marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Y4 ZENER DIODE
Abstract: zener y4 ksd2054 Y4 diode zener SDZ15VF code y4 y4 marking
Text: SDZ15VF Semiconductor Zener Diode Features • Compact type • Radiation size 1.6mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ15VF Marking Package Code Y4 SOT-23F Outline Dimensions unit : mm 2.4±0.1 1.6±0.1 1.90 BSC
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SDZ15VF
OT-23F
KSD-2054-000
Y4 ZENER DIODE
zener y4
ksd2054
Y4 diode zener
SDZ15VF
code y4
y4 marking
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Y4 ZENER DIODE
Abstract: Y4 sot-23 2019000 y4-sot 23 Y4 diode zener zener y4 SDZ15V marking code y4 ksd2019
Text: SDZ15V Semiconductor Zener Diode Features • Compact type • Radiation size 1.3mm x 2.9mm • Surface mount lead configuration Ordering Information Type NO. SDZ15V Marking Package Code Y4 SOT-23 Outline Dimensions unit : mm 2.4±0.1 1.30±0.1 3 2.9±0.1
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SDZ15V
OT-23
KSD-2019-000
Y4 ZENER DIODE
Y4 sot-23
2019000
y4-sot 23
Y4 diode zener
zener y4
SDZ15V
marking code y4
ksd2019
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diode 12A3
Abstract: No abstract text available
Text: MDI100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI100-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MDI100-12A3
60747and
20131206a
diode 12A3
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Untitled
Abstract: No abstract text available
Text: MID100-12A3 IGBT NPT Module VCES = 1200 V I C25 = 135 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID100-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MID100-12A3
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20131206a
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Untitled
Abstract: No abstract text available
Text: MID75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID75-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MID75-12A3
60747and
20131206a
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Untitled
Abstract: No abstract text available
Text: MDI75-12A3 IGBT NPT Module VCES = 1200 V I C25 = 90 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI75-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MDI75-12A3
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20131206a
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diode 12A3
Abstract: No abstract text available
Text: MID145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Boost Chopper + free wheeling Diode Part number MID145-12A3 Backside: isolated 1 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MID145-12A3
60747and
20131206a
diode 12A3
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diode 12A3
Abstract: No abstract text available
Text: MDI145-12A3 IGBT NPT Module VCES = 1200 V I C25 = 160 A VCE(sat) = 2.2 V Buck Chopper + free wheeling Diode Part number MDI145-12A3 Backside: isolated 1 7 6 3 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage
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MDI145-12A3
60747and
20131206a
diode 12A3
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MII100
Abstract: No abstract text available
Text: MII100-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 135 A VCE(sat) = 2.2 V Phase leg Part number MII100-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses
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MII100-12A3
60747and
20131206a
MII100
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MII75-12A3
Abstract: No abstract text available
Text: MII75-12A3 IGBT NPT Module VCES = 2x 1200 V I C25 = 90 A VCE(sat) = 2.2 V Phase leg Part number MII75-12A3 Backside: isolated 1 7 6 3 4 5 2 Features / Advantages: Applications: Package: Y4 ● NPT IGBT technology ● low saturation voltage ● low switching losses
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MII75-12A3
60747and
20131206a
MII75-12A3
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Untitled
Abstract: No abstract text available
Text: MCD132-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCD132-18io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCD132-18io1
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20131121a
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Untitled
Abstract: No abstract text available
Text: MCC132-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCC132-08io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCC132-08io1
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Untitled
Abstract: No abstract text available
Text: MCC162-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-08io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCC162-08io1
cycling080
60747and
20131121a
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Untitled
Abstract: No abstract text available
Text: MCC132-14io1 Thyristor Module VRRM = 2x 1400 V I TAV = 130 A VT = 1.08 V Phase leg Part number MCC132-14io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCC132-14io1
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20131121a
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Untitled
Abstract: No abstract text available
Text: MCC162-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-18io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCC162-18io1
cyclin080
60747and
20131121a
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PDF
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Untitled
Abstract: No abstract text available
Text: MCD162-12io1 Thyristor Module VRRM = 2x 1200 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-12io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCD162-12io1
60747and
20131121a
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PDF
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Untitled
Abstract: No abstract text available
Text: MCD162-18io1 Thyristor Module VRRM = 2x 1800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-18io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCD162-18io1
60747and
20131121a
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MCD162-08IO1
Abstract: No abstract text available
Text: MCD162-08io1 Thyristor Module VRRM = 2x 800 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCD162-08io1 Backside: isolated 3 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCD162-08io1
60747and
20131121a
MCD162-08IO1
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Untitled
Abstract: No abstract text available
Text: MCC162-16io1 Thyristor Module VRRM = 2x 1600 V I TAV = 181 A VT = 1.03 V Phase leg Part number MCC162-16io1 Backside: isolated 3 6 7 1 5 4 2 Features / Advantages: Applications: Package: Y4 ● Thyristor for line frequency ● Planar passivated chip ● Long-term stability
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MCC162-16io1
cyclin080
60747and
20131121a
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DIODE S3V 63
Abstract: No abstract text available
Text: Axial Diode Single Diode Avalanche type • O U T L IN E D IM E N S IO N S D ‘ Cathode (D • Anode S3VDZ 7.5MAX 24MIN 600V 3.5A 24MIN II JLi o-— M Marking S3V □D _ Type No. (S4.8MAX -■0 x-inwH JiM i! ■ +1 63 / C olor code, Cathode band
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OCR Scan
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24MIN
S3V60Z
DIODE S3V 63
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