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    MARKING FHK Search Results

    MARKING FHK Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING FHK Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    FHK301N

    Abstract: marking IGF FHK84P Zero-Gate Voltage Drain Current FHK131 FHK138 SOT 23 MOSFET FHK170 VGS 20v FHK139
    Text: SOT-23 MOS 场效应三极管（SOT-23 MOSFET TRANSISTORS） 型号 TYPE FHK84P FHK119 FHK123 FHK131 FHK138 FHK139 FHK145 FHK149 FHK169 FHK170 FHK284P FHK301N FHK302P FHK303N FHK304P FHK336P FHK337N FHK338P FHK340P FHK357N FHK358P FHK359AN FHK360P FHK7002


    Original     		PDF OT-23 FHK84P FHK119 FHK123 FHK131 FHK138 FHK139 FHK145 FHK149 FHK301N marking IGF FHK84P Zero-Gate Voltage Drain Current FHK131 FHK138 SOT 23 MOSFET FHK170 VGS 20v FHK139

    9407A

    Abstract: FHK9407A "Field Effect Transistor" field effect transistor
    Text: P Channel Enhancement Mode Field Effect Transistor FHK9407A P Channel Enhancement Mode Field Effect Transistor DESCRIPTION & FEATURES 概述及特點 Low on-state resistance N-channel：RDS ON = 118mΩ@VGS = 10V. RDS(ON) = 150 mΩ@VGS = 4.5V. Super High dense cell design for extremely low RDS(ON).


    Original     		PDF FHK9407A OT223 OT223 FHK9407A 9407A "Field Effect Transistor" field effect transistor

    FHK7002

    Abstract: 200A diode VDS-25V
    Text: 广东肇庆风华新谷微电子有限公司 广东省肇庆市风华路 18 号风华电子工业城三号楼一楼 TEL:0758-2865088 2865091 FAX:0758-2849749 ReservedMOSFET Transistors 场效应管 N-Channel Enhancement-Mode FHK7002 MAXIMUM RATINGS(Ta=25℃) 最大额定值


    Original     		PDF FHK7002) FHK7002 115mA 500mA OT-23 200A diode VDS-25V

    SOT 33M marking

    Abstract: No abstract text available
    Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK2312 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻


    Original     		PDF FHK2312 SC-59/ OT-23-3L SC-59 OT-23/SC-59 VDS10V SOT 33M marking

    pfv2

    Abstract: mosfet vgs 5v SOT23
    Text: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK2301 P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-23 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻


    Original     		PDF FHK2301 OT-23 SC-59/ OT-23-3L SC-59 OT-23/SC-59 pfv2 mosfet vgs 5v SOT23

    3055L

    Abstract: f 3055l sot89 Marking mosfet fr5 sot89 FHK3055L sot89 17
    Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK3055L N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻 Rugged and reliable. 高可靠性


    Original     		PDF FHK3055L OT-89 3055L f 3055l sot89 Marking mosfet fr5 sot89 FHK3055L sot89 17

    4435a

    Abstract: 4435a MOSFET F 4435a FHK4435A
    Text: 增強型場效應管 P-Channel Enhancement-Mode MOSFET FHK4435A P-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-223 High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻


    Original     		PDF FHK4435A OT-223 OT223 4435a 4435a MOSFET F 4435a FHK4435A

    Untitled

    Abstract: No abstract text available
    Text: 結型場效應管 N-Channel Enhancement-Mode MOSFET N-Channel Enhancement-Mode MOSFET 結型場效應管 FHK7002 DESCRIPTION & FEATURES 概述及特點 Low on-resistance. 低導通阻抗 Fast switching speed. 快速開關特性 Low-voltage drive.低啟動電壓


    Original     		PDF FHK7002 OT-23 OT-23 062in, 500mA 200mA 115mA 500mA,

    SOT-23 Marking 2302

    Abstract: mosfet 20v 30A MOSFET 2302 2302 SOT-23
    Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK2302 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-23 SC-59/ SOT-23-3L High dense cell design for extremely low RDS ON . 高密集 單元設計低導通電阻


    Original     		PDF FHK2302 OT-23 SC-59/ OT-23-3L SC-59 OT-23/SC-59 SOT-23 Marking 2302 mosfet 20v 30A MOSFET 2302 2302 SOT-23

    8205 A mosfet

    Abstract: 8205 A battery 8205 mosfet Dual N-Channel MOSFET 8205 8205 dual mosfet 8205* MOSFET FHK8205 8205 A 8205 6 pin mosfet 8205
    Text: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET FHK8205 Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 SOT-26 DESCRIPTION & FEATURES 概述及特點 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻


    Original     		PDF OT-26 FHK8205 8205 A mosfet 8205 A battery 8205 mosfet Dual N-Channel MOSFET 8205 8205 dual mosfet 8205* MOSFET FHK8205 8205 A 8205 6 pin mosfet 8205

    9926 mosfet

    Abstract: F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926
    Text: 雙 N 增強型場效應管 Dual N-Channel Enhancement-Mode MOSFET Dual N-Channel Enhancement-Mode MOSFET 雙 N 增強型場效應管 FHK9926 DESCRIPTION & FEATURES 概述及特點 SOT-26 Super High dense cell design for extremely low RDS ON . 超高密集單元設計可獲得極低導通電阻


    Original     		PDF FHK9926 OT-26 9926 mosfet F 9926 MOSFET FHK9926 sot 26 Dual N-Channel MOSFET mosfet 9926

    MOSFET 40A 600V

    Abstract: 1N60 mosfet
    Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK4N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 TO-220F The FHK4N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate


    Original     		PDF FHK4N60 O-220F FHK4N60 O-220F 50VRG MOSFET 40A 600V 1N60 mosfet

    1N60 mosfet

    Abstract: MOSFET 300V SOT-89 Power MOSFET 50V 10A FHK1N60 mosfet 300V 10A mosfet 1N60
    Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK1N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 SOT-89 The FHK1N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate


    Original     		PDF FHK1N60 OT-89 FHK1N60 OT-89 50VRG 1N60 mosfet MOSFET 300V SOT-89 Power MOSFET 50V 10A mosfet 300V 10A mosfet 1N60

    1N60 mosfet

    Abstract: No abstract text available
    Text: 增強型場效應管 N-Channel Enhancement-Mode MOSFET FHK7N60 N-Channel Enhancement-Mode MOSFET 增強型場效應管 DESCRIPTION & FEATURES 概述及特點 TO-220F The FHK7N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate


    Original     		PDF FHK7N60 O-220F FHK7N60 O-220F 50VRG 1N60 mosfet

    DFLZ10

    Abstract: DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24
    Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features


    Original     		PDF DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ16

    marking Fhk

    Abstract: DFLZ10
    Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features


    Original     		PDF DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 marking Fhk

    marking Fhk

    Abstract: DFLZ5V6 DFLZ10
    Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ36 DFLZ39 DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI 123 Features • • •


    Original     		PDF DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 marking Fhk DFLZ5V6

    DFLZ33

    Abstract: zener diode 6.2v 1w DFLZ5V6 DFLZ10
    Text: SPICE MODEL: DFLZ5V1 DFLZ5V6 DFLZ6V2 DFLZ6V8 DFLZ7V5 DFLZ8V2 DFLZ9V1 DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ27 DFLZ33 DFLZ5V1 - DFLZ33 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI ä123 NEW PRODUCT Features • · · 1W Power Dissipation on FR-4 PCB


    Original     		PDF DFLZ10 DFLZ11 DFLZ12 DFLZ13 DFLZ15 DFLZ16 DFLZ18 DFLZ20 DFLZ22 DFLZ24 DFLZ33 zener diode 6.2v 1w DFLZ5V6

    DFLZ5V6

    Abstract: DFLZ10
    Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI 123 Features • • • • Mechanical Data • • 1W Power Dissipation on FR-4 PCB Lead Free Finish, RoHS Compliant Note 2 "Green" Molding Compound (No Br, Sb) Qualified to AEC-Q101 Standards for High Reliability


    Original     		PDF DFLZ39 AEC-Q101 J-STD-020D MIL-STD-202, DS30464 DFLZ5V6 DFLZ10

    cu marking code zener

    Abstract: DFLZ5V6 DFLZ10
    Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE PowerDI 123 Please click here to visit our online spice models database. Features • • • • Mechanical Data • • 1W Power Dissipation on FR-4 PCB Lead Free Finish, RoHS Compliant Note 2 "Green" Molding Compound (No Br, Sb)


    Original     		PDF DFLZ39 AEC-Q101 J-STD-020D MIL-STD-202, DS30464 cu marking code zener DFLZ5V6 DFLZ10

    DFLZ5V6

    Abstract: DFLZ10
    Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI123 Green Features Mechanical Data • • • • • • • 1W Power Dissipation on FR-4 PCB Lead-Free Finish; RoHS Compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)


    Original     		PDF DFLZ39 AEC-Q101 POWERDI123 J-STD-020 MIL-STD-202, DS30464 DFLZ5V6 DFLZ10

    DFLZ10

    Abstract: No abstract text available
    Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI123 Green Features Mechanical Data • 1W Power Dissipation on FR-4 PCB   Lead-Free Finish; RoHS Compliant Notes 1 & 2   Halogen and Antimony Free. “Green” Device (Note 3)


    Original     		PDF DFLZ39 POWERDI123 AEC-Q101 J-STD-020 DS30464 DFLZ10

    DFLZ9V1Q

    Abstract: No abstract text available
    Text: DFLZ5V1Q - DFLZ39Q 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI 123 Green Features Mechanical Data • 1W Power Dissipation on FR-4 PCB • • Large, exposed pad and heat sink designed for superior thermal • performance Case: POWERDI123 Case Material: Molded Plastic, “Green” Molding Compound. UL


    Original     		PDF DFLZ39Q POWERDI123 J-STD-020 AEC-Q101 DS36898 DFLZ9V1Q

    DFLZ5V6

    Abstract: DFLZ10
    Text: DFLZ5V1 - DFLZ39 1.0W SURFACE MOUNT POWER ZENER DIODE POWERDI123 Green Features Mechanical Data • 1W Power Dissipation on FR-4 PCB   Lead-Free Finish; RoHS Compliant Notes 1 & 2   Halogen and Antimony Free. “Green” Device (Note 3)


    Original     		PDF DFLZ39 POWERDI123 AEC-Q101 J-STD-020 DS30464 DFLZ5V6 DFLZ10