Untitled
Abstract: No abstract text available
Text: SCS387S Elektronische Bauelemente High Speed Switching Diodes RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOD-523 CATHODE MARK . Features Small Package 1.2±0.05 1.6±0.1 0.3±0.05 0.12±0.05 0.8±0.05 0.6±0.1 Marking: G Dimensions in millimeters
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SCS387S
OD-523
100mA
01-Jun-2002
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marking v6 07 diode
Abstract: No abstract text available
Text: BAP64-02 Silicon PIN diode Rev. 8 — 28 April 2014 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD523 ultra small plastic SMD package. 1.2 Features and benefits High voltage, current controlled
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BAP64-02
OD523
sym006
marking v6 07 diode
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zener Z2 033
Abstract: BZT52C18T BZT52C2V4T BZT52C39T BZT52C36T BZT52C7V5T
Text: MCC BZT52C2V4T THRU BZT52C39T omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • 100 mW Zener Diode 2.4 to 39 Volts Planar Die Construction 100mW Power Dissipation SOD523 Absolute Maximum Ratings
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100mW
BZT52C2V4T
BZT52C39T
OD523
BZT52C6V8T
BZT52C7V5T
BZT52C8V2T
BZT52C9V1T
BZT52C10T
BZT52C11T
zener Z2 033
BZT52C18T
BZT52C39T
BZT52C36T
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Untitled
Abstract: No abstract text available
Text: PMEG3010EB 1 A very low VF MEGA Schottky barrier rectifier Rev. 2 — 15 March 2012 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifier with an integrated guard ring for stress protection, encapsulated in a SOD523 ultra small and flat
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PMEG3010EB
OD523
AEC-Q101
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MARKING TX
Abstract: IR switch 1SV308
Text: Diodes SMD Type VHF TNUER BAND SWITCH APPLICATIONS 1SV308 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Low Series Resistance:rs = 1.1 +0.05 0.8-0.05 Features Typ. + +0.1 0.6-0.1 - Small Total Capacitance:CT = 0.3pF(Typ.) +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max
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1SV308
OD-523
07max
77max
MARKING TX
IR switch
1SV308
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Untitled
Abstract: No abstract text available
Text: Product specification 1SV308 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Low Series Resistance:rs = 1.1 +0.05 0.8-0.05 Features Typ. + +0.1 0.6-0.1 - Small Total Capacitance:CT = 0.3pF(Typ.) +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max A b s o lu te M a x im u m R a tin g s T a = 2 5
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1SV308
OD-523
07max
77max
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Untitled
Abstract: No abstract text available
Text: Product specification BAR64-02W SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 Features +0.05 0.8-0.05 High voltage current controlled RF resistor for RF attenuator and switches Frequency range above 1 MHz + +0.1 0.6-0.1 - Low resistance and short carrier lifetime
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BAR64-02W
OD-523
77max
07max
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Untitled
Abstract: No abstract text available
Text: Product specification HVC134 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low capacitance. C=0.4pF max max) +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Low forward resistance. (rf=2.0 A b s o lu te M a x im u m R a tin g s T a = 2 5
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HVC134
OD-523
77max
07max
100pF,
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marking c2 diode
Abstract: diode marking c2 marking c2 ultra low forward voltage diode HSC276 SOD523 marking c2 MARKING C2 SOD523
Text: Diodes SMD Type Silicon Schottky Barrier Diode HSC276 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features High forward current, Low capacitance. + +0.1 0.6-0.1 - Ultra small Flat Package UFP is suitable for surface mount design. +0.1 1.6-0.1
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HSC276
OD-523
07max
77max
200pF
marking c2 diode
diode marking c2
marking c2
ultra low forward voltage diode
HSC276
SOD523 marking c2
MARKING C2 SOD523
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smd rf transistor marking
Abstract: HVC134
Text: Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVC134 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low capacitance. C=0.4pF max max) +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Low forward resistance. (rf=2.0 A b s o lu te M a x im u m R a tin g s T a = 2 5
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HVC134
OD-523
77max
07max
100pF,
smd rf transistor marking
HVC134
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smd rf transistor marking
Abstract: HVC136 marking SMD P6 RF25
Text: Diodes SMD Type Silicon Epitaxial Trench Pin Diode HVC136 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Adopting the trench structure improves low capacitance. C = 0.45 pF max Low forward resistance. (rf=2.5 max) +0.1
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HVC136
OD-523
77max
07max
200pF,
smd rf transistor marking
HVC136
marking SMD P6
RF25
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Untitled
Abstract: No abstract text available
Text: Product specification HVC135 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Adopting the trench structure improves low capacitance. C=0.6pF max Low forward resistance. (rf=2.0 max) +0.1 1.6-0.1 0.77max +0.05 0.1-0.02
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HVC135
OD-523
77max
07max
200pF,
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Untitled
Abstract: No abstract text available
Text: Product specification HVC136 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Adopting the trench structure improves low capacitance. C = 0.45 pF max Low forward resistance. (rf=2.5 max) +0.1 1.6-0.1 0.77max +0.05 0.1-0.02
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HVC136
OD-523
77max
07max
200pF,
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smd rf transistor marking
Abstract: BAR63V-02V
Text: Diodes SMD Type RF PIN Diode BAR63V-02V SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low forward resistance +0.1 1.6-0.1 Space saving SOD-523 package with low series inductance 0.77max +0.05 0.1-0.02 0.07max Very small reverse capacitance
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BAR63V-02V
OD-523
OD-523
77max
07max
smd rf transistor marking
BAR63V-02V
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Untitled
Abstract: No abstract text available
Text: Product specification HVC133 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - Low capacitance. C=1.0pF max max) +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Low forward resistance. (rf=0.7 A b s o lu te M a x im u m R a tin g s T a = 2 5
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HVC133
OD-523
77max
07max
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SMD MARKING T5
Abstract: DIODE T5 DIODE SMD T5 smd transistor t5 smd 5 pin T5 marking DIODE SMD 10 25 t5 smd rf transistor marking HVC145 marking T5
Text: Diodes SMD Type Silicon Epitaxial Planar Pin Diode HVC145 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - An optimal solution for antenna switching in mobile phones. Low capacitance. C = 0.45 pF max 0.77max max) +0.05
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HVC145
OD-523
77max
07max
200pF,
SMD MARKING T5
DIODE T5
DIODE SMD T5
smd transistor t5
smd 5 pin T5 marking
DIODE SMD 10 25 t5
smd rf transistor marking
HVC145
marking T5
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Untitled
Abstract: No abstract text available
Text: Product specification RB520S-30 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Ultra Small mold type. EMD2 + +0.1 0.6-0.1 - Low IR. High reliability. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25 Param eter
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RB520S-30
OD-523
07max
77max
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RB520S-30
Abstract: No abstract text available
Text: Diodes SMD Type Schottky barrier diode RB520S-30 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 +0.05 0.8-0.05 Features Ultra Small mold type. EMD2 + +0.1 0.6-0.1 - Low IR. High reliability. +0.1 1.6-0.1 +0.05 0.1-0.02 0.07max 0.77max Absolute Maxim um Ratings Ta = 25
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RB520S-30
OD-523
07max
77max
RB520S-30
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Untitled
Abstract: No abstract text available
Text: 1SS400 Taiwan Semiconductor Small Signal Product 200mW, SMD High Speed Switching Diode FEATURES - Fast switching device trr < 4.0 ns - Surface mount device type - Moisture sensitivity level 1 - Matte Tin(Sn) lead finish - Pb free and RoHS compliant - Green compound (Halogen free) with suffix "G" on
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1SS400
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404002
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smd diode S4
Abstract: smd marking S21 K5 diode smd BAP63-02
Text: Diodes SMD Type Silicon PIN diode BAP63-02 SOD-523 +0.05 0.3-0.05 Unit: mm +0.1 1.2-0.1 +0.05 0.8-0.05 Features + +0.1 0.6-0.1 - High speed switching for RF signals Low diode capacitance +0.1 1.6-0.1 0.77max Low diode forward resistance For applications up to 3 GHz.
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BAP63-02
OD-523
77max
07max
smd diode S4
smd marking S21
K5 diode smd
BAP63-02
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Untitled
Abstract: No abstract text available
Text: 1SS387 High Speed Switching Diodes * “G” Lead Pb -Free SWITCHING DIODE 100 mAMPERES 80 VOLTS Features: *Extremely High Switching Speed. *Low Reverse Leakage Current. *High Reliability. *Small Outline Surface Mount SOD-523 Package. 1 Applications: *High Speed Switching.
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1SS387
OD-523
OD-523
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Schottky
Abstract: No abstract text available
Text: RB520S-30 Taiwan Semiconductor Small Signal Product 200mW, Low VF SMD Schottky Barrier Diode FEATURES - Low power loss, high current capability, low VF - Surface mount device type - Moisture sensitivity level 1 - Matte Tin Sn lead finish with Nickel(Ni) underplate
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RB520S-30
200mW,
OD-523F
OD-523F
MIL-STD-202,
C/10s
S1404003
Schottky
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Untitled
Abstract: No abstract text available
Text: 1SS387 High Speed Switching Diodes * “G” Lead Pb -Free SWITCHING DIODE 100 mAMPERES 80 VOLTS Features: *Extremely High Switching Speed. *Low Reverse Leakage Current. *High Reliability. *Small Outline Surface Mount SOD-523 Package. Applications: *High Speed Switching.
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1SS387
OD-523
OD-523
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Untitled
Abstract: No abstract text available
Text: Product specification 1PS79SB40 SOD-523 +0.05 0.3-0.05 Unit: mm 1.2 +0.1 -0.1 Features +0.05 0.8-0.05 Very Low forward voltage + +0.1 0.6-0.1 - Guard ring protected Ultra small plastic SMD package. +0.1 1.6-0.1 0.77max +0.05 0.1-0.02 0.07max Low diode capacitance.
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1PS79SB40
OD-523
77max
07max
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