MV209 diode
Abstract: mv209 DIODE M4A marking M4A general semiconductor MARKING C25 SOT23 M4A sot23
Text: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid–state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies
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MMBV109LT1
MV209
MMBV109LT1,
MV209
MV209 diode
DIODE M4A
marking M4A general semiconductor
MARKING C25 SOT23
M4A sot23
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PDF
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DIODE M4A
Abstract: j4a diode C25F
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MBV109T1 MMBV109LT1* MV209* Silicon Epicap Diodes D esign ed for general frequency control and tuning applications; providing solid-state reliability in replacement of mechnaical tuning methods. * Motorola Preferrod Devices
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OCR Scan
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MBV109T1
MMBV109LT1*
MV209*
SC-70/SOT-323
OT-23
DIODE M4A
j4a diode
C25F
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PDF
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Untitled
Abstract: No abstract text available
Text: ON Semiconductor Power TMOS¨ MOSFETs and Diodes Power TMOS¨ MOSFETs Continued TO-247 Isolated Mounting Hole TMOS V (Continued) TO-247 Ñ N-Channel TMOS V ÑTO-220AB Mfr.Õs Type4 V(BR)DSS (V) Min. RDS(on) (½) Max. 1000 800 600 500 500 400 400 250 200
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O-247
O-247
O-220AB
MTW10N100E
MTP3055V
MTW7N80E
MTP15N06V
MTW8N60E
MTP36N06V
MTW14N50E
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PDF
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DIODE M4A
Abstract: MV209 MMBV109LT1 "Variable Capacitance Diodes" MV209 diode MV209 equivalent MMBV109LT1G MMBV109LT3 MMBV109LT3G MV209G
Text: MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies
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MMBV109LT1,
MV209
MMBV109LT1
MMBV109LT1/D
DIODE M4A
MV209
MMBV109LT1
"Variable Capacitance Diodes"
MV209 diode
MV209 equivalent
MMBV109LT1G
MMBV109LT3
MMBV109LT3G
MV209G
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PDF
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M4A sot23
Abstract: DIODE M4A MV209 MV209 diode marking code m4a
Text: MMBV109LT1, MV209 Preferred Devices Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. Features • • • • High Q with Guaranteed Minimum Values at VHF Frequencies
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Original
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MMBV109LT1,
MV209
MMBV109LT1
MMBV109LT1/D
M4A sot23
DIODE M4A
MV209
MV209 diode
marking code m4a
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PDF
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DIODE M4A
Abstract: M4A sot23
Text: ON Semiconductort MMBV109LT1, MV209 Silicon Epicap Diodes Designed for general frequency control and tuning applications; providing solid−state reliability in replacement of mechanical tuning methods. • High Q with Guaranteed Minimum Values at VHF Frequencies
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Original
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MMBV109LT1
MV209
MMBV109LT1,
MV209
DIODE M4A
M4A sot23
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT4401 Features • • x • x • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation
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Original
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MMBT4401
OT-23
350mWatts
600mA
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT4401 Features • • x • x • Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation
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Original
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MMBT4401
OT-23
350mWatts
600mA
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT4401 Features • • • x • x • Halogen free available upon request by adding suffix "-HF" Surface Mount SOT-23 Package
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Original
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MMBT4401
OT-23
350mWatts
600mA
OT-23
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PDF
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MA793
Abstract: MA3Z792 MA3Z793 MA792
Text: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection) • IF(AV) = 100 mA rectification is possible
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MA3Z793
MA793)
MA3Z792
MA792)
SC-79
MA793
MA3Z792
MA3Z793
MA792
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package (series
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MA3X791
MA791)
MA3X786
MA786)
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PDF
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DIODE M4A
Abstract: MA791 MA3X786 MA3X791 MA786
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2 2 1 (0.65) • Two MA3X786 (MA786) is contained in one package (double
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MA3X791
MA791)
MA3X786
MA786)
DIODE M4A
MA791
MA3X786
MA3X791
MA786
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PDF
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Untitled
Abstract: No abstract text available
Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMBT4401 Features • • • x • x • • • Halogen free available upon request by adding suffix "-HF"
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Original
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MMBT4401
OT-23
350mWatts
600mA
OT-23
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection)
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Original
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2002/95/EC)
MA3Z793
MA793)
MA3Z792
MA792)
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PDF
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Panasonic super a series
Abstract: MA3Z792 MA3Z793 MA792 MA793
Text: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 1 2 (0.65) (0.65) Reverse voltage (DC) Repetitive peak reverse-voltage Peak forward
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Original
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MA3Z793
MA793)
Panasonic super a series
MA3Z792
MA3Z793
MA792
MA793
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PDF
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DIODE M4A
Abstract: Panasonic super a series MA3Z793 MA793
Text: Schottky Barrier Diodes SBD MA3Z793 (MA793) Silicon epitaxial planar type Unit : mm 2.1 ± 0.1 For super-high speed switching circuit For small current rectification + 0.1 • Two MA3Z792s diodes (series connection) are contained in the Smini type 3-pin package
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Original
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MA3Z793
MA793)
MA3Z792s
SC-70nductor
DIODE M4A
Panasonic super a series
MA3Z793
MA793
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PDF
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MA3X786
Abstract: MA3X791 MA786 MA791
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage
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Original
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MA3X791
MA791)
SC-59
MA3X786
MA3X791
MA786
MA791
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
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Original
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2002/95/EC)
MA3X791
MA791)
MA3X786
MA786)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z7930G Silicon epitaxial planar type For super high speed switching For small current rectification • Features ■ Package • Two MA3Z792 (MA792) is contained in one package (series connection)
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Original
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2002/95/EC)
MA3Z7930G
MA3Z792
MA792)
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PDF
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DIODE M4A
Abstract: Panasonic super a series MA3X791 MA791
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit : mm + 0.2 2.8 − 0.3 Reverse voltage (DC) Repetitive peak reverse voltage Peak forward current Single Average forward current Single Unit VR 30 V VRRM 30 V IFM 300 mA Series*2
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Original
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MA3X791
MA791)
O-236
SC-59
MA3X786s
DIODE M4A
Panasonic super a series
MA3X791
MA791
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PDF
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MA3X786
Abstract: MA3X791 MA786 MA791
Text: Schottky Barrier Diodes SBD MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 (0.95) (0.95) 1.9±0.1 2.90+0.20 –0.05 Repetitive peak reverse-voltage
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Original
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MA3X791
MA791)
SC-59
MA3X786
MA3X791
MA786
MA791
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3X791 (MA791) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.40+0.10 –0.05 0.16+0.10 –0.06 0.4±0.2
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Original
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2002/95/EC)
MA3X791
MA791)
MA3X786
MA786)
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PDF
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Untitled
Abstract: No abstract text available
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 3 5˚ • Two MA3Z792 (MA792) is contained in one package (series connection)
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Original
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2002/95/EC)
MA3Z793
MA793)
MA3Z792
MA792)
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PDF
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MA3Z792
Abstract: MA3Z793 MA792 MA793 SKH00098CED
Text: This product complies with the RoHS Directive EU 2002/95/EC . Schottky Barrier Diodes (SBD) MA3Z793 (MA793) Silicon epitaxial planar type Unit: mm For super high speed switching For small current rectification 0.3+0.1 –0 0.15+0.1 –0.05 M Di ain sc te
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Original
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2002/95/EC)
MA3Z793
MA793)
SC-79
MA3Z792
MA3Z793
MA792
MA793
SKH00098CED
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PDF
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