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    MARKING NC UPAK Search Results

    MARKING NC UPAK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING NC UPAK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HA17431VP

    Abstract: HA17431PA HA17431PNA HA17431V HA17L431 HA17L431LP HA17L431P HA17L431UP HA17L432UP hitachi Zener Diode marking code
    Text: HA17L431 Series High-Precision Variable Shunt Regulators ADE-204-029B Z 3rd Edition Apr. 1999 Description The HA17L431LP(MPAK-5) / P(TO-92) / UP(UPAK) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in comparison with HA17431V series. They can be


    Original     		PDF HA17L431 ADE-204-029B HA17L431LP HA17431V HA17431VP HA17431PA HA17431PNA HA17L431P HA17L431UP HA17L432UP hitachi Zener Diode marking code

    HA17L431ALP

    Abstract: HA17431VP hitachi mpak year code HA17431PA marking code 4e HA17431V HA17L431 HA17L431A Hitachi DSA00163 HA17L431LP
    Text: HA17L431/HA17L431A Series High-Precision Variable Shunt Regulators ADE-204-029C Z 4th Edition Aug. 2000 Description The HA17L431LP(MPAK-5) / P(TO-92) / UP(UPAK) and the HA17L431ALP(MPAK-5) / AP(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in


    Original     		PDF HA17L431/HA17L431A ADE-204-029C HA17L431LP HA17L431ALP HA17431V HA17431VP hitachi mpak year code HA17431PA marking code 4e HA17L431 HA17L431A Hitachi DSA00163

    marking ALP

    Abstract: HA17431PA marking code 253 marking code 4e marking code SG transistors zener marking hitachi HA17431V HA17L431 HA17L431A HA17L431ALP
    Text: HA17L431/HA17L431A Series High-Precision Variable Shunt Regulators ADE-204-029D Z Rev.4 Dec. 2000 Description The HA17L431LP(MPAK-5) / P(TO-92) / UP(UPAK) and the HA17L431ALP(MPAK-5) / AP(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in


    Original     		PDF HA17L431/HA17L431A ADE-204-029D HA17L431LP HA17L431ALP HA17431V marking ALP HA17431PA marking code 253 marking code 4e marking code SG transistors zener marking hitachi HA17L431 HA17L431A

    RQJ0304DQDQSTL-E

    Abstract: RQJ0304DQDQS
    Text: RQJ0304DQDQS Silicon P Channel MOS FET Power Switching REJ03G1778-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional Power package UPAK Outline RENESAS package code: PLZZ0004CA-A


    Original     		PDF RQJ0304DQDQS REJ03G1778-0100 PLZZ0004CA-A RQJ0304DQDQSTL-E RQJ0304DQDQS

    RQJ0306FQDQS

    Abstract: RQJ0306FQDQSTL-E
    Text: RQJ0306FQDQS Silicon P Channel MOS FET Power Switching REJ03G1780-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package UPAK Outline RENESAS package code: PLZZ0004CA-A


    Original     		PDF RQJ0306FQDQS REJ03G1780-0100 PLZZ0004CA-A RQJ0306FQDQS RQJ0306FQDQSTL-E

    RQJ0305EQDQS

    Abstract: RQJ0305EQDQSTL-E
    Text: RQJ0305EQDQS Silicon P Channel MOS FET Power Switching REJ03G1779-0100 Rev.1.00 Mar 16, 2009 Features • Low gate drive VDSS : –30 V and 2.5 V gate drive • Low drive current • High speed switching • Small traditional power package UPAK Outline RENESAS package code: PLZZ0004CA-A


    Original     		PDF RQJ0305EQDQS REJ03G1779-0100 PLZZ0004CA-A RQJ0305EQDQS RQJ0305EQDQSTL-E

    RQK1001GQDQS

    Abstract: RQK1001GQDQSTL-E RQK-10
    Text: RQK1001GQDQS Silicon N Channel MOS FET Power Switching REJ03G1729-0100 Rev.1.00 Aug 19, 2008 Features • Medium drain to source voltage and Low gate drive VDSS : 100 V and 4 V gate drive • Low drive current • High speed switching • Small traditional package UPAK


    Original     		PDF RQK1001GQDQS REJ03G1729-0100 PLZZ0004CA-A RQK1001GQDQS RQK1001GQDQSTL-E RQK-10

    2SJ317

    Abstract: No abstract text available
    Text: 2SJ317 Silicon P Channel MOSFET Application UPAK High speed power switching Low voltage operation 32 1 Features 4 • Very low on–resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.


    Original     		PDF 2SJ317 2SJ317

    2SJ244

    Abstract: No abstract text available
    Text: 2SJ244 Silicon P Channel MOS FET DIII-L Application UPAK High speed power switching Low voltage operation 3 1 2 Features 4 • Very low on–resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.


    Original     		PDF 2SJ244 2SJ244

    2SK2315

    Abstract: No abstract text available
    Text: 2SK2315 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device - - - can be driven from 3 V source. • Suitable for DC – DC converter, motor drive,


    Original     		PDF 2SK2315 2SK2315

    2SJ278

    Abstract: No abstract text available
    Text: 2SJ278 Silicon P Channel MOS FET Application UPAK High speed power switching 1 32 Features • • • • Low on–resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source • Suitable for Switching regulator, DC – DC


    Original     		PDF 2SJ278 2SJ278

    2SK1772

    Abstract: No abstract text available
    Text: 2SK1772 Silicon N Channel MOS FET Application UPAK High speed power switching Features 3 Low on–resistance High speed switching Low drive current 4 V gate drive device - - - can be driven from 5 V source. • Suitable for DC – DC converter, motor drive,


    Original     		PDF 2SK1772 2SK1772

    Untitled

    Abstract: No abstract text available
    Text: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain


    Original     		PDF 2SJ361

    td 6950

    Abstract: 2SJ361
    Text: 2SJ361 Silicon P-Channel MOS FET Application UPAK High speed power switching 1 Features • • • • 3 Low on–resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source 2 4 2, 4 1. Gate 2. Drain 3. Source 4. Drain


    Original     		PDF 2SJ361 td 6950 2SJ361

    Hitachi DSA002749

    Abstract: No abstract text available
    Text: 2SK1334 Silicon N-Channel MOS FET Nov. 1 1996 Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK


    Original     		PDF 2SK1334 D-85622 Hitachi DSA002749

    Hitachi DSA002779

    Abstract: No abstract text available
    Text: 2SK1334 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK 3 2 1 4


    Original     		PDF 2SK1334 D-85622 Hitachi DSA002779

    Hitachi DSA002713

    Abstract: No abstract text available
    Text: 2SJ361 Silicon P-Channel MOS FET November 1996 Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 3 2 1 4 D 1. Gate 2. Drain


    Original     		PDF 2SJ361 Hitachi DSA002713

    2SJ317

    Abstract: Hitachi 2SJ Hitachi DSA00395
    Text: 2SJ317 Silicon P-Channel MOS FET Application High speed power switching Low voltage operation Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc. Outline UPAK


    Original     		PDF 2SJ317 2SJ317 Hitachi 2SJ Hitachi DSA00395

    2SJ186

    Abstract: DSA003733 Hitachi 2SJ
    Text: 2SJ186 Silicon P-Channel MOS FET Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current Suitable for motor drive, DC-DC converter, power switch and solenoid drive Outline UPAK 3 2 1 4 D 1. Gate


    Original     		PDF 2SJ186 2SJ186 DSA003733 Hitachi 2SJ

    Hitachi 2SJ

    Abstract: No abstract text available
    Text: 2SJ244 - Silicon P Channel MOS FET Application UPAK High speed power switching Low voltage operation 1 Features • Very low on-resistance • High speed switching • Suitable for camera or VTR motor drive circuit, power switch, solenoid drive and etc.


    OCR Scan     		PDF 2SJ244 Hitachi 2SJ

    Untitled

    Abstract: No abstract text available
    Text: 2SK1334 Silicon N-Channel MOS FET HITACHI Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current N o secondary Breakdown Suitable for switching regulator and DC-DC converter Outline UPAK


    OCR Scan     		PDF 2SK1334

    Untitled

    Abstract: No abstract text available
    Text: 2SJ361 Silicon P-Channel MOS FET HITACHI Application High speed power switching Features • • • • Low on-resistance High speed switching Low drive current 2.5 V gate drive device can be driven from 3 V source Outline UPAK 1. 2. 3. 4. Gate Drain Source


    OCR Scan     		PDF 2SJ361 2SJ361 5x20x0

    J361 IC

    Abstract: No abstract text available
    Text: 2SJ361 Silicon P-Channel MOS FET HITACHI November 1996 Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 2.5 V gate drive device can be driven from 3 V source Outline UPAK 2 U ^ ?D G o—h-rwJ


    OCR Scan     		PDF 2SJ361 J361 IC

    Untitled

    Abstract: No abstract text available
    Text: HA17L431 Series High-Precision Variable Shunt Regulators HITACHI ADE-204-029A Z 2nd Edition Sept. 1, 1998 Description The HA17L431LP(MPAK-5) / P(TO-92) are temperature-compensated variable shunt regulators. These ICs can operate at about half voltage in comparison with HA17431V series. They can be replaced for


    OCR Scan     		PDF HA17L431 ADE-204-029A HA17L431LP HA17431V HA17431 HA17431VLP HA17L431LP HA17431FPA