Untitled
Abstract: No abstract text available
Text: Not Recommended for New Design A Product Line of Diodes Incorporated Use DMP10H400SK3 ZXMP10A17K 100V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C
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DMP10H400SK3
ZXMP10A17K
AEC-Q101
-100V
O252-3L
DS32028
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N223
Abstract: a5 marking
Text: CM1420, CM1422 LCD EMI Filter Array with ESD Protection Description The CM1420 and CM1422 are EMI filter arrays with ESD protection, which integrate six and eight Pi−filters C−R−C , respectively. The CM1420/22 has component values of 15 pF − 100 W − 15 pF. These devices include ESD protection diodes on every
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CM1420,
CM1422
CM1420
CM1420/22
MIL-STD-883
CM1420/D
N223
a5 marking
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Untitled
Abstract: No abstract text available
Text: CM1420, CM1422 LCD EMI Filter Array with ESD Protection Description The CM1420 and CM1422 are EMI filter arrays with ESD protection, which integrate six and eight Pi−filters C−R−C , respectively. The CM1420/22 has component values of 15 pF − 100 W − 15 pF. These devices include ESD protection diodes on every
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CM1420,
CM1422
CM1420
CM1422
CM1420/22
CM1420/D
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MAZS0750H
Abstract: MAZS024 MAZS027 MAZS0270H MAZS0270L MAZS030 MAZS082 MAZS0820H MAZS0820L MAZS0820M
Text: Zener Diodes MAZSxxx Series Silicon planar type Unit: mm For constant voltage, constant current, waveform clipper and surge absorption circuit 0.60+0.05 –0.03 0.12+0.05 –0.02 0.80+0.05 –0.03 Rating Unit IFRM 200 mA Ptot 150 mW Junction temperature Tj
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IEC1000-4-2
Abstract: MAZT062H MAZT068H MAZT082H 6.8z
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZTxxxH Series Silicon planar type M Di ain sc te on na tin nc ue e/ d For surge absorption circuit • Package ■ Features • Pin Name SSMini3-F2 • Pin Name 1: Cathode 1 2: Cathode 2
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2002/95/EC)
IEC1000-4-2
MAZT062H
MAZT068H
MAZT082H
6.8z
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marking ld3
Abstract: DIODE marking ED BAT54 BAT54A BAT54C BAT54S marking kv3 surface mount marking bg vr 1
Text: Surface Mount Schottky Barrier Diode BAT54 / BAT54A / BAT54C / BAT54S Features A Low Turn-on Voltage Fast Switching PN Junction Guard Ring for Transient and ESD Protection Mechanical Data 1 3 To p Vie w V Case: Molded Plastic Terminals: Solderable per MIL-STD-202,
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BAT54
BAT54A
BAT54C
BAT54S
MIL-STD-202,
marking ld3
DIODE marking ED
BAT54S
marking kv3
surface mount marking bg vr 1
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MAZS056G0L
Abstract: MAZS390G MAZS027GHL
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZSxxxG Series Silicon planar type For constant voltage, constant current, waveform clipper and surge absorption circuit • Package Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b
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2002/95/EC)
MAZS056G0L
MAZS390G
MAZS027GHL
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Untitled
Abstract: No abstract text available
Text: ERC37-10 1000V / 1.2A Voltage class, Lot No. Cathode mark Ø 4.0±0.2 28 min. Ø 1.0±0.05 Outline drawings, mm FAST RECOVERY DIODE 28 min. 7.5±0.2 Features High speed switching High reliability by planer design Moldingresin : Epoxy resin UL : V-0 Marking
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ERC37-10
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NT 101
Abstract: MA8000 MAZ8024 MAZ8027 MAZ8030 MAZ8033 MAZ8036 MAZ8082 SC-76 and/termistor nt 101
Text: This product complies with the RoHS Directive EU 2002/95/EC . Zener Diodes MAZ8xxx Series (MA8000 Series) Silicon planar type Unit: mm For stabilization of power supply 1.25±0.1 0.7±0.1 M Di ain sc te on na tin nc ue e/ d 0.35±0.1 1 • Features Parameter
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2002/95/EC)
MA8000
SC-76
MAZ8082:
NT 101
MAZ8024
MAZ8027
MAZ8030
MAZ8033
MAZ8036
MAZ8082
SC-76
and/termistor nt 101
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ED marking code diode
Abstract: No abstract text available
Text: CM1204 4-Channel ESD Array in CSP Product Description The CM1204 is a quad ESD transient voltage suppression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge
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CM1204
MIL-STD-883
CM1204/D
ED marking code diode
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Untitled
Abstract: No abstract text available
Text: CSPESD304 4-Channel ESD Array in CSP Product Description The CSPESD304 is a quad ESD transient voltage suppression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge
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CSPESD304
CSPESD304
CSPESD304/D
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Untitled
Abstract: No abstract text available
Text: CSPESD304 4-Channel ESD Array in CSP Product Description The CSPESD304 is a quad ESD transient voltage suppression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge
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CSPESD304
MIL-STD-883
CSPESD304/D
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Untitled
Abstract: No abstract text available
Text: CM1204 4-Channel ESD Array in CSP Product Description The CM1204 is a quad ESD transient voltage suppression diode array. Each diode provides a very high level of protection for sensitive electronic components that may be subjected to electrostatic discharge
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CM1204
CM1204
MIL-STD-883
CM1204/D
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marking cj4
Abstract: s6 smc schottky marking code s4 SMc S4 SMB MARKING CODE S1M SMA SJ SMB marking SS24 SMC MARKING SJ marking ED smb SS16 SMB
Text: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 40A, 50A OR 100A • UL 94V-0 PLASTIC PACKAGE ACCEPTS HIGH TEMP. SOLDERING: 250˚C FOR 10s AT TERMINALS
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DIODE marking ED
Abstract: marking ya 71A marking GI 536 POWER 15X15 SC802-09 sc802
Text: SC802-09 1 .OA • Outline Drawing SCHOTTKY BARRIER DIODE I Features • • • • Surface mount device Lo w V f Super high speed switching High reliability by planer design -CATHOOE MARKING -SYMBOL I ED 1 14 H Applications - LOT NO.
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SC802-09
500ns,
110oC,
DIODE marking ED
marking ya
71A marking
GI 536 POWER
15X15
SC802-09
sc802
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Untitled
Abstract: No abstract text available
Text: ERB83-006 2a : Outline Drawings SCHOTTKY BARRIER DIODE : Features : Marking Low VF • X -f y ^ ^ f c r - K ^ t t l c a v . ' * 7 - 3 - K Hi Color code : Super high speed switching. High reliability by planer design. A bridg ed typ e name S E ? 5 7. : Applications
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ERB83-006
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diode MARKING ED
Abstract: GENERAL SEMICONDUCTOR MARKING ed
Text: TOSHIBA 1SV214 TOSHIBA VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR TYPE 1 SV 2 1 4 Unit in mm TV TUNING. • High Capacitance Ratio : C2V / C25V = 6.5 Typ. • Low Series Resistance : rs = 0.4(1 (Typ.) • Excellent C-V Characteristics, and Small Tracking Error.
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1SV214
diode MARKING ED
GENERAL SEMICONDUCTOR MARKING ed
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TRANSISTOR BC 208
Abstract: bu208D bc 301 transistor BF56 MU diode MARKING CODE Bu 208 D transistor Bu 208 TRANSISTOR BC 208 B M2517
Text: 17E D TELEFUNKEN ELECTRONIC m fi^QO^b QDQRMSR • ALGG BU 208 D ■ffmewraiH! electronic Crtativ« TKhnot6g<e9 r-33-c? Silicon NPN Power Transistor A pplications: Horizontal deflection circuits In colour TV-receivers Features: • Monolithic integrated inverse diode
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r-33-c?
TRANSISTOR BC 208
bu208D
bc 301 transistor
BF56
MU diode MARKING CODE
Bu 208 D
transistor Bu 208
TRANSISTOR BC 208 B
M2517
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DTZ6.8B
Abstract: DTZ33B PTZ27A dt2 marking code RLZJ6.8B RLS135 DTZ30C DTZ9.1 zener dtz33B
Text: Part Marking Mold type § Diodes 185 Part Marking @ Z e n e r Diodes (PTZ Series Mold type Q Z e n e r Diodes (DTZ Series) Part No. CD Part No. 0 0 1 1 2 2 3 3 4 4 5 5 6 6 7 7 8 8 8 9 9 9 A A A C C C E E E F F F H H H J J J L L L 1 2 1 2 1 2 1 2 1 2 1 2
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PTZ10A
RLZ39
RL/-39
RLZ51
RL756
DTZ6.8B
DTZ33B
PTZ27A
dt2 marking code
RLZJ6.8B
RLS135
DTZ30C
DTZ9.1
zener dtz33B
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Untitled
Abstract: No abstract text available
Text: T O SH IB A TVR4J,TVR4N TOSHIBA FAST RECOVERY DIODE SILICON DIFFUSED TYPE TVR4J, TVR4N HIGH SPEED RECTIFIER APPLICATIONS. FAST RECOVERY • • • Unit in mm Repetitive Peak Reverse Voltage : Vrrm = 600, 1000V Average Forward Current : Ip(AV) = 1-2A (Ta = 55°C)
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Untitled
Abstract: No abstract text available
Text: 1SV172 TO SHIBA 1 S V 1 72 TOSHIBA DIODE SILICON EPITAXIAL PIN TYPE Unit in mm V H F- U H F BAND RF ATTENUATOR APPLICATIONS. M A X IM U M RATINGS Ta = 25°C SYMBOL CHARACTERISTIC Reverse Voltage Forward Current Junction Temperature Storage Temperature Range
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1SV172
SC-59
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Untitled
Abstract: No abstract text available
Text: T O SH IB A 5DL2CZ47A,5FL2CZ47A,5GL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 5DL2CZ47A, 5FL2CZ47A, 5GL2CZ47A Unit in mm SWITCHING TYPE PO W ER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION 10.3MAX. • Repetitive Peak Reverse Voltage
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5DL2CZ47A
5FL2CZ47A
5GL2CZ47A
5DL2CZ47A,
5FL2CZ47A,
5DL2CZ47A
5FL2CZ47A
I-2-1360Â
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5tuz52
Abstract: No abstract text available
Text: TOSHIBA 5TUZ52 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 5TUZ52 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV DAMPER-diode • Repetitive Peak Reverse Voltage : V rrm = 1500 V • Average Forward Current : Ip (AV) = 5 A • Reverse-Reeovery Time
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5TUZ52
95MAX.
961001EAA2'
5tuz52
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5VUZ52
Abstract: MARK 1J
Text: TOSHIBA 5VUZ52 TOSHIBA RECTIFIER SILICON DIFFUSED TYPE 5VUZ52 Unit in mm HORIZONTAL DEFLECTION OUTPUT FOR HIGH RESOLUTION DISPLAY, COLOR TV DAMPER-diode . 15.5±0.5 f • Repetitive Peak Reverse Voltage : V rrm = 1700 V • Average Forward Current : Ip (AV) = 5 A
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5VUZ52
95MAX.
961001EAA2'
5VUZ52
MARK 1J
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