B824 transistor
Abstract: a564 transistor 335 35K 106 16k radial capacitor Thomson TH 5221 transistor a564 pc 8178 T110A335J015AS a684 transistor
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-PRF-39003/1
T111/T213
CSR91)
MIL-PRF-39003/4
CSR09)
MIL-PRF-39003/2
T140/T242
CSR23)
B824 transistor
a564 transistor
335 35K
106 16k
radial capacitor
Thomson TH 5221
transistor a564
pc 8178
T110A335J015AS
a684 transistor
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transistor a564
Abstract: a564 transistor a684 transistor CIR 2262 transistor a684 cat 7199 ca transistor b564 5252 f 0917 capacitor 336 35K 102 CSR 6026
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-C-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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T110/T212
CSR13)
MIL-C-39003/1
T111/T213
CSR91)
MIL-C-39003/4
CSR09)
MIL-C-39003/2
T140/T242
CSR23)
transistor a564
a564 transistor
a684 transistor
CIR 2262
transistor a684
cat 7199 ca
transistor b564
5252 f 0917
capacitor 336 35K 102
CSR 6026
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106 16k
Abstract: capacitor 226 35K 022 electrolytic 335 35K TANTALUM capacitor 685 35K a564 transistor T35 diode transistor a564 B824 transistor a684 transistor XC 7270
Text: INDEX Tantalum Hermetically Sealed/Axial Capacitors Military Ordering Information 4 Military Marking Information 4 Military Approval Levels 5 Performance Characteristics 5 T110/T212 CSR13 MIL-PRF-39003/1 Series Outline Drawing 6 Dimensions 6 Ordering & T110 Marking Information
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Original
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PDF
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T110/T212
CSR13)
MIL-PRF-39003/1
T111/T213
CSR91)
MIL-PRF-39003/4
CSR09)
MIL-PRF-39003/2
T140/T242
CSR23)
106 16k
capacitor 226 35K 022 electrolytic
335 35K
TANTALUM capacitor 685 35K
a564 transistor
T35 diode
transistor a564
B824 transistor
a684 transistor
XC 7270
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CCV Series
Abstract: No abstract text available
Text: Organic Conductive Polymer Capacitors CCV CCV Series Features ‧105℃, 2,000 hours assured ‧Ultra low ESR, solid capacitors of SMD type ‧RoHS Compliance Marking color: Blue Specifications Items Category Temperature Range Capacitance Tolerance Leakage Current at 20℃ *
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120Hz,
CCV Series
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Untitled
Abstract: No abstract text available
Text: CVH SMD Aluminum Electrolytic Capacitors CVH Series Features ‧4φ ~ 18φ, 105℃, 2,000 ~ 5,000 hours assured ‧Large capacitance with ultra low impedance capacitors ‧Designed for surface mounting on high density PC board ‧RoHS Compliance Marking color: Black
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120Hz,
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5800c
Abstract: bios programmer block diagram of crusoe processor TM5500-800 chip morphing TM5800 feature sdr sdram pcb layout TM5800 TM5800-733 TM5800-800
Text: TM5500/TM5800 Version 1.0 Data Book Crusoe Processors Described in this Document Processor SKU Memory Interface Package Marking L2 Cache Max Core Core Frequency Voltage Tj Max TDP DDR SDR TM5800-933 CoolRun80 DDR/SDR 5800C093310 512 KBytes 933 MHz 0.90-1.35 V
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TM5500/TM5800
TM5800-933
CoolRun80
5800C093310
TM5800-867
5800C086710
TM5800-800
5800A080010
TM5500-800
5800c
bios programmer
block diagram of crusoe processor
TM5500-800
chip morphing
TM5800 feature
sdr sdram pcb layout
TM5800
TM5800-733
TM5800-800
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bios programmer
Abstract: sdr sdram pcb layout TM5800-1000-LP processor cross reference cdq42 5800P100021 5800R100021 TM5500 TM5800 16M X 32 SDR SDRAM
Text: TM5800 Version 2.1 Data Book Crusoe Processors Described in this Document Processor Memory Package Marking L2 Cache Max Core Frequency Core Voltage TM5800-1000-ULP CoolRun80 DDR/SDR 5800T100021 512 KBytes 1000 MHz TM5800-1000-VLP CoolRun80 DDR/SDR Tj Max TDP
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TM5800
TM5800-1000-ULP
CoolRun80
5800T100021
TM5800-1000-VLP
5800N100021
TM5800-1000-LP
5800P100021
bios programmer
sdr sdram pcb layout
TM5800-1000-LP
processor cross reference
cdq42
5800R100021
TM5500
TM5800
16M X 32 SDR SDRAM
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D1477
Abstract: 2SJ185 2SK1399
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK1399 N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING DESCRIPTION PACKAGE DRAWING Unit : mm 1 3 1.1 to 1.4 +0.1 0.16 –0.06 Marking 0 to 0.1 ORDERING INFORMATION PART NUMBER PACKAGE 2SK1399 SC-59 (Mini Mold)
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2SK1399
SC-59
D1477
2SJ185
2SK1399
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block diagram of crusoe processor
Abstract: bios programmer SDR100 TM5800 TM58EL-800 crusoe "sdr sdram" design guideline TM58E SDR100 sdram dimm TM55EL-667
Text: Crusoe SE TM55E/TM58E Version 2.1 Data Book Crusoe SE Embedded Processors Described in this Document Processor SKU Memory Package Marking L2 Cache Max Core Core Frequency Voltage Temp Range TDP DDR SDR TM58EX-933 100°C DDR/SDR 58EXAE093321 512 KBytes 933 MHz
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TM55E/TM58E
TM58EX-933
58EXAE093321
TM58EL-800
58ELAD080021
TM55EL-667
55ELAC066721
TM55E/TM58E
block diagram of crusoe processor
bios programmer
SDR100
TM5800
TM58EL-800
crusoe
"sdr sdram" design guideline
TM58E
SDR100 sdram dimm
TM55EL-667
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NEC c317
Abstract: c317 nec PC317 nec 2405 NEC PC317 C317 MARKING G 3pin R20 marking transistor c317 MP-45G
Text: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUIT PC317 3-TERMINAL POSITIVE ADJUSTABLE REGULATOR PIN CONFIGURATION Marking Side DESCRIPTION μPC317HF, μPC317HF-AZ The μPC317 is an adjustable 3-terminal positive voltage regulator, which has 1.5 A capable for the output current. The output voltage
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PC317
PC317HF,
PC317HF-AZ
PC317
MP-45G)
O-220
NEC c317
c317 nec
nec 2405
NEC PC317
C317
MARKING G 3pin
R20 marking
transistor c317
MP-45G
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c337 nec
Abstract: nec 2405 pc337 NEC R18 C337 W C337 c337 transistor Usage of Three-Terminal Regulators NEC F75-100 C337 25
Text: DATA SHEET SHEET DATA BIPOLAR ANALOG INTEGRATED CIRCUIT PC337 3-TERMINAL NEGATIVE ADJUSTABLE REGULATOR PIN CONFIGURATION Marking Side DESCRIPTION μPC337HF, μPC337HF-AZ The μPC337 is an adjustable 3-terminal negative voltage regulator, which has 1.5 A for the output current. The output voltage
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PC337
PC337HF,
PC337HF-AZ
PC337
MP-45G)
O-220ems,
c337 nec
nec 2405
NEC R18
C337 W
C337
c337 transistor
Usage of Three-Terminal Regulators NEC
F75-100
C337 25
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mil-r-22097
Abstract: No abstract text available
Text: Series G12 A .75 watt single turn cermet featuring dial marking for quick adjustment. Available in top or side adjusting. Sealed to withstand wave soldering and immersion cleaning. Specifications E lectrical Environm ental Resistance Range: 1 0 il to 1M fi
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500Kil
250ppm/C°
MIL-R-22097,
mil-r-22097
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Untitled
Abstract: No abstract text available
Text: SIEMENS BFT93 PNP Silicon RF Transistor • For low distortion broadband amplifiers up to 1 GHz at collector currents from 2mA up to 20mA ESP: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration
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BFT93
Q62702-F1063
OT-23
235b05
G122211
900MHz
235fc
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Untitled
Abstract: No abstract text available
Text: SIEMENS BF 771W NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Marking Ordering Code Pin Configuration Type 1= B Q62702-F1519 Ö II CO RBs LU II CM
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Q62702-F1519
OT-323
IS21el2
G12171D
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Untitled
Abstract: No abstract text available
Text: SIEMENS PNP Silicon AF Transistors • • • • BC 327 BC 328 High current gain High collector current Low collector-emitter saturation voltage Complementary types: BC 337, BC 338 NPN Type Marking Ordering Code Q62702-C311 Q62702-C311-V3 Q62702-C311-V4
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Q62702-C311
Q62702-C311-V3
Q62702-C311-V4
Q62702-C311-V2
Q62702-C312
Q62702-C312-V3
Q62702-C312-V4
Q62702-C312-V2
A235b05
E35b05
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TRANSISTOR k 1254
Abstract: No abstract text available
Text: SIEMENS BF 771 NPN Silicon RF Transistor • For modulators and amplifiers in TV and VCR tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! Ordering Code Pin Configuration BF 771 RBs Q62702-F1225 1 =B Package II CO Marking 2= E
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Q62702-F1225
OT-23
fl535b05
G121707
TRANSISTOR k 1254
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 198W PNP Silicon Digital Transistor • Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor Ri = 47kfl, R2 = 47kQ Ordering Code Pin Configuration WRs Q62702-C2283 1= B Package 2=E o Marking BCR 198W II CO
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47kfl,
Q62702-C2283
OT-323
Thermal05
6E35b05
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Mpsa42
Abstract: mpsa 102
Text: SIEMENS NPN Silicon High-Voltage Transistors MPSA 42 MPSA 43 • High breakdown voltage • Low collector-emitter saturation voltage • Complementary types: MPSA 92 MPSA 93 PNP Type MPSA 42 MPSA 43 Marking MPSA 42 MPSA 43 Ordering Code Pin Configur ation
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Q68000-A413
Q68000-A4809
42/4J
235b05
Mpsa42
mpsa 102
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Transistors SMBT 6428 SMBT 6429 • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SMBT 6428 SMBT 6429
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Q68000-A8321
Q68000-A8322
OT-23
Tslg35bÃ
D12ES7b
P006I2
Q155577
fi235b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 512 NPN Silicon Digital Transistor >Switching circuit, inverter, interface circuit, drive circuit >Built in bias resistor R-|=4.7kfl, R2=4.7kfl 13 ET Type Marking Ordering Code Pin Configuration BCR 512 XFs Q62702-C2445 1= B Package 2=E 3=C SOT-23
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Q62702-C2445
OT-23
023SbD5
G120a
015D677
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 562 PNP Silicon Digital Transistor » Switching circuit, inverter, interface circuit, driver circuit * Built in bias resistor R1=4.7kü, R2=4.7kiì Type Marking Ordering Code Pin Configuration BCR 562 XUs Q62702-C2356 1=B Package 2=E 3=C SOT-23
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Q62702-C2356
OT-23
a23SbOS
G12CH03
QE35b05
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Untitled
Abstract: No abstract text available
Text: S IE M E N S BF 775W NPN Silicon RF Transistor • Especially suitable for TV-sat and UHF tuners ESP: Electrostatic discharge sensitive device, observe handling precaution! 1= B Package CO O 1! Pin Configuration Q62702-F1520 LU Marking Ordering Code LOs II
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Q62702-F1520
OT-323
IS21el2
IS21/S
0235b05
Q1E17EE
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Untitled
Abstract: No abstract text available
Text: SIEMENS BAS 16W Silicon Switching Diode • For high speed switching, applications Type Marking Ordering Code tape and reel BAS 16W A6s Q62702-A1050 Pin Configuration 1 2 3 A C Package SOT-323 Maximum Ratings Parameter Symbol Reverse voltage Vr B A S 16W
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Q62702-A1050
OT-323
235bOS
G12DS71
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3tb 50 siemens
Abstract: No abstract text available
Text: SIEMENS CFY 35 GaAs FET • • • • Low noise High gain For low-noise front end amplifiers For DBS down converters ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering code tape and reel CFY 35-20 NA Q62702-F1393
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Q62702-F1393
Q62702-F1394
535bD5
D155EÃ
3tb 50 siemens
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