Untitled
Abstract: No abstract text available
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD-123 Package . . . using the Schottky Barrier principle with a large area metal-to-silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SFT1
OD-123
38x38
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MBR140SF
Abstract: L4f marking marking L4F
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SFT1
OD-123
38x38
MBR140SF
L4f marking
marking L4F
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MBR140SFT1
Abstract: MBR140SFT3 SOD-123LF
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD–123 Package . . . using the Schottky Barrier principle with a large area metal–to–silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SFT1
r14525
MBR140SFT1/D
MBR140SFT1
MBR140SFT3
SOD-123LF
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MBR140SFT1
Abstract: MBR140SFT3
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package . . . using the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SFT1
OD-123
MBR140SFT1/D
MBR140SFT1
MBR140SFT3
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MBR140SFT1G
Abstract: nrvb140s nrvb14 NRVB140SFT1G Diode SOd-123 marking cu l4fm
Text: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR140SFT1G,
NRVB140SFT1G,
MBR140SFT3G,
NRVB140SFT3G,
OD-123
MBR140SFT1/D
MBR140SFT1G
nrvb140s
nrvb14
NRVB140SFT1G
Diode SOd-123 marking cu
l4fm
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Untitled
Abstract: No abstract text available
Text: MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SF,
NRVB140SF
MBR140SFT1/D
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MBR140SFT1G
Abstract: MBR140SFT1 MBR140SFT3 MBR140SFT3G Diode SOd-123 marking cu
Text: MBR140SFT1 Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SFT1
OD-123
MBR140SFT1/D
MBR140SFT1G
MBR140SFT1
MBR140SFT3
MBR140SFT3G
Diode SOd-123 marking cu
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NRVB140SF
Abstract: No abstract text available
Text: MBR140SF, NRVB140SF Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection
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MBR140SF,
NRVB140SF
OD-123
MBR140SFT1/D
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Untitled
Abstract: No abstract text available
Text: MBR140SFT1G, NRVB140SFT1G, MBR140SFT3G, NRVB140SFT3G, Surface Mount Schottky Power Rectifier Plastic SOD−123 Package This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high
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MBR140SFT1G,
NRVB140SFT1G,
MBR140SFT3G,
NRVB140SFT3G,
MBR140SFT1/D
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sot143 marking code G2
Abstract: Hitachi DSA001652
Text: 3SK321 Silicon N-Channel Dual Gate MOS FET ADE-208-711A Z 2nd. Edition Dec. 1998 Application UHF RF amplifier Features • Low noise figure. NF = 2.0 dB typ. at f = 900 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)
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3SK321
ADE-208-711A
OT-143
sot143 marking code G2
Hitachi DSA001652
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marking code g1s
Abstract: marking code g2s Hitachi DSA00164 diode g1s
Text: BB201M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-713A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.0 dB typ. at f = 900 MHz) • Withstanding to ESD;
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BB201M
ADE-208-713A
200pF,
OT-143
BB201M
marking code g1s
marking code g2s
Hitachi DSA00164
diode g1s
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marking L4F
Abstract: Hitachi DSA001652
Text: 3SK322 Silicon N-Channel Dual Gate MOS FET ADE-208-712A Z 2nd. Edition Dec. 1998 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation • Provide mini mold packages; MPAK-4R(SOT-143 var.)
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3SK322
ADE-208-712A
OT-143
marking L4F
Hitachi DSA001652
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Hitachi DSA0096
Abstract: 1SV70 BIC801M marking code g2s
Text: BIC801M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-705C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)
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BIC801M
ADE-208-705C
200pF,
OT-143mod)
BIC801M
Hitachi DSA0096
1SV70
marking code g2s
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Hitachi DSA0096
Abstract: 1SV70 BIC701M
Text: BIC701M Bias Controlled Monolithic IC VHF/UHF RF Amplifier ADE-208-703C Z 4th. Edition Nov. 1, 1998 Features • Bias Controlled Monolithic IC (No external DC biasing voltage on gate1.); To reduce using parts cost & PC board space. • High gain; PG = 27 dB typ. (at f = 200 MHz), PG = 21.5 dB typ. (at f = 900 MHz)
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BIC701M
ADE-208-703C
200pF,
OT-143mod)
BIC701M
Hitachi DSA0096
1SV70
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Hitachi DSA00164
Abstract: No abstract text available
Text: BB202M Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-714A Z 2nd. Edition Dec. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • Low noise characteristics; (NF = 2.1 dB typ. at f = 900 MHz) • Withstanding to ESD;
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BB202M
ADE-208-714A
200pF,
OT-143
BB202M
10nents
Hitachi DSA00164
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Hitachi DSA002743
Abstract: No abstract text available
Text: BB501C Build in Biasing Circuit MOS FET IC UHF RF Amplifier ADE-208-701C Z 4th. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High gain; PG = 21.5 dB typ. at f = 900 MHz • Low noise; NF = 1.85 dB typ. at f = 900 MHz
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BB501C
ADE-208-701C
200pF,
OT-343mod)
BB501C
Hitachi DSA002743
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Hitachi DSA0096
Abstract: 1SV70 BB303C SC-82AB SOT343 C5
Text: BB303C Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-698A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303C
ADE-208-698A
200pF,
OT-343
BB303C
Hitachi DSA0096
1SV70
SC-82AB
SOT343 C5
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Hitachi DSA0096
Abstract: 1SV70 BB303M
Text: BB303M Build in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier ADE-208-697A Z 2nd. Edition Nov. 1, 1998 Features • Build in Biasing Circuit; To reduce using parts cost & PC board space. • High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
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BB303M
ADE-208-697A
200pF,
OT-143
BB303M
Hitachi DSA0096
1SV70
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14164 1994
Abstract: en 10204 3.2 UNS31254 DN100 steam pipe DN40 PN16 en 10204 3.1 pitot sensor 10204 3.1b material certificate ISO5167 A193-B7
Text: Data sheet DS/TORBAR-EN Rev. D Torbar Averaging pitot tubes Economical flow metering solutions for gases, liquids and steam Unique profile shape — Ooffers high flow turndown No drift in co-efficient — Ensures long term stability One-piece outer tube — For pipes up to 5000 mm 197 in. diameter
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Untitled
Abstract: No abstract text available
Text: DM383 www.ti.com SPRS870B – APRIL 2013 – REVISED DECEMBER 2013 DM383 DaVinci Digital Media Processor Check for Samples: DM383 1 High-Performance System-on-Chip SoC 1.1 Features 123 • High-Performance DaVinci Digital Media Processors – Up to 1000-MHz ARM Cortex™-A8 RISC
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DM383
SPRS870B
DM383
1000-MHz
256KB
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Untitled
Abstract: No abstract text available
Text: niCRON TECHNOLOGY INC 5SE D blllSMT 0 0 0 3 4 l4fl “133 I^ IC R O N 8K urn M T5C 6408 X 8 S R AM •4 > -Z V I2 _ SRAM 8K X 8 SRAM • High speed: 8*, 10,12,15,20 and 25ns • High-performance, low-power, CMOS double-metal process • Single +5V ±10% power supply
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OCR Scan
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28-Pin
Q0G3455
MT5C6408
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silizium-Fotodiode mit sehr kleinem Dunkelstrom Silicon Photodiode with Very Low dark Current SFH 263 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale • Speziell geeignet für Anwendungen im
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SFH263
235LD5
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SMD l4fl
Abstract: smd TRANSISTOR code marking w2 qml-38535 CDFP4-F16 40109B Transistor SMD a7s transistor 5Cv smd
Text: REVISIONS DESCRIPTION LTR DATE YR-MO-DA APPROVED REV SHEET REV SHEET 15 16 REV STATUS OF SHEETS PMIC N/A STANDARD M ICRO CIRCUIT DRAW ING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE REV SHEET 8 10 11 12
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MIL-BUL-103.
MIL-BUL-103
JUL94
T0D47QÃ
0D20faÂ
SMD l4fl
smd TRANSISTOR code marking w2
qml-38535
CDFP4-F16
40109B
Transistor SMD a7s
transistor 5Cv smd
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LT1667
Abstract: LT1665 CA10 A058 dk 300 a008 82360SL LCD CMC 116 L01 2164 intel INTEL 82360 CD 2399 GP A049 crystal
Text: 5bE ]> • 4ÔSbl7S D i n o S M E34 « I T L 1 up/prpHLS irrte* Intel386 CORP SL MICROPROCESSOR SuperSet INTEL 'T~-(4c\ 1 7 -3 ^ Highly-Integrated Static Intel386™ SL Microprocessor Complete ISA Peripheral Subsystem System-Wide Power Management Static lntel386TM SL CPU
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Intel386TMCORP
Intel386TM
lntel386TM
Intel386
IOCS16#
MEMCS16#
Ctg27
LT1667
LT1665
CA10 A058
dk 300 a008
82360SL
LCD CMC 116 L01
2164 intel
INTEL 82360
CD 2399 GP
A049 crystal
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