1019
LT1009CH
LT1009I
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Untitled
Abstract: No abstract text available
Text: LM185-1.2/ LM285-1.2/LM385-1.2 Micropower Voltage Reference FEATURES • ■ ■ U ■ DESCRIPTIO 10µA to 20mA Operating Range Guaranteed 1% Initial Voltage Tolerance Guaranteed 1Ω Dynamic Impedance Very Low Power Consumption The LM185-1.2 is a two terminal band gap reference diode
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LM185-1
LM285-1
2/LM385-1
LM385-1
LT1004-1
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LT1034
Abstract: LM385 LM385H LM334 LM385-1 LT1494 3851b TA01a LT 3851
Text: LM185-1.2/ LM285-1.2/LM385-1.2 Micropower Voltage Reference U FEATURES • ■ ■ ■ DESCRIPTIO 10µA to 20mA Operating Range Guaranteed 1% Initial Voltage Tolerance Guaranteed 1Ω Dynamic Impedance Very Low Power Consumption The LM185-1.2 is a two terminal band gap reference diode
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LM185-1
LM285-1
2/LM385-1
LM385-1
LT1004-1
LT1034
LM385
LM385H
LM334
LT1494
3851b
TA01a
LT 3851
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MARKING S8
Abstract: No abstract text available
Text: BAT42WS / BAT43WS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features • · · Low Forward Voltage Drop Fast Switching Ultra-Small Surface Mount Package E D A B Mechanical Data · · · · · · SOD-323 Case: SOD-323, Plastic Leads: Solderable per MIL-STD-202, Method 208
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BAT42WS
BAT43WS
OD-323
OD-323,
MIL-STD-202,
BAT43WS
MARKING S8
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Crossover Ring Quad Schottky Diode BAT 14-099R • Medium barrier diode for double balanced mixers, phase detectors and modulators ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 14-099R S8 Ordering Code
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OCR Scan
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PDF
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14-099R
Q62702-A0042
14-099R
OT-143
EHA07012
fl535bQ5
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Dual Schottky Diode BAT 15-04 Features • DBS mixer applications to 12 GHz • Low noise figure • Low barrier type 5:1 Type Ordering Code ' tape and reel BAT 15-04 Pin Configuration 1 2 Marking Package S8 SOT-23 3 | Q62702-A504 Maximum Ratings
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OCR Scan
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PDF
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Q62702-A504
OT-23
EHD07082
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Untitled
Abstract: No abstract text available
Text: PHOTO RELAY TLP595B TLP595B TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP595B consists of an alum inum gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a six lead plastic DIP package. The TLP595B is a bi-directional switch which can replace mechanical
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OCR Scan
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TLP595B
TLP595B)
TLP595B
200mA
2500Vrms
UL1577,
E67349
201b2
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