YSI 400
Abstract: act test M4DL-ACT-10 M4DL-ACT-11 M4DL-ACT-12 M4DL-ACT-30 M4DL-ACT-35 M4DL-ACT-40 M4DL-ACT-45 M4DL-ACT-50
Text: DESIGN NOTES continued OPERATING SPECIFICATIO N S Marking consists of manufacturer's name, logo (EC^J, part number, term inal id e n tifica tio n and date code of manufacture. All marking is applied by silk screen process using white epoxy paint in accordance with MIL-STD-130, to meet the
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MIL-STD-130,
MIL-STD-202,
M4DL-ACT-25
600ns.
000ns.
C/071589
YSI 400
act test
M4DL-ACT-10
M4DL-ACT-11
M4DL-ACT-12
M4DL-ACT-30
M4DL-ACT-35
M4DL-ACT-40
M4DL-ACT-45
M4DL-ACT-50
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QFN-32 footprint
Abstract: TRANSISTOR FS 2025 32 pins qfn 5x5 footprint NB7V572M PRBS23 QFN32 NB7VQ572M 2825 qfn jedec package QFN-32 FOOTPRINT
Text: NB7VQ572M 1.8V / 2.5V /3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB7VQ572M is a high performance differential 4:1 Clock /
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NB7VQ572M
NB7VQ572M
NB7V572M,
NB7VQ572M/D
QFN-32 footprint
TRANSISTOR FS 2025
32 pins qfn 5x5 footprint
NB7V572M
PRBS23
QFN32
2825 qfn
jedec package QFN-32 FOOTPRINT
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Untitled
Abstract: No abstract text available
Text: NB7VQ572M 1.8V / 2.5V /3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB7VQ572M is a high performance differential 4:1 Clock /
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NB7VQ572M
NB7VQ572M
NB7V572M,
NB7VQ572M/D
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9RC6066
Abstract: BOSCH 0 212 912 001 TDA1047 Bosch alternator diode TDA3541 TDA3520 B250/220-10 TDA3510 TDA1519 tda1044
Text: Frames of designations and their marking 201.12-1 Dip-tab12 « General director: 8342 253890 « Technical director: (8342) 254139 « Commercial director: (8342) 253876 « Financial director: (8342) 254166 ¬ FAX: (8342) 253890 2202.12-1 Quip-tab12 Integrated circuit (IC)
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Dip-tab12
Quip-tab12
LM235
IL235Z
L272M
L9686
U2043
U642B
MC33193
IN33193N,
9RC6066
BOSCH 0 212 912 001
TDA1047
Bosch alternator diode
TDA3541
TDA3520
B250/220-10
TDA3510
TDA1519
tda1044
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5800c
Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V
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TM5500/TM5800
TM5800-933
CoolRun80
5800C093310
TM5800-867
5800C086710
TM5800-800
5800A080010
TM5500-800
5800c
bios programmer
block diagram of crusoe processor
TM5500-800
chip morphing
TM5800 feature
sdr sdram pcb layout
TM5800
TM5800-733
TM5800-800
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bios programmer
Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Text: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP
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TM5800
TM5800-1000-ULP
CoolRun80
5800T100021
TM5800-1000-VLP
5800N100021
TM5800-1000-LP
5800P100021
bios programmer
sdr sdram pcb layout
TM5800-1000-LP
processor cross reference
cdq42
5800R100021
TM5500
TM5800
16M X 32 SDR SDRAM
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block diagram of crusoe processor
Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz
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TM55E/TM58E
TM58EX-933
58EXAE093321
TM58EL-800
58ELAD080021
TM55EL-667
55ELAC066721
TM55E/TM58E
block diagram of crusoe processor
bios programmer
SDR100
TM5800
TM58EL-800
crusoe
"sdr sdram" design guideline
TM58E
SDR100 sdram dimm
TM55EL-667
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NB6L572M
Abstract: No abstract text available
Text: NB6LQ572M 2.5V / 3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB6LQ572M is a high performance differential 4:1 Clock / Data input multiplexer and a 1:2 CML Clock / Data fanout buffer that
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NB6LQ572M
NB6LQ572M
NB6L572M,
NB6LQ572M/D
NB6L572M
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QFN-32 footprint
Abstract: 32 pins qfn 5x5 footprint marking dj2 QFN-32 NB6VQ572MMNG PRBS23 QFN32 NB7V572M
Text: NB6VQ572M 1.8V / 2.5V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB6VQ572M is a high performance differential 4:1 Clock / Data input multiplexer and a 1:2 CML Clock / Data fanout buffer that
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NB6VQ572M
NB6VQ572M
NB7V572M,
NB6VQ572M/D
QFN-32 footprint
32 pins qfn 5x5 footprint
marking dj2
QFN-32
NB6VQ572MMNG
PRBS23
QFN32
NB7V572M
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Untitled
Abstract: No abstract text available
Text: NB6VQ572M 1.8V / 2.5V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB6VQ572M is a high performance differential 4:1 Clock / Data input multiplexer and a 1:2 CML Clock / Data fanout buffer that
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NB6VQ572M
NB6VQ572M
NB7V572M,
NB6VQ572M/D
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32 pins qfn 5x5mm footprint
Abstract: QFN-32 footprint PRBS23 QFN32 NB6L572M
Text: NB6LQ572M 2.5V / 3.3V Differential 4:1 Mux w/Input Equalizer to 1:2 CML Clock/Data Fanout / Translator http://onsemi.com Multi−Level Inputs w/ Internal Termination MARKING DIAGRAM Description The NB6LQ572M is a high performance differential 4:1 Clock / Data input multiplexer and a 1:2 CML Clock / Data fanout buffer that
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NB6LQ572M
NB6LQ572M
NB6L572M,
NB6LQ572M/D
32 pins qfn 5x5mm footprint
QFN-32 footprint
PRBS23
QFN32
NB6L572M
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EN29LV040A-70
Abstract: EN29LV040A EN29LV040 cFeon
Text: EN29LV040A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV040A
32-Pin
EN29LV040A-70
EN29LV040A
EN29LV040
cFeon
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cFeon EN29
Abstract: cfeon en29lv320ab cFeon EN29LV320A cFeon EN eon en29
Text: EN29LV320A Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV320A
cFeon EN29
cfeon en29lv320ab
cFeon
EN29LV320A
cFeon EN
eon en29
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cFeon
Abstract: cfeon 32 EN29LV010
Text: EN29LV010 Purpose Eon Silicon Solution Inc. hereinafter called “Eon” is going to provide its products’ top marking on ICs with < cFeon > from January 1st, 2009, and without any change of the part number and the compositions of the ICs. Eon is still keeping the promise of quality for all the products with the
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EN29LV010
cFeon
cfeon 32
EN29LV010
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SMC - SY5120
Abstract: SMC SY313 omron G71-OD16 SY7120 G71-OD16 SY340 431a1 diode sy GVVZS3000-21A-2 19n marking 2 pin diode
Text: High Capacity & Simple Choices Series SY 5 Port Rubber Seal Solenoid Valve SV SY SYJ SX VK VZ VF VFR VP7 VQC SQ VQ VQ4 VQ5 VQZ VQD VFS VS VS7 VQ7 Series SY9000 newly realased 1.2-1 CE Marking Compliant Products The SY series complies with the EMC Directive and the Low Energy Directive based
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SY9000
SY3000
SY5000
SY7000
SMC - SY5120
SMC SY313
omron G71-OD16
SY7120
G71-OD16
SY340
431a1
diode sy
GVVZS3000-21A-2
19n marking 2 pin diode
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Si5330A-A00200-GM
Abstract: No abstract text available
Text: Si5330 1 . 8 / 2 . 5 / 3 . 3 V L O W - J I T T E R, L O W - S K EW C L O C K B U F F E R / L E V E L TR A N S L A T O R Features 18 OEB 19 CLK1A 17 20 CLK1B 16 21 VDDO1 VDDO2 CLK2A CLK2B GND GND RSVD_GND 7 VDD RSVD_GND 6 Functional Block Diagram 22 15 IN3
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Si5330
24-lead,
Si5330A-A00200-GM
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NRTL
Abstract: d496 P024F048T12AL P036F048T12AL P045F048T32AL P048F048T12AL P048F048T24AL V048F015T100 V048F020T080 V048F030T070
Text: V•I Chip PRM Regulator and VTM Current Multiplier TM TM 6,73 0.265 0816 US S • Power Density > 1000 W/in3 • Regulation 0.2% Remote Sense NRTL • Low profile 0.265” C • ZVS buck-boost regulator (PRM) 22,0 0.87 MADE IN USA • High efficiency up to 97%
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RE40
Abstract: NRTL P024F048T12AL v048t P036F048T12AL P048F048T12AL P048F048T24AL V048F015T100 D496 VIV0005TFJ
Text: V•I Chip PRM Regulator and VTM Current Multiplier TM TM 6,73 0.265 0816 US S • Power Density > 1000 W/in3 • Regulation 0.2% Remote Sense NRTL • Low profile 0.265” C • ZVS buck-boost regulator (PRM) 22,0 0.87 MADE IN USA • High efficiency up to 97%
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VIV0005TFJ
VIV0007TFJ)
RE40
NRTL
P024F048T12AL
v048t
P036F048T12AL
P048F048T12AL
P048F048T24AL
V048F015T100
D496
VIV0005TFJ
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Untitled
Abstract: No abstract text available
Text: V•I Chip PRM Regulator and VTM Current Multiplier TM TM 6,6 0.26 0816 US S • Power Density > 1000 W/in3 • Regulation 0.2% Remote Sense NRTL • Low profile 0.26” C • ZVS buck-boost regulator (PRM) 22,0 0.87 MADE IN USA • High efficiency up to 97%
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AP8265VIDE323P
Abstract: D496
Text: V•I Chip PRM Regulator and VTM Current Multiplier TM TM 6,6 0.26 0816 US S • Power Density > 1000 W/in3 • Regulation 0.2% Remote Sense NRTL • Low profile 0.26” C • ZVS buck-boost regulator (PRM) 22,0 0.87 MADE IN USA • High efficiency up to 97%
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Untitled
Abstract: No abstract text available
Text: DCR DCR01 Series 01 DCR 01 SBVS013C – OCTOBER 2001 – REVISED MAY 2003 Miniature, 1W Isolated REGULATED DC/DC CONVERTERS FEATURES APPLICATIONS ● UL1950 RECOGNIZED ● ● ● ● ● DIP-18, SO-28 ● 53W/in3 3.3W/cm3 POWER DENSITY ● DEVICE-TO-DEVICE SYNCHRONIZATION
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DCR01
SBVS013C
UL1950
DIP-18,
SO-28
1000Vrms
400kHz
DCR01
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BCM48BH120T120A00
Abstract: B048F030T21 B048F040T20 B048F060T24 B048F080T24 B048F096T24 B048F120T30 B048F160T24 B048F480T30
Text: V•I Chip BCM Bus Converter RoHS • Input: 48 V • Isolation: 2,250 Vdc • Power Density: >1000 W/in3 • Footprint: 0.56 in2 / 1.08 in2 NRTL S C MADE IN USA • Current sharing: 5% BCM • Efficiency: up to 96% US 22,0 0.87 U.S. PATS. LISTED ON PACKING MATERIALS & DATASHEETS
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B048F030T21
Abstract: B048F040T20 B048F060T24 B048F080T24 B048F096T24 B048F120T30 B048F160T24 VIB0101THJ
Text: V•I Chip BCM Bus Converter • Current sharing: 5% • Input: 48 V • Isolation: 2,250 Vdc • Power Density: >1000 W/in3 • Footprint: 0.56 in2 / 1.08 in2 0812 RoHS US S NRTL C AP8265VIDE213P VIB0101THJ • Efficiency: up to 96% MADE IN USA 22,0 0.87
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AP8265VIDE213P
VIB0101THJ
B048F030T21
B048F040T20
B048F060T24
B048F080T24
B048F096T24
B048F120T30
B048F160T24
VIB0101THJ
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BCM48BH120T120A00
Abstract: No abstract text available
Text: V•I Chip BCM Bus Converter • Current sharing: 5% • Input: 48 V • Isolation: 2,250 Vdc • Power Density: >1000 W/in3 • Footprint: 0.56 in2 / 1.08 in2 0812 RoHS US S NRTL C AP8265VIDE213P VIB0101THJ • Efficiency: up to 96% MADE IN USA 22,0 0.87
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VIB0101THJ
AP8265VIDE213P
BCM48BH120T120A00
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