A09 resistor network
Abstract: B1578 L05 MARKING
Text: MRP precision metal film resistor SIP network NEW features • • • • • Custom design network Ultra-precision performance for precision analog circuits Tolerance to ±0.1%, matching to 0.05% T.C.R. to ±25ppm/°C, tracking to 2ppm/°C Marking: Black body color with white marking
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25ppm/
49oom
A09 resistor network
B1578
L05 MARKING
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L07ESDL5V0C3
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L07ESDL5V0C3-2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 70 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION Thee L07ESDL5V0C3-2 is a low capacitance Electrostatic Discharge ESD protection diode in a SOT-23 (TO-236AB) small SMD plastic
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L07ESDL5V0C3-2
L07ESDL5V0C3-2
OT-23
O-236AB)
OT-23
L07ESDL5V0C3
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RJ45 LAN ESD
Abstract: No abstract text available
Text: LITE-ON SEMICONDUCTOR L07ESDL5V0C3-2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 70 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION Thee L07ESDL5V0C3-2 is a low capacitance Electrostatic Discharge ESD protection diode in a SOT-23 (TO-236AB) small SMD plastic
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L07ESDL5V0C3-2
L07ESDL5V0C3-2
OT-23
O-236AB)
OT-23
RJ45 LAN ESD
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smd marking gc5
Abstract: L07E
Text: LITE-ON SEMICONDUCTOR L07ESDL5V0C3-2 STAND-OFF VOLTAGE – 5.0 Volts POWER DISSIPATION – 70 WATTS ESD PROTECTION DEVICE GENERAL DESCRIPTION Thee L07ESDL5V0C3-2 is a low capacitance Electrostatic Discharge ESD protection diode in a SOT-23 (TO-236AB) small SMD plastic
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L07ESDL5V0C3-2
L07ESDL5V0C3-2
OT-23
O-236AB)
OT-23
smd marking gc5
L07E
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Untitled
Abstract: No abstract text available
Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin
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L-07C
Abstract: marking 1N3 1N5 diode L07C 2n2 j 100 L-07C10NJV6T
Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin
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Untitled
Abstract: No abstract text available
Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin
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Untitled
Abstract: No abstract text available
Text: RF CERAMIC CHIP INDUCTORS High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin
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L-07C
Abstract: marking code 33n 3n3 100
Text: RF ceRaMic chiP inDUcToRs High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance . These RF chip inductors are compact in size and feature lead-free tin
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R22-R27
Abstract: No abstract text available
Text: RF Ceramic Chip Inductors High frequency multi-layer chip inductors feature a monolithic body made of low loss ceramic and high conductivity metal electrodes to achieve optimal high frequency performance. These RF chip inductors are compact in size and feature lead-free tin
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B175
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-233 W Leaded Resettable NEAxial AHA 4/18/02 PPTC CERTIFIED Polymeric Positive Temp. Coefficient Devices SFAL 1. Features • ■ ■ Axial Leaded package Fully compatible with current industry standards Weldable nickel terminals
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SS-233
SFALST120
SFALST120T
SFALST120S
SFALST175
SFALST175L
SFALST175S
SFALST175SS
SFALVT210SL-19
ALST-175
B175
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sf 1020
Abstract: No abstract text available
Text: KOA SPEER ELECTRONICS, INC. SS-233 W Leaded Resettable PPTC NEAxial AHA 5/01/02 CERTIFIED Polymeric Positive Temp. Coefficient Devices SFAL 1. Features • Axial Leaded package ■ Fully compatible with current industry standards ■ Very low internal resistance
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SS-233
SFALST120
SFALST120T
SFALST120S
SFALST175
SFALST175L
SFALST175S
SFALVT210SL-19
ALST-175
sf 1020
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marking L07
Abstract: CMLT2907A
Text: CMLT2907A SURFACE MOUNT DUAL PNP SILICON TRANSISTOR SOT-563 CASE MAXIMUM RATINGS: TA=25°C SYMBOL Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO Emitter-Base Voltage VEBO Collector Current IC Power Dissipation PD Operating and Storage Junction Temperature
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CMLT2907A
OT-563
CMLT2907A
100MHz
150mA,
marking L07
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2907a
Abstract: CMLT2907A MARKING 2907A
Text: Central CMLT2907A SURFACE MOUNT PICOminiTM DUAL PNP SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563
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CMLT2907A
OT-563
OT-563
100MHz
150mA,
2907a
CMLT2907A
MARKING 2907A
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Untitled
Abstract: No abstract text available
Text: CMLT2907A w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON DUAL PNP TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563 surface
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CMLT2907A
OT-563
100MHz
150mA,
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NUR460P
Abstract: No abstract text available
Text: NUR460P Ultrafast power diode 3 January 2014 Product data sheet 1. General description Ultrafast power diode in a SOD141 DO-201AD axial lead plastic package. 2. Features and benefits • • • • • • • Axial leaded plastic package Fast switching
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NUR460P
OD141
DO-201AD)
NUR460P
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Untitled
Abstract: No abstract text available
Text: 4 FO-55112-C HONEYWELL PART NUMBER 3 2 DEFINITIONS 1 - % LINEARITY SHALL BE THE QUOTIENT OF THE MEASURED OUTPUT DEVIATION FROM THE THE MEASURED TEMPERATURE TO THE FULL SCALE OUTPUT SPAN 2 - % LINEARITY = MEASURED VOLTAGE @ T - INDEX VOLTAGE [DEFINED BY BEST FIT LINE
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FO-55112-C
SPS-L075-HALS
29MAR13
SPS-L075-HALS----HONENO
03JUN09
5M-1994
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k840
Abstract: No abstract text available
Text: RF Wirewound Chip Inductors These high frequency High-Q chip inductors feature a monolithic body made of low loss ceramic wound with wire to achieve optimal high frequency performance. These RF chip inductors are compact in size and are provided on tape and reel packaging which makes them ideal for high volume RF
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Cordl0603
100nH
680nH
270nH
470nH
k840
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part MARKING k48
Abstract: marking bc p28 CMSD4448 W4W MARKING CM0Z15L CMZ5936B CM0Z11V CMZ5945B marking 6ca marking code ca2
Text: Marking Codes Continued Marking Code Part Number Marking Code 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1F)C 2AC 2B 2C 2CA 2F 2FC 2G 2PC 2QC 2P 3A 3B 3E 3F 3G 3J 3K 3L 3P 4A 4B 4C 4E
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CMOD2004
CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
BC846A
CMSZ5250B
CMST3904
BC846B
part MARKING k48
marking bc p28
CMSD4448
W4W MARKING
CM0Z15L
CMZ5936B
CM0Z11V
CMZ5945B
marking 6ca
marking code ca2
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. M . COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC DIST REVISIONS ALL RIGHTS RESERVED. p HB D LTR DESCRIPTION B MARKING CHANGE B1 CORRECT MISTAKE C CHANGE NEW LOGO DATE DWN ECO ECO— 07— 013869 25-M AY-07 XN.Z
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/16A/45A
31MAR2000
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NTC 1K lm 102
Abstract: No abstract text available
Text: A COMPANY OF MODEL SSN “SOFT-START” NTC Therm istors Prelim inary For Inrush C u rre n t Suppressing D evices 1.5 A to 2 5 A a t 6 5 C FEATURES • Switching power supply applications • Special marking is available upon request • Protective silicone coating is standard and has a nominal thickness of
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BZX 48c 6v8
Abstract: PT2369 code Cj5 CMXZ11VTO 7006S
Text: M arking Codes Marking Code Part Number 04 04D 04A 04C 04S 040 1A 1A8 1AC 1B 1B8 1C8 1D8 1E 1E8 1F 1F8 1FF 1G 1G8 1H8 1J 1J8 1K 1K8 1L 1L8 1M8 1P 1PC 1QC 1RC 2AC 2B 2C 2C A 2F 2FC 2G 2 PC 2Q C 2P 3A 3AE 3B 3CE 3E 3F 3G 3J 3K 3L 3P 3SE 4A 4B 4C 4E 4F 4G 4P
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2004C
2004S
2004D
Z5250B
T3904
Z5251B
Z5252B
Z5253B
Z5254B
Z5255B
BZX 48c 6v8
PT2369
code Cj5
CMXZ11VTO
7006S
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Untitled
Abstract: No abstract text available
Text: Central" CMLT2907A Semiconductor Corp. SURFACE MOUNT PICOmini DUAL PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563
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CMLT2907A
OT-563
150mA-
150mA,
OT-563
13-November
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Untitled
Abstract: No abstract text available
Text: Central" CMLT2907A Sem iconductor Corp. SURFACE MOUNT PICOmini DUAL PNP SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEM ICONDUCTOR CMLT2907A consists of two individual, isolated 2907A PNP silicon transistors, manufactured by the epitaxial planar process and epoxy molded in an SOT-563
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CMLT2907A
OT-563
150mA,
OT-563
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