CCV Series
Abstract: No abstract text available
Text: Organic Conductive Polymer Capacitors CCV CCV Series Features ‧105℃, 2,000 hours assured ‧Ultra low ESR, solid capacitors of SMD type ‧RoHS Compliance Marking color: Blue Specifications Items Category Temperature Range Capacitance Tolerance Leakage Current at 20℃ *
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120Hz,
CCV Series
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Untitled
Abstract: No abstract text available
Text: CVH SMD Aluminum Electrolytic Capacitors CVH Series Features ‧4φ ~ 18φ, 105℃, 2,000 ~ 5,000 hours assured ‧Large capacitance with ultra low impedance capacitors ‧Designed for surface mounting on high density PC board ‧RoHS Compliance Marking color: Black
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120Hz,
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5800c
Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V
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TM5500/TM5800
TM5800-933
CoolRun80
5800C093310
TM5800-867
5800C086710
TM5800-800
5800A080010
TM5500-800
5800c
bios programmer
block diagram of crusoe processor
TM5500-800
chip morphing
TM5800 feature
sdr sdram pcb layout
TM5800
TM5800-733
TM5800-800
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bios programmer
Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Text: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP
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TM5800
TM5800-1000-ULP
CoolRun80
5800T100021
TM5800-1000-VLP
5800N100021
TM5800-1000-LP
5800P100021
bios programmer
sdr sdram pcb layout
TM5800-1000-LP
processor cross reference
cdq42
5800R100021
TM5500
TM5800
16M X 32 SDR SDRAM
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block diagram of crusoe processor
Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz
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TM55E/TM58E
TM58EX-933
58EXAE093321
TM58EL-800
58ELAD080021
TM55EL-667
55ELAC066721
TM55E/TM58E
block diagram of crusoe processor
bios programmer
SDR100
TM5800
TM58EL-800
crusoe
"sdr sdram" design guideline
TM58E
SDR100 sdram dimm
TM55EL-667
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Untitled
Abstract: No abstract text available
Text: DATE M24k 三社日出に 古 APr . 九 Apr 1111Gol o 三官;同出叶ト千 170; !: ; : ; : ; ; ; : : ! ; 4 f H 7 4 ; 叫 す 了行寸 1 . 1 2012 ト 子 2 13 l Lma;， :;l17¥51:l: 1 川県辛』ι 出二斗; ￨ ト J : : : : : ; ; : : ! : : 2
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1111Gol
1000VDCï
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Untitled
Abstract: No abstract text available
Text: APPROVED PD - TBD AUTOMOTIVE MOSFET IRFR540Z IRFU540Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 100V RDS on = 28.5mΩ
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IRFR540Z
IRFU540Z
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Untitled
Abstract: No abstract text available
Text: IRFR540Z IRFU540Z Features D-Pak IRFR540Z Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l I-Pak IRFU540Z Description Specifically designed for Automotive applications,
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IRFR540Z
IRFU540Z
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IRFR540Z
Abstract: IRFU540Z P916A
Text: APPROVED PD - TBD AUTOMOTIVE MOSFET IRFR540Z IRFU540Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 100V RDS on = 28.5mΩ
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IRFR540Z
IRFU540Z
IRFR540Z
IRFU540Z
P916A
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Untitled
Abstract: No abstract text available
Text: IRFR1010Z IRFU1010Z I-Pak IRFU1010Z D-Pak IRFR1010Z Features Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l Description Specifically designed for Automotive applications,
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IRFR1010Z
IRFU1010Z
AN-994
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Untitled
Abstract: No abstract text available
Text: IRFR2307Z IRFU2307Z D Features Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax VDSS = 75V l RDS on = 16mΩ G ID = 42A S Description D-Pak IRFR2307Z Specifically designed for Automotive applications,
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IRFR2307Z
IRFU2307Z
197mH
AN-994
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IRFR1010Z
Abstract: IRf 48 MOSFET IRFU1010Z
Text: PD - 96897 AUTOMOTIVE MOSFET IRFR1010Z IRFU1010Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 7.5mΩ G
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IRFR1010Z
IRFU1010Z
AN-994
IRFR1010Z
IRf 48 MOSFET
IRFU1010Z
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IRFR1010Z
Abstract: IRFU1010Z
Text: PD - 96897 AUTOMOTIVE MOSFET IRFR1010Z IRFU1010Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 7.5mΩ G
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IRFR1010Z
IRFU1010Z
AN-994
IRFR1010Z
IRFU1010Z
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IRLR3705Z
Abstract: IRLU3705Z irlru3705z
Text: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET l l Description D VDSS = 55V
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IRLR3705Z
IRLU3705Z
AN-994
IRLR3705Z
IRLU3705Z
irlru3705z
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Untitled
Abstract: No abstract text available
Text: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features HEXFET Power MOSFET Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 8.0mΩ
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IRLR3705Z
IRLU3705Z
AN-994
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TH 2190 mosfet
Abstract: th 2190 IRFR2307Z IRFU2307Z
Text: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D RDS on = 16mΩ G Description
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IRFR2307Z
IRFU2307Z
AN-994
TH 2190 mosfet
th 2190
IRFR2307Z
IRFU2307Z
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VG 96924
Abstract: IRFR48Z IRFU48Z
Text: PD - 96924 AUTOMOTIVE MOSFET Features IRFR48Z IRFU48Z HEXFET Power MOSFET Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l D VDSS = 55V RDS on = 11mΩ G Description
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IRFR48Z
IRFU48Z
AN-994
VG 96924
IRFR48Z
IRFU48Z
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TH 2190 mosfet
Abstract: IRFu2307z IRFR2307Z
Text: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D RDS on = 16mΩ G Description
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IRFR2307Z
IRFU2307Z
AN-994
TH 2190 mosfet
IRFu2307z
IRFR2307Z
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IRLR3705Z
Abstract: IRLU3705Z irlru3705z
Text: PD - 96896 AUTOMOTIVE MOSFET IRLR3705Z IRLU3705Z Features Logic Level Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax HEXFET Power MOSFET l l Description D VDSS = 55V
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IRLR3705Z
IRLU3705Z
AN-994
IRLR3705Z
IRLU3705Z
irlru3705z
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IRFR1010Z
Abstract: No abstract text available
Text: PD - 96897 AUTOMOTIVE MOSFET IRFR1010Z IRFU1010Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 55V RDS on = 7.5mΩ G
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IRFR1010Z
IRFU1010Z
AN-994
IRFR1010Z
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VG 96924
Abstract: IRFR48Z IRFU48Z
Text: PD - 96924 AUTOMOTIVE MOSFET Features IRFR48Z IRFU48Z HEXFET Power MOSFET Advanced Process Technology lUltra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l D VDSS = 55V RDS on = 11mΩ G Description
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IRFR48Z
IRFU48Z
AN-994
VG 96924
IRFR48Z
IRFU48Z
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Untitled
Abstract: No abstract text available
Text: PD - 96910 AUTOMOTIVE MOSFET IRFR2307Z IRFU2307Z Features HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance l175°C Operating Temperature lFast Switching lRepetitive Avalanche Allowed up to Tjmax l l D VDSS = 75V RDS on = 16mΩ G
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IRFR2307Z
IRFU2307Z
AN-994
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Untitled
Abstract: No abstract text available
Text: _ i_ 2 3 REVISIONS c^!5u? jnw SJT e rTe'wle'fleyIntamotfii^^BSi’docJM nt. a STM DESCRIPTION ECN DATE APPROVED 11/26/07 A D -S U B TECHNICAL DATA SHELL : BODY : D JL CONTACTS : BOARDLOCK: REAR INSERT : GROUNDING : ELECTRICAL : CLIMATIC : c MARKING :
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L17SM2XXS114T
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a3101
Abstract: No abstract text available
Text: 1 1 M3 $ r 04.30 12.50 1 3.50 I 05.5 2 1 REVISIONS SYM DATE DESCRIPTION ECN APPROVED 31/01/07 A D -SU B TECHNICAL DATA D Hood, plastic. For 9 positions D - S U B connectors MATERIAL :black thermoplastic CLIMATIC : Temperature range - 3 0 ’C up to 90"C MARKING : Amphenol— . Series No.
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L17158706
a3101
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