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    MARKING LW Search Results

    MARKING LW Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING LW Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    B12 GDM

    Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
    Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL


    Original     		PDF GP15M 0621X SB340 DO-204AC/ DO-204AL DO-201AD/ P600/MPG06 MPG06 VTS40100CT B12 GDM BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a

    GENERAL SEMICONDUCTOR MARKING mJ SMA ED

    Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
    Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)


    Original     		PDF GP15M 1N4005 1N4005/Logo DO-204AC 24-Jun-04 DO-204AL GENERAL SEMICONDUCTOR MARKING mJ SMA ED kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A

    A09 N03 MOSFET

    Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
    Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04


    Original     		PDF AD1580-A AD1580-B AD1582-A AD1582-B AD1582-C AD1583-A AD1583-B AD1583-C AD1584-A AD1584-B A09 N03 MOSFET marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23

    power supply 50w 24v

    Abstract: LWD50-0512 LWD30-0512 LWD30-0524 LWD50-1515 marking CH1 20A12V LWD301515 LWD15-0512 LWD15-0524
    Text: LWD-SERIES Dual output 15W ~ 50W LWD 50-1212 Name of series Output voltage 1212 : 12V, 12V Ex. of display 0512 : 5V, 12V 0524 : 5V, 24V Output power : 15W, 30W, 50W Ⅵ Features LWD50 ⅷ marking (Low Voltage Directive): E. L. V output ⅷ Wide input voltage range


    Original     		PDF LWD50 265VAC LWD30 LWD15 265VAC DC110 35omer MAW-1201-22 LWD30 power supply 50w 24v LWD50-0512 LWD30-0512 LWD30-0524 LWD50-1515 marking CH1 20A12V LWD301515 LWD15-0512 LWD15-0524

    Untitled

    Abstract: No abstract text available
    Text: SMT-Power-Induktivitäten SMT Power Inductors B82464-A4 Ungeschirmt B82464-A4 Unshielded Klimakategorie: Anschlüsse: Lötbarkeit: Beschriftung: Climatic category: Terminals: Solderability: Marking: Lieferform: VE: LR 2±0,2 10±0,2 Ansicht von unten Bottom view


    Original     		PDF B82464-A4 SSB1848-P 04153-K B82464-A4223-K B82464-A4333-K B82464-A4473-K B82464-A4683-K B82464-A4104-K B82464-A4154-K

    NCP5380 D

    Abstract: NCP5380 488AM
    Text: NCP5380, NCP5380A 7-Bit, Programmable, Single-Phase, Synchronous Buck Switching Regulator Controller http://onsemi.com General Description MARKING DIAGRAM 1 1 NCP5380 = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb Free Package


    Original     		PDF NCP5380, NCP5380A NCP5380/D NCP5380 D NCP5380 488AM

    Untitled

    Abstract: No abstract text available
    Text: NCP5380, NCP5380A 7-Bit, Programmable, Single-Phase, Synchronous Buck Switching Regulator Controller http://onsemi.com General Description MARKING DIAGRAM 1 1 NCP5380 = Specific Device Code A = Assembly Location WL = Wafer Lot YY = Year WW = Work Week G = Pb Free Package


    Original     		PDF NCP5380, NCP5380A NCP5380 NCP5380/D

    Untitled

    Abstract: No abstract text available
    Text: SMT Power Inductors SMT-Power-Induktivitäten 0. 1 1. 4± 2± 2. • Baugröße: 4.8 x 4.8 x 1.2 mm ■ Kernmaterial: Ferrit ■ RoHS-kompatibel (siehe Seite 112) Climatic category: 55/125/56 Terminals: Lead-free tinned Solderability: Reflow soldering Marking:


    Original     		PDF B82470A 12-mm IND031103M000 B82470A1153M000 B82470A1223M000 B82470A1333M000 B82470A1473M000 IND0396-I IND0397-K

    transistor Y4

    Abstract: marking 004 Supersot 6 complementary npn-pnp marking Y4 FMB1020 150MA80
    Text: FMB1020 Package: SuperSOT-6 Device Marking: .004 Note: The " . " dot signifies Pin 1 Transistor 1 is NPN device, transistor 2 is PNP device. NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package This dual complementary device was designed for use as a general purpose amplifier applications at


    Original     		PDF FMB1020 300mA. 100uA 100mA 150mA 200mA, 100MHz 100uA, fmb1020 transistor Y4 marking 004 Supersot 6 complementary npn-pnp marking Y4 150MA80

    SMBJ8.5CA

    Abstract: SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A
    Text: 上海晨启半导体有限公司 SHANGHAI SEMITECH SEMICONDUCTOR CO., LTD • 600 Watt Peak Power ■ Dimension Dim SMB DO-214AA ■ Specification Type Number (Uni) (Bi) Marking Millimeters Inches Min Max Min Max A 4.06 4.57 0.160 0.180 B 3.30 3.94 0.130


    Original     		PDF DO-214AA) SMBJ300A SMBJ300CA SMBJ350 SMBJ350C SMBJ350A SMBJ350CA SMBJ400 SMBJ400C SMBJ400A SMBJ8.5CA SMBJ15A SMBJ11CA SMBJ130A SMBJ170A SMBJ130CA SMBJ17A SMBJ14CA SMBJ58A SMBJ100A

    1721E50R

    Abstract: Marking Codes Philips MARKING CODE 2327E40R marking codes transistors LAE4001R transistor 502 r8 marking marking Code philips
    Text: Philips Semiconductors Microwave Transistors Marking codes MARKING CODES The microwave transistors in this book are normally marked with manufacturer’s name or trademark, type designation and lot identification code. If space on the transistor package is insufficient for full type designation, the following marking


    OCR Scan     		PDF LAE4001R LAE4002S LBE2003S LBE2009S LCE2009S LEE1015T LTE21009R LTE21015R LTE21025R LTE42005S 1721E50R Marking Codes Philips MARKING CODE 2327E40R marking codes transistors transistor 502 r8 marking marking Code philips

    Fuji Electric SM

    Abstract: No abstract text available
    Text: X 1. SCOPE This s p e c ific a tio n provides the ratings and the te s t requirement for FUJI SILICON DIODE YG801C09R 2. POT VIEW • MARKING- MOLDING RESIN 1 Out view is shown {2) Marking is shown I t is marked to type name or abbreviated type name, p o la rity and Lot No.


    OCR Scan     		PDF YG801C09R Fuji Electric SM

    transistors marking C3Z

    Abstract: marking C3Z CMPTA44
    Text: Central CMPTA44 Semiconductor Corp. NPN SILICON EXTREMELY HIGH VOLTAGE TRANSISTOR DESCRIPTION: TheCENTRALSEMICONDUCTORCMPTA44 type is a surface mount epoxy molded silicon planar epitaxial transistors designed for extremely high voltage applications. Marking Code is C3Z.


    OCR Scan     		PDF CMPTA44 OT-23 TheCENTRALSEMICONDUCTORCMPTA44 100mA transistors marking C3Z marking C3Z CMPTA44

    Untitled

    Abstract: No abstract text available
    Text: Central Semiconductor Corp. CBAS17 LOW VOLTAGE STABISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CBAS17 type is a planar epitaxial silicon switching diode, designed for low voltage stabilizing applications. Marking code is A91. SOT-23 CASE MAXIMUM RATINGS TA=25°C


    OCR Scan     		PDF CBAS17 OT-23 100mA G0D171S

    LWD30-0512

    Abstract: 2KVAC LWD15-0524 LWD15-0512 LWD15-1212 LWD50 15W-50W aw1202 15w50
    Text: LAMBDAA SERIES DENSEI-LAMBDA Dual output 1 5 W - 5 0 W • M odel nam e LWD 50-1212 [ Name of series Output voltage 1212 :1 2V, 12V | Ex. of display 0512:5V, 12V Output power : 15W, 30W, 50W 0524 : ■ F e a tu re s marking {Low Voltage Directive): E. L. V output


    OCR Scan     		PDF 5W-50W 265VAC 265VAC LWD50 LWD15 LWD30 LWD30-0512 2KVAC LWD15-0524 LWD15-0512 LWD15-1212 LWD50 15W-50W aw1202 15w50

    transistor Y2

    Abstract: Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors FMB3946 Supersot 6 Supersot6
    Text: MICDNDUCTDRtm FMB3946 C2 C1 E 1 _ _ _ _ _ Package: SuperSOT-6 Device Marking: .002 g2 - Note: The " . " dot signifies Pin 1 E2 Transistor 1 is NPN device, transistor 2 is PNP device. B1 NPN & PNP Complementary Dual Transistor SuperSOT-6 Surface Mount Package


    OCR Scan     		PDF FMB3946 100mA 100MHz 100MHz 10OuA, fmb3946 lwpPr23 transistor Y2 Y2 TRANSISTOR marking 002 marking Y2 transistor transistor marking y2 marking A1 TRANSISTOR complementary npn-pnp power transistors Supersot 6 Supersot6

    SMBJ20A

    Abstract: SMBJ8.5 A 15 SMBJ15A SMBJ130A SMBJ170A SMBJ17A SMBJ58A SMBJ100A SMBJ64A SMBJ6.5A
    Text: ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Device Marking Code Breakdown Voltage V(BR) (Volts) at It Min. Test Current @lT(mA) Stand-Off Voltage VWM(Volts) Maximun Reverse Leakage at Vwm Id ( u A ) Max. SMBJ5.0 6.40 10 KD 7.30 KE SMBJ5.0A


    OCR Scan     		PDF SMBJ90A SMBJ100 SMBJ100A SMBJ110 SMBJ110A SMBJ120 SMBJ120A SMBJ130 SMBJ130A SMBJ150 SMBJ20A SMBJ8.5 A 15 SMBJ15A SMBJ170A SMBJ17A SMBJ58A SMBJ64A SMBJ6.5A

    h140

    Abstract: TK11 TK11823 TK11823M 5CDM-658BN-1085 DB3-H140
    Text: TK11823M TABLE OF CONTENTS \ 1. Purpose 2.T0K0 Part Number 3.Function 4. Applications 5.Structure 6.Package Out 1ine 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Applications Information 13.Package Outline Dimensions/Marking


    OCR Scan     		PDF TK11823M DB3-H140 TK11823M. TK11823* QH7-B110. DP3-F016. h140 TK11 TK11823 TK11823M 5CDM-658BN-1085 DB3-H140

    39CA

    Abstract: DN 6V8A 6v8a 6v8ca transil sm6t 6V8C 39CA 144 33cA SM6T 68CA SM6T15 DW
    Text: rzj SURFACE MOUNT DEVICES SGS-THOMSON iiiQ gK iiLi(gra©R!io©i GENERAL PURPOSE & INDUSTRIAL TRANSIENT VOLTAGE SUPPRESSORS «TRANSIL» Marking Type *RM @ VRM @ V(BR * (V) V(CL) @ Ipp 1 ms expo •r max Unidirec­ tional 600 W / Bidirec­ tional Unidirec­


    OCR Scan     		PDF 100CA 150CA 200CA 39CA DN 6V8A 6v8a 6v8ca transil sm6t 6V8C 39CA 144 33cA SM6T 68CA SM6T15 DW

    "MARKING TE" US6

    Abstract: 2301 mini transistor
    Text: [3 ] Application Information 1. Overview 2. Device Marking [ 3 ] Application Information 1. Overview Toshiba B ias Resistor Transistors BR T s each contain a built-in base series resistor and baseem itter bias resistor. This helps you reduce the parts count in circuits to m iniaturize equipment


    OCR Scan     		PDF TE12L. TE12H. "MARKING TE" US6 2301 mini transistor

    Untitled

    Abstract: No abstract text available
    Text: MICRON I 1 SEMICONDUCTOR INC. MT10D140 MEG X 40 DRAM MODULE 1 MEG x 40 DRAM DRAM MODULE FAST PAGE MODE MT10D140 LOW POWER, EXTENDED REFRESH (MT10D140 L) FEATURES MARKING OPTIONS • Tim ing 60ns access 70ns access 80ns access -6 -7 -8 Packages Leadless 72-pin SIMM (gold)


    OCR Scan     		PDF MT10D140 MT10D140) MT10D140 72-pin er/128m MT10D140G-6 T10D140isarandom MT100140 0011SS1

    micron DRAM

    Abstract: No abstract text available
    Text: MT8D88C132H S , MT16D88C232H(S) 4MB, 8MB DRAM CARDS MICRON I TbCHNOLCOY INC. DRAM MINICARD 4, 8 MEGABYTES 1 MEG, 2 MEG x 32; 5V, FAST PAGE MODE, OPTIONAL SELF REFRESH FEATURES • • • • • • • • • OPTIONS MARKING • Timing 60ns access 70ns access


    OCR Scan     		PDF MT8D88C132H MT16D88C232H micron DRAM

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY l^ iiczn o N 16K LATCHED SRAM X MT56C16K16B2 16 LATCHED SRAM 16K X 16 SRAM WITH ADDRESS/ DATA INPUT LATCHES, BYTE ENABLES • • • • • • • OPTIONS MARKING • Timing 12ns access 15ns access 20ns access 25ns access -12 -15 -20 -25 • Packages


    OCR Scan     		PDF MT56C16K16B2 52-pin

    Untitled

    Abstract: No abstract text available
    Text: P ip tO S AP9A405 I SEMICONDUCTOR 8192 x 9 Asynchronous CMOS FIFO Features word may consist of a standard eight-bit byte with a parity bit or block-marking/framing bit. • Fast access times: 20, 25,35 ns • Fast-fall-through time architecture based on CMOS


    OCR Scan     		PDF AP9A405 28-pin, 300-Mil IDT7205 AP9A405 AP9A405-20PC 28-Pin AP9A405-25PC