siemens sirius 3r
Abstract: Sprecher Schuh CT 3-12 plotter ip-220 Transformer zkb Sirius 3SB3 sti es 1682 IP220 Legrand symbol electric manual legrand
Text: Terminal Markers 4 Terminal Markers Almost any marking task involving any type of terminal block can be tackled using the Weidmüller range of terminal markers. Whether a clamping point needs multicharacter marking, ready-to-use markers with standard or custom printing, white or
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RF50C
Abstract: RF16C 12w marking MARKING EU RF25 RF50 T26A T52A
Text: DPBUJOTVMBUFEGVTJOHSFTJTUPST EU /&8 GFBUVSFT s Functions as a resistor in normal condition s Quick fusing protects circuit from excessive overload at an abnormal time s Flame-retardant coating with non-flammable paint recognized by UL94 V-0 s Marking: Blue body color with color code marking
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Untitled
Abstract: No abstract text available
Text: Surface Mount Fuses Thin Film > 0402 Size > Very Fast-Acting > 435 Series Pb RoHS 435 Series Fuse ® Description GVTFT5IFJSVMUSBTNBMMTJ[F TJ[F NBLFTUIFNJEFBMGPS
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E10480
com/series/435
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TL 435
Abstract: No abstract text available
Text: Surface Mount Fuses Thin Film > 0402 Size > Very Fast-Acting > 435 Series Pb 435 Series Fuse ® Description GVTFT5IFJSVMUSBTNBMMTJ[F TJ[F NBLFTUIFNJEFBMGPS
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E10480
35BQFBOE3FFM
com/series/435
TL 435
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marking code TS
Abstract: TL 435 marking CODE 001 MARKING CODE TL marking code 4A
Text: Surface Mount Fuses Thin Film > 0402 Size > Very Fast-Acting > 435 Series 435 Series Fuse Description GVTFT5IFJSVMUSBTNBMMTJ[F TJ[F NBLFTUIFNJEFBMGPS
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E10480
com/series/435
marking code TS
TL 435
marking CODE 001
MARKING CODE TL
marking code 4A
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GVT71128B32
Abstract: GALVANTECH marking adv
Text: ADVANCE INFORMATION GALVANTECH, INC. GVT71128B32 128K X 32 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM FLOW-THROUGH 128K x 32 SRAM +3.3V SUPPLY WITH CLOCKED, REGISTERED INPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71128B32
GVT71128B32
072x32
access/12ns
100-pin
GALVANTECH
marking adv
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Untitled
Abstract: No abstract text available
Text: Surface Mount Fuses NANO2 > 250V > Time Lag > 443 Series 443 Series Fuse ® Description
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E10480
35BQFBOE3FFM
com/series/443
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Untitled
Abstract: No abstract text available
Text: Surface Mount Fuses NANO2 > 250V > Time Lag > 443 Series 443 Series Fuse Description
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E10480
AC250V
com/series/443
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Untitled
Abstract: No abstract text available
Text: Surface Mount Fuses NANO2 > 250V > Time Lag > 443 Series 443 Series Fuse Description
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E10480
AC250V
com/series/443
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Q65111A3112
Abstract: No abstract text available
Text: MULTILED Data Sheet Version 1.0 LRTB GVTG Das Bauteil ist speziell für den Einsatz in Vollfarb-Videoleinwänden entwickelt worden. Die 6-lead Technologie läßt eine unahängige Ansteuerung aller Chips zu und bietet dadurch eine additive Farbmischung. This device is especially designed for full color
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aa11
Abstract: marking A00
Text: ADVANCE INFORMATION GALVANTECH, INC. GVT71512D36 512K X 36 SYNCHRONOUS BURST SRAM SYNCHRONOUS BURST SRAM PIPELINED OUTPUT 512K x 36 SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS, BURST COUNTER FEATURES GENERAL DESCRIPTION • • • • • The Galvantech Synchronous Burst SRAM family
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GVT71512D36
GVT71512D36
288x36
aa11
marking A00
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GVT73512A8
Abstract: No abstract text available
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +3.3V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT73512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,
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GVT73512A8
GVT73512A8
36-pin
73512A8
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GVT7232A8
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT7232A8 TRADITIONAL PINOUT 32K X 8 SRAM ASYNCHRONOUS SRAM 32K x 8 SRAM +5V SUPPLY, SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • The GVT7232A8 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high performance,
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GVT7232A8
GVT7232A8
7232A8
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GVT7232A8
Abstract: GALVANTECH
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT7232A8 TRADITIONAL PINOUT 32K X 8 SRAM 32K x 8 SRAM +5V SUPPLY, SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • The GVT7232A8 is organized as a 32,768 x 8 SRAM using a four-transistor memory cell with a high performance,
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GVT7232A8
GVT7232A8
7232A8
GALVANTECH
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GVT72028A4
Abstract: GVT72028A4J-10L
Text: GVT72028A4 TRADITIONAL PINOUT 256K X 4 GALVANTECH, INC. ASYNCHRONOUS SRAM 256K x 4 SRAM WITH SINGLE CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • The GVT72028A4 is organized as a 262,144 x 4 SRAM using a four-transistor memory cell with a high performance,
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GVT72028A4
GVT72028A4
ena51)
72028A4
GVT72028A4J-10L
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GVT72256A4J-10L
Abstract: 32-pin vd
Text: GALVANTECH, INC. GVT72256A4 REVOLUTIONARY PINOUT 256K X 4 ASYNCHRONOUS SRAM 256K x 4 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT72256A4 is organized as a 262,144 x 4 SRAM using a four-transistor memory cell with a high performance,
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GVT72256A4
GVT72256A4
32-pin
GVT72256A4J-10L
32-pin vd
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GVT72128A9J-10L
Abstract: No abstract text available
Text: PRELIMINARY GALVANTECH, INC. GVT72128A9 REVOLUTIONARY PINOUT 128K X 9 ASYNCHRONOUS SRAM 128K x 9 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • The GVT72128A9 is organized as a 131,072 x 9 SRAM
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GVT72128A9
GVT72128A9
36-pin
GVT72128A9J-10L
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GVT72512A8
Abstract: No abstract text available
Text: ADVANCE INFORMATION GALVANTECH, INC. GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 ASYNCHRONOUS SRAM 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM
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GVT72512A8
GVT72512A8
72512A8
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GVT72512A8
Abstract: No abstract text available
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72512A8 REVOLUTIONARY PINOUT 512K X 8 512K x 8 SRAM +5V SUPPLY REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT72512A8 is organized as a 524,288 x 8 SRAM using a four-transistor memory cell with a high performance,
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GVT72512A8
GVT72512A8
72512A8
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GVT73128A8
Abstract: 73128A8
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT73128A8 REVOLUTIONARY PINOUT 128K X 8 128K x 8 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • • • • The GVT73128A8 is organized as a 131,072 x 8 SRAM
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GVT73128A8
GVT73128A8
73128A8
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GVT73128A8
Abstract: No abstract text available
Text: GALVANTECH, INC. GVT73128A8 REVOLUTIONARY PINOUT 128K X 8 ASYNCHRONOUS SRAM 128K x 8 SRAM +3.3V SUPPLY, SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT73128A8 is organized as a 131,072 x 8 SRAM
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GVT73128A8
GVT73128A8
73128A8
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GVT72128A8
Abstract: GALVANTECH
Text: GALVANTECH, INC. ASYNCHRONOUS SRAM GVT72128A8 REVOLUTIONARY PINOUT 128K X 8 128K x 8 SRAM WITH SINGLE CHIP ENABLE REVOLUTIONARY PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • • • • The GVT72128A8 is organized as a 131,072 x 8 SRAM
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GVT72128A8
GVT72128A8
72128A8
GALVANTECH
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GALVANTECH
Abstract: GVT72024A8
Text: GALVANTECH, INC. GVT72024A8 TRADITIONAL PINOUT 128K X 8 SRAM ASYNCHRONOUS SRAM 128K x 8 SRAM WITH TWO CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTIO N • • • • • • • • The GVT72024A8 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high performance,
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GVT72024A8
GVT72024A8
32-pin
72024A8
GALVANTECH
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GVT72024A8
Abstract: Galvantech
Text: GALVANTECH, INC. GVT72024A8 TRADITIONAL PINOUT 128K X 8 SRAM ASYNCHRONOUS SRAM 128K x 8 SRAM WITH TWO CHIP ENABLE TRADITIONAL PINOUT FEATURES GENERAL DESCRIPTION • • • • • • • • The GVT72024A8 is organized as a 131,072 x 8 SRAM using a four-transistor memory cell with a high performance,
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GVT72024A8
GVT72024A8
32-pin
72024A8
Galvantech
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