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    MARKING PK SOT Search Results

    MARKING PK SOT Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR3DF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 300 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING PK SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking PK

    Abstract: KRA110S marking pk sot
    Text: SEMICONDUCTOR KRA110S MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 PK 1 2 Item Marking Description Device Mark PK KRA110S hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method


    Original     		PDF KRA110S OT-23 marking PK KRA110S marking pk sot

    BAT400D

    Abstract: No abstract text available
    Text: BAT400D SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 3 1 2 Marking Code: PK SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM 40 V VR 40 V VR(RMS)


    Original     		PDF BAT400D OT-23 BAT400D

    BAT400D

    Abstract: MARKING CODE PK pk sot-23 MARKING CODE PK sot-23
    Text: BAT400D SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER 3 2 1 Marking Code: PK SOT-23 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Peak Repetitive Reverse Voltage VRRM 40 V Working Peak Reverse Voltage VRWM 40 V VR 40 V VR(RMS)


    Original     		PDF BAT400D OT-23 BAT400D MARKING CODE PK pk sot-23 MARKING CODE PK sot-23

    Untitled

    Abstract: No abstract text available
    Text: BC856AWT1 Series, BC857BWT1 Series, BC858AWT1 Series Preferred Devices General Purpose Transistors http://onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/SC–70 which is


    Original     		PDF BC856AWT1 BC857BWT1 BC858AWT1 323/SC BC856AWT1 BC856BWT1 BC857BWT1 BC857CWT1 BC858AWT1 BC858BWT1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G CWT1G LBC858AWT1G, BWT1G CWT1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–323/ SC–70 which is designed for low power surface mount


    Original     		PDF LBC856AWT1G, LBC857AWT1G, LBC858AWT1G, BC856 BC857 BC858

    BC847 SOT363

    Abstract: BC847 dual marking 1F BC557 BC557 bc556 marking pk sot
    Text: BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 Dual General Purpose Transistors http://onsemi.com NPN Duals 3 These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is designed for low power surface mount applications.


    Original     		PDF BC846BDW1T1, BC847BDW1T1, BC848CDW1T1 OT-363/SC-88 BC846BDW1T1 BC847BDW1T1 BC848CDW1T1 BC846 BC847 BC848 BC847 SOT363 BC847 dual marking 1F BC557 BC557 bc556 marking pk sot

    BC847 dual marking 1F

    Abstract: No abstract text available
    Text: BC846BDW1T1, BC847BDW1T1 Series, BC848BDW1T1 Series Dual General Purpose Transistors http://onsemi.com NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF BC846BDW1T1, BC847BDW1T1 BC848BDW1T1 363/SC BC846BDW1T1 BC847BDW1T1 BC847CDW1T1 BC848BDW1T1 BC848CDW1T1 BC846 BC847 dual marking 1F

    BC557 bc556

    Abstract: bc557 BC556 BC858CDW1T1
    Text: BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


    Original     		PDF BC856BDW1T1, BC857BDW1T1 BC858BDW1T1 363/SC BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 BC856 BC557 bc556 bc557 BC556 BC858CDW1T1

    BC557

    Abstract: BC557 bc556 bc857 sot363 marking code 04 sot-363 marking 3b sot363 PNP BC558 BC858CDW1T1
    Text: BC856BDW1T1, BC857BDW1T1 Series, BC858BDW1T1 Series Preferred Devices Dual General Purpose Transistors http://onsemi.com PNP Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT−363/SC−88 which is


    Original     		PDF BC856BDW1T1, BC857BDW1T1 BC858BDW1T1 OT-363/SC-88 BC856BDW1T1 BC857BDW1T1 BC857CDW1T1 BC858BDW1T1 BC858CDW1T1 BC856 BC557 BC557 bc556 bc857 sot363 marking code 04 sot-363 marking 3b sot363 PNP BC558 BC858CDW1T1

    SAT MARKING P

    Abstract: LBC848BDW1T1G LBC847CDW1T1G LBC847BDW1T1G BC846 BC847 BC848 dual BC847 LBC847CDW1T1 bc846 SOT363
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC846BDW1T1G


    Original     		PDF 363/SC LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G OT-363 /SC-88 BC846 BC847 SAT MARKING P LBC848BDW1T1G LBC847CDW1T1G LBC847BDW1T1G BC846 BC847 BC848 dual BC847 LBC847CDW1T1 bc846 SOT363

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


    Original     		PDF LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G 363/SCâ OT-363 /SC-88 BC846

    LBC846ADW1T1G

    Abstract: BC847 dual marking 1F BC848 BC846 BC847 BC847 dual 1G1K
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


    Original     		PDF LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G 363/SC OT-363 /SC-88 BC846 LBC846ADW1T1G BC847 dual marking 1F BC848 BC846 BC847 BC847 dual 1G1K

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF LBC85* S-LBC85* 363/SCâ OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G= LBC858CDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G S-LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications.


    Original     		PDF LBC85* S-LBC85* 363/SCâ OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G= LBC858CDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC85* DW1T1G S-LBC85* DW1T1G


    Original     		PDF 363/SCâ LBC85* S-LBC85* AEC-Q101 OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G=

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846ADW1T1G LBC846BDW1T1G NPN Duals LBC847BDW1T1G LBC847CDW1T1G These transistors are designed for general purpose amplifier LBC848BDW1T1G applications. They are housed in the SOT–363/SC–88 which is


    Original     		PDF LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G 363/SCâ LBC848CDW1T1G S-LBC846ADW1T1G S-LBC846BDW1T1G S-LBC847BDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. S-LBC846ADW1T1G


    Original     		PDF 363/SCâ S-LBC846ADW1T1G S-LBC846BDW1T1G S-LBC847BDW1T1G S-LBC847CDW1T1G S-LBC848BDW1T1G S-LBC848CDW1T1G LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G

    operation of BC557 TRANSISTOR

    Abstract: bc557 LBC856BDW1T1 sot-36
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC856*DW1T1 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. • Device Marking:


    Original     		PDF LBC856 363/SC LBC856BDW1T1 LBC857BDW1T1 LBC857CDW1T1 LBC858BDW1T1 LBC858CDW1T1 OT-363 BC856 BC857 operation of BC557 TRANSISTOR bc557 LBC856BDW1T1 sot-36

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with


    Original     		PDF 363/SCâ AEC-Q101 LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G S-LBC846ADW1T1G S-LBC846BDW1T1G

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.


    Original     		PDF 363/SCâ AEC-Q101 LBC85* S-LBC85* OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G=

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC85* 363/SCâ OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G= LBC858CDW1T1G BC856

    LBC856BDW1T1G

    Abstract: LBC857CDW1T1G LBC858BDW1T1G BDW1T1G BC856 BC857 BC858 BC858CDW1T1G BDW1T1
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC85* DW1T1G 6 These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. We declare that the material of product compliance with RoHS requirements.


    Original     		PDF LBC85* 363/SC OT-363 LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G= LBC858CDW1T1G BC856 BC857 LBC856BDW1T1G LBC857CDW1T1G LBC858BDW1T1G BDW1T1G BC856 BC857 BC858 BC858CDW1T1G BDW1T1

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is designed for low power surface mount applications. LBC85* DW1T1G S-LBC85* DW1T1G


    Original     		PDF 363/SCâ LBC85* S-LBC85* AEC-Q101 OT-363 LBC856ADW1T1G= LBC856BDW1T1G= LBC857BDW1T1G= LBC857CDW1T1G= LBC858BDW1T1G=

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. Dual General Purpose Transistors LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G NPN Duals These transistors are designed for general purpose amplifier applications. They are housed in the SOT–363/SC–88 which is


    Original     		PDF LBC846ADW1T1G LBC846BDW1T1G LBC847BDW1T1G LBC847CDW1T1G LBC848BDW1T1G LBC848CDW1T1G 363/SCâ AEC-Q101 S-LBC846ADW1T1G S-LBC846BDW1T1G