FHK301N
Abstract: marking IGF FHK84P Zero-Gate Voltage Drain Current FHK131 FHK138 SOT 23 MOSFET FHK170 VGS 20v FHK139
Text: SOT-23 MOS 场效应三极管（SOT-23 MOSFET TRANSISTORS） 型号 TYPE FHK84P FHK119 FHK123 FHK131 FHK138 FHK139 FHK145 FHK149 FHK169 FHK170 FHK284P FHK301N FHK302P FHK303N FHK304P FHK336P FHK337N FHK338P FHK340P FHK357N FHK358P FHK359AN FHK360P FHK7002
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OT-23
FHK84P
FHK119
FHK123
FHK131
FHK138
FHK139
FHK145
FHK149
FHK301N
marking IGF
FHK84P
Zero-Gate Voltage Drain Current
FHK131
FHK138
SOT 23 MOSFET
FHK170
VGS 20v
FHK139
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9407A
Abstract: FHK9407A "Field Effect Transistor" field effect transistor
Text: P Channel Enhancement Mode Field Effect Transistor FHK9407A P Channel Enhancement Mode Field Effect Transistor DESCRIPTION & FEATURES 概述及特點 Low on-state resistance N-channel：RDS ON = 118mΩ@VGS = 10V. RDS(ON) = 150 mΩ@VGS = 4.5V. Super High dense cell design for extremely low RDS(ON).
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FHK9407A
OT223
OT223
FHK9407A
9407A
"Field Effect Transistor"
field effect transistor
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FHK7002
Abstract: 200A diode VDS-25V
Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 ReservedMOSFET Transistors 场效应管 N-Channel Enhancement-Mode FHK7002 MAXIMUM RATINGS(Ta=25℃) 最大额定值
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FHK7002)
FHK7002
115mA
500mA
OT-23
200A diode
VDS-25V
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SOT 33M marking
Abstract: No abstract text available
Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK2312 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻
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FHK2312
SC-59/
OT-23-3L
SC-59
OT-23/SC-59
VDS10V
SOT 33M marking
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pfv2
Abstract: mosfet vgs 5v SOT23
Text: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK2301 P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-23 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻
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FHK2301
OT-23
SC-59/
OT-23-3L
SC-59
OT-23/SC-59
pfv2
mosfet vgs 5v SOT23
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3055L
Abstract: f 3055l sot89 Marking mosfet fr5 sot89 FHK3055L sot89 17
Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK3055L N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻 Rugged and reliable. 高可靠性
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FHK3055L
OT-89
3055L
f 3055l
sot89 Marking mosfet
fr5 sot89
FHK3055L
sot89 17
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4435a
Abstract: 4435a MOSFET F 4435a FHK4435A
Text: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK4435A P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-223 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻
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FHK4435A
OT-223
OT223
4435a
4435a MOSFET
F 4435a
FHK4435A
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PDF
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Untitled
Abstract: No abstract text available
Text: 結型場效應管 N-Channel Enhancement-Mode MOSFET N-Channel Enhancement-Mode MOSFET 結型場效應管 FHK7002 DESCRIPTION & FEATURES 概述及特點 Low on-resistance. 低導通阻抗 Fast switching speed. 快速開關特性 Low-voltage drive.低啟動電壓
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FHK7002
OT-23
OT-23
062in,
500mA
200mA
115mA
500mA,
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PDF
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SOT-23 Marking 2302
Abstract: mosfet 20v 30A MOSFET 2302 2302 SOT-23
Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK2302 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-23 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻
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FHK2302
OT-23
SC-59/
OT-23-3L
SC-59
OT-23/SC-59
SOT-23 Marking 2302
mosfet 20v 30A
MOSFET 2302
2302 SOT-23
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8205 A mosfet
Abstract: 8205 A battery 8205 mosfet Dual N-Channel MOSFET 8205 8205 dual mosfet 8205* MOSFET FHK8205 8205 A 8205 6 pin mosfet 8205
Text: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET FHK8205 Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 SOT-26 DESCRIPTION & FEATURES 概述及特點 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻
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OT-26
FHK8205
8205 A mosfet
8205 A battery
8205 mosfet
Dual N-Channel MOSFET 8205
8205 dual mosfet
8205* MOSFET
FHK8205
8205 A
8205 6 pin
mosfet 8205
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9926 mosfet
Abstract: F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926
Text: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 FHK9926 DESCRIPTION & FEATURES 概述及特點 SOT-26 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻
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FHK9926
OT-26
9926 mosfet
F 9926 MOSFET
FHK9926
sot 26 Dual N-Channel MOSFET
mosfet 9926
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PDF
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MOSFET 40A 600V
Abstract: 1N60 mosfet
Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK4N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 TO-220F The FHK4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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FHK4N60
O-220F
FHK4N60
O-220F
50VRG
MOSFET 40A 600V
1N60 mosfet
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1N60 mosfet
Abstract: MOSFET 300V SOT-89 Power MOSFET 50V 10A FHK1N60 mosfet 300V 10A mosfet 1N60
Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK1N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 The FHK1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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FHK1N60
OT-89
FHK1N60
OT-89
50VRG
1N60 mosfet
MOSFET 300V SOT-89
Power MOSFET 50V 10A
mosfet 300V 10A
mosfet 1N60
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1N60 mosfet
Abstract: No abstract text available
Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK7N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 TO-220F The FHK7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate
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FHK7N60
O-220F
FHK7N60
O-220F
50VRG
1N60 mosfet
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DFLZ10
Abstract: DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24
Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features
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DFLZ10
DFLZ11
DFLZ12
DFLZ13
DFLZ15
DFLZ16
DFLZ18
DFLZ20
DFLZ22
DFLZ24
DFLZ16
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marking Fhk
Abstract: DFLZ10
Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features
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DFLZ10
DFLZ11
DFLZ12
DFLZ13
DFLZ15
DFLZ16
DFLZ18
DFLZ20
DFLZ22
DFLZ24
marking Fhk
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PDF
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marking Fhk
Abstract: DFLZ5V6 DFLZ10
Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI 123 Features • • •
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DFLZ10
DFLZ11
DFLZ12
DFLZ13
DFLZ15
DFLZ16
DFLZ18
DFLZ20
DFLZ22
DFLZ24
marking Fhk
DFLZ5V6
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DFLZ33
Abstract: zener diode 6.2v 1w DFLZ5V6 DFLZ10
Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ5V1 - DFLZ33 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features • · · 1W Power Dissipation on FR-4 PCB
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DFLZ10
DFLZ11
DFLZ12
DFLZ13
DFLZ15
DFLZ16
DFLZ18
DFLZ20
DFLZ22
DFLZ24
DFLZ33
zener diode 6.2v 1w
DFLZ5V6
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PDF
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DFLZ5V6
Abstract: DFLZ10
Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI 123 Features • • • • Mechanical Data • • 1W Power Dissipation on FR-4 PCB Lead Free Finish, RoHS Compliant Note 2 "Green" Molding Compound (No Br, Sb) Qualified to AEC-Q101 Standards for High Reliability
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DFLZ39
AEC-Q101
J-STD-020D
MIL-STD-202,
DS30464
DFLZ5V6
DFLZ10
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cu marking code zener
Abstract: DFLZ5V6 DFLZ10
Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI 123 Please click here to visit our online spice models database. Features • • • • Mechanical Data • • 1W Power Dissipation on FR-4 PCB Lead Free Finish, RoHS Compliant Note 2 "Green" Molding Compound (No Br, Sb)
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DFLZ39
AEC-Q101
J-STD-020D
MIL-STD-202,
DS30464
cu marking code zener
DFLZ5V6
DFLZ10
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PDF
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DFLZ5V6
Abstract: DFLZ10
Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI123 Green Features Mechanical Data • • • • • • • 1W Power Dissipation on FR-4 PCB Lead-Free Finish; RoHS Compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)
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DFLZ39
AEC-Q101
POWERDI123
J-STD-020
MIL-STD-202,
DS30464
DFLZ5V6
DFLZ10
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PDF
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DFLZ10
Abstract: No abstract text available
Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI123 Green Features Mechanical Data • 1W Power Dissipation on FR-4 PCB Lead-Free Finish; RoHS Compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)
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DFLZ39
POWERDI123
AEC-Q101
J-STD-020
DS30464
DFLZ10
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PDF
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DFLZ9V1Q
Abstract: No abstract text available
Text: DFLZ5V1Q - DFLZ39Q 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI 123 Green Features Mechanical Data • 1W Power Dissipation on FR-4 PCB • • Large, exposed pad and heat sink designed for superior thermal • performance Case: POWERDI123 Case Material: Molded Plastic, “Green” Molding Compound. UL
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DFLZ39Q
POWERDI123
J-STD-020
AEC-Q101
DS36898
DFLZ9V1Q
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PDF
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DFLZ5V6
Abstract: DFLZ10
Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI123 Green Features Mechanical Data • 1W Power Dissipation on FR-4 PCB Lead-Free Finish; RoHS Compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)
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DFLZ39
POWERDI123
AEC-Q101
J-STD-020
DS30464
DFLZ5V6
DFLZ10
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PDF
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