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    MARKING H11 SOT Search Results

    MARKING H11 SOT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TC75S102F Toshiba Electronic Devices & Storage Corporation Operational Amplifier, 1.5V to 5.5V, I/O Rail to Rail, IDD=0.27μA, SOT-25 Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    TCR2EF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation
    TCR2LF18 Toshiba Electronic Devices & Storage Corporation LDO Regulator, Fixed Output, 1.8 V, 200 mA, SOT-25 (SMV) Visit Toshiba Electronic Devices & Storage Corporation

    MARKING H11 SOT Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    marking h11

    Abstract: 2SJ166 Marking H11 sot
    Text: MOSFET SMD Type MOS Fied Effect Transistor 2SJ166 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 input impedance. 1 0.55 Not necessary to consider dreving current because of its high +0.1 1.3-0.1 +0.1 2.4-0.1 Directly driven by Ics having a 5V poer supply.


    Original     		PDF 2SJ166 OT-23 -20mA marking h11 2SJ166 Marking H11 sot

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors UMH11N General purpose transistors dual transistors SOT-363 FEATURES z Two DTC114E chip in a package z Mounting possible with SOT-363 automatic mounting machines z Transistor elements are independent, eliminating interference


    Original     		PDF OT-363 UMH11N OT-363 DTC114E 10mA/0 100MHz

    Untitled

    Abstract: No abstract text available
    Text: UMH11N DUAL Digital Transistor NPN+NPN Small Signal Product SOT-363 Features ◇ Epitaxial planar die construction ◇ Surface device type mounting ◇ Moisture sensitivity level 1 ◇ Pb free version and RoHS compliant ◇ Two DTC114E chip in a package ◇ Mounting possible with SOT-363 automatic mounting machines


    Original     		PDF UMH11N OT-363 DTC114E OT-363 MIL-STD-202,

    CHDTC114E

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHEMH11PT SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.


    Original     		PDF CHEMH11PT OT-563) OT-563 CHDTC114E 100OC -40OC 50m100m

    CHEMH11GP

    Abstract: No abstract text available
    Text: CHENMKO ENTERPRISE CO.,LTD CHEMH11GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. SOT-563 * High current gain.


    Original     		PDF CHEMH11GP OT-563) OT-563 CHDTC114E 100OC -40OC 50m100m CHEMH11GP

    UMH11N

    Abstract: marking h11 H11 sot-363 DTC114E
    Text: UMH11N NPN Multi-Chip Built-in Resistors Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 Features .055 1.40 .047(1.20) * Mounting possible with UMT3 automatic mounting machines. o 8 o .026TYP (0.65TYP) .021REF (0.525)REF * Transistor elements are independent,


    Original     		PDF UMH11N OT-363 026TYP 65TYP) 021REF DTC114E 01-Jan-2006 UMH11N marking h11 H11 sot-363

    dtc114e

    Abstract: H11 sot-363
    Text: MCC TM Micro Commercial Components UMH11N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Two DTC114E Chips in SOT-363 Package. Transistor elements are independent, eliminating interference


    Original     		PDF UMH11N DTC114E OT-363 OT-363 H11 sot-363

    H11 sot-363

    Abstract: marking h11 dtc114e
    Text: MCC TM Micro Commercial Components UMH11N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Two DTC114E Chips in SOT-363 Package. Transistor elements are independent, eliminating interference


    Original     		PDF UMH11N DTC114E OT-363 OT-363 H11 sot-363 marking h11

    dtc114e

    Abstract: UMH11
    Text: MCC TM Micro Commercial Components UMH11N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Two DTC114E Chips in SOT-363 Package. Transistor elements are independent, eliminating interference


    Original     		PDF UMH11N DTC114E OT-363 150customers UMH11

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components UMH11N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Two DTC114E Chips in SOT-363 Package.


    Original     		PDF UMH11N DTC114E OT-363

    sc70 marking 3Q

    Abstract: MPS 425 5 pin sc70 marking 3Q LMBTH10QWT1
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10QWT1 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc 2 SC-70/SOT-323


    Original     		PDF LMBTH10QWT1 SC-70/SOT-323 LMBTH10QW SC-70 OT-323 LMBTH10QW-4/5 sc70 marking 3Q MPS 425 5 pin sc70 marking 3Q LMBTH10QWT1

    MPS 425

    Abstract: LMBTH10WT1
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10WT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc SC-70/SOT–323


    Original     		PDF LMBTH10WT1 SC-70/SOT LMBTH10W SC-70 OT-323 LMBTH10WT1-5/5 MPS 425 LMBTH10WT1

    LMBTH10QLT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23


    Original     		PDF LMBTH10QLT1 OT-23 LMBTH10QLT1-5/5 LMBTH10QLT1

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead Pb -Free 1 1 BASE FEATURES: 2 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (TA=25°C Unlesso therwise noted) Rating Symbol Value Unit


    Original     		PDF MMBTH10W OT-323 SC-70) 10-Jun-2011 OT-323

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10PLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 20 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23


    Original     		PDF LMBTH10PLT1 OT-23 LMBTH10PLT1-5/5

    Untitled

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 LMBTH10QLT1 COLLECTOR 1 BASE 3 2 EMITTER MAXIMUM RATINGS Rating 1 Symbol Value Unit CEO 25 Vdc Vdc Vdc Collector–Emitter Voltage V Collector–Base Voltage V CBO 30 Emitter–Base Voltage V EBO 3.0 2 SOT-23


    Original     		PDF LMBTH10QLT1 OT-23 LMBTH10QLT1-5/5

    LMBTH10LT1

    Abstract: No abstract text available
    Text: LESHAN RADIO COMPANY, LTD. VHF/UHF Transistors 3 COLLECTOR LMBTH10LT1 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS Rating 2 Symbol Value Unit Collector–Emitter Voltage V CEO 25 Vdc Collector–Base Voltage V CBO 30 Vdc Emitter–Base Voltage V EBO 3.0 Vdc SOT–23


    Original     		PDF LMBTH10LT1 OT-23 LMBTH10LT1

    Untitled

    Abstract: No abstract text available
    Text: MCC TM Micro Commercial Components UMH11N   omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • Halogen free available upon request by adding suffix "-HF" Two DTC114E Chips in SOT-363 Package.


    Original     		PDF UMH11N DTC114E OT-363

    MARKING H11

    Abstract: No abstract text available
    Text: EMH11 / UMH11N / IMH11A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 10kW 10kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH11 (SC-107C)


    Original     		PDF EMH11 UMH11N IMH11A 100mA EMH11 SC-107C) OT-353 SC-88) MARKING H11

    Untitled

    Abstract: No abstract text available
    Text: EMH11 / UMH11N / IMH11A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) (6) 50V 100mA 10kW 10kW (5) (5) (4) (4) (1) (1) (2) (2) (3) (3) EMH11 (SC-107C)


    Original     		PDF EMH11 UMH11N IMH11A 100mA 100mA EMH11 SC-107C) UMH11N OT-353 SC-88)

    Untitled

    Abstract: No abstract text available
    Text: EMH11 / UMH11N / IMH11A Datasheet NPN 100mA 50V Complex Digital Transistors Bias Resistor Built-in Transistors lOutline Parameter VCC IC(MAX.) R1 R2 Tr1 and Tr2 EMT6 UMT6 (6) 50V 100mA 10kW 10kW (1) (2) (6) (5) (4) (1) (3) EMH11 (SC-107C) SMT6 lFeatures


    Original     		PDF EMH11 UMH11N IMH11A 100mA 100mA EMH11 SC-107C) DTC114E R1120A

    MMBTH10M3T5G

    Abstract: marking AJ Marking code mps MMBTH10M3
    Text: MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount


    Original     		PDF MMBTH10M3T5G MMBTH10M3T5G OT-23 OT-723 MMBTH10M3/D marking AJ Marking code mps MMBTH10M3

    Untitled

    Abstract: No abstract text available
    Text: MMBTH10M3T5G NPN VHF/UHF Transistor The MMBTH10M3T5G device is a spin−off of our popular SOT−23 three−leaded device. It is designed for general purpose VHF/UHF applications and is housed in the SOT−723 surface mount package. This device is ideal for low−power surface mount


    Original     		PDF MMBTH10M3T5G MMBTH10M3T5G MMBTH10M3/D

    transistor marking code 3EM SOT-23

    Abstract: NSVMMBTH10 MMBTH10LT1G MMBTH10-4LT1G transistor marking 3em transistor 3em Marking code mps
    Text: MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G VHF/UHF Transistor http://onsemi.com NPN Silicon Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring SOT−23 TO−236 CASE 318 STYLE 6


    Original     		PDF MMBTH10LT1G, NSVMMBTH10LT1G, MMBTH10LT3G, MMBTH10-4LT1G AEC-Q101 OT-23 O-236) MMBTH10LT1/D transistor marking code 3EM SOT-23 NSVMMBTH10 MMBTH10LT1G transistor marking 3em transistor 3em Marking code mps