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    MARKING FY PNP Search Results

    MARKING FY PNP Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy

    MARKING FY PNP Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2SA1662

    Abstract: KTC4374 2sa166 MARKING FY pnp MARKING FY pnp 2sa1662
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1662 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units


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    PDF OT-89 2SA1662 OT-89 KTC4374 -50mA -200mA -200mA -20mA -10mA 2SA1662 KTC4374 2sa166 MARKING FY pnp MARKING FY pnp 2sa1662

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1662 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value


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    PDF OT-89-3L 2SA1662 OT-89-3L KTC4374 -10mA -50mA -200mA -200mA -20mA -10mA

    2SA1662

    Abstract: ktc4374
    Text: 2SA1662 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 4.6 4.4 1.8 1.4 1.6 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features — B 0.8 MIN Complementary to KTC4374 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO


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    PDF 2SA1662 OT-89 OT-89 KTC4374 -10mA -50mA -200mA -20mA 2SA1662 ktc4374

    Untitled

    Abstract: No abstract text available
    Text: Transistors SMD Type PNP General Purpose Transistors KTA1662 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Small Flat Package. 3 0.53±0.1 0.80±0.1 0.48±0.1 2 0.44±0.1 2.60±0.1 1 0.40±0.1 ● Complementary to KTC4374.


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    PDF KTA1662 OT-89 KTC4374. -200m -50mA -200mA, -20mA -10mA

    PN3906 TRANSISTOR PNP

    Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
    Text: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92


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    PDF SPT/TO-92 SPTTO-92 llU--800 loo250-700 loo--300 lOO-60( 250-63t loo05 loo56 UMT3906 PN3906 TRANSISTOR PNP 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A

    transistor BC SERIES

    Abstract: BC848T TRANSISTOR BC 313 BC transistor series transistor Bc 580 846BT BC856T C847b transistor BC 312 BC847BT
    Text: Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T; BC848T series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose sw itching and am plification, especially


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    PDF BC846T; BC847T; BC848T SC-75 BC856T, BC857T BC858T BC846AT 846BT BC847AT transistor BC SERIES TRANSISTOR BC 313 BC transistor series transistor Bc 580 BC856T C847b transistor BC 312 BC847BT

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M


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    PDF BCP53M Q62702-C2592 Q62702-C2593 Q62702-C2594 SCT-595 6E35bOS 02BShD5 B35b05

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2


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    PDF 47ki2, Q62702-C2496 OT-363 235LQ5 D12Qb7M BCR48PN D12Qb75

    BFR194

    Abstract: No abstract text available
    Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!


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    PDF Q62702-F1346 OT-23 15toimax BFR194 900MHz BFR194

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA RN4903 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A Q f) 3 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm ü .l± U .l .1.2 5 * 0.1 • Including Two Devices in US6 (U ltra Super Mini Type with 6


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    PDF RN4903 22kil

    F5211

    Abstract: 24 LC 0261 MMBR521L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B R 521L T 1* MRF521 M R F 5 2 1 1LT1 The RF Line PNP Silicon H igh-Frequency Transistor ‘ Motorola Preferred Device Designed primarily for use in the high-gain, !ow-noise small-signal amplifiers for operation up to 3.5 GHz. Also usable ¡n applications requiring fast switching


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    PDF MMBR521LT1) MRF521, MRF5211LT1) MRF521 MMBR521LT1 MRF521 F5211 24 LC 0261 MMBR521L

    transistor top 222

    Abstract: SOT323 Marking LE transistor 222 MARKING BM
    Text: Philips Semiconductors Product specification NPN general purpose transistor 2PD1820A FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 50 V) 1 base • Low collector-emitter saturation voltage (max. 600 mV). 2 emitter 3


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    PDF 2PD1820A SC-70; OT323 2PB1219A. 2PD1820AQ 2PD1820AR 2PD1820AS OT323) transistor top 222 SOT323 Marking LE transistor 222 MARKING BM

    marking code ACP transistor

    Abstract: marking code AAp BCW60C
    Text: Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 32 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.


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    PDF BCW61 BCW60A BCW60B BCW60C BCW60D BCW60 marking code ACP transistor marking code AAp

    TRANSISTOR t1p

    Abstract: marking t1p t1p TRANSISTOR
    Text: Philips Semiconductors Product specification NPN switching transistors FEATURES PMST2222; PMST2222A PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching and linear amplification.


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    PDF OT323 PMST2907A. PMST2222; PMST2222A PMST2222 OT323) PMST2222A TRANSISTOR t1p marking t1p t1p TRANSISTOR

    2222a sot23

    Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
    Text: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.


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    PDF FMMT2222 FMMT2222A FMMT2907 OT-23 FMMT2222A Co00/300 FMMT2369A 2222a sot23 2222a bc 2222a 50s MARKING CODE BCV72 BCW29 BFQ31

    rm 6203

    Abstract: No abstract text available
    Text: Ordering number:ENN6611 PNP/NPN Epitaxial Planar Silicon Transistors MCH6103/MCH6203 DC/DC Converter Applications Applications Package Dimensions • R elay drivers, lamp drivers, m otor drivers and strobes. unit:mm 2177 [M C H 6103/M C H 6203] Features 0.3,


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    PDF ENN6611 MCH6103/MCH6203 6103/M rm 6203

    transistor 1431 T

    Abstract: BR521L
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 D e s ig n e d p rim a rily fo r use in th e h ig h -g a in , lo w -n o is e s m a ll-s ig n a l am plifiers for operation up to 3.5 GHz. Also usable in applications requiring fast


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    PDF MMBR521LT1) MRF5211LT1) MRF5211LT1 MMBR521LT1 transistor 1431 T BR521L

    bcb57b

    Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
    Text: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80


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    PDF 0DbflH37 BC856 BC857 BC858 OT-23 BC856 200/xA OT-23. bcb57b BCB57 BC856B 3BP BC856A BC856B silicon planar epitaxial transistors BC857A BC857B

    fy sot 143

    Abstract: Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA
    Text: HOTOROLA SC XSTRS/R F bTE b3b72SH T> G100147 SSk «nOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR 5 2 1 LT 1 * MRF 521 MRF 5 2 1 1 LT 1 The RF Line PNP Silicon High-Frequency Transistor •Motorola P r r t T f d D«vtce Designed primarily for use in the high-gain, low-noise small-signal amplifiers


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    PDF b3b725H G100147 110Tb MMBR521LT1) MRF521, MRF5211LT1) OT-23 fy sot 143 Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA

    2N3903 MOTOROLA SOT-23

    Abstract: MPS3640 MMBT2907A MMBT2907 MMBT3903 mmbt3904 motorola 2N3903 MMBT2907 MMBT2907A MMBT3640 MMBT3904
    Text: MOTOROLA 6367254 SC -CXSTRS/R MOTOROLA TL FI SC XSTRS/R i DE I b 3 t i 7 2 S 4 F 96D 00flE03b 82036. T D - M A X I M U M R ATINGS Rating Symbol MPS2907 40 MPS2907A 60 Unit VcEO VcBO Emitter-Base Voltage Ve b o 5.0 Vdc lc 600 mAdc Collector Current — Continuous


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    PDF 000203b MPS2907 MPS2907A MMBT3903 MMBT3904 X10-4 2N3903 MOTOROLA SOT-23 MPS3640 MMBT2907A MMBT2907 mmbt3904 motorola 2N3903 MMBT2907 MMBT2907A MMBT3640 MMBT3904

    TH01

    Abstract: TK71 TK71340M
    Text: TK71340M TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking


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    PDF TK71340M DB3-I021 TK71340M QH7-B012. DP3-G014. TH01 TK71

    Untitled

    Abstract: No abstract text available
    Text: Final Electrical Specifications r r u n LTC1258 m TECHNOLOGY M ic ro p o w e r Low D ro p o u t R efe re nce D e c e m b e r 1998 FCRTURCS D C S C R IP TIO n • 200mV Max Dropout at 10mA Output Current ■ 4uA Typical Quiescent Current ■ 0.4% Max Initial Accuracy


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    PDF LTC1258 200mV 40ppm/ 75mV/mA, 800nA 10ppm/ LT1634 LT1460 LTC1540

    sot23 marking JS v

    Abstract: No abstract text available
    Text: u f _LT1027 m TECHNOLOGY P recision 5V R e fe re n c e FCnTURCS D C S C R IP T IO n • Very Low Drift: 2ppm/°C MaxTC ■ Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only ■ Output Sources 15mA, Sinks 10mA ■ Excellent Transient Response Suitable for


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    PDF LT1027 16-bit LT1027 10ppm/ OT-23 1027fa sot23 marking JS v

    BSX19 equivalent

    Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small


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    PDF OT-23 BSX19 equivalent BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868