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    MARKING DIODE Y4 Search Results

    MARKING DIODE Y4 Result Highlights (5)

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    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    MARKING DIODE Y4 Datasheets Context Search

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    marking A4t sot23

    Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p PDF

    philips diode PH 33D

    Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
    Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817


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    1N821 1N821A 1N823 1N823A 1N825 1N825A 1N827 1N827A 1N829 1N829A philips diode PH 33D PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m PDF

    philips diode PH 33D

    Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 philips diode PH 33D philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE PDF

    marking A4t sot23

    Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
    Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)


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    1N5817 1N821 1N5818 1N821A 1N5819 marking A4t sot23 PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23 PDF

    Y4 ZENER DIODE

    Abstract: zener y4 ksd2054 Y4 diode zener SDZ15VF code y4 y4 marking
    Text: SDZ15VF Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ15VF Marking Package Code Y4 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC


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    SDZ15VF OT-23F KSD-2054-000 Y4 ZENER DIODE zener y4 ksd2054 Y4 diode zener SDZ15VF code y4 y4 marking PDF

    Y4 ZENER DIODE

    Abstract: Y4 sot-23 2019000 y4-sot 23 Y4 diode zener zener y4 SDZ15V marking code y4 ksd2019
    Text: SDZ15V Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ15V Marking Package Code Y4 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1


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    SDZ15V OT-23 KSD-2019-000 Y4 ZENER DIODE Y4 sot-23 2019000 y4-sot 23 Y4 diode zener zener y4 SDZ15V marking code y4 ksd2019 PDF

    diode 12A3

    Abstract: No abstract text available
    Text: MDI100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    MDI100-12A3 60747and 20131206a diode 12A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MID100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    MID100-12A3 60747and 20131206a PDF

    Untitled

    Abstract: No abstract text available
    Text: MID75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    MID75-12A3 60747and 20131206a PDF

    Untitled

    Abstract: No abstract text available
    Text: MDI75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI75-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    MDI75-12A3 60747and 20131206a PDF

    diode 12A3

    Abstract: No abstract text available
    Text: MID145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID145-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    MID145-12A3 60747and 20131206a diode 12A3 PDF

    diode 12A3

    Abstract: No abstract text available
    Text: MDI145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI145-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage


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    MDI145-12A3 60747and 20131206a diode 12A3 PDF

    MII100

    Abstract: No abstract text available
    Text: MII100-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


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    MII100-12A3 60747and 20131206a MII100 PDF

    MII75-12A3

    Abstract: No abstract text available
    Text: MII75-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 90 A VCE(sat) = 2.2 V Phase leg Part number MII75-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses


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    MII75-12A3 60747and 20131206a MII75-12A3 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCD132-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCD132-18io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    MCD132-18io1 60747and 20131121a PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC132-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCC132-08io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    MCC132-08io1 60747and 20131121a PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC162-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-08io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    MCC162-08io1 cycling080 60747and 20131121a PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC132-14io1 Thyristor Module VRRM = 2x 1400 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCC132-14io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    MCC132-14io1 60747and 20131121a PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC162-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-18io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    MCC162-18io1 cyclin080 60747and 20131121a PDF

    Untitled

    Abstract: No abstract text available
    Text: MCD162-12io1 Thyristor Module VRRM = 2x 1200 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-12io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    MCD162-12io1 60747and 20131121a PDF

    Untitled

    Abstract: No abstract text available
    Text: MCD162-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-18io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    MCD162-18io1 60747and 20131121a PDF

    MCD162-08IO1

    Abstract: No abstract text available
    Text: MCD162-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-08io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    MCD162-08io1 60747and 20131121a MCD162-08IO1 PDF

    Untitled

    Abstract: No abstract text available
    Text: MCC162-16io1 Thyristor Module VRRM = 2x 1600 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-16io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability


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    MCC162-16io1 cyclin080 60747and 20131121a PDF

    DIODE S3V 63

    Abstract: No abstract text available
    Text: Axial Diode Single Diode Avalanche type • O U T L IN E D IM E N S IO N S D ‘ Cathode (D • Anode S3VDZ 7.5MAX 24MIN 600V 3.5A 24MIN II JLi o-— M Marking S3V □D _ Type No. (S4.8MAX -■0 x-inwH JiM i! ■ +1 63 / C olor code, Cathode band


    OCR Scan
    24MIN S3V60Z DIODE S3V 63 PDF