SC802-06
Abstract: OA 70 diode sc802 MARKING BH7
Text: SC802-06 1 .OA SCHOTTKY BARRIER DIODE • Outline Drawing 3*02 * m / II # 3 > 1 3 5 tQ4 gU _ +04 5.1-01 I Features C\J 04 U 5 !0 4 | | 12*«* -1 Marking • Surface mount device • 9 Lo w V f • Super high speed switching • High reliability by planer design
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SC802-06
500ns,
22367TE
0D03bm
SC802-06
OA 70 diode
sc802
MARKING BH7
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GZ 34
Abstract: No abstract text available
Text: Surface Mount Zener Diodes 2W Marking Code Operating Temperature: -40o C to 150 o C Zener Voltage Range @IZT Zener Test Current Max. Zener Impedance @lZT Typical Temp. Coeff. @ IZT Min. Rev. Voltage @I R = 1 µA Maximum Regulator Current @ 45°C Package 7"/13" Reel
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2ZB10
2ZB11
2ZB12
Z2SMB30
Z2SMB33
Z2SMB36
Z2SMB39
Z2SMB43
Z2SMB47
Z2SMB51
GZ 34
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MOSFET marking Z5
Abstract: AGQT ci 555 15Z DIODE agqs ci 567 datasheet AN-994 IRL1404Z IRL1404ZL IRL1404ZS
Text: PD - 94804A IRL1404Z IRL1404ZS IRL1404ZL AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax l l l l l l HEXFET Power MOSFET D VDSS = 40V
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4804A
IRL1404Z
IRL1404ZS
IRL1404ZL
reliable23
EIA-418.
O-220AB
MOSFET marking Z5
AGQT
ci 555
15Z DIODE
agqs
ci 567 datasheet
AN-994
IRL1404Z
IRL1404ZL
IRL1404ZS
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PDF
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I-6300
Abstract: DIODE MARKING GU
Text: 1N5518 thru 1N5546 M ierosemi Corp. The dioôe experts SA N T A A N A , CA SC O TTSD ALE, A Z F o r m o re in fo rm a tio n call: 602 9 4 I-6300 FEATURES LOW VOLTAGE AVALANCHE DIODES DO-35 • LOW ZENER NOISE SPECIFIED • LOW ZENER IMPEDANCE • LOW LEAKAGE CURRENT
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1N5518
1N5546
I-6300
1N5518-1
1N5546B-1
IL-S-19500/437
DO-35
1N5546
I-6300
DIODE MARKING GU
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PDF
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11782 Revision. 3 Product Standards Zener Diode DZ2S0680L DZ2S0680L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J068 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6 Excellent rising characteristics of zener current Iz
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TT4-EA-11782
DZ2S068ï
DZ2J068
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11548 Revision. 4 Product Standards Zener Diode DZ2J0680L DZ2J0680L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz
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TT4-EA-11548
DZ2J068ï
UL-94
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HSMP-386L
Abstract: No abstract text available
Text: Surface Mount RF PIN Diodes in SOT-363 SC-70, 6 Lead Technical Data HSMP-386L HSMP-389L /R/T/U/V Features • Unique configurations in surface mount SOT-363 package – Add flexibility – Save board space – Reduce cost • Switching – Ultra low distortion switching
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OT-363
SC-70,
HSMP-386L
HSMP-389L
OT-363
HSMP-389a-TR2*
HSMP-389a-TR1*
HSMP-389a-BLK*
HSMP-386L-TR2
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MARKING CODE l0
Abstract: No abstract text available
Text: Central CMLD2004 CMLD2004A CMLD2004C CMLD2004S CMLD2004DO Semiconductor Corp. SURFACE MOUNT DUAL, HIGH VOLTAGE SILICON SWITCHING DIODES DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLD2004 SERIES contains two 2 High Voltage Silicon Switching Diodes, manufactured by the epitaxial
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CMLD2004
CMLD2004A
CMLD2004C
CMLD2004S
CMLD2004DO
MARKING CODE l0
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1N4565
Abstract: IN4568 1n4573 45B4 IN4583A 1n4572 4566A
Text: SbE ] • 7 T ST E3 7 0 0 4 1 5 3 4 T44 ■ SGTH s 6 s-thohson S G S -T H O M S O N 1 N 4 5 6 5 ,A -> 1 N 4 5 8 4 ,A TEMPERATURE COMPENSATED ZENER DIODES ■ SEMICONDUCTOR MATERIAL : SILICON ■ TECHNOLOGY : LOCAL EPITAXY + GUARD RING ABSOLUTE RATINGS limiting values)
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7TSTE37
1N4565
IN4568
1n4573
45B4
IN4583A
1n4572
4566A
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PDF
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DIODE marking 7AA
Abstract: DIODE AA 119 ci d 4800 CZ 12.01 marking A1A A7SP IRF6612 APQG 5a1av
Text: PD - 95842 IRF6612/IRF6612TR1 V&55 !V Application Specific MOSFETs l Ideal for CPU Core DC-DC Converters l Low Conduction Losses l Low Switching Losses l Low Profile <0.7 mm l Dual Sided Cooling Compatible l Compatible with existing Surface Mount Techniques
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IRF6612/IRF6612TR1
IRF6612
DIODE marking 7AA
DIODE AA 119
ci d 4800
CZ 12.01
marking A1A
A7SP
APQG
5a1av
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TLP590B TOSHIBA PHOTOCOUPLER TELECOMMUNICATION PROGRAMMABLE CONTROLLERS MOS GATE DRIVER MOS FET GATE DRIVER GaA€As IRED & PHOTO-DIODE ARRAY TLP590B Unit in mm The TOSHIBA TLP590B consists of an aluminum galium arsenide infrared emitting diode optically coupled to a series connected photo
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TLP590B
TLP590B
UL1577,
E67349
12juA
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PDF
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Untitled
Abstract: No abstract text available
Text: SMA4306 Ordering number : ENA1771A SANYO Semiconductors DATA SHEET Si Monolithic Linear IC SMA4306 Oscillator IC for Laser Diode Noise Suppression Applications Features • • • Frequency specification with LC : Added LC sets the operating frequency Ultra small package : 1.6x1.6×0.56mm
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SMA4306
ENA1771A
A1771-4/4
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a1771
Abstract: SMA4306
Text: SMA4306 Ordering number : ENA1771 SANYO Semiconductors DATA SHEET Si Monolithic Linear IC SMA4306 Oscillator IC for Laser Diode Noise Suppression Applications Features • • • Frequency specification with LC : Added LC sets the operating frequency Ultra small package : 1.6x1.6×0.56mm
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ENA1771
SMA4306
A1771-4/4
a1771
SMA4306
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Diode 5A
Abstract: bkd marking TMPD4148 TMPD2835 TMPD2837 TMPD2838 TMPD4150 TMPD4153 TMPD4154 TMPD459
Text: AL LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 SP RA GU E. INC T3 D • DSGM33Ô S E M I C O N D S / ICS 0GD3b5? 93 D 0 3 6 2 7 1 *ALGR V T'Q / ~ 9 0 SMALL-OUTLINE DIODES j ‘TMPD’ General-Purpose and Low-Leakage Diodes ELECTRICAL CHARACTERISTICS at TA = 25°C
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DSGM33Ã
TMPD459
TMPD914
TMPD2835
TMP02836
TMPD2837
TMPD2838
TMPD4148
TMPD4153
TMPD4154
Diode 5A
bkd marking
TMPD4150
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Untitled
Abstract: No abstract text available
Text: SMA4306 Ordering number : ENA1771B SANYO Semiconductors DATA SHEET Si Monolithic Linear IC SMA4306 Oscillator IC for Laser Diode Noise Suppression Applications Features • • • Frequency specification with LC : Added LC sets the operating frequency Ultra small package : 1.6x1.6×0.56mm
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SMA4306
ENA1771B
702etc.
A1771-6/6
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PDF
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Untitled
Abstract: No abstract text available
Text: SMA4306 Ordering number : ENA1771B SANYO Semiconductors DATA SHEET Si Monolithic Linear IC SMA4306 Oscillator IC for Laser Diode Noise Suppression Applications Features • • • Frequency specification with LC : Added LC sets the operating frequency Ultra small package : 1.6x1.6×0.56mm
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SMA4306
ENA1771B
702etc.
A1771-6/6
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP3502A TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TI P ^ i 1 7 A Unit in mm TRICA DRIVER PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY The TOSHIBA TLP35Q2A consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a 8 lead plastic DIP
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TLP3502A
TLP35Q2A
2500Vrms
UL1577,
E67349
11-10C3_
100Hz
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP3502A TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRIAC TI P ^ i 1 7 A Unit in mm TRICA DRIVER PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY The TOSHIBA TLP35Q2A consists of a photo-triac optically coupled to a gallium arsenide infrared emitting diode in a 8 lead plastic DIP
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TLP3502A
TLP35Q2A
2500Vrms
E67349
11-10C3_
100Hz
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PDF
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Untitled
Abstract: No abstract text available
Text: TO SHIBA TLP296G TENTATIVE TOSHIBA PHOTOCOUPLER PHOTO RELAY T L P29 6G TELECOMMUNICATION DATA ACQUISITION M F A il JRFMFMT INKTRl IM FM T A T IO W The T U SJrL lB A consists of gallium arsenide infrared em itting diode optically coupled to a photo-MOS FET in a 8 lead DIP
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TLP296G
TLP296G
100mA
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PDF
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B6025L
Abstract: B6030L B6020L MBR6030L B6015L BR6020L BR6030L mbr6015l
Text: MOTOROLA S E M IC O N D U C T O R TECHNICAL DATA M BR6015L M BR6020L M BR6025L M BR6030L S w it c h m o d e P o w e r R e ctifie rs . . using a platinum barrier metal in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal
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BR6015L
BR6020L
BR6025L
BR6030L
BR6030L
B6025L
B6030L
B6020L
MBR6030L
B6015L
mbr6015l
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PDF
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TS01 TRIAC
Abstract: No abstract text available
Text: TOSHIBA TLP3530 TENTATIVE TOSHIBA PHOTOCOUPLER Ti • p ■ GaAs IRED & PHOTO-TRIAC 3 ç 3n V HT MT V TRIAC DRIVER U nit in mm PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE SOLID STATE RELAY The TOSHIBA TLP3530 consists of a photo-triac optically coupled to a gallium arsenide infrared em itting diode in a 16 lead plastic DIP
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TLP3530
TLP3530
2500Vrms
115tS
100Hz
TS01 TRIAC
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PDF
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BAS40
Abstract: AK 1020 DIODE MARKING GU RAG SOT23
Text: Surface Mount Schottky Barrier Diode BAS40 Features Low Turn-on Voltage Low Forward Voltage - 0.5V Max @ IF = 30 mA Very Low Capacitance - Less Than 5.0pF @ 1V For high speed switching application, circuit protection A 3 Mechanical Data 1 Case: Molded Plastic
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BAS40
MIL-STD-202,
OT-23
BAS40
AK 1020
DIODE MARKING GU
RAG SOT23
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PDF
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Untitled
Abstract: No abstract text available
Text: Schottky Barrier Diode Diode Module Wtm D360SC6M OUTLINE 60V 360A Feature V 3. —I \j • • f iV • High lo Rating-M odule-PKG • Low V f f • Sm all B jc Main Use • High Po w er S w itching Regulator • D C / D C Z \ y jï- S • S ’ • IC x X i?
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D360SC6M
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PDF
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ST BYT13
Abstract: byt13 BYT13-600 BYT 13
Text: BYT 13-600 →1000 FAST RECOVERY RECTIFIER DIODES SOFT RECOVERY VERY HIGH VOLTAGE SMALL RECOVERY CHARGE APPLICATIONS ANTISATURATION DIODES FOR TRANSISTOR BASE DRIVE SNUBBER DIODES DO-201AD Plastic ABSOLUTE MAXIMUM RATINGS (limiting values) Symbol Parameter
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DO-201AD
ST BYT13
byt13
BYT13-600
BYT 13
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