BUF410A
Abstract: JESD97
Text: BUF410A High voltage fast-switching NPN power transistor Features • High voltage capability ■ Very high switching speed ■ Minimum lot-to-lot spread for reliable operation ■ Low base-drive requirements Applications 3 2 ■ Switch mode power supplies
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BUF410A
O-247
BUF410A
JESD97
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ignition coil bu941
Abstract: JESD97 BU941 BU941P 0015923C High voltage ignition coil driver bu941 ignition for bipolar junction diode used for
Text: BU941 BU941P High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Integrated antiparallel collector-emitter diode Applications ■ 1 3 2 High ruggedness electronic ignitions
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BU941
BU941P
O-247
BU94nts,
JESD97.
BU941,
ignition coil bu941
JESD97
BU941
BU941P
0015923C
High voltage ignition coil driver
bu941 ignition
for bipolar junction diode used for
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BU931
Abstract: BU931P BU931T JESD97 W313 High voltage ignition coil driver NPN POWER DARLINGTON TRANSISTORS
Text: BU931 BU931P, BU931T High voltage ignition coil driver NPN power Darlington transistors Features • Very rugged Bipolar technology ■ High operating junction temperature ■ Wide range of packages Applications ■ 1 2 2 1 TO-247 Description The devices are bipolar Darlington transistors
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BU931
BU931P,
BU931T
O-247
O-220
JESD97.
BU931
BU931P
BU931T
JESD97
W313
High voltage ignition coil driver
NPN POWER DARLINGTON TRANSISTORS
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Untitled
Abstract: No abstract text available
Text: BUF410A High voltage fast-switching NPN power transistor Features • High voltage capability ■ Very high switching speed ■ Minimum lot-to-lot spread for reliable operation ■ Low base-drive requirements u d o Applications 3 ■ Switch mode power supplies
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BUF410A
BUF410A
O-247
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High voltage ignition coil driver
Abstract: Part Marking TO-220 STMicroelectronics power transistor 901t transistor marking MH ST901T Marking STMicroelectronics to220 901T electronic ignition ignition coil npn power darlington
Text: ST901T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER TRANSISTOR n n n n HIGH VOLTAGE SPECIAL DARLINGTON STRUCTURE Figure 1: Package VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATION JUNCTION TEMPERATURE HIGH DC CURRENT GAIN 3 1 APPLICATIONS n 2 TO-220 HIGH RUGGEDNESS ELECTRONIC
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ST901T
O-220
ST901T
O-220
High voltage ignition coil driver
Part Marking TO-220 STMicroelectronics
power transistor 901t
transistor marking MH
Marking STMicroelectronics to220
901T
electronic ignition
ignition coil npn power darlington
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transistor marking MH
Abstract: transistor buv27 ic marking code pk transistor marking T2 buv27 Specific Device Code MH
Text: BUV27 NPN Silicon Power Transistor Designed for use in switching regulators and motor control. Features • Low Collection Emitter Saturation Voltage • Fast Switching Speed http://onsemi.com POWER TRANSISTOR 12 AMPERES 120 VOLTS 70 WATTS MAXIMUM RATINGS
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BUV27
O-220AB
transistor marking MH
transistor buv27
ic marking code pk
transistor marking T2
Specific Device Code MH
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Untitled
Abstract: No abstract text available
Text: BC846BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS COMPLIMENTARY This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose transistors. This device is ideal for portable applications where board space is at a premium. VOLTAGE
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BC846BPN
100mA
2002/95/EC
IEC61249
OT-363,
2011-REV
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BC846BPN
Abstract: No abstract text available
Text: BC846BPN DUAL SURFACE MOUNT NPN/PNP TRANSISTORS COMPLIMENTARY This device contains two electrically-isolated complimentary pair (NPN and PNP)general-purpose transistors. This device is ideal for portable applications where board space is at a premium. 65 Volts
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BC846BPN
100mA
2002/95/EC
OT-363,
MIL-STD-750,
2011-REV
BC846BPN
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diode cc 3053
Abstract: 2n3772 EQUIVALENT 2N3771 1N1186A 2N3772 2n3771 equivalent 2N3772 JAN
Text: INCH-POUND The documentation and process conversion measures necessary to comply with this revision shall be completed by 15 January 2009. MIL-PRF-19500/413F 15 October 2008 SUPERSEDING MIL-PRF-19500/413E 27 June 2007 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER,
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MIL-PRF-19500/413F
MIL-PRF-19500/413E
2N3771
2N3772,
MIL-PRF-19500.
diode cc 3053
2n3772 EQUIVALENT
1N1186A
2N3772
2n3771 equivalent
2N3772 JAN
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diode cc 3053
Abstract: cc 3053 2n3771 equivalent cc 3053 diode 2N3771 equivalent transistor 2n3772 EQUIVALENT 2n3771 2N3772 K 3053 TRANSISTOR MIL-PRF19500
Text: This documentation process conversion measures necessary to comply with this revision shall be completed by 30 September 1999 INCH-POUND MIL-PRF-19500/413C 30 July 1999 SUPERSEDING MIL-S-19500/413B 24 March 1993 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER
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MIL-PRF-19500/413C
MIL-S-19500/413B
2N3771
2N3772,
MIL-PRF-19500.
diode cc 3053
cc 3053
2n3771 equivalent
cc 3053 diode
2N3771 equivalent transistor
2n3772 EQUIVALENT
2N3772
K 3053 TRANSISTOR
MIL-PRF19500
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1N5761
Abstract: npn BUL45G bul45a
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
BUL45/D
1N5761
npn BUL45G
bul45a
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bul45g
Abstract: No abstract text available
Text: BUL45G NPN Silicon Power Transistor High Voltage SWITCHMODE Series Designed for use in electronic ballast light ballast and in SWITCHMODE Power supplies up to 50 W. Features • Improved Efficiency Due to: Low Base Drive Requirements (High and Flat DC Current Gain hFE)
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BUL45G
O-220AB
21A-09
BUL45/D
bul45g
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MJE18002G
Abstract: MJE18002 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.
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MJE18002G
MJE18002G
O-220
O-220AB
21A-09
MJE18002/D
MJE18002
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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Untitled
Abstract: No abstract text available
Text: BUH50G SWITCHMODE NPN Silicon Planar Power Transistor The BUH50G has an application specific state−of−art die designed for use in 50 W HALOGEN electronic transformers and SWITCHMODE applications. http://onsemi.com Features POWER TRANSISTOR 4 AMPERES 800 VOLTS, 50 WATTS
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BUH50G
BUH50/D
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MJE18002
Abstract: MJE18002G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: MJE18002 Preferred Device SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.
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MJE18002
MJE18002
O-220
MJE18002/D
MJE18002G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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BUL44
Abstract: BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: BUL44 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44 have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features
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BUL44
BUL44
BUL44/D
BUL44G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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Untitled
Abstract: No abstract text available
Text: BUH50G SWITCHMODE NPN Silicon Planar Power Transistor The BUH50G has an application specific state−of−art die designed for use in 50 W HALOGEN electronic transformers and SWITCHMODE applications. Features POWER TRANSISTOR 4 AMPERES 800 VOLTS, 50 WATTS
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BUH50G
BUH50/D
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bul147
Abstract: No abstract text available
Text: BUL147 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147 have an applications specific state−of−the−art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment.
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BUL147
O-220
BUL147/D
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Untitled
Abstract: No abstract text available
Text: BUL44G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features
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BUL44G
BUL44G
220AB
BUL44/D
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Untitled
Abstract: No abstract text available
Text: BUH50G SWITCHMODE NPN Silicon Planar Power Transistor The BUH50G has an application specific state−of−art die designed for use in 50 W HALOGEN electronic transformers and SWITCHMODE applications. http://onsemi.com Features • Improved Efficiency Due to Low Base Drive Requirements:
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BUH50G
BUH50G
BUH50/D
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Untitled
Abstract: No abstract text available
Text: MJE18002G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE18002G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts.
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MJE18002G
MJE18002G
220AB
MJE18002/D
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BUL44
Abstract: BUL44G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: BUL44G SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL44G have an applications specific state−of−the−art die designed for use in 220 V line operated Switchmode Power supplies and electronic light ballasts. Features
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BUL44G
BUL44G
O-220AB
21A-09
BUL44/D
BUL44
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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Untitled
Abstract: No abstract text available
Text: BUL147 SWITCHMODEt NPN Bipolar Power Transistor For Switching Power Supply Applications The BUL147 have an applications specific state−of−the−art die designed for use in electric fluorescent lamp ballasts to 180 Watts and in Switchmode Power supplies for all types of electronic equipment.
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BUL147
BUL147
BUL147/D
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tfk 19
Abstract: TFK 102 TFK 19 001 TFK 105 5070d TFK 282 TFK diode tfk 3b diode s .* tfk telefunken ta 750
Text: TELEFUNKEN ELECTRONIC 17E D • TTltUiPdDMKlMelectronic 6 1 2 0 0 % DODTbbS TFK 5070 D Crwtivt Tfchnolog* Preliminary specifications NPN Silicon Darlington Power Transistor r - 3 3 - 3 r Applications: • Motor-control 380 V-mains • UPS (Uninterruptible power supplies)
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T0126
15A3DIN
tfk 19
TFK 102
TFK 19 001
TFK 105
5070d
TFK 282
TFK diode
tfk 3b
diode s .* tfk
telefunken ta 750
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