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    MARKING K GAAS FET Search Results

    MARKING K GAAS FET Result Highlights (2)

    Part ECAD Model Manufacturer Description Download Buy
    DC092A-B Analog Devices LTC1551: -4.1V OUTPUT GaAs FET Visit Analog Devices Buy
    DC092A-A Analog Devices LTC1550LCS8 - -4.1V OUTPUT GaA Visit Analog Devices Buy

    MARKING K GAAS FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    gaas fet marking B

    Abstract: gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"
    Text: Marking manner of MITSUBISHI GaAs FET QL-1104E-A July/2008 [Leadless ceramic package] GD-26, 27 Terminal position (from Top View) Top View ① ② B 0 1AL B 0 1AL Electrodes direction: ① Gate ② Source ③ Drain ② ③ ① ② ③ Drain Gate Source


    Original     		PDF QL-1104E-A July/2008) GD-26, MGF4951A/52A MGF4953A/54A MGF1951A MGF1952A MGF1953A MGF1954A MGF4851A gaas fet marking B gaas fet micro-X Package marking gaas fet marking a marking K gaas fet MGF1961A gaas fet micro-X Package gaas fet marking J MGF1964A MGF1963A Micro-X marking "K"

    XMFP1-M3

    Abstract: D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428
    Text: GaAs GaAs FIELD EFFECT TRANSISTOR GaAs FIELD EFFECT TRANSISTOR Murata Manufacturing Co., Ltd. Cat. No. O35E Contents Small Signal FETs XMFS Series ••••••••••••••••••••••••••••••••••••••••••••••••••••••


    Original     		PDF Rating3-5698410 XMFP1-M3 D 8243 HC E176 e170315 OF FET E176 FET E119 E176 field effect transistor E176 fet mc34063 step down external transistor 28428

    transistor smd CF rs

    Abstract: transistor smd marking mx transistor smd cf CF 750
    Text: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V


    Original     		PDF OT-143 Q62702-F1391 P-SOT143-4-1 EHT08531 GPS05559 transistor smd CF rs transistor smd marking mx transistor smd cf CF 750

    transistor smd CF rs

    Abstract: transistor smd marking mx smd marking CF marking K gaas fet gaas fet marking B FET GAAS marking a MARKING CF smd marking cf rl MMIC marking CODE cf RF smd code SOT143 Package
    Text: GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LNA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current typ. Operating voltage range: 3 to 6 V


    Original     		PDF OT-143 Q62702-F1391 P-SOT143-4-1 EHT08531 GPS05559 transistor smd CF rs transistor smd marking mx smd marking CF marking K gaas fet gaas fet marking B FET GAAS marking a MARKING CF smd marking cf rl MMIC marking CODE cf RF smd code SOT143 Package

    Untitled

    Abstract: No abstract text available
    Text: P r e l i m in a r y d a t a s h e e t , B G V 5 0 3 , Ma y 2 0 0 2 BGV 503 Negative Voltage Generator for biasing GaAs FETs and Po w e r A m p l i f ie r s W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-05-16


    Original     		PDF D-81541 EHT08520 EHT08521 BGV503 P-TSSOP-10

    BGV503

    Abstract: No abstract text available
    Text: Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and Power Amplifiers Wireless Si l i c on Di s c rete s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-11-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF BGV503, BGV503 D-81541 EHT08520 EHT08521 P-TSSOP-10 BGV503

    Untitled

    Abstract: No abstract text available
    Text: P r e l i m in a r y d a t a s h e e t , B G V 5 0 3 , J u n e 2 0 0 2 BGV 503 Negative Voltage Generator for biasing GaAs FETs and Po w e r A m p l i f ie r s W ir e le ss Si l ic o n D is c r e t e s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-06-11


    Original     		PDF D-81541 EHT08520 EHT08521 BGV503 P-TSSOP-10

    FET GAAS marking a

    Abstract: BGV503
    Text: Data sheet, BGV503, November 2002 BGV503 Negative Voltage Generator for biasing GaAs FETs and Power Amplifiers Wireless Si l i c on Di s c rete s N e v e r s t o p t h i n k i n g . Edition 2001-11-09 2002-11-11 Published by Infineon Technologies AG, St.-Martin-Strasse 53,


    Original     		PDF BGV503, BGV503 D-81541 EHT08520 EHT08521 P-TSSOP-10 FET GAAS marking a BGV503

    transistor marking E39

    Abstract: E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72
    Text: GaAs GaAs FIELD EFFECT TRANSISTOR Small Signal FETs XMFS Series XMFS Series are designed for low noise applications up to C-band to 6GHz . These devices are supplied in the plastic packages. (SOT-143) cFEATURES 1. Low Noise Figure. 2. High Associated Gain.


    Original     		PDF OT-143) transistor marking E39 E1491 E407 transistor E391 E308 E138 e696 E302 e798 marking E72

    marking code C1d SMD

    Abstract: smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503
    Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s


    Original     		PDF 503/BGV P-TSSOP-10-1 GPS09184 marking code C1d SMD smd C1D lowpassfilter marking bgv MARKING CODE SMD IC 503

    marking code C1d SMD

    Abstract: smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr
    Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s


    Original     		PDF 503/BGV P-TSSOP-10-1 GPS09184 marking code C1d SMD smd C1D Q62702-L0131 Q62702-L0132 marking bgv P-TSSOP-10-1 5v regulator c2pr

    Untitled

    Abstract: No abstract text available
    Text: GaAs Support IC BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips – BGV 503, BGV 903 – for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s


    Original     		PDF 503/BGV P-TSSOP-10-2 GPS09230

    MARKING CF

    Abstract: siemens gaas fet siemens PG 750 Q62702-F1391 PG 750 8 PIN marking 340 mmic MMIC SOT 89 marking CODE MMIC marking CODE 06
    Text: CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment


    Original     		PDF Q62702-F1391 100pF MARKING CF siemens gaas fet siemens PG 750 Q62702-F1391 PG 750 8 PIN marking 340 mmic MMIC SOT 89 marking CODE MMIC marking CODE 06

    transistor smd code marking 561

    Abstract: sot-223 MARKING CODE 718 smd marking 271 Sot
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L99 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 sot-223 MARKING CODE 718 smd marking 271 Sot

    transistor smd code marking 561

    Abstract: GPS05560 Q62702-L99 s-parameter s11 s12 s21
    Text: GaAs FET CLY 15 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Operating voltage range: 2.7 to 6 V POUT at VD = 3 V, f = 1.8 GHz typ. 31.5 dBm Efficiency better 50% ESD: Electrostatic discharge sensitive device,


    Original     		PDF Q62702-L99 OT-223 P-SOT223-4-2 EHT08941 GPS05560 transistor smd code marking 561 GPS05560 Q62702-L99 s-parameter s11 s12 s21

    WL431003667

    Abstract: TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512
    Text: GaAs FET CLY 10 Data Sheet • • • • • Power amplifier for mobile phones For frequencies from 400 MHz to 2.5 GHz Wide operating voltage range: 2.7 to 6 V VD = 3 V, f = 1.8 GHz, POUT = 28.5 dBm typ. High efficiency better 55% ESD: Electrostatic discharge sensitive device,


    Original     		PDF OT-223 Q62702-L94 P-SOT223-4-2 GPS05560 WL431003667 TRANSISTOR SMD MARKING CODE 703 TRANSISTOR SMD MARKING CODE 723 smd transistor marking p1 TRANSISTOR SMD MARKING CODE 512

    gaas fet marking AR

    Abstract: No abstract text available
    Text: Infineon tei hnoiosi*» GaAs Support 1C BGV 503/BGV 903 Preliminary Data Sheet Negative Voltage Generator for biasing GaAs FET and Power Amplifier Support chips - BGV 503, BGV 903 - for cellular phones • BGV 503: one-stage charge-pump with additional regulator for biasing GaAs-FET’s


    OCR Scan     		PDF 503/BGV 111111i gaas fet marking AR

    FMC141401-02

    Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
    Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking


    OCR Scan     		PDF

    MMIC marking code R

    Abstract: cf rt marking code
    Text: Infineon ♦Bihncloçjiâï GaAs MMIC CF 750 Data Sheet • • • • • • Biased Dual Gate GaAs FET For frequencies from 400 MHz to 3 GHz For mixer and amplifier applications, i.e LIMA- and buffer stages in handheld equipment Low power consumption, 2 mA operating current


    OCR Scan     		PDF Q62702-F1391 P-SOT143-4-1 MMIC marking code R cf rt marking code

    Siemens A 1458

    Abstract: FET marking code 365
    Text: SIEMENS CLY15 GaAs FET Datasheet * Power am plifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz 'O p e ra tin g voltage range: 2.7 to 6 V * P ^ at V 0=3V, f= 1.8 GHz typ. 31.5 dBm * Efficiency better 50% s s ~ /7 / d ^ ESD: G Electrostatic discharge sensitive device,


    OCR Scan     		PDF CLY15 Q62702-L99 Siemens A 1458 FET marking code 365

    MMIC "SOT 89" marking

    Abstract: marking HLEH Siemens MMIC MMIC marking code GA
    Text: SIEM EN S CF 750 GaAs MMIC Datasheet * Biased Dual Gate GaAs FET * For frequencies from 400 MHz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V * Ion-implanted planar structure


    OCR Scan     		PDF VPS05178 Q62702-F1391 MMIC "SOT 89" marking marking HLEH Siemens MMIC MMIC marking code GA

    CLY10

    Abstract: No abstract text available
    Text: SIEMENS CLY10 GaAs FET D a t a s h e e t * Power amplifier for mobile phones * For frequencies from 400 MHz to 2.5 GHz * Wide operating voltage range: 2.7 to 6 V * P „1Tat Vn=3V, f=1,8GHz 28.5 dBm typ. * High efficiency better 55 % 3 p k S 2 1 ESD: V PSC5 I6 J


    OCR Scan     		PDF CLY10 Q62702-L94 CLY10

    MMIC marking CODE cf

    Abstract: ma com 4 pin mmic A7560
    Text: SIEMENS CF 750 GaAs MMIC D a t a s h e e t * Biased Dual Gate G a A s FET * For frequencies from 400 M Hz to 3 GHz * Mixer and amplifier applications in handheld equipment * Low power consumption, 2mA operating current typ. * Operating voltage range: 3 to 6V


    OCR Scan     		PDF VPS05178 Q62702-F1391 Rn/50Q MMIC marking CODE cf ma com 4 pin mmic A7560

    transistor marking YD ghz

    Abstract: EHT07317
    Text: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,


    OCR Scan     		PDF Q62702-F1215 P-SOT143-4-1 EHT07327 transistor marking YD ghz EHT07317