B12 GDM
Abstract: BYS045 GENERAL SEMICONDUCTOR MARKING SJ SMA s104 68A BYS-045 kvp 62a GENERAL SEMICONDUCTOR MARKING mJ SMA ED BYS209 S4 68A S104 8a
Text: PDD Marking Vishay General Semiconductor PDD Marking AXIAL MARKING Cathode Band Polarity GP15M 0621X Cathode Band Part Number Logo/Date Code Polarity SB340 0621X Part Number/ Date Code/Logo DATE CODE DATE CODE 06 21 X 06 21 X Factory Designator DO-204AC/ DO-204AL
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GP15M
0621X
SB340
DO-204AC/
DO-204AL
DO-201AD/
P600/MPG06
MPG06
VTS40100CT
B12 GDM
BYS045
GENERAL SEMICONDUCTOR MARKING SJ SMA
s104 68A
BYS-045
kvp 62a
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
BYS209
S4 68A
S104 8a
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GENERAL SEMICONDUCTOR MARKING mJ SMA ED
Abstract: kvp 62a kvp 82a GFM 51A S4 68A GENERAL SEMICONDUCTOR MARKING SJ SMA 6V8C BFM 62A kvp 75a GFM 16A
Text: PPD Marking Vishay Semiconductors formerly General Semiconductor Axial Marking GS Part Number Cathode Band GP15M 0308 GS Part Number 1N4005 GP 0308 GP15M Logo/Date Code GS Logo Subject to Change Polarity Cathode Band 1N4005/Logo (GS Logo Subject to Change)
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GP15M
1N4005
1N4005/Logo
DO-204AC
24-Jun-04
DO-204AL
GENERAL SEMICONDUCTOR MARKING mJ SMA ED
kvp 62a
kvp 82a
GFM 51A
S4 68A
GENERAL SEMICONDUCTOR MARKING SJ SMA
6V8C
BFM 62A
kvp 75a
GFM 16A
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
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Untitled
Abstract: No abstract text available
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G 3 FEATURE ƽ Pb-Free Package is available. 1 DEVICE MARKING AND ORDERING INFORMATION Device 2 SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
195mm
150mm
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LBSS123LT1G
Abstract: LBSS123LT3G
Text: LESHAN RADIO COMPANY, LTD. N-CHANNEL POWER MOSFET LBSS123LT1G LBSS123LT1G FEATURE 3 ƽ Pb-Free Package is available. 1 2 DEVICE MARKING AND ORDERING INFORMATION Device SOT-23 Marking Shipping LBSS123LT1G SA 3000/Tape&Reel LBSS123LT3G SA 10000/Tape&Reel 1 Gate
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LBSS123LT1G
OT-23
3000/Tape
LBSS123LT3G
10000/Tape
195mm
150mm
LBSS123LT1G
LBSS123LT3G
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intersil DATE CODE MARKING
Abstract: No abstract text available
Text: U401/SST401 Series Ordering and Part Marking Information 3/22/11 SUBJECT: U401/SST401 Series Ordering and Part Marking Information The U401/SST401 Series Dual N-Channel JFET Amplifiers are offered in a TO-71, 6 lead package and includes the following part numbers: U401, U402, U403, U404, U405, U406
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U401/SST401
SST401,
SST402,
SST403,
SST404,
SST405,
SST406
intersil DATE CODE MARKING
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Q62702-F1372
Abstract: No abstract text available
Text: Silicon N Channel MOS FET Triode BF 543 Preliminary Data ● For RF stages up to 300 MHz preferably in FM applications ● IDSS = 4 mA, gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code tape and reel
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Q62702-F1372
OT-23
Q62702-F1372
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STK730FC
Abstract: KST-H014-000 STK730 AUK auk stk730
Text: . STK730FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. Marking Package Code STK730FC STK730
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STK730FC
STK730
O-220F-3SL
KST-H014-000
STK730FC
KST-H014-000
STK730 AUK
auk stk730
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STK730F
Abstract: KST-H037-000
Text: STK730F . Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Improved gate charge. • Low leakage current : 10uA Max. @ VDS=400V. Ordering Information Type NO. STK730F Marking STK730 Outline Dimensions
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STK730F
STK730
O-220F
KST-H037-000
STK730F
KST-H037-000
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2N4416A
Abstract: No abstract text available
Text: 2N4416 2N4416A Central TM Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE: Full Part Nmber
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2N4416
2N4416A
610-2N4416A
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2n4416 transistor
Abstract: 2N4416A TM2N4416 300300 5007 5MA1 2N4416 "N-Channel JFET"
Text: 2N4416 2N4416A Central TM Semiconductor Corp. N-CHANNEL JFET DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N4416 and 2N4416A are silicon N-Channel Junction Field Effect Transistors designed for VHF amplifier and mixer applications. MARKING CODE: Full Part Nmber
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2N4416
2N4416A
2N4416
2N4416A
2n4416 transistor
TM2N4416
300300
5007
5MA1
"N-Channel JFET"
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sot143 sot343
Abstract: No abstract text available
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
BF2040R
BF2040W
OT143
OT343
BF2040,
BF2040W
sot143 sot343
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E6327
Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
OT143
BF2040R
BF2040W
OT343
E6327
DIN 6784
BF2040
BF2040R
BF2040W
BFP181
BGA420
sot143 marking code G2
p 1S marking SOT143
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BF2040
Abstract: BF2040R BF2040W sot143 sot343
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
OT143
BF2040R
BF2040W
OT343
BF2040
BF2040R
BF2040W
sot143 sot343
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p 1S marking SOT143
Abstract: No abstract text available
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
BF2040R
BF2040W
OT143
OT343
BF2040,
BF2040W
p 1S marking SOT143
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Untitled
Abstract: No abstract text available
Text: CHENMKO ENTERPRISE CO.,LTD CHM1273PT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 2 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SOT-23 FEATURE MARKING .066 1.70
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CHM1273PT
OT-23
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BF2040W
Abstract: No abstract text available
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
OT143
BF2040R
BF2040W
OT343
BF2040W
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mosfet marking code gg
Abstract: No abstract text available
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
BF2040R
BF2040W
OT143
OT143R
OT343
BF2040,
BF2040W
mosfet marking code gg
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Untitled
Abstract: No abstract text available
Text: STK630F Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=200V. • Low RDS(on) : 0.30Ω(Typ.) Ordering Information Type NO. Marking STK630F STK630 Outline Dimensions
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STK630F
STK630
O-220F-3L
KST-H036-002
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STK630
Abstract: No abstract text available
Text: STK630FC Semiconductor Advanced Power MOSFET Features • Avalanche rugged technology. • • • • Low input capacitance. Improved gate charge. Low leakage current : 10uA Max. @ VDS=200V. Low RDS(ON) : 0.30Ω(Typ.) Ordering Information Type NO. Marking
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STK630FC
STK630
O-220F-3SL
KST-H025-001
STK630
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BF2040
Abstract: BF2040R BF2040W 1V66
Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040
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BF2040.
BF2040
OT143
BF2040R
BF2040W
OT343
Feb-25-2004
BF2040
BF2040R
BF2040W
1V66
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STK730
Abstract: STK730 AUK auk stk730
Text: STK730F . Semiconductor Power MOSFET Features • Avalanche rugged technology. • Low input capacitance. • Low leakage current : 10 ㎂ Max. @ VDS=400V. • Low RDS(ON) : 0.7Ω(Typ.) Ordering Information Type NO. STK730F Marking STK730 Outline Dimensions
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STK730F
STK730F
STK730
O-220F-3L
KST-H037-001
STK730 AUK
auk stk730
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TRANSISTOR 131-6 BJ 946
Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise
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B3-B3715
B3715-X-X-7600
TRANSISTOR 131-6 BJ 946
transistor bc 564
transistor Bc 949 datenblatt
TRANSISTOR BC 545
MARKING CODE AGS bsp 2000
siemens datenbuch
bft99
mmic SMD amplifier marking code 19s
TRANSISTOR SMD MARKING CODE bc ru
DIODE smd marking 22-16
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smcj15a
Abstract: 710 gee marking GFQ marking code GDD SMCJ8.5A 218 GFM 218 Gex GEX 610
Text: 3DT ELECTRICAL CHARACTERISTICS TA=25°C unless otherwise noted Device Type Modified "J" Bend Lead Device Marking Code Breakdown Voltage (Volts) (Note 1) (MIN / MAX) SMCJ5.0 SMCJ5.0A SMCJ6.0 SMCJ6.0A SMCJ6.5 SMCJ6.5A SMCJ7.0 SMCJ7.0A SMCJ7.5 SMCJ7.5A SMCJ8.0
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SMCJ10
SMCJ10A
SMCJ11
SMCJ11A
SMCJ12
SMCJ12A
SMCJ13
SMCJ13A
SMCJ14
SMCJ14A
smcj15a
710 gee
marking GFQ
marking code GDD
SMCJ8.5A
218 GFM
218 Gex
GEX 610
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