TSC5304EDCP
Abstract: TSC5304EDCH marking E11 DIODE power transistor Ic 4A NPN to - 251
Text: TSC5304ED High Voltage NPN Transistor with Diode TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Base 2. Collector 3. Emitter PRODUCT SUMMARY BVCEO 400V BVCBO 700V IC VCE(SAT) Features ● 4A 0.25V (Typ.) @ IC=0.5A, IB=0.1A Block Diagram Build-in Free-wheeling Diode Makes Efficient Antisaturation Operation
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TSC5304ED
O-251
O-252
TSC5304EDCP
TSC5304EDCH
O-252
75pcs
marking E11 DIODE
power transistor Ic 4A NPN to - 251
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H 48 zener diode
Abstract: zener diode 12v 0.5 w 5,6v 1,3w zener diode marking E11 DIODE ZENER DIODE marking l2 BZX85C3V3-BZX85C56 zener diode BZX85C15 DO41 package BZX85C5V1 BZX85C7V5 zener 1.3W
Text: BZX85C3V3-BZX85C56 1.3W,5% Tolerance Zener Diode Small Signal Diode DO-41 Axial Lead HERMETICALLY SEALED GLASS D Features Wide zener voltage range selection:3.3V to 56V C A Vz Tolerance Selection of ±5% Designed for through-Hole Device Type Mounting
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BZX85C3V3-BZX85C56
DO-41
MIL-STD-202
27-Sep-11
H 48 zener diode
zener diode 12v 0.5 w
5,6v 1,3w zener diode
marking E11 DIODE
ZENER DIODE marking l2
BZX85C3V3-BZX85C56
zener diode BZX85C15 DO41 package
BZX85C5V1
BZX85C7V5
zener 1.3W
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S3995
Abstract: SMS3992-00 SMS3994 S3996 SMS1528-00 SMS3991-10 Alpha Industries pin diodes SMS3990 SMS3991-50 MARKING S15
Text: Schottky Mixer and Detector Diodes in EOAlpha Surface Mount Plastic Packages SMS Sériés Features < Æ ° -Æ ^ - For High Volume Commercial Applications Small Surface Mount Packages S0D 323 S O T 23 S 0 T 143 Low Conversion Loss • Tight Parameter Distribution
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marking E11 DIODE
Abstract: No abstract text available
Text: BZX85C3V3-BZX85C56 1.3W,5% Tolerance Zener Diode Small Signal Diode DO-41 Axial Lead HERMETICALLY SEALED GLASS D Features C Wide zener voltage range selection:3.3V to 56V A Vz Tolerance Selection of ±5% Designed for through-Hole Device Type Mounting
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BZX85C3V3-BZX85C56
DO-41
C/10s
27-Sep-11
marking E11 DIODE
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E13 diode
Abstract: SPA548-01
Text: SPA548-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •
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SPA548-01
100kHz
160-1512-XX-05
E13 diode
SPA548-01
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Untitled
Abstract: No abstract text available
Text: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES: • •
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SPA547-01
100kHz
160-1512-XX-05
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marking E13 diode
Abstract: marking E10 DIODE SPA548-01 E5 marking
Text: SPA548-01 Solid State Devices, Inc. 14701 Firestone Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 5.5 kV / 2A Designer’s Data Sheet FEATURES: • • •
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SPA548-01
100kHz
160-1512-XX-05
PM0022B
marking E13 diode
marking E10 DIODE
SPA548-01
E5 marking
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marking E10 DIODE
Abstract: DIODE MARKING 9X SPA547-01 helicoil unf marking E11 DIODE diode marking e8
Text: SPA547-01 Solid State Devices, Inc. 14830 Valley View Blvd * La Mirada, Ca 90638 Phone: 562 404-7855 * Fax: (562) 404-1773 ssdi@ssdi-power.com * www.ssdi-power.com HYPERFAST HIGH VOLTAGE DIODE BRIDGE ASSEMBLY 10.5 kV / 1.5A Designer’s Data Sheet FEATURES:
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SPA547-01
100kHz
160-1512-XX-05
PM0021D
marking E10 DIODE
DIODE MARKING 9X
SPA547-01
helicoil unf
marking E11 DIODE
diode marking e8
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Untitled
Abstract: No abstract text available
Text: TSM2N60 600V N-Channel Power MOSFET TO-220 TO-251 IPAK TO-252 (DPAK) Pin Definition: 1. Gate 2. Drain 3. Source PRODUCT SUMMARY VDS (V) RDS(on)(Ω) ID (A) 600 5 @ VGS =10V 1 General Description The TSM2N60 is used an advanced termination scheme to provide enhanced voltage-blocking capability without
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TSM2N60
O-220
O-251
O-252
TSM2N60
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marking E11 DIODE
Abstract: E11 diode
Text: TSM5ND50 500V N-Channel Power MOSFET TO-251 IPAK TO-252 (DPAK) PRODUCT SUMMARY Pin Definition: 1. Gate 2. Drain 3. Source VDS (V) RDS(on)(Ω) ID (A) 500 1.5 @ VGS =10V 2.2 General Description The TSM5ND50 N-Channel enhancement mode Power MOSFET is produced by planar stripe DMOS
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TSM5ND50
O-251
O-252
TSM5ND50
marking E11 DIODE
E11 diode
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sot-23 MARKING CODE ZA
Abstract: b0808 BCB47B BCB17-16 marking za sot89 2SB0151K marking k5 sot89 SOT 86 MARKING E4 n33 SOT-23 10Y sot-23
Text: SURFACE-MOUNTED DEVICE MARKINGS Because of their smali size, it's not possible to show types/ values on most surface-mounted components. The following tables show the code markings used to identify most common surface-mounted transistors and diodes. Note that the same
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OT-23,
OT-89
OT-143
BZV49
OT-23
2SC2059K
sot-23 MARKING CODE ZA
b0808
BCB47B
BCB17-16
marking za sot89
2SB0151K
marking k5 sot89
SOT 86 MARKING E4
n33 SOT-23
10Y sot-23
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HSMP-389D
Abstract: avago month marking avago marking -20
Text: HSMP-389D PIN Diode Diversity Switch Data Sheet Description Features The HSMP-389D is a low cost and low loss diversity switch designed to operate from 50MHz to 6GHz. HSMP-389D is built with unique 4 PIN diode configuration, and it is housed in a industrial standard low cost miniature
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HSMP-389D
HSMP-389D
50MHz
OT-143
OT-143
900MHz.
35dBm
avago month marking
avago marking -20
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D2502
Abstract: ECSP1006-2 ESGD100
Text: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view
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ENN7320A
ESGD100
ESGD100]
ECSP1006-2
D2502
ECSP1006-2
ESGD100
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN7320A ESGD100 GaAs Schottky Barrier Diode ESGD100 X Band, Mixer, Modulator Applications Features Environmentally-considered chip scale package. Less parasitic components, conversion loss. unit : mm 1321A [ESGD100] Type No. Indication Top view
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ENN7320A
ESGD100
ESGD100]
ECSP1006-2
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Untitled
Abstract: No abstract text available
Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode
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CAS100H12AM1
CAS100H12AM1
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11567 Revision. 4 Product Standards Zener Diode DZ2J3900L DZ2J3900L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz
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TT4-EA-11567
DZ2J390ï
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11540 Revision. 3 Product Standards Zener Diode DZ2J0330L DZ2J0330L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz
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TT4-EA-11540
DZ2J033ï
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11562 Revision. 4 Product Standards Zener Diode DZ2J2400L DZ2J2400L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz
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TT4-EA-11562
DZ2J240ï
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11557 Revision. 3 Product Standards Zener Diode DZ2J1500L DZ2J1500L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz
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TT4-EA-11557
DZ2J150ï
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11792 Revision. 3 Product Standards Zener Diode DZ2S0750L DZ2S0750L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J075 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6 Excellent rising characteristics of zener current Iz
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TT4-EA-11792
DZ2S075ï
DZ2J075
UL-94
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-13615 Revision. 4 Product Standards Zener Diode DZ2S1000L DZ2S1000L Silicon epitaxial planar type Unit: mm For constant voltage / For surge absorption circuit DZ2J100 in SSMini2 type package 0.8 0.13 2 • Features 1.2 1.6 Excellent rising characteristics of zener current Iz
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TT4-EA-13615
DZ2S100ï
DZ2J100
UL-94
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CAS100H12
Abstract: No abstract text available
Text: CAS100H12AM1 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode VDS 1.2 kV RDS on (TJ = 25˚C) Not recommended for new designs. Replacement part: CAS120M12BM2 EOFF (TJ = 125˚C) Features • • • • • • 1.8 mJ Package
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CAS100H12AM1
CAS120M12BM2
CAS100H12AM1
CAS100H12
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CPWR-AN12
Abstract: CAS100H12AM1
Text: CAS100H12AM1 VDS 1.2 kV 1.2 kV, 100A Silicon Carbide Half-Bridge Module Z-FETTM MOSFET and Z-RecTM Diode Features • • • • • • 16 mΩ EOFF TJ = 125˚C 1.8 mJ Package Ultra Low Loss Zero Turn-off Tail Current from MOSFET Zero Reverse Recovery Current from Diode
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CAS100H12AM1
CAS100H12AM1
CPWR-AN12
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Untitled
Abstract: No abstract text available
Text: Doc No. TT4-EA-11555 Revision. 3 Product Standards Zener Diode DZ2J1300L DZ2J1300L Silicon epitaxial planar type Unit: mm 1.25 0.35 For constant voltage / For surge absorption circuit 0.13 2 • Features 1.7 2.5 Excellent rising characteristics of zener current Iz
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TT4-EA-11555
DZ2J130ï
UL-94
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