1443557
Abstract: JGL36250 JJL36250 1432555 1453586 JLL36250 1453552 1433553 1413400 FPB23570CH
Text: 13300 Van Camp Road P.O. Box 468 Bowling Green, OH 43402 Standard Power Distribution Blocks With High Short-Circuit Current Ratings Marathon offers 600 Volt Power Distribution Blocks with high SCCR’s in response to new 2005 NEC and UL508A marking requirements
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UL508A
1443557
JGL36250
JJL36250
1432555
1453586
JLL36250
1453552
1433553
1413400
FPB23570CH
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PDF
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C541U
Abstract: C541U-1E
Text: Microcontrollers Errata Sheet 29 June 2001 / Release 1.5 Device: Stepping Code / Marking: Package: C541U-1E CA P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
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C541U-1E
P-LCC-44
P-SDIP-52
C541U-1E,
C541U
C541U-1E
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C541U
Abstract: C541U-1E
Text: Microcontrollers Errata Sheet Nov 11, 1999 / Release 1.2 Device: Stepping Code / Marking: Package: C541U-1E CA P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
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Original
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C541U-1E
P-LCC-44
P-SDIP-52
C541U.
C541U,
C541U
C541U-1E
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PDF
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C541U
Abstract: C541U-1E full-64
Text: Microcontrollers Errata Sheet Aug 1, 1999 / Release 1.1 Device: Stepping Code / Marking: Package: C541U-1E CA P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
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Original
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C541U-1E
P-LCC-44
P-SDIP-52
C541U.
C541U,
C541U
C541U-1E
full-64
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PDF
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C541U
Abstract: C541U-1E P-SDIP-52
Text: Microcontrollers Errata Sheet 10 July 2001 / Release 1.5 Device: Stepping Code / Marking: Package: C541U-1E ES-B12 P-LCC-44 P-SDIP-52 This Errata Sheet describes the deviations from the current user documentation. The classification and numbering system is module oriented in a continual ascending sequence
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Original
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C541U-1E
ES-B12
P-LCC-44
P-SDIP-52
C541U,
C541U
C541U-1E
P-SDIP-52
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C C C IC = 20A, TC =100°C TJ max = 150°C G G VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PK35UD1PbF IRG7PK35UD1-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 1400V C G G IC = 20A, TC =100°C TJ max = 150°C VCE(ON) typ. = 2.0V @ IC = 20A E n-channel Applications • Induction heating Microwave ovens
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Original
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IRG7PK35UD1PbF
IRG7PK35UD1-EPbF
IRG7PK35UD1PbFÂ
247ACÂ
IRG7PK35UD1â
247ADÂ
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790PbF TO-247AC E n-channel Applications
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IRGP4790PbF
IRGP4790-EPbF
IRGP4790PbFÂ
247ACÂ
IRGP4790â
247ADÂ
IRGP4790PbF/IRGP4790-EPbF
O-247AC
JESD47F)
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4790PbF IRGP4790-EPbF Insulated Gate Bipolar Transistor VCES = 650V IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C E G VCE(ON) typ. = 1.7V @ IC = 75A C G IRGP4790PbF TO-247AC E n-channel Applications • Industrial Motor Drive
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Original
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IRGP4790PbF
IRGP4790-EPbF
IRGP4790PbFÂ
247ACÂ
IRGP4790â
247ADÂ
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters
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Original
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IRGP4263PbF
IRGP4263-EPbF
IRGP4263PbFÂ
IRGP4263â
IRG7P4263PbF
IRG7P4263-EPbF
O-247AC
O-247AD
IRGP4263PbF/IRGP4263-EPbF
JESD47F)
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PG35UPbF IRG7PG35U-EPbF INSULATED GATE BIPOLAR TRANSISTOR Features • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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IRG7PG35UPbF
IRG7PG35U-EPbF
O-247AC
O-247AD
IRG7PG35UPbF/IRG7PG35U-EPbF
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0/b40 B2 RECTIFIER 400V
Abstract: IRGP4266 2.5/b40 B2 RECTIFIER 400V
Text: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C G G IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C C G G VCE(ON) typ. = 1.7V @ IC = 75A E IRGP4266PbF TO-247AC n-channel Applications • Industrial Motor Drive Inverters
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Original
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IRGP4266PbF
IRGP4266-EPbF
IRGP4266-EPbF
O-247AD
O-247AC
O-247AC
0/b40 B2 RECTIFIER 400V
IRGP4266
2.5/b40 B2 RECTIFIER 400V
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4266PbF IRGP4266-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 90A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 75A G E G Gate Low VCE(ON) and switching Losses Square RBSOA and Maximum Junction Temperature 175°C
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IRGP4266PbF
IRGP4266-EPbF
O-247AC
O-247AD
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PDF
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IRG7
Abstract: No abstract text available
Text: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF TO247AC E n-channel Applications • Industrial Motor Drive • Inverters
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Original
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IRGP4263PbF
IRGP4263-EPbF
O247AC
O-247AD
IRG7P4263PbF
IRG7P4263-EPbF
O-247AC
IRG7
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Untitled
Abstract: No abstract text available
Text: IRGP4263PbF IRGP4263-EPbF Insulated Gate Bipolar Transistor C VCES = 650V G G IC = 54A, TC =100°C tSC 5.5µs, TJ max = 175°C G VCE(ON) typ. = 1.7V @ IC = 48A C G IRGP4263PbF E n-channel Applications • Industrial Motor Drive • Inverters
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Original
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IRGP4263PbF
IRGP4263-EPbF
IRGP4263PbF
RGP4263EPbF
IRG7P4263PbF
IRG7P4263-EPbF
IRGP4263PbF/IRGP4263-EPbF
O-247AC
O-247AD
JESD47F)
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4760PbF IRGP4760-EPbF Insulated Gate Bipolar Transistor VCES = 650V C IC = 60A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 48A C n-channel G Gate C Collector Features E Emitter Benefits Low VCE(ON) and Switching Losses
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IRGP4760PbF
IRGP4760-EPbF
IRGP4760â
247ADÂ
IRGP4760PbFÂ
247ACÂ
O-247AC
JESD47F)
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4262DPbF IRGP4262D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C G G IC = 40A, TC =100°C tSC 5.5µs, TJ max = 175°C G C VCE(ON) typ. = 1.7V @ IC = 24A C n-channel Applications G Gate E G IRGP4262D-EPbF
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Original
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IRGP4262DPbF
IRGP4262D-EPbF
O-247AD
O-247AC
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PDF
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Untitled
Abstract: No abstract text available
Text: IRG7PG42UDPbF IRG7PG42UD-EPbF INSULATED GATE BIPOLAR TRANSISTOR C Features • Low VCE ON trench IGBT technology Low switching losses Square RBSOA 100% of the parts tested for ILM Positive VCE (ON) temperature co-efficient
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Original
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IRG7PG42UDPbF
IRG7PG42UD-EPbF
IRG7PG42UDPbF/IRG7PG42UD-EPbF
O-247AC
JESD47F)
O-247AD
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PDF
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IRGP4740DPBF
Abstract: No abstract text available
Text: IRGP4740DPbF IRGP4740D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 40A, TC =100°C tSC ≥ 5.5µs, TJ max = 175°C G G VCE(ON) typ. = 1.7V @ IC = 24A E G G Gate C Collector Features C E IRGP4740D-EPbF TO-247AD
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Original
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IRGP4740DPbF
IRGP4740D-EPbF
O-247AD
O-247AC
IRGP4740DPbF/IRGP4740D-EPbF
JESD47F)
IRGP4740DPBF
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PDF
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Untitled
Abstract: No abstract text available
Text: IRGP4750DPbF IRGP4750D-EPbF Insulated Gate Bipolar Transistor with Ultrafast Soft Recovery Diode VCES = 650V C IC = 50A, TC =100°C tSC 5.5µs, TJ max = 175°C E G VCE(ON) typ. = 1.7V @ IC = 35A C G IRGP4750DPbF TO-247AC E n-channel Applications
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Original
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IRGP4750DPbF
IRGP4750D-EPbF
IRGP4750DPbFÂ
247ACÂ
IRGP4750Dâ
247ADÂ
IRGP4750DPbF/IRGP4750D-EPbF
JESD47F)
O-247AC
O-247AD
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PDF
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Untitled
Abstract: No abstract text available
Text: Home Phone Networking Transformer ELECTRONICS INC. EPB5211G • Designed for HPNA Filter Bridge Applications • Withstands IR Reflow Profile Processes • Hipot : 850 Vrms 1 second, Pri.-Sec. Electrical Parameters @ 25° C DCR (mΩ Max.) Primary OCL (µH ± 5%)
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EPB5211G
EPB5211G
05orted
CSB5211G
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PDF
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Untitled
Abstract: No abstract text available
Text: Extract from the online catalog 4K-DST 6 FARBLOS Order No.: 1020034 4-chamber marker carriers, can be optionally labeled with insert strips ES. or 4 snap-in profiles EPB Product notes
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PDF
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marking EPB
Abstract: No abstract text available
Text: Extract from the online catalog 4K-DST 6 FARBLOS Order No.: 1020034 4-chamber marker carriers, can be optionally labeled with insert strips ES. or 4 snap-in profiles EPB Product notes
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PDF
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Untitled
Abstract: No abstract text available
Text: P - P * # - f * - K Super F ast Recovery Diode Axial Diode OUTLINE DIMENSIONS S3L60 Case : 1 .4 f 25 =1 600V 2.2A § 25 ±2 7 -°" i a+0 2 ^ 4.4 -o.i i * •S B Œ L L D î 0 CD H o (D •trr 5 0 n s If ) ^ Color code (Blue) sk^ epbhbbh Marking ffl m S3L
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OCR Scan
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S3L60
0033ti
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PDF
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