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    MARKING DN DFN Search Results

    MARKING DN DFN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK170V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 18 A, 0.17 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK125V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 24 A, 0.125 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK210V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.21 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    TK099V65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.099 Ohm@10V, DFN 8 x 8 Visit Toshiba Electronic Devices & Storage Corporation
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy

    MARKING DN DFN Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    C6320

    Abstract: 620 tg diode
    Text: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps


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    TC6320 MS-012, DSFP-TC6320 B051908 C6320 620 tg diode PDF

    C6320

    Abstract: No abstract text available
    Text: TC6320 N- and P-Channel, Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps


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    TC6320 MS-012, DSFP-TC6320 A030608 C6320 PDF

    Untitled

    Abstract: No abstract text available
    Text: DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR ADVANCE INFORMATION Lead-free Green UNDER DEVELOPMENT Features • · · · · · · · · Low On-Resistance Very Low Gate Threshold Voltage Fast Switching Speed DFN1006-3 Low Input/Output Leakage


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    DMN2005LP4K DFN1006-3 DFN1006-3 DS30799 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps


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    TC6320 DSFP-TC6320 C103008 PDF

    c6320

    Abstract: MD12xx TC6320 TC6320K6 p channel mosfet 100v 125OC TC6320TG-G 090M TC6320K6-G DFN 3x4
    Text: TC6320 N- and P-Channel Enhancement-Mode MOSFET Pair Features General Description ► ► ► ► ► ► ► ► ► The Supertex TC6320 consists of high voltage, low threshold N-channel and P-channel MOSFETs in 8-Lead SOIC and DFN packages. Both MOSFETs have integrated gate-tosource resistors and gate-to-source Zener diode clamps


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    TC6320 TC6320 DSFP-TC6320 C122208 c6320 MD12xx TC6320K6 p channel mosfet 100v 125OC TC6320TG-G 090M TC6320K6-G DFN 3x4 PDF

    marking code DN diode

    Abstract: No abstract text available
    Text: DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


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    DMN2005LP4K AEC-Q101 DFN1006H4-3 J-STD-020 MIL-STD-202, DS30799 marking code DN diode PDF

    STTS2002

    Abstract: Part Marking STMicroelectronics TSSOP8 stmicroelectronics traceability M34E02 MO-229 STTS424E02 N3251
    Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kbit Serial Presence Detect SPD EEPROM TDFN8 (DN)(a) 2 mm x 3 mm (max height 0.80 mm)


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    STTS424E02 STTS424E02 STTS2002 Part Marking STMicroelectronics TSSOP8 stmicroelectronics traceability M34E02 MO-229 N3251 PDF

    M34E02

    Abstract: MO-229 STTS424E02
    Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kbit serial presence detect SPD EEPROM TDFN8 (DN)(a) 2 mm x 3 mm (max height 0.80 mm)


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    STTS424E02 STTS424E02 M34E02 MO-229 PDF

    M34E02

    Abstract: MO-229 STTS2002 STTS424E02 tdfn-8l
    Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Not recommended for new design Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kb serial presence detect SPD EEPROM (STTS2002 is


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    STTS424E02 STTS424E02 STTS2002 M34E02 MO-229 tdfn-8l PDF

    Untitled

    Abstract: No abstract text available
    Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Not recommended for new design Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kb serial presence detect SPD EEPROM (STTS2002 is


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    STTS424E02 STTS424E02 STTS2002 PDF

    1E74H

    Abstract: JC42 MO-229 STTS424 tdfn-8l
    Text: STTS424 Memory module temperature sensor Features • Temperature sensor compliant with JEDEC JC42.4 Temperature sensor ■ Temperature sensor resolution: 0.25°C typ /LSB ■ Temperature sensor accuracy: – ± 1°C from +75°C to +95°C – ± 2°C from +40°C to +125°C


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    STTS424 1E74H JC42 MO-229 STTS424 tdfn-8l PDF

    Untitled

    Abstract: No abstract text available
    Text: STTS424 Memory module temperature sensor Features • Temperature sensor compliant with JEDEC JC42.4 Temperature sensor ■ Temperature sensor resolution: 0.25°C typ /LSB ■ Temperature sensor accuracy: – ± 1°C from +75°C to +95°C – ± 2°C from +40°C to +125°C


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    STTS424 PDF

    DFN1006H4-3

    Abstract: DMN2005LP4K marking code DN diode
    Text: SPICE MODEL: DMN2005LP4K DMN2005LP4K NEW NEW PRODUCT N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage


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    DMN2005LP4K DFN1006H4-3 DS30799 DFN1006H4-3 DMN2005LP4K marking code DN diode PDF

    M34E02

    Abstract: No abstract text available
    Text: STTS424E02 Memory module temperature sensor with a 2 Kb SPD EEPROM Not recommended for new design Features • STTS424E02 includes a JEDEC JC 42.4 compatible temperature sensor, integrated with industry standard 2 Kb serial presence detect SPD EEPROM (STTS2002 is


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    STTS424E02 STTS424E02 STTS2002 M34E02 PDF

    DFN1006-3

    Abstract: DMN2005LP4K DFN1006H4-3
    Text: DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • • Mechanical Data • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package


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    DMN2005LP4K AEC-Q101 DFN1006H4-3 J-STD-020C MIL-STD-202, DS30799 DFN1006-3 DMN2005LP4K DFN1006H4-3 PDF

    Untitled

    Abstract: No abstract text available
    Text: STTS424 Memory module temperature sensor Features • Temperature sensor compliant with JEDEC JC42.4 s ct Temperature sensor ■ Temperature sensor resolution: 0.25°C (typ)/LSB ■ Temperature sensor accuracy: – ± 1°C from +75°C to +95°C – ± 2°C from +40°C to +125°C


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    STTS424 PDF

    DFN1006H4-3

    Abstract: DMN2005LP4K J-STD-020D marking CODE 001
    Text: DMN2005LP4K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max.


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    DMN2005LP4K AEC-Q101 DFN1006H4-3 J-STD-020D DS30799 DFN1006H4-3 DMN2005LP4K J-STD-020D marking CODE 001 PDF

    Untitled

    Abstract: No abstract text available
    Text: LT3487 Boost and Inverting Switching Regulator for CCD Bias DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3487 dual channel switching regulator generates positive and negative outputs for biasing CCD imagers. The device delivers up to –8V at 90mA and 15V at 45mA


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    LT3487 LT3471 LT3472/LT3472A 350mA/400mA 3487f PDF

    sumida hp lcd inverter pin diagram

    Abstract: capacitor start capacitor run 1 HP SINGLE PHASE LBXB sumida lcd inverter pin diagram 100nf chip cap A997AS-100M ceramic capacitor, 20pF EMK212BJ225MD ipos 150 g14 DIODE schottky marking
    Text: LT3487 Boost and Inverting Switching Regulator for CCD Bias DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT 3487 dual channel switching regulator generates positive and negative outputs for biasing CCD imagers. The device delivers up to –8V at 90mA and 15V at 45mA


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    LT3487 LT3471 LT3472/LT3472A 350mA/400mA 3487f sumida hp lcd inverter pin diagram capacitor start capacitor run 1 HP SINGLE PHASE LBXB sumida lcd inverter pin diagram 100nf chip cap A997AS-100M ceramic capacitor, 20pF EMK212BJ225MD ipos 150 g14 DIODE schottky marking PDF

    Untitled

    Abstract: No abstract text available
    Text: LT3472 Boost and Inverting DC/DC Converter for CCD Bias DESCRIPTIO FEATURES • ■ ■ ■ ■ ■ ■ ■ U ■ Generates 15V at 20mA, –8V at 50mA from a Li-Ion Cell Internal Schottky Diodes VIN Range: 2.2V to 16V Output Voltages Up to ±34V Capacitor-Programmable Soft-Start


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    LT3472 10-Lead LT3464 LT3467/LT3467A 3472f PDF

    D1067

    Abstract: LT3472EDD F02A LT3462 LT19441 marking FBN LT3472 LT1615-1 LQH2MCN470 lbgc
    Text: LT3472 Boost and Inverting DC/DC Converter for CCD Bias DESCRIPTIO U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ Generates 15V at 20mA, –8V at 50mA from a Li-Ion Cell Internal Schottky Diodes VIN Range: 2.2V to 16V Output Voltages Up to ±34V Capacitor-Programmable Soft-Start


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    LT3472 10-Lead LT3464 LT3467/LT3467A 3472f D1067 LT3472EDD F02A LT3462 LT19441 marking FBN LT3472 LT1615-1 LQH2MCN470 lbgc PDF

    CPC6 coating

    Abstract: corning smf cable EIA-359-A MARKING E0C DFNR
    Text: THIS DRAWING IS UNPUBUSHED. @ RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. DIST REVISIONS EH LTR D 1 \ □PTICAL FIBER SPECIFICATIONS: PART NUMBER FIBER TYPE 503016-1 62. 5 / 1 2 5 503016-2 50/125 503016-3 100/140


    OCR Scan
    850nm 1300nm 1550nm 850nm 1300nn SMF-28 m-160/300 100/14Q/j m-100/lQQ CPC6 coating corning smf cable EIA-359-A MARKING E0C DFNR PDF

    EIA-359-A

    Abstract: EIA-359
    Text: THIS DRAWING IS UNPUBUSHED. @ RELEASED FOR PUBLICATION COPYRIGHT 19 BY AMP INCORPORATED. .19 LOC ALL RIGHTS RESERVED. DIST REVISIONS EH LTR D A H □PTICAL FIBER SPECIFICATIONS! ATTEN UAT I□IsJ PART NUMBER FIBER TYPE D / A t 502987-1 62. 5/125 502987-2 50/125


    OCR Scan
    0A60-0075-97 0A60-0112-99 27SEP96 24SEP97 16AUG99 850nm 1300nri 1550nm 850nm 1300nm EIA-359-A EIA-359 PDF

    GR-409-CDRE

    Abstract: SMD-KE EIA-359 dash
    Text: 4 3 THIS DRAWING IS UNPUBLISHED. RELEASED FOR PUBLICATION COPYRIGHT 19 DPTICAL FIBER SPECIFICATIONS FIBER TYPE 503015-2 50/125 503015-5 62. 5 / 1 2 5 503015-6 SINGLEMDDE S M F -2 8 503015-8 62. 5 / 1 2 5 2. 9 0. 9 n/a MAXIMUM 2. 0 n/a TYPICAL 2. 6 1. 1 n/a


    OCR Scan
    850nm 1300nm 1550nm 850nn SMF-28 5/125/um 50/125/xn 5/125/i GR-409-CDRE SMD-KE EIA-359 dash PDF