A09 N03 MOSFET
Abstract: marking B3A sot23-5 t7G SOT23-6 marking H2A sot-23 ADM2004 marking moy sot-23 A06 N03 MOSFET SOT23-5 D2Q M05 SOT-23 M2A MARKING SOT-23
Text: Tiny Part Number Cross Reference Package Marking Model Function Package Description Package Marking Model Function Package Description 0Axx 0Bxx 2A0A 2B0A 2C0A 3A0A 3B0A 3C0A 4A0A 4B0A 4C0A 5A0A 5B0A 5C0A 9Jxx 9Lxx 9Mxx 9Rxx 9Sxx 9Txx 9Zxx A00 A01 A02 A04
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AD1580-A
AD1580-B
AD1582-A
AD1582-B
AD1582-C
AD1583-A
AD1583-B
AD1583-C
AD1584-A
AD1584-B
A09 N03 MOSFET
marking B3A sot23-5
t7G SOT23-6
marking H2A sot-23
ADM2004
marking moy sot-23
A06 N03 MOSFET
SOT23-5 D2Q
M05 SOT-23
M2A MARKING SOT-23
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Untitled
Abstract: No abstract text available
Text: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor H2BIP . Tight dynamic characteristics and lot to
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BUL642D2
BUL642D2
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Untitled
Abstract: No abstract text available
Text: BUL642D2 High Speed, High Gain Bipolar NPN Transistor with Integrated Collector−Emitter and Built−in Efficient Antisaturation Network The BUL642D2 is a state−of−the−art High Speed High Gain Bipolar Transistor H2BIP . Tight dynamic characteristics and lot to
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BUL642D2
r14525
BUL642D2/D
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Untitled
Abstract: No abstract text available
Text: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot
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BUL45D2G
BUL45D2/D
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Untitled
Abstract: No abstract text available
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
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MJD18002D2
MJD18002D2
MJD18002D2/D
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02D2G
Abstract: 18002d2 motorola transistor dpak marking MJD18002D2 MJD18002D2T4 MJD18002D2T4G MPF930 MTP8P10 transistor j 127
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
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MJD18002D2
MJD18002D2
MJD18002D2/D
02D2G
18002d2
motorola transistor dpak marking
MJD18002D2T4
MJD18002D2T4G
MPF930
MTP8P10
transistor j 127
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02D2G
Abstract: MJD18002D2T4G 18002d2 MJD18002D2 MJD18002D2T4 MPF930 MTP8P10 MJD18002D2 Motorola MTP12
Text: MJD18002D2 Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−In Efficient Antisaturation Network The MJD18002D2 is a state−of−the−art high speed, high gain bipolar transistor H2BIP . Tight dynamic characteristics and lot to lot
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MJD18002D2
MJD18002D2
MJD18002D2/D
02D2G
MJD18002D2T4G
18002d2
MJD18002D2T4
MPF930
MTP8P10
MJD18002D2 Motorola
MTP12
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10IF0
Abstract: No abstract text available
Text: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot
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BUL45D2G
BUL45D2/D
10IF0
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bul45d2g
Abstract: BUL45D2 MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot
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BUL45D2G
BUL45D2G
BUL45D2/D
BUL45D2
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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vce 1200 and 5 amps npn transistor to 220 pack
Abstract: BUL45D2 BUL45D2G MJE210 MPF930 MTP12N10 MTP8P10 MUR105
Text: BUL45D2 High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2 is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot
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BUL45D2
BUL45D2
BUL45D2/D
vce 1200 and 5 amps npn transistor to 220 pack
BUL45D2G
MJE210
MPF930
MTP12N10
MTP8P10
MUR105
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Untitled
Abstract: No abstract text available
Text: BUL45D2G High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector−Emitter Diode and Built−in Efficient Antisaturation Network The BUL45D2G is state−of−art High Speed High gain BiPolar transistor H2BIP . High dynamic characteristics and lot−to−lot
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BUL45D2G
BUL45D2G
BUL45D2/D
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TRANSISTOR AH-16
Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126
TRANSISTOR AH-16
TRANSISTOR bH-16
equivalent of transistor bc212 bc 214
transistor marking code SOT-23 2FX
2907A PNP bipolar transistors
SILICON TRANSISTOR FS 2025
marking JV SOD323
bf245 replacement
GI 312 diode
msd601
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CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126/D
CBF493S
BC337 hie hre hfe
BC449 equivalent
transistor marking code SOT-23 2FX
marking 513 SOD-323
bc213 equivalent
MECL 10000
bc237c equivalent
diode Marking code jv3 f
BAV70 SOT-23 JJ
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marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further
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DL126/D
Nov-2001
r14525
DL126/D
marking 513 SOD-323
transistor marking code SOT-23 2FX
BC449 equivalent
DTD113
BC548 hie hre hfe steel package
MPSW45A replacement
BC449A equivalent
2n4401 free transistor equivalent book
power tmos
BF256
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MOTOROLA DATE CODE MARKING
Abstract: marking H2A sot-23 marking A6f sot23 marking A6L sot23 Transistor marking p2
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Bias Resistor Transistor MMUN2111LT1 SERIES PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network Motorola Preferred Devices This new series of digital transistors is designed to replace a single device and its
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OT-23
MOTOROLA DATE CODE MARKING
marking H2A sot-23
marking A6f
sot23 marking A6L
sot23 Transistor marking p2
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Untitled
Abstract: No abstract text available
Text: TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
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TPC6502
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TPC6502
Abstract: No abstract text available
Text: TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-Speed Switching Applications DC-DC Converter Applications Strobe Applications • Unit: mm High DC current gain: hFE = 400 to 1000 IC = 0.3 A • Low collector-emitter saturation voltage: VCE (sat) = 0.14 V (max)
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TPC6502
TPC6502
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169d
Abstract: MCR100 NCR169D NCR169DRLRA NCR169DRLRM
Text: NCR169D Advance Information General Purpose Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor http://onsemi.com PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate
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NCR169D
O-226AA
NCR169D,
r14525
NCR169D/D
169d
MCR100
NCR169D
NCR169DRLRA
NCR169DRLRM
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169d
Abstract: marking code onsemi MCR100 NCR169D NCR169DG NCR169DRLRA NCR169DRLRAG NCR169DRLRM NCR169DRLRMG
Text: NCR169D General Purpose Sensitive Gate Silicon Controlled Rectifier Reverse Blocking Thyristor http://onsemi.com PNPN device designed for line-powered general purpose applications such as relay and lamp drivers, small motor controls, gate drivers for larger thyristors, and sensing and detection circuits.
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NCR169D
O-226AA
NCR169D,
NCR169D/D
169d
marking code onsemi
MCR100
NCR169D
NCR169DG
NCR169DRLRA
NCR169DRLRAG
NCR169DRLRM
NCR169DRLRMG
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SMA marking code LG
Abstract: MPS3904 MPS3904RLRA radial leaded TVS Motorola Master Selection Guide
Text: Tape and Reel Specifications and Packaging Specifications Page Tape and Reel Specifications . . . . . . . . . . . . . . . . . . . 5.12–2 Embossed Tape and Reel Ordering Information . 5.12–3 Embossed Tape and Reel Data for Discretes . . . 5.12–4 Lead Tape Packaging Standards
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KAI-02150
Abstract: No abstract text available
Text: KAI-02150 IMAGE SENSOR 1920 H X 1080 (V) INTERLINE CCD IMAGE SENSOR MAY 29, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 4.1 PS-0007 KAI-02150 Image Sensor TABLE OF CONTENTS Summary Specification . 5
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KAI-02150
PS-0007
4H2141
4H2142:
4H2292
KAI-02150-CBA-JB-B2-T
PS-0007
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Untitled
Abstract: No abstract text available
Text: KAI-02050 IMAGE SENSOR 1600 H X 1200 (V) INTERLINE CCD IMAGE SENSOR MAY 29, 2014 DEVICE PERFORMANCE SPECIFICATION REVISION 6.1 PS-0006 KAI-02050 Image Sensor TABLE OF CONTENTS Summary Specification . 5
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KAI-02050
PS-0006
4H2218
4H2219:
4H2308
KAI-02050-CBA-JB-B2-T
PS-0006
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inverter circuit dc to dc 2V to 100V
Abstract: marking 3t1 TOSHIBA FL INVERTER TPC6502
Text: TOSHIBA TPC6502 TOSHIBA Transistor Silicon NPN Epitaxial Type TPC6502 High-speed Switching Applications DC-DC Converter Applications DC-AC Inverter Applications • High DC current gain: hF E = 400 to 1000 IC=0.3A Low collector-emitter saturation voltage : VCE(sat)~ 0.14V (max)
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TPC6502
hFE-400
120ns
inverter circuit dc to dc 2V to 100V
marking 3t1
TOSHIBA FL INVERTER
TPC6502
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Untitled
Abstract: No abstract text available
Text: V“> i tufcWIHG MAj I IN .AMIR I cam p ROIJCc t io m Mp" | * l « H T s N C S E R V K D . AMR PftO O U G Tt 12*231323 aaiprani . W EUfU «V PA TSH TS AMO/OR yp.iji'y j i i Revisions V W W M T I Y W BtlPAlfa Nuecniii ni •W W W JI TVIK W B3K H RMVN NVOK
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S3L22
1-00Z-01
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