2SA1662
Abstract: KTC4374 2sa166 MARKING FY pnp MARKING FY pnp 2sa1662
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 Plastic-Encapsulate Transistors 2SA1662 SOT-89 TRANSISTOR PNP 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units
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OT-89
2SA1662
OT-89
KTC4374
-50mA
-200mA
-200mA
-20mA
-10mA
2SA1662
KTC4374
2sa166
MARKING FY pnp
MARKING FY pnp 2sa1662
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SA1662 SOT-89-3L TRANSISTOR PNP 1. BASE FEATURES Complementary to KTC4374 2. COLLECTOR 1 2 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value
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OT-89-3L
2SA1662
OT-89-3L
KTC4374
-10mA
-50mA
-200mA
-200mA
-20mA
-10mA
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2SA1662
Abstract: ktc4374
Text: 2SA1662 SOT-89 Transistor PNP 1. BASE SOT-89 2. COLLECTOR 1 4.6 4.4 1.8 1.4 1.6 1.4 2 3. EMITTER 3 2.6 4.25 2.4 3.75 Features B 0.8 MIN Complementary to KTC4374 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO
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2SA1662
OT-89
OT-89
KTC4374
-10mA
-50mA
-200mA
-20mA
2SA1662
ktc4374
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Untitled
Abstract: No abstract text available
Text: Transistors SMD Type PNP General Purpose Transistors KTA1662 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 1.80±0.1 2.50±0.1 4.00±0.1 • Features ● Small Flat Package. 3 0.53±0.1 0.80±0.1 0.48±0.1 2 0.44±0.1 2.60±0.1 1 0.40±0.1 ● Complementary to KTC4374.
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KTA1662
OT-89
KTC4374.
-200m
-50mA
-200mA,
-20mA
-10mA
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PN3906 TRANSISTOR PNP
Abstract: 2SC174OS PN3906 PNP switching transistor 2N3906 mhz SPEC-C37 SPEC-A38 PN3904 MMST8098 transistor bc 588 TRANSISTOR MARKING CODE R2A
Text: m - Transistors RCHV s the leaclng volume manufacturer of surface mount small slgnal transistors These transistors help to reduce size and increase performance of a variety of devices of any kind :c i?"^ PNP SMTYSST3 UMT3 EMT3 t>l- NPN PNP NPN PNP EMT3"' SPT/TO-92
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SPT/TO-92
SPTTO-92
llU--800
loo250-700
loo--300
lOO-60(
250-63t
loo05
loo56
UMT3906
PN3906 TRANSISTOR PNP
2SC174OS
PN3906
PNP switching transistor 2N3906 mhz
SPEC-C37
SPEC-A38
PN3904
MMST8098
transistor bc 588
TRANSISTOR MARKING CODE R2A
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transistor BC SERIES
Abstract: BC848T TRANSISTOR BC 313 BC transistor series transistor Bc 580 846BT BC856T C847b transistor BC 312 BC847BT
Text: Philips Semiconductors Preliminary specification NPN general purpose transistors BC846T; BC847T; BC848T series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 65 V). DESCRIPTION 1 APPLICATIONS base 2 emitter 3 collector • General purpose sw itching and am plification, especially
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BC846T;
BC847T;
BC848T
SC-75
BC856T,
BC857T
BC858T
BC846AT
846BT
BC847AT
transistor BC SERIES
TRANSISTOR BC 313
BC transistor series
transistor Bc 580
BC856T
C847b
transistor BC 312
BC847BT
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCP 51M . BCP53M PNP Silicon AF Transistor • For AF driver and output stages • High collector current • Low collector-emitter saturation voltage • Complementary types: BCP 54M.BCP 56M NPN Type Marking Ordering Code Pin Configuration BCP 51M
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BCP53M
Q62702-C2592
Q62702-C2593
Q62702-C2594
SCT-595
6E35bOS
02BShD5
B35b05
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Untitled
Abstract: No abstract text available
Text: SIEMENS BCR 48PN NPN/PNP Silicon Digital Tansistor Array • Switching circuit, inverter, interface circuit, drive circuit •Two galvanic internal isolated NPN/PNP Transistor in one package • Built in bias resistor NPN: R1 = 47ki2, R2 = 47k£2 PNP: R1 = 2.2k£ì, R2 = 47k£2
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47ki2,
Q62702-C2496
OT-363
235LQ5
D12Qb7M
BCR48PN
D12Qb75
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BFR194
Abstract: No abstract text available
Text: SIEMENS BFR 194 PNP Silicon RF Transistor • For low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 20mA to 80mA • Complementary type: BFR 106 NPN ESP: Electrostatic discharge sensitive device, observe handling precaution!
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Q62702-F1346
OT-23
15toimax
BFR194
900MHz
BFR194
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Untitled
Abstract: No abstract text available
Text: TOSHIBA RN4903 TOSHIBA TRANSISTOR SILICON PNP EPITAXIAL TYPE PCT PROCESS SILICON NPN EPITAXIAL TYPE (PCT PROCESS) R N A Q f) 3 SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. U nit in mm ü .l± U .l .1.2 5 * 0.1 • Including Two Devices in US6 (U ltra Super Mini Type with 6
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RN4903
22kil
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F5211
Abstract: 24 LC 0261 MMBR521L
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M M B R 521L T 1* MRF521 M R F 5 2 1 1LT1 The RF Line PNP Silicon H igh-Frequency Transistor ‘ Motorola Preferred Device Designed primarily for use in the high-gain, !ow-noise small-signal amplifiers for operation up to 3.5 GHz. Also usable ¡n applications requiring fast switching
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MMBR521LT1)
MRF521,
MRF5211LT1)
MRF521
MMBR521LT1
MRF521
F5211
24 LC 0261
MMBR521L
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transistor top 222
Abstract: SOT323 Marking LE transistor 222 MARKING BM
Text: Philips Semiconductors Product specification NPN general purpose transistor 2PD1820A FEATURES PINNING • High current max. 500 mA PIN DESCRIPTION • Low voltage (max. 50 V) 1 base • Low collector-emitter saturation voltage (max. 600 mV). 2 emitter 3
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2PD1820A
SC-70;
OT323
2PB1219A.
2PD1820AQ
2PD1820AR
2PD1820AS
OT323)
transistor top 222
SOT323 Marking LE
transistor 222
MARKING BM
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marking code ACP transistor
Abstract: marking code AAp BCW60C
Text: Philips Semiconductors Product specification NPN general purpose transistors BCW60 series FEATURES PINNING • Low current max. 100 mA PIN • Low voltage (max. 32 V). 1 APPLICATIONS DESCRIPTION base 2 emitter 3 collector • General purpose switching and amplification.
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BCW61
BCW60A
BCW60B
BCW60C
BCW60D
BCW60
marking code ACP transistor
marking code AAp
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TRANSISTOR t1p
Abstract: marking t1p t1p TRANSISTOR
Text: Philips Semiconductors Product specification NPN switching transistors FEATURES PMST2222; PMST2222A PINNING • High current max. 600 mA PIN • Low voltage (max. 40 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • High-speed switching and linear amplification.
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OT323
PMST2907A.
PMST2222;
PMST2222A
PMST2222
OT323)
PMST2222A
TRANSISTOR t1p
marking t1p
t1p TRANSISTOR
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2222a sot23
Abstract: 2222a bc 2222a FMMT2222A 50s MARKING CODE FMMT2222 FMMT2907 BCV72 BCW29 BFQ31
Text: FERRANTI semiconductors FMMT2222 FMMT2222A N P N Silicon Planar General Purpose Sw itching Transistors DESCRIPTION These devices are intended fo r use in sm all and medium signal am plification applications from d.c. to radio frequencies. Com plem entary to the FM M T2907 series.
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FMMT2222
FMMT2222A
FMMT2907
OT-23
FMMT2222A
Co00/300
FMMT2369A
2222a sot23
2222a
bc 2222a
50s MARKING CODE
BCV72
BCW29
BFQ31
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rm 6203
Abstract: No abstract text available
Text: Ordering number:ENN6611 PNP/NPN Epitaxial Planar Silicon Transistors MCH6103/MCH6203 DC/DC Converter Applications Applications Package Dimensions • R elay drivers, lamp drivers, m otor drivers and strobes. unit:mm 2177 [M C H 6103/M C H 6203] Features 0.3,
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ENN6611
MCH6103/MCH6203
6103/M
rm 6203
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transistor 1431 T
Abstract: BR521L
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line PNP Silicon High-Frequency Transistor MMBR521LT1 MRF5211LT1 D e s ig n e d p rim a rily fo r use in th e h ig h -g a in , lo w -n o is e s m a ll-s ig n a l am plifiers for operation up to 3.5 GHz. Also usable in applications requiring fast
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MMBR521LT1)
MRF5211LT1)
MRF5211LT1
MMBR521LT1
transistor 1431 T
BR521L
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bcb57b
Abstract: BCB57 BC856B 3BP BC858 BC856 BC856A BC856B silicon planar epitaxial transistors BC857A BC857B
Text: 7 1 1 G Ô E b Q O b ö H B ? 2b2 BC856 BC857 BC858 IPHIN SILICON PLANAR EPITAXIAL TRANSISTORS P-N-P transistros, in a S O T-23 plastic package. Q U IC K R E F E R E N C E D A T A BC856 BC857 BC858 Col lector-emitter voltage + V g E = 1 V “ V C EX max. 80
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0DbflH37
BC856
BC857
BC858
OT-23
BC856
200/xA
OT-23.
bcb57b
BCB57
BC856B 3BP
BC856A
BC856B
silicon planar epitaxial transistors
BC857A
BC857B
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fy sot 143
Abstract: Transistor motorola 513 TO-126 MMBR521 MMBR521L CASE318-07 MMBR521LT1 MRF521 MRF5211 MRF5211LT1 TO-236AA
Text: HOTOROLA SC XSTRS/R F bTE b3b72SH T> G100147 SSk «nOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MMBR 5 2 1 LT 1 * MRF 521 MRF 5 2 1 1 LT 1 The RF Line PNP Silicon High-Frequency Transistor •Motorola P r r t T f d D«vtce Designed primarily for use in the high-gain, low-noise small-signal amplifiers
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b3b725H
G100147
110Tb
MMBR521LT1)
MRF521,
MRF5211LT1)
OT-23
fy sot 143
Transistor motorola 513 TO-126
MMBR521
MMBR521L
CASE318-07
MMBR521LT1
MRF521
MRF5211
MRF5211LT1
TO-236AA
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2N3903 MOTOROLA SOT-23
Abstract: MPS3640 MMBT2907A MMBT2907 MMBT3903 mmbt3904 motorola 2N3903 MMBT2907 MMBT2907A MMBT3640 MMBT3904
Text: MOTOROLA 6367254 SC -CXSTRS/R MOTOROLA TL FI SC XSTRS/R i DE I b 3 t i 7 2 S 4 F 96D 00flE03b 82036. T D - M A X I M U M R ATINGS Rating Symbol MPS2907 40 MPS2907A 60 Unit VcEO VcBO Emitter-Base Voltage Ve b o 5.0 Vdc lc 600 mAdc Collector Current — Continuous
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000203b
MPS2907
MPS2907A
MMBT3903
MMBT3904
X10-4
2N3903 MOTOROLA SOT-23
MPS3640
MMBT2907A MMBT2907
mmbt3904 motorola
2N3903
MMBT2907
MMBT2907A
MMBT3640
MMBT3904
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TH01
Abstract: TK71 TK71340M
Text: TK71340M TABLE OF CONTENTS 1.Purpose 2.TOKO Part Number 3.Function 4.Applications 5.Structure 6.Package Outline 7.Absolute Maximum Ratings 8.Electrical Characteristics 9.Test Circuit 10.Pin Assignment 11.Block Diagram 12.Definition 13.Package Outline Dimensions/Marking
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TK71340M
DB3-I021
TK71340M
QH7-B012.
DP3-G014.
TH01
TK71
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Untitled
Abstract: No abstract text available
Text: Final Electrical Specifications r r u n LTC1258 m TECHNOLOGY M ic ro p o w e r Low D ro p o u t R efe re nce D e c e m b e r 1998 FCRTURCS D C S C R IP TIO n • 200mV Max Dropout at 10mA Output Current ■ 4uA Typical Quiescent Current ■ 0.4% Max Initial Accuracy
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LTC1258
200mV
40ppm/
75mV/mA,
800nA
10ppm/
LT1634
LT1460
LTC1540
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sot23 marking JS v
Abstract: No abstract text available
Text: u f _LT1027 m TECHNOLOGY P recision 5V R e fe re n c e FCnTURCS D C S C R IP T IO n • Very Low Drift: 2ppm/°C MaxTC ■ Pin Compatible with LT1021-5, REF-02, TO-5 and PDIP Packages Only ■ Output Sources 15mA, Sinks 10mA ■ Excellent Transient Response Suitable for
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LT1027
16-bit
LT1027
10ppm/
OT-23
1027fa
sot23 marking JS v
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BSX19 equivalent
Abstract: BC350 bc107 BFW63 bcw17 SHORT DATA ON 2N744 transistor BC287 2N3020 BC451 2N2868
Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX PRODUCT GUIDE SELECTION GUIDE CROSS REFERENCE HANDLING PRECAUTION QUALITY SURFACE MOUNTING CASE: SOT-23 DATASHEETS PACKAGES Page 4 5 7 9 14 24 25 30 35 419 INTRODUCTION This databook contains datasheets covering the range of discrete devices for small
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OT-23
BSX19 equivalent
BC350
bc107
BFW63
bcw17
SHORT DATA ON 2N744
transistor BC287
2N3020
BC451
2N2868
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