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    MARKING EW MOSFET Search Results

    MARKING EW MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    MARKING EW MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    vf152

    Abstract: vf170 NET125 VM MARKING CODE SOT23-5 DD157 VF140-1 VF154 NET127 NET128 DB105
    Text: sig n TSM105 • CONSTANT VOLTAGE AND CONSTANT Part Number Package Temperature Range TSM105CLT TSM105CD Marking L ew ■ ■ ■ ■ ORDER CODE CURRENT CONTROL LOW VOLTAGE OPERATION PRECISION INTERNAL VOLTAGE REFERENCE LOW EXTERNAL COMPONENT COUNT CURRENT SINK OUTPUT STAGE


    Original     		PDF TSM105 TSM105CLT TSM105CD TSM105 vf152 vf170 NET125 VM MARKING CODE SOT23-5 DD157 VF140-1 VF154 NET127 NET128 DB105

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C


    Original     		PDF DMP10H400SK3 ZXMP10A17K AEC-Q101 -100V O252-3L DS32028

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMC4040SSD 40V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary ID max A Device V(BR)DSS N EW PRODU CT Q1 RDS(on) max TA = 25°C Matched N & P RDS(on) - Minimizes power losses Fast switching – Minimizes switching losses


    Original     		PDF DMC4040SSD AEC-Q101 J-STD-020 DS32120

    Untitled

    Abstract: No abstract text available
    Text: CTA2N1P COMPLEX TRANSISTOR ARRAY Features N EW PRODU CT • • • • • A Combines MMBT4401 type transistor with BSS84 type MOSFET Small Surface Mount Package PNP/N-Channel Complement Available: CTA2P1N Lead Free/RoHS Compliant Note 2 "Green" Device (Note 3 and 4)


    Original     		PDF MMBT4401 BSS84 OT-363 J-STD-020C MIL-STD-202, DS30295

    Untitled

    Abstract: No abstract text available
    Text: DMP22D6UT N EW PRODU CT P-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 2


    Original     		PDF DMP22D6UT AEC-Q101 OT-523 J-STD-020D MIL-STD-202, DS31585

    Untitled

    Abstract: No abstract text available
    Text: DMN5L06DWK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance 1.0V max Very Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMN5L06DWK AEC-Q101 OT363 J-STD-020 DS30930

    DMN5L06DMK

    Abstract: No abstract text available
    Text: DMN5L06DMK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance


    Original     		PDF DMN5L06DMK AEC-Q101 OT-26 J-STD-020C DS30927 DMN5L06DMK

    Untitled

    Abstract: No abstract text available
    Text: DMP2004DMK DUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • Dual P-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage VGS th < 1V Low Input Capacitance


    Original     		PDF DMP2004DMK AEC-Q101 OT-26 J-STD-020C DS30939

    Untitled

    Abstract: No abstract text available
    Text: DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data Features N EW PRODU CT • • • • • • • • • Low On-Resistance • 29mΩ @VGS = 4.5V • 50mΩ @VGS = 2.5V • 100mΩ @VGS = 2.0V Very Low Gate Threshold Voltage Low Input Capacitance


    Original     		PDF DMN2050L AEC-Q101 OT-23 J-STD-020D DS31502

    Untitled

    Abstract: No abstract text available
    Text: DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


    Original     		PDF DMN2004DMK AEC-Q101 J-STD-020 DS30937

    SOT-353 MARKING G2

    Abstract: No abstract text available
    Text: DMN32D2LDF COMMON SOURCE DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • • Common Source Dual N-Channel MOSFET Low On-Resistance Very Low Gate Threshold Voltage, 1.2V max


    Original     		PDF DMN32D2LDF OT-353 J-STD-020C DS31238 SOT-353 MARKING G2

    Untitled

    Abstract: No abstract text available
    Text: DMN601DWK DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Mechanical Data N EW PRODU CT Features • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed


    Original     		PDF DMN601DWK OT-363 J-STD-020C MIL-STD-202, DS30656

    Untitled

    Abstract: No abstract text available
    Text: DMG1016UDW COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Features and Benefits Product Summary N EW PRODU CT Device Q1 Q2 V BR DSS 20V ID RDS(ON) TA = 25°C 0.45 @ VGS = 4.5V 1066mA 0.75 @ VGS =- 4.5V -845mA • Low On-Resistance • Low Gate Threshold Voltage


    Original     		PDF DMG1016UDW 1066mA -845mA AEC-Q101 DS31860

    Untitled

    Abstract: No abstract text available
    Text: DMN2215UDM DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features N EW PRODU CT • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance • 100mΩ @VGS = 4.5V, ID = 2.5A • 140mΩ @VGS = 2.5V, ID = 1.5A


    Original     		PDF DMN2215UDM AEC-Q101 OT-26 J-STD-020D DS31176

    Untitled

    Abstract: No abstract text available
    Text: DMN2004TK N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage ESD Protected up to 2kV


    Original     		PDF DMN2004TK AEC-Q101 OT-523 J-STD-020 MIL-STD-202, DS30936

    Untitled

    Abstract: No abstract text available
    Text: DMN2041L N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1


    Original     		PDF DMN2041L AEC-Q101 OT-23 J-STD-020 MIL-STD-202, DS31962

    Untitled

    Abstract: No abstract text available
    Text: DMG1024UV N EW PRODU CT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF DMG1024UV AEC-Q101 OT-563 J-STD-020 DS31974

    Untitled

    Abstract: No abstract text available
    Text: DMG2302U N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)


    Original     		PDF DMG2302U AEC-Q101 OT-23 J-STD-020D MIL-STD-202, DS31838

    DMS2120LFWB

    Abstract: No abstract text available
    Text: DMS2120LFWB N EW PRODU CT P-CHANNEL ENHANCEMENT MODE MOSFET WITH INTEGRATED SBR Features Mechanical Data • • • • • • • • • • • Low On-Resistance • 95mΩ @VGS = -4.5V • 120mΩ @VGS = -2.5V • 150mΩ typ @VGS = -1.8V Low Gate Threshold Voltage, -1.3V Max


    Original     		PDF DMS2120LFWB AEC-Q101 DFN3020B-8 J-STD-020D DS31667 DMS2120LFWB

    Untitled

    Abstract: No abstract text available
    Text: 2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET N EW PRODU CT Features • • • • • • • • • • Mechanical Data • • Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage


    Original     		PDF 2N7002VC/VAC AEC-Q101 OT563 J-STD-020 DS30639

    Untitled

    Abstract: No abstract text available
    Text: A Product Line of Diodes Incorporated DMC2700UDM 20V COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • • • • • • • • • • • N EW PRODU CT ID max Device V BR DSS RDS(on) max TA = 25°C (Notes 4) Q1 0.4Ω @ VGS = 4.5V


    Original     		PDF DMC2700UDM DS35360

    Untitled

    Abstract: No abstract text available
    Text: DMN26D0UT N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Low On-Resistance: • 3.0 Ω @ 4.5V • 4.0 Ω @ 2.5V • 6.0 Ω @ 1.8V • 10 Ω @ 1.5V Very Low Gate Threshold Voltage, 1.0V max


    Original     		PDF DMN26D0UT AEC-Q101 OT-523 J-STD-020 DS31854

    Untitled

    Abstract: No abstract text available
    Text: DMG4468LFG N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)


    Original     		PDF DMG4468LFG AEC-Q101 DFN3030-8 J-STD-020 DS31857

    Untitled

    Abstract: No abstract text available
    Text: DMG6402LDM N EW PRODU CT N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • Low RDS ON Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant (Note 1) Qualified to AEC-Q101 Standards for High Reliability


    Original     		PDF DMG6402LDM AEC-Q101 OT-26 J-STD-020 MIL-STD-202, DS31839