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    MARKING IR 2CA Search Results

    MARKING IR 2CA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING IR 2CA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    6ca DIODE

    Abstract: DIODE marking 6CA DIODE 6ca marking 6ca vr 6ca marking 2ca
    Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded


    Original     		PDF CMUD2836 CMUD2838 OT-523 100mA 12-February 6ca DIODE DIODE marking 6CA DIODE 6ca marking 6ca vr 6ca marking 2ca

    6ca DIODE

    Abstract: DIODE 6ca DIODE marking 6CA marking code 18 surface mount diode marking 6ca CMUD2836 marking r4 diode CMUD2838 marking IR 2CA vr 6ca
    Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded


    Original     		PDF CMUD2836 CMUD2838 CMUD2838 OT-523 100mA 18-March 6ca DIODE DIODE 6ca DIODE marking 6CA marking code 18 surface mount diode marking 6ca CMUD2836 marking r4 diode marking IR 2CA vr 6ca

    Untitled

    Abstract: No abstract text available
    Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded


    Original     		PDF CMUD2836 CMUD2838 CMUD2838 OT-523 100mA

    6ca DIODE

    Abstract: DIODE marking 6CA DIODE 6ca CMUD2836 CMUD2838 marking 2ca marking IR 2CA DIODE marking 2CA vr 6ca
    Text: CMUD2836 CMUD2838 SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar


    Original     		PDF CMUD2836 CMUD2838 CMUD2838 OT-523 CMUD2836 100mA 6ca DIODE DIODE marking 6CA DIODE 6ca marking 2ca marking IR 2CA DIODE marking 2CA vr 6ca

    Untitled

    Abstract: No abstract text available
    Text: CMUD2836 CMUD2838 w w w. c e n t r a l s e m i . c o m SURFACE MOUNT DUAL, HIGH SPEED SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar


    Original     		PDF CMUD2836 CMUD2838 CMUD2838 OT-523 CMUD2836 100mA

    6ca DIODE

    Abstract: DIODE 6ca DUAL SURFACE MOUNT DIODE DIODE marking 6CA marking 6ca CMUD2836 CMUD2838 marking 2ca
    Text: Central CMUD2836 CMUD2838 TM Semiconductor Corp. ULTRAmini SURFACE MOUNT DUAL HIGH SPEED SWITCHING SILICON DIODE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 and CMUD2838 types are ultra-high speed silicon switching diodes manufactured by the epitaxial planar process, in an epoxy molded


    Original     		PDF CMUD2836 CMUD2838 CMUD2838 OT-523 100mA 30-August 6ca DIODE DIODE 6ca DUAL SURFACE MOUNT DIODE DIODE marking 6CA marking 6ca CMUD2836 marking 2ca

    DIODE marking 2CA

    Abstract: DUAL SURFACE MOUNT DIODE silicon power switching diode diode marking r0
    Text: Central CMUD2836 ULTRAmini SURFACE MOUNT DUAL COMMON ANODE HIGH SPEED SWITCHING SILICON DIODE TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMUD2836 type is an ultra-high speed silicon switching diode manufactured by the epitaxial planar process, in


    Original     		PDF CMUD2836 OT-523 100mA 15-August DIODE marking 2CA DUAL SURFACE MOUNT DIODE silicon power switching diode diode marking r0

    Untitled

    Abstract: No abstract text available
    Text: P6SMB SERIES Transient Voltage Suppressors 600W 0.086 (2.20) 0.077 (1.95) 0.155 (3.94) 0.130 (3.30) 0.180 (4.57) 0.160 (4.06) 0.0 (0.305) 0.012 0.006 (0.152) 0.096 (2.44) 0.084 (2.13) 0.008 (0.203) Max. 0.060 (1.52) 0.030 (0.76) 0.220 (5.59) 0.205 (5.21)


    Original     		PDF DO-214AA 2002/95/EC

    JDH3D01S

    Abstract: No abstract text available
    Text: JDH3D01S TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type JDH3D01S ○ For wave detection ¾ Unit: mm Small package Maximum Ratings Ta = 25°C Characteristic Symbol Rating Unit Reverse voltage VR 4 V Forward current IF 25 mA Junction temperature Tj


    Original     		PDF JDH3D01S 0024gtyp. JDH3D01S

    Untitled

    Abstract: No abstract text available
    Text: ES2AA - ES2JA 2.0AMPS Surface Mount Super Fast Rectifiers SMA/DO-214AC Features — Glass passivated junction chip — For surface mounted application — Low profile package — Built-in strain rellef — Ideal for automated placement — Easy pick and place —


    Original     		PDF SMA/DO-214AC J-STD-020D

    ES2JA F3

    Abstract: No abstract text available
    Text: ES2AA - ES2JA 2.0AMPS Surface Mount Super Fast Rectifiers SMA/DO-214AC Features — Glass passivated junction chip — For surface mounted application — Low profile package — Built-in strain rellef — Ideal for automated placement — Easy pick and place —


    Original     		PDF SMA/DO-214AC J-STD-020D RS-481 ES2JA F3

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Multilayer Ceramic Chip Capacitors SMD MLCCs Capacitor Array, X7R Dielectric, 10 – 200 VDC (Commercial & Automotive Grade) Overview KEMET’s Ceramic Chip Capacitor Array in X7R dielectric is an advanced passive technology where multiple capacitor elements


    Original     		PDF

    6ca DIODE

    Abstract: marking code 533 DIODE 6ca DIODE marking 6CA marking 6ca ON Semiconductor marking AN
    Text: Central CMUD2836 CMUD2838 Semiconductor Corp. SURFACE MOUNT ULTRAmini DUAL HIGH SPEED SILICON SWITCHING DIODES DUAL, COMMON ANODE DUAL, COMMON CATHODE MAXIMUM RATINGS: MARKING CODE: 2CA MARKING CODE: 6CA TA=25°C Peak Repetitive Reverse Voltage SYMBOL


    OCR Scan     		PDF CMUD2836 CMUD2838 CMUD2838 CPD63 18-March 6ca DIODE marking code 533 DIODE 6ca DIODE marking 6CA marking 6ca ON Semiconductor marking AN

    itt 2222a

    Abstract: itt 2907A motorola diode cross reference PTZA92 2222a pinout ZTA14 PTZA42 2907A bs33 zta96
    Text: MOTOROLA SC XSTRS/R MbE D F b3b?5SH GGTbSlb S • MOTb T ^ b O l ■ V " : SOT-22 ■•••.' , '¿»1%,»* 'f-f » Maximum die size Switching Transistors Pinout: 1-Base, 2-Collector, 3-Emitter, 4-Collector hFE Device <T Marking ton toff v (BR)CEO Min


    OCR Scan     		PDF PZT2222A PZT2907A PZTA14 BSP52 ZTA14 PZTA64 ZTA64 PTZA42 TZA42 itt 2222a itt 2907A motorola diode cross reference PTZA92 2222a pinout 2907A bs33 zta96

    GM3Z

    Abstract: No abstract text available
    Text: SANKEN E L E C T R I C Ï' î U S A HE Rectifier Diodes D | 7^0741 Vrm:100~1000V b □ O D D U 'i b io :1.3~30A h : ' • - T .o V ,c r GM/SG R ating/ Characteristics Absolute Maximum Ratings V rsm V V rm (V) lo (A) 500 200 400 800 1000 600 800 1200 1000


    OCR Scan     		PDF EU02A 10days 2nd10days SFPB-64 GM3Z

    CTL22S

    Abstract: CTB34 ctb-34 CTU-G3DR CTU1S CTUG3DR
    Text: SANKEN ELECTRIC U S A 11E D I ? ? 4 1 IVrm : 100— 200V Ultra Fast Recovery Diodes 00001*43 2 I H lo : 5 — 20 A CTL | V rm V lo (A) Tstg CC) Tj CC) Ifsm (A) With 60HzHaNSineWave 100 100 200 200 100 100 200 200 100 100 200 200 Ir (mA) Vf (V) trr Irm


    OCR Scan     		PDF CTL-11S CTL-12S CTL-21S CTL-22S CTL-31S CTL-32S CTB-33 CTB-34. MI-10/15 SFPB-64 CTL22S CTB34 ctb-34 CTU-G3DR CTU1S CTUG3DR

    EK13 equivalent

    Abstract: ek030 ctb-34s Sanken Rectifier GH-3S
    Text: SANKEN ELECTRI C U S A F- I M HE Schottky Barrier Diodes D I IV r m : 3 0 — 9 0 V 7 ^ 0 7 4 1 0DDÜ145 b | H lo : 0 .7 — 3 0 A T ' 0 SFPB/AK/EK/RK/FMB/CTB Type N o \ ^ Absolute Maximum Ratings < | Rating/ Characteristics Vrsm V Per c h ip lo (A) If s m


    OCR Scan     		PDF CTB-33 CTB-34. DMI-10/15 SFPB-64 EK13 equivalent ek030 ctb-34s Sanken Rectifier GH-3S

    MMBD501

    Abstract: MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MMBD2837 MBAS16 MBAV70
    Text: SURFACE MOUNT PRODUCTS — SOT-23 continued SOT-23 Switching Diodes (Dual Unless Otherwise Noted) Diode Pinout: Noted Below Device Marking MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD914 MBAS16 MBAL99 MMBD6050 MBAV99 MMBD7000 A2


    OCR Scan     		PDF OT-23 OT-23 MMBD2836 MBAW56 MMBD2835 MBAV74 MMBD2838 MBAV70 MMBD2837 MMBD6100 MMBD501 MMBV2098 MBAV99 A5 sot-23 single DIODE MMBV105G MMBV2097 A5 sot-23 DIODE MBAS16

    Untitled

    Abstract: No abstract text available
    Text: LH53BV8600N 8M Mask ROM Model No.: LH5D86xx Spec No.: EL093164 Issue Date: May 8, 1998 SHARP LH53BV8600N •Handle this document carefully for it contains material protected by international copyright law. Any reproduction, full or in part, of this material is prohibited


    OCR Scan     		PDF LH53BV8600N LH5D86xx) EL093164 OP44-P-600 AA1050 CV648

    marking q815

    Abstract: No abstract text available
    Text: H Y U N D A I - « H Y 512260 128Kx16. CMOS DRAM wlth/2CAS DESCRIPTION This family is a 2M bit dynamic RAM organized 131,072 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Independent read and write of upper and


    OCR Scan     		PDF 128Kx16. 16-bit 16-bits marking q815

    Untitled

    Abstract: No abstract text available
    Text: •HYUNDAI HY514260B 256KX16, CMOS DRAM w ith /2CAS DESCRIPTION This family is a 4M bit dynamic RAM organized 262,144 x 16-bit configuration with CMOS DRAMs. The circuit and process design allow this device to achieve high performance and low power dissipation. Optional features are access time 50, 60


    OCR Scan     		PDF HY514260B 256KX16, 16-bit 16-bits 256Kx16

    Untitled

    Abstract: No abstract text available
    Text: TAIWAN SEMICONDUCTOR [ s Pb RoHS COMPLIANCE ES2AA - ES2JA 2.0 AMPS. Surface Mount Super Fast Rectifiers S MA/DO-214AC .062 1.58 .050(1.27) .111(2.83) .090(2.29) Ï Ï I Features 4-v-v❖ -v4-y4-v•> UL R ecognized F ile # E -326243 Glass passivated junction chip


    OCR Scan     		PDF /DO-214 E-326243

    marking code GIF

    Abstract: NMB MANUFACTURER DDEE177 LH53C8600N CD0-D15
    Text: SHARP LH53C8S00N C L O N T E N T S General Description P. 2 2. Features P. 2 3. Block Diagrai P. 3 4. Pin Connections P. 4 5. Pin Description P. 4 6. Absolute laxiauatatings P. 5 7. Operating Kanges P. 5 î, P.C. Electrical Characteristics P.5 9. A. C. Electrical Characteristics


    OCR Scan     		PDF LH53C8 002217b LHKJSxxQJ53C3600H) S0P44-P-800 AA10S0 OP600SPK-A2 CV64S marking code GIF NMB MANUFACTURER DDEE177 LH53C8600N CD0-D15

    CTU1S

    Abstract: CTB34 ad lot id CTB-34 CTU22S
    Text: sanken El e c t r i c u s a HE Fast Recovery Diodes V rm V Type N a \ ^ 1350 CTU-G2DR 1350 CTU-G3DR 150 FMU-11S , R FMU-12S, R 250 450 FMU-14S, R 650 FMU-16S, R 150 FMU-21S, R 250 FMU-22S, R FMU-24S, R 450 FMU-26S, R L 650 150 FMU-31S, R 250 FMU-32S, R 450


    OCR Scan     		PDF 0GQO133 FMU-11S FMU-12S, FMU-14S, FMU-16S, FMU-21S, FMU-22S, FMU-24S, FMU-26S, FMU-31S, CTU1S CTB34 ad lot id CTB-34 CTU22S