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    MARKING L2 TAIWAN SEMICONDUCTOR Search Results

    MARKING L2 TAIWAN SEMICONDUCTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MARKING L2 TAIWAN SEMICONDUCTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Y1416

    Abstract: vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to provide our customers with easy access to this information


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    AND8004/D 14xxx Y1416 vk sot-363 LCX00 AND8004 MC74HC04ADR2 ASE CHUNGLI date code marking "marking Code" V2 MX marking code sot23 marking a6 sot363 PDF

    marking codes fairchild

    Abstract: SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


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    AND8004/D 14xxx r14525 AND8004/D marking codes fairchild SOT-363 a7 wz 74 marking SOT-363 MARKING WF marking 324 tssop 16 vk sot-363 On Semiconductor Logic Data Code and Traceability marking code cp SOT-363 A1 marking codes ON TSOP6 MARKING 6L PDF

    marking codes fairchild

    Abstract: HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D
    Text: AND8004/D ON Semiconductor Logic Date Code and Traceability Marking Prepared by: Douglas Buzard, Logic Product Engineering Edited by: Dianne von Borstel http://onsemi.com APPLICATION NOTE INTRODUCTION This is a summary of ON Semiconductor MOS Logic Device, Date Code, and Traceability Marking. We want to


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    AND8004/D r14525 marking codes fairchild HEP08 fairchild marking codes sot-23 TOREX TOP CODE AND8004 t324 SOT-353 A7 marking L5 sot363 xaa643 and8004 D PDF

    Untitled

    Abstract: No abstract text available
    Text: BZD17C SERIES Taiwan Semiconductor CREAT BY ART Voltage Regulator Diodes FEATURES - Silicon zener diodes - Low profile surface-mount package - Zener and surge current specification - Low leakage current - Excellent stability - Moisture sensitivity level: level 1, per J-STD-020


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    BZD17C J-STD-020 2011/65/EU 2002/96/EC JESD22-B102 D1406033 PDF

    MLC850

    Abstract: 2322 157 philips B.A date sheet karachi RF NPN POWER TRANSISTOR 2.5 GHZ BFG11 MLC852 2222 031 capacitor philips 2222 424
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG11; BFG11/X NPN 2 GHz RF power transistor Product specification Supersedes data of November 1992 File under Discrete Semiconductors, SC14 Philips Semiconductors 1995 Apr 07 Philips Semiconductors Product specification


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    BFG11; BFG11/X OT143 BFG11 SCD38 123055/1500/03/pp12 MLC850 2322 157 philips B.A date sheet karachi RF NPN POWER TRANSISTOR 2.5 GHZ BFG11 MLC852 2222 031 capacitor philips 2222 424 PDF

    BAT42WS

    Abstract: BAT42WS-T1 BAT43WS BAT43WS-T1
    Text: WTE POWER SEMICONDUCTORS BAT42WS / BAT43WS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    BAT42WS BAT43WS OD-323 OD-323, MIL-STD-202, BAT43WS BAT42WS-T1 BAT43WS-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: WTE POWER SEMICONDUCTORS BAT42WS / BAT43WS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability


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    BAT42WS BAT43WS OD-323 OD-323, MIL-STD-202, PDF

    BAT42W

    Abstract: BAT42W-T1 BAT43W BAT43W-T1
    Text: WTE POWER SEMICONDUCTORS BAT42W / BAT43W Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    BAT42W BAT43W OD-123 OD-123, MIL-STD-202, BAT43W BAT42W-T1 BAT43W-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: WTE POWER SEMICONDUCTORS BAT42W / BAT43W Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability


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    BAT42W BAT43W OD-123 OD-123, MIL-STD-202, PDF

    Untitled

    Abstract: No abstract text available
    Text: WTE POWER SEMICONDUCTORS BAT42WS / BAT43WS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability


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    BAT42WS BAT43WS OD-323 OD-323, MIL-STD-202, PDF

    Untitled

    Abstract: No abstract text available
    Text: WTE POWER SEMICONDUCTORS BAT42WS / BAT43WS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability


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    BAT42WS BAT43WS OD-323 OD-323, MIL-STD-202, PDF

    L2 diode SOD123

    Abstract: BAT42W-T1-LF marking L2 SOD123
    Text: WTE POWER SEMICONDUCTORS BAT42W / BAT43W Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Designed for Surface Mount Application C Plastic Material – UL Recognition Flammability


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    BAT42W BAT43W OD-123 OD-123, MIL-STD-202, L2 diode SOD123 BAT42W-T1-LF marking L2 SOD123 PDF

    BAT43WS

    Abstract: BAT43WS-T1 BAT42WS BAT42WS-T1
    Text: WTE POWER SEMICONDUCTORS BAT42WS / BAT43WS Pb SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    BAT42WS BAT43WS OD-323 OD-323, MIL-STD-202, BAT43WS BAT43WS-T1 BAT42WS-T1 PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet Dual 1.1MHz, 800mA Synchronous DC-DC Buck Converter General Description Features The AP3422 contains two independent 1.1MHz fixed frequency, current mode, PWM synchronous buck step-down DC-DC converters, each of them is capable of driving a 800mA load with high efficiency,


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    800mA AP3422 AP3422 AP3422. PDF

    L3 SOD323

    Abstract: SOD323 Package footprint BAT42WS BAT42WS-T1 BAT42WS-T3 BAT43WS BAT43WS-T1 BAT43WS-T3
    Text: BAT42WS / BAT43WS WTE POWER SEMICONDUCTORS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    BAT42WS BAT43WS OD-323 OD-323, MIL-STD-202, BAT43WS L3 SOD323 SOD323 Package footprint BAT42WS-T1 BAT42WS-T3 BAT43WS-T1 BAT43WS-T3 PDF

    L2 diode SOD123

    Abstract: marking L2 SOD123 sod-123 marking L2 BAT42W BAT42W-T1 BAT42W-T3 BAT43W BAT43W-T1 BAT43W-T3
    Text: BAT42W / BAT43W WTE POWER SEMICONDUCTORS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    BAT42W BAT43W OD-123 OD-123, MIL-STD-202, BAT42W L2 diode SOD123 marking L2 SOD123 sod-123 marking L2 BAT42W-T1 BAT42W-T3 BAT43W BAT43W-T1 BAT43W-T3 PDF

    Untitled

    Abstract: No abstract text available
    Text: BAT42W / BAT43W WTE POWER SEMICONDUCTORS SURFACE MOUNT SCHOTTKY BARRIER DIODE Features ! Low Turn-on Voltage ! ! Fast Switching PN Junction Guard Ring for Transient and ESD Protection ! Designed for Surface Mount Application C ! Plastic Material – UL Recognition Flammability


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    BAT42W BAT43W OD-123 OD-123, MIL-STD-202, BAT42W PDF

    BF1109

    Abstract: BF1109R BF1109WR dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs


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    BF1109; BF1109R; BF1109WR SCA55 117067/00/02/pp16 BF1109 BF1109R BF1109WR dual-gate PDF

    transistor marking NEP ghz

    Abstract: dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 File under Discrete Semiconductors, SC07 1997 Dec 02 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs


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    BF1105; BF1105R; BF1105WR SCA56 117067/00/03/pp16 transistor marking NEP ghz dk 2482 transistor BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate PDF

    transistor smd code marking 404

    Abstract: transistor smd code marking .404 transistor SMD MARKING CODE 882 transistor SMD MARKING CODE NB marking code NB TRANSISTOR SMD MARKING CODE BS t TRANSISTOR SMD MARKING CODE BS s NXP SOT143R MSL TRANSISTOR SMD MARKING CODE 1v marking code ff SMD Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 File under Discrete Semiconductors, SC07 1997 Dec 08 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs


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    BF1109; BF1109R; BF1109WR BF1109WR BF1109 BF1109R ICP1020807 transistor smd code marking 404 transistor smd code marking .404 transistor SMD MARKING CODE 882 transistor SMD MARKING CODE NB marking code NB TRANSISTOR SMD MARKING CODE BS t TRANSISTOR SMD MARKING CODE BS s NXP SOT143R MSL TRANSISTOR SMD MARKING CODE 1v marking code ff SMD Transistor PDF

    BSN254 AMO

    Abstract: DMOS Transistors BSN254
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BSN254 BSN254A N-channel enhancement mode vertical D-MOS transistors Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel enhancement mode vertical


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    BSN254 BSN254A SC13b BSN254) BSN254A) BSN254A BSN254; BSN254 AMO DMOS Transistors PDF

    I251

    Abstract: n5392 1N5391S 1N5399S
    Text: E TAIWAN 1N5391S - 1N5399S SEMICONDUCTOR 1.5 AMPS. Silicon Rectifiers tò RoHS DO-41 COM PLIANCE 1 ,1 C 7 '2 . n .0 8 0 ¡2 .0 ; DW . -J E J - Features o •> ■> ❖ <r 1 .3 ÌZ5.-1I M IN. I-p. h .205 -fi.2} High efficiency. Law VF High current capability


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    1N5391S 1N5399S DO-41 mil-STD-202. 1N5391STHRU1N5399S) I251 n5392 1N5399S PDF

    BZD17C

    Abstract: No abstract text available
    Text: BZD17C SERIES TAIWAN SEMICONDUCTOR s 0.8 Watts Voltage Regulator Diodes RoHS Sub SMA COMPLIANCE I* Features •b S ilic o n z e n e r d io d e s L o w p ra fi Ic s u rfa c e -rn o u n t p a c k a g ❖ Z e n e r a n d s u rg e c u r re n t s p e c ific a tio n


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    BZD17C PDF

    78Lxx voltage regulator

    Abstract: PV 1153 ts78l05 TS78L00 ts78L15 PV 1153 V marking A3 Taiwan semiconductor Marking Code ES SOT-89 TS78L00ACY TS78L00CY
    Text: TAIWAN E SEMICONDUCTOR TS78L00 Series 3-Terminal 100mA Positive Voltage Regulator pb RoHS CO M PLIANCE Pin D e fin itio n : 1. O utpu t 2. G round S O T -2 3 é 3. Input 1 Pin D e fin itio n : 1. Output 2. Input 3. Ground S O P -S S O T -8 9 Pin D e fin itio n ;


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    TS78L00 100mA OT-23 OT-89 TS78L00ACY TS78L00CY TS73LÃ 100mA. TS78MÃ 78Lxx voltage regulator PV 1153 ts78l05 ts78L15 PV 1153 V marking A3 Taiwan semiconductor Marking Code ES SOT-89 TS78L00ACY TS78L00CY PDF