n20 n21 fet
Abstract: 53E1 FDG6318PZ SC-70-6 SC70-6 dual transistors sc-70-6 N2 SC70 SC-70-6 zener 15v 27E4 55E-4
Text: FDG6318PZ Dual P-Channel, Digital FET General Description Features These dual P-Channel logic level enhancement mode MOSFET are produced using Fairchild Semiconductor’s especially tailored to minimize on-state resistance. This device has been designed especially for bipolar digital
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FDG6318PZ
1200m
SC-70-6
n20 n21 fet
53E1
FDG6318PZ
SC70-6
dual transistors sc-70-6
N2 SC70
SC-70-6 zener 15v
27E4
55E-4
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marking n10 fet
Abstract: NTD12N10
Text: NTD12N10 Preferred Device Power MOSFET 12 Amps, 100 Volts N−Channel Enhancement−Mode DPAK Features • Pb−Free Package is Available • Source−to−Drain Diode Recovery Time Comparable to a • • • http://onsemi.com Discrete Fast Recovery Diode
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NTD12N10
marking n10 fet
NTD12N10
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tc150e3
Abstract: KP235 40V 60A MOSFET
Text: FDH038AN08A1 N-Channel PowerTrench MOSFET 75 V, 80 A, 3.8 m Ω Features Applications • R DS ON = 3.5 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 125 nC (Typ.), VGS = 10 V • Battery Protection Circuit
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FDH038AN08A1
FDH038AN08A1
O-247
158oC,
tc150e3
KP235
40V 60A MOSFET
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FDP3672
Abstract: diode marking 41a on semiconductor marking n6
Text: FDP3672 N-Channel PowerTrench MOSFET 105V, 41A, 33mΩ Features Applications • r DS ON = 25mΩ (Typ.), VGS = 10V, ID = 41A • DC/DC converters and Off-Line UPS • Qg(tot) = 28nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs • Low Miller Charge
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FDP3672
O-220AB
FDP3672
diode marking 41a on semiconductor
marking n6
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TC143E
Abstract: T 105 micro 25E3
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ V GS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
FDP3672
O-220
TC143E
T 105 micro 25E3
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75E2
Abstract: fairchild s1a diode N8 Diode
Text: FDH038AN08A1 N-Channel PowerTrench MOSFET 75V, 80A, 3.8mΩ Features Applications • r DS ON = 3.5mΩ (Typ.), V GS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 125nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDH038AN08A1
125nC
O-247
158oC,
30oC/W)
FDH038AN08A1
75E2
fairchild s1a diode
N8 Diode
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FDP047AN08A0
Abstract: FDH047AN08A0 fairchild s1a diode fdp047an
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
O-220AB
O-262AB
O-247
FDH047AN08A0
fairchild s1a diode
fdp047an
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Untitled
Abstract: No abstract text available
Text: FDP3682 N-Channel PowerTrench MOSFET 100 V, 32 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 32 A • Consumer Appliances • QG(tot) = 18.5 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3682
O-220
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Untitled
Abstract: No abstract text available
Text: FDP16AN08A0 N-Channel PowerTrench MOSFET 75 V, 58 A, 16 mΩ Features Applications • RDS on = 13 mΩ ( Typ.) @ VGS = 10 V, ID = 58 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Battery Protection Circuit
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FDP16AN08A0
O-220
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Untitled
Abstract: No abstract text available
Text: FDP2572 N-Channel PowerTrench MOSFET 150 V, 29 A, 54 mΩ Features Applications • RDS on = 45 mΩ ( Typ.) @ VGS = 10 V, ID = 9 A • Consumer Appliances • QG(tot) = 26 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP2572
O-220
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Untitled
Abstract: No abstract text available
Text: FDP070AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 7 mΩ Features Applications • RDS on = 6.1 mΩ (Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 51 nC (Typ.) @ VGS = 10 V • Battery Protection Circuit
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FDP070AN06A0
O-220
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Untitled
Abstract: No abstract text available
Text: FDP3672 N-Channel PowerTrench MOSFET 105 V, 41 A, 33 mΩ Features Applications • RDS on = 25 mΩ ( Typ.) @ VGS = 10 V, ID = 41 A • Consumer Appliances • QG(tot) = 28 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP3672
O-220
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Untitled
Abstract: No abstract text available
Text: FDP42AN15A0 N-Channel PowerTrench MOSFET 150 V, 35 A, 42 mΩ Features Applications • RDS on = 36 mΩ ( Typ.) @ VGS = 10 V, ID = 12 A • Consumer Appliances • QG(tot) = 33 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge
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FDP42AN15A0
O-220
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Untitled
Abstract: No abstract text available
Text: FDP047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.7 mΩ Features Applications • R DS ON = 4.0 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 92 nC (Typ.), VGS = 10V • Battery Protection Circuit
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FDP047AN08A0
FDH047AN08A0
O-220
O-247
FDP047AN08A0
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67E-3
Abstract: fdp038an06
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.8 m Ω Features Applications • RDS on = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 96 nC ( Typ.) @ V GS = 10 V
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FDP038AN06A0
FDI038AN06A0
FDI038AN06A0
O-220
O-262)
67E-3
fdp038an06
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Untitled
Abstract: No abstract text available
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60 V, 80 A, 3.8 mΩ Features Applications • RDS on = 3.5 mΩ ( Typ.) @ VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • QG(tot) = 96 nC ( Typ.) @ VGS = 10 V
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FDP038AN06A0
FDI038AN06A0
O-220
FDP038AN06A0
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Untitled
Abstract: No abstract text available
Text: FDP2552 N-Channel PowerTrench MOSFET 150 V, 37 A, 36 mΩ Features Applications • RDS on = 32 mΩ ( Typ.) @ VGS = 10 V, ID = 16 A • Consumer Appliances • QG(tot) = 39 nC ( Typ.) @ VGS = 10 V • Synchronous Rectification • Low Miller Charge • Battery Protection Circuit
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FDP2552
O-220
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Untitled
Abstract: No abstract text available
Text: FDD16AN08A0 N-Channel UltraFET Trench MOSFET 75V, 50A, 16mΩ Features Applications • r DS ON = 13mΩ (Typ.), VGS = 10V, ID = 50A • DC-DC converters and Off-line UPS • Qg(tot) = 31nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDD16AN08A0
O-252AA
52oC/W)
FDD16AN08A0
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FDP047AN
Abstract: No abstract text available
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75 V, 80 A, 4.7 m Ω Features Applications • R DS ON = 4.0 m Ω (Typ.), VGS = 10 V, ID = 80 A • Synchronous Rectification for ATX / Server / Telecom PSU • Qg(tot) = 92 nC (Typ.), VGS = 10V
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
FDH047AN08A0
O-220AB
O-262AB
O-247
FDP047AN
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TC11E
Abstract: 19E-9 FDP8870 RS21E
Text: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8870
O-220AB
TC11E
19E-9
RS21E
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FDP047AN
Abstract: FDH047AN08A0 FDI047AN08A0 FDP047AN08A0 FDH047AN08 FDH047AN FDP047
Text: FDP047AN08A0 / FDI047AN08A0 / FDH047AN08A0 N-Channel PowerTrench MOSFET 75V, 80A, 4.7mΩ Features Applications • rDS ON = 4.0mΩ (Typ.), VGS = 10V, ID = 80A • DC-DC converters and Off-line UPS • Qg(tot) = 92nC (Typ.), VGS = 10V • Distributed Power Architectures and VRMs
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FDP047AN08A0
FDI047AN08A0
FDH047AN08A0
144oC,
FDH047AN08A0
FDP047AN
FDH047AN08
FDH047AN
FDP047
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Untitled
Abstract: No abstract text available
Text: FDP8870_F085 N-Channel PowerTrench MOSFET 30V, 156A, 4.1mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8870
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TC124E
Abstract: FDP8896
Text: FDP8896_F085 N-Channel PowerTrench MOSFET 30V, 92A, 5.9mΩ General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low
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FDP8896
TC124E
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67E-3
Abstract: FDI038AN06A0 FDP035AN06A0T FDP038AN06A0 DIODE N20 fdp038an06a0t
Text: FDP038AN06A0 / FDI038AN06A0 N-Channel PowerTrench MOSFET 60V, 80A, 3.8mΩ Features Applications • rDS ON = 3.5mΩ (Typ.), VGS = 10V, ID = 80A • Motor / Body Load Control • Qg(tot) = 95nC (Typ.), VGS = 10V • ABS Systems • Low Miller Charge • Powertrain Management
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FDP038AN06A0
FDI038AN06A0
O-220AB
O-262AB
67E-3
FDI038AN06A0
FDP035AN06A0T
DIODE N20
fdp038an06a0t
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