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    MARKING G1S Search Results

    MARKING G1S Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    5962-8950303GC Rochester Electronics LLC ICM7555M - Dual Marked (ICM7555MTV/883) Visit Rochester Electronics LLC Buy
    54HC221AJ/883C Rochester Electronics LLC 54HC221AJ/883C - Dual marked (5962-8780502EA) Visit Rochester Electronics LLC Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy

    MARKING G1S Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TRANSISTOR 131-6 BJ 946

    Abstract: transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16
    Text: Typeniibersicht Selection Guide Bestellnummern Ordering Codes Bestempelung Marking Catalog Technische Angaben « Technical Information Qualitatsangaben Quality Specification Gehause Package Outlines Verarbeitungshinweise Mounting Instructions Verpackungshinweise


    OCR Scan     		B3-B3715 B3715-X-X-7600 TRANSISTOR 131-6 BJ 946 transistor bc 564 transistor Bc 949 datenblatt TRANSISTOR BC 545 MARKING CODE AGS bsp 2000 siemens datenbuch bft99 mmic SMD amplifier marking code 19s TRANSISTOR SMD MARKING CODE bc ru DIODE smd marking 22-16 PDF

    sot143 sot343

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 BF2040R BF2040W OT143 OT343 BF2040, BF2040W sot143 sot343 PDF

    E6327

    Abstract: DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 OT143 BF2040R BF2040W OT343 E6327 DIN 6784 BF2040 BF2040R BF2040W BFP181 BGA420 sot143 marking code G2 p 1S marking SOT143 PDF

    BF2040

    Abstract: BF2040R BF2040W sot143 sot343
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040 BF2040R BF2040W sot143 sot343 PDF

    p 1S marking SOT143

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 BF2040R BF2040W OT143 OT343 BF2040, BF2040W p 1S marking SOT143 PDF

    BF2040W

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 OT143 BF2040R BF2040W OT343 BF2040W PDF

    mosfet marking code gg

    Abstract: No abstract text available
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 BF2040R BF2040W OT143 OT143R OT343 BF2040, BF2040W mosfet marking code gg PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2040W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    OCR Scan     		Q62702-F1776 OT-343 PDF

    BF2040

    Abstract: BF2040R BF2040W 1V66
    Text: BF2040. Silicon N-Channel MOSFET Tetrode • For low noise , high gain controlled input stages up to 1GHz • Operating voltage 5 V ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Package Pin Configuration Marking BF2040


    Original     		BF2040. BF2040 OT143 BF2040R BF2040W OT343 Feb-25-2004 BF2040 BF2040R BF2040W 1V66 PDF

    BF1009

    Abstract: 1009 Q62702-F1613
    Text: BF 1009 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		Q62702-F1613 OT-143 Jul-29-1996 BF1009 1009 Q62702-F1613 PDF

    Q62702-F1487

    Abstract: BF1012
    Text: BF 1012 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 12V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		Q62702-F1487 OT-143 Jul-29-1996 Q62702-F1487 BF1012 PDF

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BF 2030W Silicon N-Channei MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    OCR Scan     		62702-F1774 T-343 PDF

    Q62702-F1498

    Abstract: No abstract text available
    Text: BF 1005 Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		Q62702-F1498 OT-143 Jul-29-1996 Q62702-F1498 PDF

    marking code g1s

    Abstract: marking g1s marking G2s
    Text: SIEMENS BF 2030W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code


    OCR Scan     		Q62702-F1774 OT-343 marking code g1s marking g1s marking G2s PDF

    Q62702-F1628

    Abstract: No abstract text available
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		1009S Q62702-F1628 OT-143 Jul-29-1996 Q62702-F1628 PDF

    Q62702-F1628

    Abstract: marking code g1s
    Text: BF 1009S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		1009S 1009S Q62702-F1628 OT-143 200MHz Q62702-F1628 marking code g1s PDF

    marking code g2s

    Abstract: marking code g1s 1012S Q62702-F1627 sot143 marking code G2
    Text: BF 1012S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		1012S 1012S Q62702-F1627 OT-143 200MHz marking code g2s marking code g1s Q62702-F1627 sot143 marking code G2 PDF

    Q62702-F1665

    Abstract: No abstract text available
    Text: BF 1005S Silicon N-Channel MOSFET Tetrode • For low-noise, high gain-controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		1005S Q62702-F1665 OT-143 Jul-29-1996 Q62702-F1665 PDF

    F1776

    Abstract: Q62702-F1776 bf2040w marking 55 Sot-343 marking code g2s marking code g1s
    Text: BF 2040W Silicon N-Channel MOSFET Tetrode Preliminary data • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V ESD: Electrostatic discharge sensitive device, observe handling precaution Type Marking Ordering Code BF 2040W NCs


    Original     		Q62702-F1776 OT-343 Jun-05-1998 F1776 Q62702-F1776 bf2040w marking 55 Sot-343 marking code g2s marking code g1s PDF

    1012S

    Abstract: Q62702-F1627 BF1012S
    Text: BF 1012S Silicon N-Channel MOSFET Tetrode ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code PIN Configuration BF 1012S NYs 1=S Q62702-F1627 2=D Package 3 = G2 4 = G1 SOT-143 Maximum Ratings Parameter Symbol


    Original     		1012S Q62702-F1627 OT-143 Jul-29-1996 1012S Q62702-F1627 BF1012S PDF

    Q62702-F1055

    Abstract: Silicon N Channel MOSFET Tetrode
    Text: Silicon N Channel MOSFET Tetrode ● Integrated suppression network against spurious VHF oscillations ● For VHF applications, especially in TV tuners with extended VHF band, e. g. in CATV tuners BF 997 Type Marking Ordering Code tape and reel Pin Configuration


    Original     		Q62702-F1055 OT-143 Q62702-F1055 Silicon N Channel MOSFET Tetrode PDF

    Silicon N Channel MOSFET Tetrode

    Abstract: No abstract text available
    Text: SIEMENS Silicon N-Channel MOSFET Tetrode • For low-noise, gain-controlled input stages up to 1GHz • Operating voltage 9V • Integrated bias network . HF O utput + DC ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    OCR Scan     		Q62702-F1613 OT-143 800MHz Silicon N Channel MOSFET Tetrode PDF

    marking code g1s

    Abstract: Q62702-F1665
    Text: BF 1005S Silicon N-Channel MOSFET Tetrode • For low noise, high gain controlled input stages up to 1GHz • Operating voltage 5V • Integrated stabilized bias network ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code


    Original     		1005S 1005S Q62702-F1665 OT-143 200MHz marking code g1s Q62702-F1665 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3SE D • flS3b32Q QDlbflOl 2 « S I P Silicon N Channel MOSFET-Tetrode BF994S _ SIEMENS/ SPCL-i SEMICONDS _ • For VHF applications, especially for input and mixer stages with wide tuning range, e.g. In CATV tuners Type Marking Ordering code


    OCR Scan     		flS3b32Q BF994S Q62702-F963 Q62702-F1020 T-31-25 23b320 PDF