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    MARKING RA7 Search Results

    MARKING RA7 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING RA7 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MT47H128M8CF-25

    Abstract: 8 resistor array 10k smd 103
    Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration


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    PDF MT47H128M8 MT47H64M16 18-compatible) 8192-cycle 09005aef840eff89 MT47H128M8CF-25 8 resistor array 10k smd 103

    Untitled

    Abstract: No abstract text available
    Text: 2Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H256M8 – 32 Meg x 8 x 8 banks MT47H128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • • Marking • Configuration


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    PDF MT47H256M8 MT47H128M16 60-ball 84-ball DDR2-800) DDR2-667) 09005aef8441c566

    Untitled

    Abstract: No abstract text available
    Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration


    Original
    PDF MT47H128M8 MT47H64M16 84-ball 60-ball DDR2-800) DDR2-667) 09005aef85a711f4

    Untitled

    Abstract: No abstract text available
    Text: 1Gb: x8, x16 Automotive DDR2 SDRAM Features Automotive DDR2 SDRAM MT47H128M8 – 16 Meg x 8 x 8 banks MT47H64M16 – 8 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • • • • • • • • • • Marking • Configuration


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    PDF MT47H128M8 MT47H64M16 60-ball 84-ball DDR2-800) DDR2-667) 09005aef840eff89

    u68a equivalent

    Abstract: MT47H128M8HQ-3
    Text: 1Gb: x4, x8, x16 1.55V DDR2 SDRAM Features DDR2 SDRAM MT47R256M4 – 32 Meg x 4 x 8 banks MT47R128M8 – 16 Meg x 8 x 8 banks MT47R64M16 – 8 Meg x 16 x 8 banks Options1 • • • • • • • • • • • • • • • • • • • Marking • Configuration


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    PDF MT47R256M4 MT47R128M8 MT47R64M16 18-compatible) 8192-cycle 09005aef82b91d01 u68a equivalent MT47H128M8HQ-3

    sandisk 32GB Nand flash

    Abstract: Sandisk NAND Flash memory controller ecc SanDisk compactflash datasheet IC s WITH 4 NAND S 16gb chip SANDISK 32gb nand car navigation system sandisk 32gb SANDISK 32gb nand MLC sandisk Nand flash
    Text: 1/2 NAND-Type Flash Memory Controller GBDriver RA7 Conformity to RoHS Directive PCMCIA, ATA Interface Type For Embedded Systems/ Silicon Disk/ CompactFlash The latest NAND-type flash memory boasts a 4-kbyte page size (previously 2-kbyte). The storage capacity continues to expand with finer


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    PDF ap100) 48MHz VFBGA100pin sandisk 32GB Nand flash Sandisk NAND Flash memory controller ecc SanDisk compactflash datasheet IC s WITH 4 NAND S 16gb chip SANDISK 32gb nand car navigation system sandisk 32gb SANDISK 32gb nand MLC sandisk Nand flash

    Untitled

    Abstract: No abstract text available
    Text: Electronic housing - UM108-PROFIL 100CM - 2907525 Please be informed that the data shown in this PDF Document is generated from our Online Catalog. Please find the complete data in the user's documentation. Our General Terms of Use for Downloads are valid


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    PDF com/us/produkte/2907525 UM108-PROFIL 100CMÂ 45-Profil

    footprint jedec MS-026 TQFP

    Abstract: dsPIC30F6001 dsPIC30F6003 DSPIC30F PWM4L 14X14X1 JEDEC MS-026 footprint footprint jedec MS-026 TQFP 44 C04-092
    Text: M dsPIC30F Early Production Devices High Performance 16-bit Microcontrollers  2002 Microchip Technology Inc. Advance Information DS70085A Note the following details of the code protection feature on PICmicro MCUs. • • • • • • The PICmicro family meets the specifications contained in the Microchip Data Sheet.


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    PDF dsPIC30F 16-bit DS70085A D-85737 DS70085A-page footprint jedec MS-026 TQFP dsPIC30F6001 dsPIC30F6003 DSPIC30F PWM4L 14X14X1 JEDEC MS-026 footprint footprint jedec MS-026 TQFP 44 C04-092

    18f2431

    Abstract: PIC18f4431 PWM example codes pic18f2231 pic 4431 D005B PIC18F2X31 PWM525 PIC18F2331-2431-4331-4431 4431 4431 8 PIN
    Text: PIC18F2331/2431/4331/4431 PIC18F2331/2431/4331/4431 Data Sheet Errata In the Device Data Sheet DS39616B , the following clarifications and corrections should be noted. Any silicon issues related to the PIC18F2331/2431/4331/4431 will be reported in a separate silicon errata. Please


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    PDF PIC18F2331/2431/4331/4431 PIC18F2331/2431/4331/4431 DS39616B) DS80239A-page 18f2431 PIC18f4431 PWM example codes pic18f2231 pic 4431 D005B PIC18F2X31 PWM525 PIC18F2331-2431-4331-4431 4431 4431 8 PIN

    SANDISK 32gb nand MLC

    Abstract: S1602 SanDisk compactflash datasheet SANDISK 32gb nand 16gb chip GBDriver TDK GBDriver SANDISK 16gb sandisk 32GB CompactFlash
    Text: 1/2 NAND侏描贋陣崙匂IC GBDriver RA7 RoHS峺綜斤哘恢瞳 PCMCIA,ATA 俊笥侏 園秘譜姥 / 壕甘徒 /CompactFlash 喘 恷仟NAND侏描贋議匈中寄弌制婢葎4kbyte/page(勧由葎2kbyte/page),育昧彭侃尖議娼聾晒式謹峙室宝議序婢,寄否楚晒囹窟融敬値序。


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    PDF RA74kbyte/pageNANDICTDK NAND1GB16GB RA64kbyte/pageNAND TQFP128pin VFBGA100pin 16GByte 32GByte 23MByte/s 24MByte/S1602 48MHz SANDISK 32gb nand MLC S1602 SanDisk compactflash datasheet SANDISK 32gb nand 16gb chip GBDriver TDK GBDriver SANDISK 16gb sandisk 32GB CompactFlash

    GBDriver

    Abstract: BY marking IC marking jw
    Text: 1/2 NAND型フラッシュメモリコントローラIC GBDriver RA7 RoHS指令対応製品 PCMCIAATA インタフェースタイプ 組み込み機器/シリコンディスク/ CompactFlash® 用 最新 )、プロセスの微細化および多


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    PDF RA74kbyte/page 1GByte16GByte NAND2GByte32GByte RA64kbyte/pageNAND TQFP128pin VFBGA100pin 16GByte 32GByte 23MByte/s150 24MByte/s160 GBDriver BY marking IC marking jw

    SRA2207SF

    Abstract: r22 transistor marking RA7
    Text: SRA2207SF Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


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    PDF SRA2207SF OT-23F KSR-2035-000 -10mA -10mA, SRA2207SF r22 transistor marking RA7

    SRA2207S

    Abstract: code ra7 13001 TRANSISTOR marking RA7 ra7 marking marking code RA7 Transistor sot23
    Text: SRA2207S Semiconductor PNP Silicon Transistor Descriptions • Switching application • Interface circuit and driver circuit application Features • • • • With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process


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    PDF SRA2207S OT-23 -10mA -10mA, KSR-2037-000 SRA2207S code ra7 13001 TRANSISTOR marking RA7 ra7 marking marking code RA7 Transistor sot23

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Serial EEPROM Series Automotive EEPROM 105 Operation Microwire BUS EEPROM 3-Wire BR93Axx-WM (1K 2K 4K 8K 16K) General Description BR93Axx-WM is serial EEPROM of serial 3-line interface method. Features ̈ 3-line communications of chip select, serial clock, serial data


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    PDF BR93Axx-WM BR93Axx-WM 16Kbit

    EEPROM RA66

    Abstract: ra86 eeprom
    Text: Datasheet Serial EEPROM Series Automotive EEPROM 105℃ Operation Microwire BUS EEPROM 3-Wire BR93Axx-WM (1K 2K 4K 8K 16K) ●General Description BR93Axx-WM is serial EEPROM of serial 3-line interface method. ●Features „ 3-line communications of chip select, serial clock, serial data


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    PDF BR93Axx-WM BR93Axx-WM 16Kbit EEPROM RA66 ra86 eeprom

    EEPROM RA66

    Abstract: marking A46
    Text: Datasheet Serial EEPROM Series Automotive EEPROM 105℃ Operation Microwire BUS EEPROM 3-Wire BR93Axx-WM (1K 2K 4K 8K 16K) ●General Description BR93Axx-WM is serial EEPROM of serial 3-line interface method. ●Features „ 3-line communications of chip select, serial clock, serial data


    Original
    PDF BR93Axx-WM BR93Axx-WM 16Kbit EEPROM RA66 marking A46

    Untitled

    Abstract: No abstract text available
    Text: Datasheet Serial EEPROM Series Automotive EEPROM 105℃ Operation Microwire BUS EEPROM 3-Wire BR93Axx-WM (1K 2K 4K 8K 16K) ●General Description BR93Axx-WM is serial EEPROM of serial 3-line interface method. ●Features „ 3-line communications of chip select, serial clock, serial data


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    PDF BR93Axx-WM BR93Axx-WM 16Kbit

    SRA2207SF

    Abstract: No abstract text available
    Text: SRA2207SF PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT IN Features IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and


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    PDF SRA2207SF OT-23F KSD-R5C036-000 SRA2207SF

    SRA2207S

    Abstract: marking code RA7 Transistor sot23
    Text: SRA2207S PNP Silicon Transistor PIN Connection Descriptions • Switching application OUT • Interface circuit and driver circuit application OUT Features IN • With built-in bias resistors • Simplify circuit design • Reduce a quantity of parts and manufacturing process


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    PDF SRA2207S OT-23 KSD-R5C035-000 SRA2207S marking code RA7 Transistor sot23

    v1062

    Abstract: 1414 marking
    Text: LOW PROFILE SERIES SPECIFICATIONS 7 5 0 and 1 0 0 0 VAC V a ris to rs Recognitions To Safety Agency Standards Maida Style Number C ontinuous Nominal Size Minimum Marking Applied Voltage Maximum Ratings Transient Energy 10 X 1 0 0 0 usee R69* R65* R66* S66*


    OCR Scan
    PDF 20psec 20msec) v1062 1414 marking

    Z400-12

    Abstract: Z581-120 D69ZOV301 VARISTOR 595 -PH Z301-80 D6921ZOV151RD09 4500 Z600-06 Z151 Z681-150
    Text: D 6 S 9 M a Part Number Actual Part Marking X i m u m Continuous Rated Voltaae AC RMS DC Volts Volts E R a t i n a R s Rated Slnale Pulse Transient Energy Peak 2ms 10/1000|as 8/20|is Joules Joules Amps I Electrical Varistor Voltage @1mA DC Min Max Volts Volts


    OCR Scan
    PDF D6921ZOV110RA04 D6921ZOV140RA04 D6921ZOV170RA05 D6921ZOV200RA06 D6921ZOV250RA07 D6921ZOV300RA09 D6921ZOV350RA10 D6921ZOV400RA12 D6921ZOV500RA06 D6921ZOV600RA06 Z400-12 Z581-120 D69ZOV301 VARISTOR 595 -PH Z301-80 D6921ZOV151RD09 4500 Z600-06 Z151 Z681-150

    Untitled

    Abstract: No abstract text available
    Text: D 7 8 9 4 S M a x i m u m Part Number Actual Part Marking Continuous Rated Voltaae AC RMS DC Volts Volts R a t i n o s Rated Single Pulse Transient Energy Peak 10/1000ps 8/20ps Joules Amps E E Electrical Varistor Voltage @1mA DC Min Max Volts Volts S Characteristics


    OCR Scan
    PDF 10/1000ps 8/20ps D7894ZOV131 RA210 Z131-210 D7894ZOV141 RA225 Z141-225 D7894ZOV151RA240

    BAS 20 SOT23

    Abstract: RA6100 DL4148 package BAV70 BAV99 DL4148 DL4151 DL4154 DL4448 DL4454
    Text: TAIWAN LITON ELECTRONIC MTE D • fifiBSblS 0004071 217 * 1 1 1 1 kiMce HIGH SPEED SWITCHING DIODES Qffi " T 01> - 0° \ SILICON EPITAXIAL PLANAR SWITCHING DIODES/SOT-23 PACKAGE CHARACTERISTICS @ TA 25°C OPERATING/STORAGE TEMPERATURE -65°C to +175°C Pfl


    OCR Scan
    PDF DIODES/SOT-23 BAV70 BAV99 500mW/MINI DL-35 DL4148 DL4151 DL4154 BAS 20 SOT23 RA6100 DL4148 package DL4448 DL4454

    Untitled

    Abstract: No abstract text available
    Text: Anforderunqsstufe □alum V R R R R I n "l R R R R R R R R R R R R R R R l" uy u II u U II II U II II II U II II I RH RR R U U IlllllllllllU lll | d 0,6 2,54. Überqabesteckzone mating tranfer zone 31 x 2.54 -7 8.7 4 BestückungspLan /contact layout Elastische Einpresszone mit Übergabesteckzone /


    OCR Scan
    PDF 164062/Nr 164062/No IZ54l