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    MARKING L4 MOSFET SOT23 Search Results

    MARKING L4 MOSFET SOT23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MARKING L4 MOSFET SOT23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SI2304BDS

    Abstract: No abstract text available
    Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1 S-32137--Rev. 27-Oct-03

    Si2304BDS

    Abstract: Si2304BDS-T1
    Text: Si2304BDS Vishay Siliconix New Product N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 TO-236 (SOT-23) G 1 3 S D 2 Top View Si2304BDS (L4)* *Marking Code Ordering Information: Si2304BDS-T1—E3


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1--E3 S-32412--Rev. 24-Nov-03 Si2304BDS-T1

    P8207

    Abstract: bat545 LTC3722-1 Si7852DP datasheet 4440 16SP180M LTC4440 LTC4440EMS8E LTC4440ES6 TPSE686M020R0150
    Text: Final Electrical Specifications LTC4440 High Speed, High Voltage High Side Gate Driver October 2003 U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Wide Operating VIN Range: Up to 80V Rugged Architecture Tolerant of 100V VIN Transients Powerful 1.5Ω Driver Pull-Down


    Original     		PDF LTC4440 1000pF OT-23 LTC4440 350mV 2500VRMS 16-Pin 4440i P8207 bat545 LTC3722-1 Si7852DP datasheet 4440 16SP180M LTC4440EMS8E LTC4440ES6 TPSE686M020R0150

    LTC4440-5

    Abstract: LTC3722-2 PA0801 500w Full bridge transformer LTC3722-1 P8207 16TQC47M 1mH boost inductor dc to ac boost converter 500w LTC3723EGN-1
    Text: LTC4440-5 High Speed, High Voltage, High Side Gate Driver U FEATURES DESCRIPTIO • The LTC 4440-5 is a high frequency high side N-channel MOSFET gate driver that is designed to operate in applications with VIN voltages up to 60V. The LTC4440-5 can also withstand and continue to function during 80V VIN transients. The powerful driver capability reduces switching


    Original     		PDF LTC4440-5 LTC4440-5 44405fa LTC3722-2 PA0801 500w Full bridge transformer LTC3722-1 P8207 16TQC47M 1mH boost inductor dc to ac boost converter 500w LTC3723EGN-1

    LTC4440-5

    Abstract: No abstract text available
    Text: LTC4440-5 High Speed, High Voltage, High Side Gate Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Wide Operating VIN Range: Up to 60V Rugged Architecture Tolerant of 80V VIN Transients Powerful 1.85 Driver Pull-Down with 6V Supply


    Original     		PDF LTC4440-5 1000pF OT-23 44405fa LTC4440-5

    LTC4440-5

    Abstract: No abstract text available
    Text: LTC4440 High Speed, High Voltage High Side Gate Driver Description Features Wide Operating VIN Range: Up to 80V n Rugged Architecture Tolerant of 100V V IN Transients n Powerful 1.5Ω Driver Pull-Down n Powerful 2.4A Peak Current Driver Pull-Up n 7ns Fall Time Driving 1000pF Load


    Original     		PDF 1000pF OT-23 LTC4440 4440fa com/LTC4440 LTC4440-5

    P8207

    Abstract: LTC4440-5 PA0801 LTC4440EMS8E-5 LTC4440ES6-5 LTC3722-1 LTC4440 PA1294 PA0785 push-pull converter 80V 15A
    Text: LTC4440-5 High Speed, High Voltage, High Side Gate Driver U FEATURES DESCRIPTIO • The LTC 4440-5 is a high frequency high side N-channel MOSFET gate driver that is designed to operate in applications with VIN voltages up to 60V. The LTC4440-5 can also withstand and continue to function during 80V VIN transients. The powerful driver capability reduces switching


    Original     		PDF LTC4440-5 LTC4440-5 44405f P8207 PA0801 LTC4440EMS8E-5 LTC4440ES6-5 LTC3722-1 LTC4440 PA1294 PA0785 push-pull converter 80V 15A

    P8207

    Abstract: No abstract text available
    Text: LTC4440 High Speed, High Voltage High Side Gate Driver FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ U ■ DESCRIPTIO Wide Operating VIN Range: Up to 80V Rugged Architecture Tolerant of 100V VIN Transients Powerful 1.5Ω Driver Pull-Down Powerful 2.4A Peak Current Driver Pull-Up


    Original     		PDF LTC4440 1000pF OT-23 LTC4440 350mV 4440f P8207

    Si7852DP

    Abstract: 4w sot-23 marking LTC4440-5
    Text: LTC4440-5 High Speed, High Voltage, High Side Gate Driver Features Description n n n The LTC 4440-5 is a high frequency high side N-channel MOSFET gate driver that is designed to operate in applications with VIN voltages up to 60V. The LTC4440-5 can also withstand and continue to function during 80V VIN


    Original     		PDF LTC4440-5 LTC4440-5 LTC4440-5â LTC3901 LTC4440 LTC4441 44405fb com/LTC4440-5 Si7852DP 4w sot-23 marking

    P8207

    Abstract: PA0785 PA0801 ltzy PA0805 CSE 910 4.5V TO 100V INPUT REGULATOR PA-080 LTC4440EMS8E LTC4440ES6
    Text: LTC4440 High Speed, High Voltage High Side Gate Driver U FEATURES DESCRIPTIO • The LTC 4440 is a high frequency high side N-channel MOSFET gate driver that is designed to operate in applications with VIN voltages up to 80V. The LTC4440 can also withstand and continue to function during 100V VIN transients. The powerful driver capability reduces switching


    Original     		PDF LTC4440 LTC4440 1000pF 4440f P8207 PA0785 PA0801 ltzy PA0805 CSE 910 4.5V TO 100V INPUT REGULATOR PA-080 LTC4440EMS8E LTC4440ES6

    Untitled

    Abstract: No abstract text available
    Text: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic


    Original     		PDF SUM60N04-12LT SUM60N04-12LT 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SUM60N04-12LT Vishay Siliconix Temperature Sensing MOSFET, N-Channel 40-V D-S FEATURES PRODUCT SUMMARY V(BR)DSS (V) 40 rDS(on) (Ω) ID (A) 0.009 at VGS = 10 V 60a 0.012 at VGS = 4.5 V 60 Notes: a. Package Limited. DESCRIPTION The SUM60N04-12LT is a 40 V N-Channel, 15 mΩ logic


    Original     		PDF SUM60N04-12LT SUM60N04-12LT 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    NIPPON CAPACITORS

    Abstract: Transistor J438 CRCW08051001FKEA MRF21010
    Text: Freescale Semiconductor Technical Data RF Power Field Effect Transistor MRF21010LSR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010--2 MRF21010LSR1 MRF21010--2 NIPPON CAPACITORS Transistor J438 CRCW08051001FKEA MRF21010

    CRCW08051001FKEA

    Abstract: TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010
    Text: Document Number: MRF21010-2 Rev. 11, 10/2008 Freescale Semiconductor Technical Data RF Power Field Effect Transistor NOT RECOMMENDED FOR NEW DESIGN Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010--2 MRF21010LSR1 CRCW08051001FKEA TLX8-0300 C-XM-99-001-01 pd cms NIPPON CAPACITORS bourns 3224w FM LDMOS freescale transistor atc100B100GT500XT marking us capacitor pf l1 MRF21010

    half bridge converter 2kw

    Abstract: TTI8696 2kw power supply Full-bridge converter PA0801 P8207 f 1k MD 250v f 47k MD 250v 2kw mosfet pa1294.650
    Text: LTC3901 Secondary Side Synchronous Driver for Push-Pull and Full-Bridge Converters U FEATURES DESCRIPTIO • The LTC 3901 is a secondary side synchronous rectifier driver designed to be used in isolated push-pull and fullbridge converter power supplies. The chip drives two


    Original     		PDF LTC3901 4700pF 16-Lead LTC3901 LTC3722 LTC3723 LTC3900 LTC4441 LT4430 half bridge converter 2kw TTI8696 2kw power supply Full-bridge converter PA0801 P8207 f 1k MD 250v f 47k MD 250v 2kw mosfet pa1294.650

    CRCW08051001FKEA

    Abstract: MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010
    Text: Document Number: MRF21010-1 Rev. 10, 10/2008 Freescale Semiconductor Technical Data MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier


    Original     		PDF MRF21010--1 MRF21010LR1 CRCW08051001FKEA MRF21010 r1 marking us capacitor pf l1 ATC100B0R5BT500XT ATC100B102JT50XT MRF21010LR1 T491D106K035AT ONsemi marking C10 MRF21010

    CRCW08052201FKEA

    Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
    Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,


    Original     		PDF MRF21010--1 MRF21010LR1 CRCW08052201FKEA CRCW080510R0FKE MRF21010-1 MRF21010

    Untitled

    Abstract: No abstract text available
    Text: LTC1706-82 VID Voltage Programmer for Intel VRM9.0/9.1 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ The LTC 1706-82 is a precision, digitally programmed, resistive ladder which adjusts the output of any 0.8V referenced regulator. Depending on the state of the five


    Original     		PDF LTC1706-82 MSOP-10 LTC1706-82 OT-23, 550kHz, LTC1929/LTC1929-PG LTC3732 600kHz 170682fa

    LTC1628

    Abstract: LTC1706 LTC1629 LTC1702 LTC1706-82 LTC1735 LTC1735-1 LTC1929 LTC3729 LTC3732
    Text: LTC1706-82 VID Voltage Programmer for Intel VRM9.0/9.1 U DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ The LTC 1706-82 is a precision, digitally programmed, resistive ladder which adjusts the output of any 0.8V referenced regulator. Depending on the state of the five


    Original     		PDF LTC1706-82 MSOP-10 LTC1706-82 OT-23, 550kHz, LTC1929/LTC1929-PG LTC3732 600kHz 170682fa LTC1628 LTC1706 LTC1629 LTC1702 LTC1735 LTC1735-1 LTC1929 LTC3729 LTC3732

    TOP MARKING F2 ROHM SOT23

    Abstract: cl21b103kbnc MARKING G7 SOT23 MOSFET
    Text: PD - 94089 iP2001 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • 20A continuous output current with no derating up to TPCB = 90°C Very small 11mm x 11mm x 3mm profile


    Original     		PDF iP2001 iP2001 EIA-481 EIA-541. TOP MARKING F2 ROHM SOT23 cl21b103kbnc MARKING G7 SOT23 MOSFET

    l4 marking code

    Abstract: No abstract text available
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.070 @ VGS = 10 V 3.2 0.105 @ VGS = 4.5 V 2.6 D RoHS Compliant Qg (Typ) Product Is Completely Pb-free 26 2.6 TO-236 (SOT-23) G 1 S 2 3 D Top View


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1--E3 S-50574--Rev. 04-Apr-05 l4 marking code

    Untitled

    Abstract: No abstract text available
    Text: Si2304BDS Vishay Siliconix N-Channel 30 V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) () ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si2304BDS 2002/95/EC O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 11-Mar-11

    816C IC 4 pin

    Abstract: CL21B103KB CL21B1 MCH215A220JK marking 0123 rm73b1j510j
    Text: PD - 94089C iP2001 Synchronous Buck Multiphase Optimized BGA Power Block Integrated Power Semiconductors, Drivers & Passives Features: • • • • • 20A continuous output current with no derating up to TPCB = 90°C Very small 11mm x 11mm x 3mm profile


    Original     		PDF 94089C iP2001 iP2001 EIA-481 EIA-541. 816C IC 4 pin CL21B103KB CL21B1 MCH215A220JK marking 0123 rm73b1j510j

    Si2304BDS

    Abstract: Si2304BDS-T1-E3
    Text: Si2304BDS Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.070 at VGS = 10 V 3.2 0.105 at VGS = 4.5 V 2.6 • Halogen-free Option Available Qg (Typ.) RoHS 2.6 COMPLIANT TO-236 (SOT-23) G 1 3 S D 2 Top View


    Original     		PDF Si2304BDS O-236 OT-23) Si2304BDS-T1-E3 Si2304BDS-T1-GE3 08-Apr-05