Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtmm SG 30TC 12M Unit : mm Package : FTO-220G o -y H d ^ J 120V 30A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • o u t lin e Ir=40|jA Tj=175°C Full Molded Low Ir=40|jA Resistance for thermal run-away
|
OCR Scan
|
FTO-220G
J533-1)
SG30TC12M
50IIz
J533-1
|
PDF
|
marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode SG40TC12M diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm SG40TC12M o u tlin e Package : FTO-220G Unit : mm o -y H d ^ J 120V 40A 4.5 Feature • Tj=175°C • • • • • 7 Jb = E -Jb K • < S Ir = 6 0 |j A Tj=175°C Full Molded Low Ir=60|jA Resistance for thermal run-away
|
OCR Scan
|
FTO-220G
SG40TC12M
J533-1)
50IIz
J533-1
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
SG40TC12M
diode marking jb
|
PDF
|
marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB diode diode marking jb
Text: Schottky Barrier Diode Twin Diode mtmm S G 20T C 1 2 M o u t lin e U nit : mm Package : FTO-220G o -y H d ^ J 120V 20A 4.5 Feature • Tj=175°C • 7 Jb = E -Jb K • Tj=175°C • <SIr =30|j A • Low Ir =30| jA • Resistance for thermal run-away • Full Molded
|
OCR Scan
|
FTO-220G
J533-1)
SG20TC12M
50IIz
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
diode marking jb
|
PDF
|
marking JB SCHOTTKY BARRIER DIODE
Abstract: No abstract text available
Text: Ordering number: EN 3962 FP103 PNP Epitaxial Planar Silicon Transistor/ Composite Schottky Barrier Diode DC/DC Converter Applications F eatures • Composite type with a PNP transistor and a Schottky barrier diode contained in one packge, facilitating high-density mounting.
|
OCR Scan
|
FP103
FP103
2SB1121
SB07-03C,
250mm2X
100mA
70/iF
-20lB
1M20l82"
marking JB SCHOTTKY BARRIER DIODE
|
PDF
|
ERA83-004
Abstract: RA83
Text: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f
|
OCR Scan
|
ERA83-004
500ns,
JEKi141
RA83
|
PDF
|
RA83
Abstract: ERA83-004 A4DC
Text: ERA83-004<ia : Outline D raw ings SCHOTTKY BARRIER DIODE Features • ifeVF IS /K : Marking Low V F Super high speed sw itchin g. • t v — «fElîfe : Ù « f f i i -j af c f gf c t e ► ► ►►► High reliability by planer design. • ' J ^ m m f
|
OCR Scan
|
ERA83-004
500ns,
RA83
A4DC
|
PDF
|
Untitled
Abstract: No abstract text available
Text: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the
|
Original
|
FDZ7064S
FDZ7064S
|
PDF
|
marking JB SCHOTTKY BARRIER DIODE
Abstract: FDZ7064N FDZ7064S mosfet marking jb
Text: FDZ7064S 30V N-Channel PowerTrench SyncFETTM BGA MOSFET General Description Features This MOSFET is designed to replace a single MOSFET and parallel Schottky diode in synchronous DC:DC power supplies. Combining Fairchild’s 30V PowerTrench SyncFET process with state of the art BGA packaging, the
|
Original
|
FDZ7064S
FDZ7064S
marking JB SCHOTTKY BARRIER DIODE
FDZ7064N
mosfet marking jb
|
PDF
|
CH661H-20GP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH661H-20GP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 15 Volts CURRENT 0.1 Ampere APPLICATION * Low voltage high speed switching application FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363 * Low VF and low IR
|
Original
|
CH661H-20GP
SC-88/SOT-363
SC-88/SOT-363)
200mW
200mA
CH661H-20GP
|
PDF
|
diode marking jB
Abstract: marking JB SCHOTTKY BARRIER DIODE marking JB diode transistor marking JB marking jb
Text: CHENMKO ENTERPRISE CO.,LTD CH661H-20PT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 15 Volts CURRENT 0.1 Ampere APPLICATION * Low voltage high speed switching application FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363 * Low VF and low IR
|
Original
|
CH661H-20PT
SC-88/SOT-363
SC-88/SOT-363)
200mW
200mA
diode marking jB
marking JB SCHOTTKY BARRIER DIODE
marking JB diode
transistor marking JB
marking jb
|
PDF
|
marking JB SCHOTTKY BARRIER DIODE
Abstract: marking JB C10M25 marking JB diode transistor marking JB
Text: CHENMKO ENTERPRISE CO.,LTD CH761UPT SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 12 Volts CURRENT 0.1 Ampere APPLICATION * Low voltage high speed switching application FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363 * Low VF and low IR
|
Original
|
CH761UPT
SC-88/SOT-363
SC-88/SOT-363)
200mW
200mA
CH761ARACTERISTICS
marking JB SCHOTTKY BARRIER DIODE
marking JB
C10M25
marking JB diode
transistor marking JB
|
PDF
|
CH761UGP
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CH761UGP SURFACE MOUNT SCHOTTKY BARRIER DIODE VOLTAGE 12 Volts CURRENT 0.1 Ampere APPLICATION * Low voltage high speed switching application FEATURE SC-88/SOT-363 * Small surface mounting type. SC-88/SOT-363 * Low VF and low IR
|
Original
|
CH761UGP
SC-88/SOT-363
SC-88/SOT-363)
200mW
200mA
CH761UGP
|
PDF
|
DIODE MARKING EJL
Abstract: No abstract text available
Text: MOTOROLA Order this document by MBRS140T3/D SEMICONDUCTOR TECHNICAL DATA Surface Mount Schottky Power Rectifier MBRS140T3 . . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with
|
OCR Scan
|
MBRS140T3/D
DIODE MARKING EJL
|
PDF
|
smd marking code UAI
Abstract: DIODE smd marking smd diode schottky code marking 1A smd diode code I5 diode marking code YF smd marking code pi smd diode a9 diode MARKING CODE A9
Text: Schottky Barrier Diode Single Diode DG1M3 30V 1A Feature • itS/JvSJSMD • Ultra-small SMD • Ultla-thin PKG=0.8mm • 1 5 I r= 0.05mA • Low lR = 0 .0 5 m A • iSj S=0.8m m •<SVf=0.46V • Low V f=0.46V 3É • K 2 / 7 Main Use U — iS J U K lt
|
OCR Scan
|
50IIz
smd marking code UAI
DIODE smd marking
smd diode schottky code marking 1A
smd diode code I5
diode marking code YF
smd marking code pi
smd diode a9
diode MARKING CODE A9
|
PDF
|
|
|
x25-m
Abstract: MARKING H140 diode b tu 25 c JB SMD MARKING
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S4M U nit-m m W eight 0.326g Typ 40V 3A ® (g)(4) • SMD Feature • SMD • Tj=150lC • Tj=150°C • P r r s m T V ^ V ï ^ iS Ü Œ • P rrsm Rating High lo Rating-Small-RKG MainUse
|
OCR Scan
|
150lC
x25-m
MARKING H140
diode b tu 25 c
JB SMD MARKING
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : E-pack DE5SC6M Unit-mm Weight 0.326g Typ 60V 5A Feature >SM D •SM D • Tj=150°C •P rrsm 1Tj=150°C 1 P r r s m Rating 1 High lo Rating -Sm all-PKG T ’A ' ^ V S ' i f S l i E Main Use 1Sw itching Regulator
|
OCR Scan
|
|
PDF
|
smd diode schottky code marking 2F
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode m tm OUTLINE Package : 2F D2FS6 Unit^mm Weight 0.16g Typ io7 - F v - ? Cathode mark 60V 1.5A ®i Feature • Tj=150°C ' P rrsm T’A '^ V S ' i í SIÍE -<2> 1 1Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD T ype No.
|
OCR Scan
|
|
PDF
|
smd g4l
Abstract: RC25C
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE3S6M Unit-mm Weight 0.326g Typ 60V 3A Feature • SM D »SMD 1Tj=150°C ' P rrsm Rating 1 High Io Rating -Small-PKG • Tj=150°C • P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use 'D C /D C Z I y j K — 3>
|
OCR Scan
|
|
PDF
|
smd diode marking YK
Abstract: No abstract text available
Text: Schottky Barrier Diode Single Diode MW .® D2FS4 40V1.6A O UTLINE U n it^ m m Package : 2F W e ig h t 0 .1 6 g T y p * y — K v— Feature | Small SMD 1Tj=150°C 1 P rrsm Rating • /JvgySMD • Tj=150°C ' P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use
|
OCR Scan
|
|
PDF
|
diode tfk s 220
Abstract: TFK BP 3 TFK 140 TFK S KJ SMD DIODE MARKING
Text: Schottky Barrier Diode Twin Diode mtm OUTLINE Package : STO-220 DF10SC4M PyKLl°- ffl 40V m Unit-mm Weight 1.5g (Typ) 10.2 DA Feature a • SMD <SMD • Tj=150°C 1Tj=150°C 1 P rrsm Rating 1 High lo Rating -Small-PKG • P rrsm 4.7 Main Use 1Switching Regulator
|
OCR Scan
|
STO-220
DF10SC4M
diode tfk s 220
TFK BP
3 TFK 140
TFK S
KJ SMD DIODE MARKING
|
PDF
|
diode g4l
Abstract: smd g4l SMD diode JB 4/5/32R2024/25/g4l smd
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : E-pack DE5S6M Unit-mm Weight 0.326g Typ 60V 5A Feature »SMD 1Tj=150°C ' P rrsm Rating 1 High Io Rating -Small-PKG • SMD • Tj=150°C • P r r s m T ’A ' ^ V î ^ i î SIŒ Main Use 'D C /D C Z I y j K —3>
|
OCR Scan
|
--20V.
diode g4l
smd g4l
SMD diode JB
4/5/32R2024/25/g4l smd
|
PDF
|
smd marking YF
Abstract: K711 diode marking code YF DIODE SMD CODE MARKING LG J532 smd code marking jr
Text: Schottky Barrier Diode Single Diode m tm OUTLINE Package : G1F DG1S6 Unit-mm Weight 0.01 lg Typ 60 V 1A 3.5 Feature H • iiS'JvüJSM D • Ultra-small S M D • i2 j® s y = 0 .8 m m • Ultra-thin PKG=0.8m m • < S V f = 0 .5 8 V • Low V f=0.58V
|
OCR Scan
|
T/-10
160mm2)
160mnf)
i50Hz
smd marking YF
K711
diode marking code YF
DIODE SMD CODE MARKING LG
J532
smd code marking jr
|
PDF
|
smd diode schottky code marking 2F
Abstract: DG1N15A smd diode 5H J532 DIODE MARKING 9Y 1N711
Text: Schottky Barrier Diode Single Diode m tm DG 1 N 15A Weight 0.011 g Typ 3.5 CD r Feature a 1Ultra-small SMD • i2j®sy=0.8mm 1Ultra-thin PKG=0.8mm • < S I r = 0 .0 5 m A 1Low Ir = 0 .0 5 itiA L»[c_ <. Lì m (?) I |N 7 1 1 • ^JvS S M D • Unit-m m
|
OCR Scan
|
DG1N15A
100mm2)
100mnf)
i50Hz
smd diode schottky code marking 2F
DG1N15A
smd diode 5H
J532
DIODE MARKING 9Y
1N711
|
PDF
|
1FS6
Abstract: SMD MARKING CODE vv
Text: Schottky Barrier Diode Single Diode mtm OUTLINE Package : 1F D1FS6 ij V - F V - ? / Ccilhode m ark 60V 1.1 A Feature :i: Î I 1 Small SMD • /JvgySMD Unit-mm Weight 0.058g Typ to rs . h V) o> ^ 1Tj=150°C • Tj=150°C ' P r r s m T ’A ' ^ V ì ' i ì
|
OCR Scan
|
|
PDF
|
