marking N11 diode
Abstract: sot-363 MARKING n10 diode IMN10 SOT-363 marking n10 sot-363 MARKING n11 diode IMN11 EMP11 UMN1N FMN1
Text: Diodes EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N Switching diode EMN11 / EMP11 / FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N zExternal dimensions Units : mm zFeatures 1) A wide variety of configurations are available. (EMD6, UMD5,
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EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11
UMN1N/UMP1N/UMN11N/UMP11N
EMN11
EMP11
IMN10
IMN11
IMP11
UMN11N
UMP11N
100ns
marking N11 diode
sot-363 MARKING n10 diode
SOT-363 marking n10
sot-363 MARKING n11 diode
UMN1N
FMN1
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sot-363 MARKING n10 diode
Abstract: marking N11 diode SOT-363 marking n10 SOT marking P11 SOT-363 marking n11 EMP11 IMN11 TYPE00 marking N10 IMN10
Text: Diodes EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N Switching diode EMN11 / EMP11 / FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N !External dimensions Unit : mm !Features 1) A wide variety of configurations are available. (EMD6, UMD5,
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EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11
UMN1N/UMP1N/UMN11N/UMP11N
EMN11
EMP11
IMN10
IMN11
IMP11
UMN11N
UMP11N
100ns
sot-363 MARKING n10 diode
marking N11 diode
SOT-363 marking n10
SOT marking P11
SOT-363 marking n11
TYPE00
marking N10
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sot-363 MARKING n10 diode
Abstract: SOT-363 marking n10 IMN11 EMP11 UMN1N FMN1
Text: Diodes EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N Switching diode EMN11 / EMP11 / FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N !External dimensions Unit : mm !Features 1) A wide variety of configurations are available. (EMD6, UMD5,
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EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11
UMN1N/UMP1N/UMN11N/UMP11N
EMN11
EMP11
IMN10
IMN11
IMP11
UMN11N
UMP11N
sot-363 MARKING n10 diode
SOT-363 marking n10
UMN1N
FMN1
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sot-363 MARKING n10 diode
Abstract: SOT-363 marking n10 EMP11 IMN11 marking N11 diode SOT marking P11 EMN11 IMN10 IMP11 UMN11N
Text: Diodes EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11 UMN1N/UMP1N/UMN11N/UMP11N Switching diode EMN11 / EMP11 / FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N zExternal dimensions Unit : mm UMN1N / UMP1N 5 0.15±0.05 +0.2 1 2 2.8±0.2 ∗
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EMN11/EMP11/FMN1/FMP1/IMN10/IMN11/IMP11
UMN1N/UMP1N/UMN11N/UMP11N
EMN11
EMP11
IMN10
IMN11
IMP11
UMN11N
UMP11N
SC-88A
sot-363 MARKING n10 diode
SOT-363 marking n10
marking N11 diode
SOT marking P11
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TOKO VARIABLE INDUCTOR
Abstract: diode marking code 2T
Text: r & T O K TK11816, TK11817, TK11818, TK11819 O DC-DC CONVERTER FEATURES APPLICATIONS • Miniature Package SOT-23L-6 ■ Variable Capacitance and PIN Diode Bias ■ Few External Components ■ Portable Instrumentation ■ Internal Rectifier and Regulator
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TK11816,
TK11817,
TK11818,
TK11819
OT-23L-6)
TK1181
TOKO VARIABLE INDUCTOR
diode marking code 2T
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sot-363 MARKING n10 diode
Abstract: IMN11 SOT-363 marking n10 transistor marking N1 IMN10 IMP11 UMN11N UMP11N marking N11 diode UMN1N
Text: FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N zExternal dimensions Units : mm FMN1 / FMP1 UMN1N / UMP1N +0.1 −0.06 (All leads have the same dimensions.)
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IMN10
IMN11
IMP11
UMN11N
UMP11N
IMP11
sot-363 MARKING n10 diode
SOT-363 marking n10
transistor marking N1
UMP11N
marking N11 diode
UMN1N
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SOT-363 marking n10
Abstract: sot-363 MARKING n10 diode IMN11 IMN10 IMP11 UMN11N UMP11N sot363 p11 N10 SOT363 UMN1N
Text: FMN1 / FMP1 / IMN10 / IMN11 / IMP11 / UMN1N / UMP1N / UMN11N / UMP11N Diodes Switching diode FMN1 / FMP1 / IMN10 / IMN11 / IMP11 UMN1N / UMP1N / UMN11N / UMP11N !External dimensions Units : mm FMN1 / FMP1 UMN1N / UMP1N 0.15 +0.1 −0.06 (All leads have the same dimensions.)
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IMN10
IMN11
IMP11
UMN11N
UMP11N
IMP11
SOT-363 marking n10
sot-363 MARKING n10 diode
UMP11N
sot363 p11
N10 SOT363
UMN1N
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MARKING N20 SOT-343
Abstract: ISS181 Switching Diode SOT23 Marking 3D DIODE sot-23 Marking 3D MARKING 3B SOT23-6 marking RA4 sot23 SC74A SC-88A footprint Switching Diode SC-59 Marking 3D ISS181-L
Text: S W I T C H I N G D I O D E A R R AY S HIGH SPEED SWITCHING DIODE ARRAYS 1/3A 1/3B 1 2 1 1/3C 2 3 1 2 3 2/4 2 3 4 1 2 2 1 5 3 1 2 1 2 4/6A 3 4/6B 5 4 5 6 4 5 6 4 5 6 1 3 2 1 3 2 1 3 2 1 The latest comprehensive data to fully support these parts is readily available.
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BAS16
BAV70
BAV99
BAV99U
BAW56
DA121
DA114
DAN212K
DAN222
DAN202U
MARKING N20 SOT-343
ISS181
Switching Diode SOT23 Marking 3D
DIODE sot-23 Marking 3D
MARKING 3B SOT23-6
marking RA4 sot23
SC74A
SC-88A footprint
Switching Diode SC-59 Marking 3D
ISS181-L
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SOT23 MARKING N02
Abstract: DDTC144VCA
Text: DDTC R1≠R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Part Number DDTC113ZCA DDTC123YCA DDTC123JCA DDTC143XCA DDTC143FCA DDTC143ZCA DDTC114YCA DDTC114WCA DDTC124XCA DDTC144VCA DDTC144WCA Features and Benefits R1 (NOM)
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DDTC113ZCA
DDTC123YCA
DDTC123JCA
DDTC143XCA
DDTC143FCA
DDTC143ZCA
DDTC114YCA
DDTC114WCA
DDTC124XCA
DDTC144VCA
SOT23 MARKING N02
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rf sealer circuit
Abstract: gp2s27t GP2S27T2
Text: PREPARED BY: DATE SHARP ELECTRONIC COMPONENTS CROUP DATE APPROVED BY : FILEN I ISSUE PAGE REPRESENTATIVE DIVISION SHARP CORPORATION SPECIFICATION □ PHOTOVOLTAICS DIV. BOPTO-ELECTRONIC DEVICES DIV □ ELECTRONIC COMPONENTS DIV. S ' DEVICE SPECIFICATION FOR
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GP2S27T
GP2S27T2
GP2S27T3
GP2S27T5
GP2S27T
GP2S27T6
rf sealer circuit
GP2S27T2
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DDTC144VCA
Abstract: No abstract text available
Text: DDTC R1≠R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features and Benefits Product Summary Part Number DDTC113ZCA DDTC123YCA DDTC123JCA DDTC143XCA DDTC143FCA DDTC143ZCA DDTC114YCA DDTC114WCA DDTC124XCA DDTC144VCA DDTC144WCA R1 (NOM)
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DDTC113ZCA
DDTC123YCA
DDTC123JCA
DDTC143XCA
DDTC143FCA
DDTC143ZCA
DDTC114YCA
DDTC114WCA
DDTC124XCA
DDTC144VCA
DDTC144VCA
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SOT23 MARKING N02
Abstract: DDTC144VCA
Text: DDTC R1≠R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Product Summary Part Number DDTC113ZCA DDTC123YCA DDTC123JCA DDTC143XCA DDTC143FCA DDTC143ZCA DDTC114YCA DDTC114WCA DDTC124XCA DDTC144VCA DDTC144WCA Features and Benefits R1 (NOM)
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DDTC113ZCA
DDTC123YCA
DDTC123JCA
DDTC143XCA
DDTC143FCA
DDTC143ZCA
DDTC114YCA
DDTC114WCA
DDTC124XCA
DDTC144VCA
SOT23 MARKING N02
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Untitled
Abstract: No abstract text available
Text: KSM038AN06A0 / KSMI038AN06A0 TO-220AB Features TO-262AB D = 80A • r DS ON = 3.5mΩ (Typ.), V GS = 10V, I • Qg(tot) = 95nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse) • Qualified to AEC Q101
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KSM038AN06A0
KSMI038AN06A0
O-220AB
O-262AB
24e-3
08e-3
28e-2
FDP035AN06A0T
45e-3
65e-2
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DDTC144VCA
Abstract: No abstract text available
Text: DDTC R1R2 SERIES CA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data • Epitaxial Planar Die Construction Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1R2 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
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AEC-Q101
DDTC113ZCA
DDTC123YCA
DDTC123JCA
DDTC143XCA
DDTC143FCA
DDTC143ZCA
DDTC114YCA
DDTC114WCA
DDTC124XCA
DDTC144VCA
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FDN363N
Abstract: N6 marking diode marking n9
Text: Preliminary FDN363N N-Channel PowerTrench MOSFET 100V, 1A, 240mΩ Features Applications • r DS ON = 200mΩ (Typ.), VGS = 10V, ID = 1A • DC/DC converters • Qg(tot) = 4nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse)
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FDN363N
250oC/W
FDN363N
N6 marking diode
marking n9
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m079
Abstract: HUFA75433S3S HUFA75433S3ST Marking N8 KP26
Text: HUFA75433S3S N-Channel UltraFET MOSFETs 60V, 64A, 16mΩ General Description Applications These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves very low on-resistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy in the avalanche mode and the diode exhibits very low reverse
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HUFA75433S3S
m079
HUFA75433S3S
HUFA75433S3ST
Marking N8
KP26
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Untitled
Abstract: No abstract text available
Text: SRDA3.3-6 SEMTECH Preliminary - April 1, 1998 RailClamp Low Capacitance TVS Diode Array & SRDA05-6 TEL805-498-2111 FAX:805-498-3804 WEB:http://www.semtech.com DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to protect high speed data intertaces. The SRDA series
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SRDA05-6
TEL805-498-2111
12x16
CA91320
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HUFA76404DK8T
Abstract: NL103
Text: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode
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HUFA76404DK8T
HUFA76404DK8T
NL103
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CS1009
Abstract: CS1009GD8 CS1009GDR8 CS1009GZ3 LM136 LM136Z LT1009 LT1009CZ
Text: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature
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CS1009
CS1009
CS1009GZ
LT1009CZ
LM136Z
r14525
CS1009/D
CS1009GD8
CS1009GDR8
CS1009GZ3
LM136
LT1009
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LT1009CZ
Abstract: LM136 LT1009 NCV1009 NCV1009D NCV1009DR2 NCV1009Z N3 smd 2492 smd resistor
Text: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on-chip trimming which minimizes voltage tolerance and
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NCV1009
NCV1009
NCV1009Z
LT1009CZ
LM136Z-2
1009D
NCV1009/D
LM136
LT1009
NCV1009D
NCV1009DR2
NCV1009Z
N3 smd
2492 smd resistor
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LM136
Abstract: LM136Z LT1009 LT1009CZ NCV1009 NCV1009D NCV1009DR2 NCV1009Z
Text: NCV1009 2.5 Volt Reference The NCV1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on−chip trimming which minimizes voltage tolerance and
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NCV1009
NCV1009
NCV1009Z
LT1009CZ
LM136Z-2
1009D
NCV1009/D
LM136
LM136Z
LT1009
NCV1009D
NCV1009DR2
NCV1009Z
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CS1009GZ3
Abstract: CS1009 CS1009GD8 CS1009GDR8 LM136 LM136Z LT1009 LT1009CZ Zener diode smd marking N1
Text: CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature
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CS1009
CS1009
CS1009GZ
LT1009CZ
LM136Z
r14525
CS1009/D
CS1009GZ3
CS1009GD8
CS1009GDR8
LM136
LT1009
Zener diode smd marking N1
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Untitled
Abstract: No abstract text available
Text: Back CS1009 2.5 Volt Reference The CS1009 is a precision trimmed 2.5 V ±5.0 mV shunt regulator diode. The low dynamic impedance and wide operating current range enhances its versatility. The tight reference tolerance is achieved by on–chip trimming which minimizes voltage tolerance and temperature
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CS1009
CS1009GZ
LT1009CZ
LM136Z
LT1009
LM136
r14525
CS1009/D
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13E1
Abstract: No abstract text available
Text: HUFA76404DK8T N-Channel MOSFET 62V, 3.2A, 132mΩ Features Applications • rDS ON = 110mΩ (Typ.), VGS = 5V, ID = 3.2A • Motor / Body Load Control • Qg(tot) = 3.6nC (Typ.), VGS = 5V • ABS Systems • Low Miller Charge • Powertrain Management • Low QRR Body Diode
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HUFA76404DK8T
13E1
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