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    MARKING ET DIODES Search Results

    MARKING ET DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING ET DIODES Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: BZT52-B13US Surface Mount Silicon Zener Diodes VOLTAGE 13.7 V Features  Planar Die Construction  200mW Power Dissipation  Ideally Suited for Automated Assembly Process  Lead free in compliance with EU RoHS 2011/65/EU directive.  Green molding compound as per IEC61249 Std.


    Original     		PDF BZT52-B13US 200mW 2011/65/EU IEC61249 OD-323, MIL-STD-750, 2014-REV 625lications

    1S2473 DIODE equivalent

    Abstract: 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx
    Text: Status List HITACHI DIODE Vol.16-4 2002.11 Topic - Miniature Flat Lead Package Diode “HSN278WK” .2 Variable Capacitance Diodes for Electronic Tuning .4, 5


    Original     		PDF HSN278WK" HZC10 HZC11 HZC12 HZC13 HZC15 HZC16 HZC18 HZC20 HZC22 1S2473 DIODE equivalent 1S2473 equivalent diode cross reference 1s2473 DIODE marking S4 59A marking 62N SOT23 1S2471 equivalent UHF/VHF TV Tuner HITACHI DIODE 1N4148 LL-34 DIODE ZENNER C25 1N52xx

    Untitled

    Abstract: No abstract text available
    Text: 9 =W S age C3 P H Ro oir / See E - C4 E C3 N - C4 N CAPACITANCE NETWORKS - RC NETWORKS Tension nominale / Rated voltage URC V 2 3 2 3 4 1 2 3 4 0,78 0,45 C1 = C2 = C3 = C4 1 C1 1 2 3 C2 4 C3 2 C4 3 4 Sur demande / On request : C1 # C2 # C3 # C4 Consulter notre Service Commercial


    Original     		PDF E12E24E48 200il F-67441

    Ceramic Capacitors

    Abstract: sic-safco capacitor capacitor sic-safco Sic-Safco tableau des boitiers cms FIRADEC condensateur chimique 1000 uf EUROFARAD smd ceramic capacitor Microspire varistance
    Text: 082 Paris Colombes St Nazaire Illange Lagny Marmoutier EUROFARAD Siège social / Headquarters 93, rue Oberkampf F - 75540 PARIS CEDEX 11 Tél. : +33 0 1 49 23 10 00 E-mail : info @ eurofarad.com www.eurofarad.com FIRADEC Casablanca Usines / Plants 23, rue Jeanne d'Arc


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: Surface Mount Zener Diodes 1.0 W Device Marking Code Nominal Zen. Vltg. @ IZT Test Current VZT V 6.8 7.5 8.2 9.1 10.0 11.0 12.0 13.0 15.0 16.0 18.0 20.0 22.0 24.0 27.0 30.0 33.0 36.0 39.0 43.0 47.0 51.0 56.0 62.0 68.0 75.0 82.0 91.0 100.0 Part No. SMAJ4736A


    Original     		PDF SMAJ4736A SMAJ4737A SMAJ4738A SMAJ4739A SMAJ4740A SMAJ4741A SMAJ4742A SMAJ4743A SMAJ4744A SMAJ4745A

    data sheet for all smd components

    Abstract: SOD123F transistor smd code marking 420 PMEG3010EH PMEG3010EJ PMEG3010ET SOT23 DIODE marking CODE AV 006aaa436
    Text: PMEG3010EH; PMEG3010EJ; PMEG3010ET 1 A very low VF MEGA Schottky barrier rectifiers Rev. 04 — 20 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifiers with an


    Original     		PDF PMEG3010EH; PMEG3010EJ; PMEG3010ET PMEG3010EH OD123F PMEG3010EJ OD323F SC-90 O-236AB data sheet for all smd components SOD123F transistor smd code marking 420 PMEG3010EH PMEG3010EJ PMEG3010ET SOT23 DIODE marking CODE AV 006aaa436

    smd diode MARKING F6

    Abstract: smd diode F6 DIODE F7 SMD smd marking H6 Diode smd f6 SMD F6 DIODE diode smd ED 68 diode smd ED 84 smd diode E7 smd diode h9
    Text: Diodes SMD Type Zener Diodes BZX585 Series Features Total Power Dissipation: Max. 300mW Two Tolerance Series: 2% and 5% Working Voltage Range: Nom. 2.4 to 75V Absolute Maximum Ratings Ta = 25 Parameter Total Power Dissipation Symbol Rating Unit Ptot 300


    Original     		PDF BZX585 300mW BZX585 smd diode MARKING F6 smd diode F6 DIODE F7 SMD smd marking H6 Diode smd f6 SMD F6 DIODE diode smd ED 68 diode smd ED 84 smd diode E7 smd diode h9

    smd diode a9 SOT23

    Abstract: diode MARKING CODE A9 diode MARKING CODE A9 sot23 data sheet for all smd components transistor smd code marking 420 PMEG2010EH PMEG2010EJ PMEG2010ET smd diode marking AH a9 marking schottky diode sot23
    Text: PMEG2010EH; PMEG2010EJ; PMEG2010ET 1 A very low VF MEGA Schottky barrier rectifiers Rev. 04 — 20 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifiers with an


    Original     		PDF PMEG2010EH; PMEG2010EJ; PMEG2010ET PMEG2010EH OD123F PMEG2010EJ OD323F SC-90 O-236AB smd diode a9 SOT23 diode MARKING CODE A9 diode MARKING CODE A9 sot23 data sheet for all smd components transistor smd code marking 420 PMEG2010EH PMEG2010EJ PMEG2010ET smd diode marking AH a9 marking schottky diode sot23

    sot23-4 marking al

    Abstract: data sheet for all smd components transistor smd code marking 420 PMEG4010EH PMEG4010EJ PMEG4010ET AB marking code smd schottky diode
    Text: PMEG4010EH; PMEG4010EJ; PMEG4010ET 1 A very low VF MEGA Schottky barrier rectifiers Rev. 04 — 21 March 2007 Product data sheet 1. Product profile 1.1 General description Planar Maximum Efficiency General Application MEGA Schottky barrier rectifiers with an


    Original     		PDF PMEG4010EH; PMEG4010EJ; PMEG4010ET PMEG4010EH OD123F PMEG4010EJ OD323F SC-90 O-236AB sot23-4 marking al data sheet for all smd components transistor smd code marking 420 PMEG4010EH PMEG4010EJ PMEG4010ET AB marking code smd schottky diode

    marking code 68W

    Abstract: marking code 68W sot 68W SOT MARKING 68W SOT-23 MARKING 68W 68w diode
    Text: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W BAT68-06W »1/kl C1/C2 R _ 0 _ "ET T lT Tj Type Marking Ordering Code Pin Configuration BAT 68-04W


    OCR Scan     		PDF 8-04W BAT68-05W BAT68-06W 8-04W 8-05W 8-06W Q62702Q62702Q62702Q62702- OT-323 OT-323 marking code 68W marking code 68W sot 68W SOT MARKING 68W SOT-23 MARKING 68W 68w diode

    15c sot 23 marking

    Abstract: VR7A marking 15c
    Text: SIEMENS BAT 17W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high-speed switching BAT 17-04W BAT 17-05W C l/M CI/C2 J *L -EL "0 EJ [J BAT 17-06W ET Type Marking Ordering Code Pin Configuration BAT 17-04W


    OCR Scan     		PDF 7-04W 7-05W 7-06W 7-04W 7-05W 7-06W BAT17W OT-323 15c sot 23 marking VR7A marking 15c

    marking code 68W

    Abstract: No abstract text available
    Text: SIEMENS BAT 68W Silicon Schottky Diodes Preliminary data • For mixer applications in the VHF/UHF range • For high speed switching BAT 68-04W BAT68-05W CI/A2 A t/M FL _0_ U BAT68-06W C1/C2 HT • n HT U ET Type Marking Ordering Code Pin Configuration BAT 68-04W


    OCR Scan     		PDF 8-04W BAT68-05W BAT68-06W Q62702- OT-323 8-05W 8-06W marking code 68W

    sy 320 diode

    Abstract: No abstract text available
    Text: P h ilip s Se m ico n d u cto rs P re lim in sry specification Schottky barrier diodes FEA T U R ES BAT54W series Q U IC K R E F E R EN C E DATA • Ultra-fast switching speed • Low forward voltage SY M B O L PA RAM ET ER CO N DITIO N S UNIT MAX. Per diode


    OCR Scan     		PDF BAT54W SA891 M80O46 sy 320 diode

    diode 698

    Abstract: DIODE REDRESSEMENT diodes redressement thomson Diodes de redressement
    Text: BYV 10-20 —►B YV 10-4 THOMSON SEMICONDUCTORS SCHOTTKY RECTIFIER .DIODES, DIODES DE REDRESSEMENT'! SCHOTTKY . *»? : -. 'o - 1 A*/Tamb - 80°C Metal to atficon rectifier diodes in glees case featuring very low forward voltage drop and fast recovery time, intented for low voltage switching


    OCR Scan     		PDF

    diodes B2V

    Abstract: B50C marking 27.A STG-65 Thomson BZV BZV27 general semiconducteur thomson diodes
    Text: L S G | s^c D S -T H O M S O N Q 7^23? aooasbD □ THOMSON-C5F * BZV27,A — BZV31,A DIVISION SEMICONDUCTEURS VOLTAGE REFERENCE DIODES TEMPERATURE COMPENSATED ^ D IO D E S D E R É F É R E N C E D E T E N S IO N ! C O M P E N S É E S E N T E M P É R A T U R E )


    OCR Scan     		PDF 7T5TE37 B50C-+ 1750C diodes B2V B50C marking 27.A STG-65 Thomson BZV BZV27 general semiconducteur thomson diodes

    F600M

    Abstract: S08230 l32 sot23 hp 3080 diode MARK, g5 sot23
    Text: ¥J>0%. HEWLETT ft "Em PACKARD Surface Mount PIN Diodes Technical Data HSMP-38XX and HSMP-48XX Series Features • Diodea Optimized fo r Low Current Switching Low Distortion Attenuating Ultra-Low Distortion Switching Microwave Frequency Operation • Surface M ount SOT-23


    OCR Scan     		PDF HSMP-38XX HSMP-48XX OT-23 HEWPS057P* 6091-4211E 5091-B184E F600M S08230 l32 sot23 hp 3080 diode MARK, g5 sot23

    BAX12

    Abstract: BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes
    Text: general purpose and switching diodes 1* diodes d'usage général et de com m utation Types •f AV VF @ lF |R @ V R V RM* (V) (mA) max (V) (mA) max (nA) (V) BAL74 50 70 1 100 100 50 BAL 99 70 70 1,3 100 2500 70 BAR 74 SD 914 BAS 16 SD BAX12 50 75 75 90(3)


    OCR Scan     		PDF BAX12 BAX12 BAY85S MARKING D53 marking IAY marking JB diode BAV70 BAV74 BAW56 BAT18DK Thomson-CSF diodes

    SI 1050 GH

    Abstract: GH-1E GU-1C GU-1Z GU-3C MARKING GU ES01 ES01A ES01F ES01Z
    Text: SANKEN ELECTRIC U S A H E Fast Recovery Diodes D I ? 741 ODDDI ET fi | • Io : 0 .3 -1 .2 A IVrm: 100—1500V " 0 I- O I T RH/ES/RS/RH/GU/RU/GH/EU Io A V rm (V) V rsm (V) Type N o \ ^ RH 1Z RH 1 RH 1A RH 1B RH 1C ES01Z ES01 ES01A ES01F ES 1Z ES 1 ES 1A


    OCR Scan     		PDF ES01Z SI 1050 GH GH-1E GU-1C GU-1Z GU-3C MARKING GU ES01 ES01A ES01F

    Zener diode 83C 12

    Abstract: diode zener 6V8 BZX C 55 8ZX83C BZX marking diode diode zener BZX 70 C 10 Zener diode 83C 24 bzx 85 zener zener diode b2x BZX83C diode zener 6V8 BZX C 83
    Text: S G S— THOMSON _ SIC D £ O THOMSON-CSF DIV IS IO N S EM IC O N DUCTE UR S Q0Q247M 7 BZX83C2V4 — BZX83C75 - • ZENER DIODES 5 9C 0 2 4 7 4 D T ~ D ' I f D IO D E S Z E N E R P tot = 600 m W 500 mW hermetically sealed glass silicon Zener diodes offering the following advantages :


    OCR Scan     		PDF Q0Q247M BZX83C2V4 BZX83C75 Zener diode 83C 12 diode zener 6V8 BZX C 55 8ZX83C BZX marking diode diode zener BZX 70 C 10 Zener diode 83C 24 bzx 85 zener zener diode b2x BZX83C diode zener 6V8 BZX C 83

    ST03D-170

    Abstract: ST03D170 J3 DIODE ST U180 n 10 q Zener Diode marking 3a st03d
    Text: Power-Clamper Axial Device Zener Diodes with Fast Recovery Diode • f t M U ! OUTLINE S T 03D -170 Package : AX10 Unit:mm & Weight 0.65 g 170V 300W O ftft D -©■ I 1 26.5 7 P <¿>4.4 26.5 Feature ° - ■ Power Zener Diodes with FRD


    OCR Scan     		PDF ST03D-170 -20mV wavefi50HzTiS ST03D-170 ST03D170 J3 DIODE ST U180 n 10 q Zener Diode marking 3a st03d

    IN973b

    Abstract: 1N4370A IN746A IN967B 1N892 IN4372 IN992 1N744 IN970B 1N857
    Text: S^C D 1 . 7 ^ 2 3 7 S G S —THOMSON . O : T H O M S O N -C S F ' i - Z — 1 N 9 5 7 B DIVISION SEMICQNDUCTEUBS— 59C aü02m5 02415 — i 1 N 9 9 2 B ZENER DIODES DIODES ZENER P to t = 400 m W 6Æ V< VCTnom < 200V 400 mW hermetically sealed glass silicon Zener


    OCR Scan     		PDF 1N957B 400mW 15permet IN973b 1N4370A IN746A IN967B 1N892 IN4372 IN992 1N744 IN970B 1N857

    Untitled

    Abstract: No abstract text available
    Text: SILICON EPITAXIAL PLANAR TYPE Unit in mm ULTRA HIGH SPEED SWITCHING APPLICATION. + 0.2 2 .8 -0 3 + 0.2 . HN2D01F is composed of 3 independent diodes, . T.ow Forward Voltage 1.6 - 0.1 : Vp=0.98V Typ. D6 . Fast Reverse Recovery Time : trr= 1.6ns (Typ.) . Small. Total Capacitance


    OCR Scan     		PDF HN2D01F HN2D01F

    Power DIODES, toshiba

    Abstract: ZA8-2 01ZA8 toshiba toshiba marking Information
    Text: TOSHIBA 01ZA8.2 TOSHIBA DIODES FOR PROTECTING AGAINST ESD EPITAXIAL PLANAR TYPE 01 Z A 8 . 2 Unit in mm DIODES FOR PROTECTING AGAINST ESD • 1.6 ± 0.1 0.85 ±0.1 Because two devices are mounted on an ultra compact package, it is possible to allow reducing the number of the


    OCR Scan     		PDF 01ZA8 Power DIODES, toshiba ZA8-2 toshiba toshiba marking Information

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS BAS 125W Silicon Schottky Diodes Preliminary data • For low-loss, fast-recovery, meter protection, bias isolation and clamping application • Integrated diffused guard ring • Low forward voltage BAS 125-04W BAS 125-06W A1/A2 JZL III ET Cl C2 CHMT1I


    OCR Scan     		PDF 25-04W 25-06W Q62702- OT-323 25-05W