marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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MARKING ta y sod-323
Abstract: 1N914BWS 1N4148WS
Text: PRE LIM INAR Y DATA SH EET 200mW SOD-323 SURFACE MOUNT DEVICE MARKING CODE: Device Type Device Marking 1N4148WS S1 1N4448WS S2 1N914BWS S3 Small Outline Flat Lead Plastic Package Fast Switching Diode Absolute Maximum Ratings Symbol PD TSTG TA = 25°C unless otherwise noted
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200mW
OD-323
1N4148WS
1N4448WS
1N914BWS
1N4448WS,
TC1N4448WS,
MARKING ta y sod-323
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marking sb diode
Abstract: 0615 s2hbb diode B 4A diode schottky 5 A SMB case
Text: DSB 2 I 60 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 2 I 60 SB (S2HBB) 60 V 2A 0.52 V Features / Advantages: Applications: Package: ● Very low Vf
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DO-214AA)
marking sb diode
0615
s2hbb
diode B 4A
diode schottky 5 A SMB case
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marking sb diode
Abstract: diode schottky 5 A SMB case 0615 S2FB 40V2A
Text: DSB 2 I 40 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSB 2 I 40 SB (S2FBB) 40 V 2A 0.42 V Features / Advantages: Applications: Package: ● Very low Vf
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DO-214AA)
marking sb diode
diode schottky 5 A SMB case
0615
S2FB
40V2A
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marking sb diode
Abstract: diode avalanche DSA diode schottky 5 A SMB case
Text: DSA 2 I 100 SB advanced V RRM = I FAV = VF = Schottky High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number Marking on product DSA 2 I 100 SB (S2KAB) 100 V 2A 0.65 V Features / Advantages: Applications: Package: ● Very low Vf
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DO-214AA)
marking sb diode
diode avalanche DSA
diode schottky 5 A SMB case
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VSO05561
Abstract: No abstract text available
Text: BBY 52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY 52-05W S2s Pin Configuration 1=A1 2=A2
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2-05W
VSO05561
EHA07179
OT-323
May-20-1999
VSO05561
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VSO05561
Abstract: BBY52-05W
Text: BBY52-05W Silicon Tuning Diode 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO's in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking BBY52-05W S2s Pin Configuration 1=A1 2=A2 Package
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BBY52-05W
VSO05561
EHA07179
OT323
Jul-02-2001
VSO05561
BBY52-05W
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SCHOTTKY DIODES SOD-323 FEATURES MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-323
SD101AWS-SD101CWS
OD-323
SD101AWS:
SD101BWS:
SD101CWS:
SD101AW
SD101BW
SD101CW
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S3 marking DIODE
Abstract: SD101AWS SD101BWS SD101CWS sod323 schottky
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD101AWS-SD101CWS SOD-323 SCHOTTKY DIODES + FEATURES - MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
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OD-323
SD101AWS-SD101CWS
OD-323
SD101AWS:
SD101BWS:
SD101CWS:
SD101AWS
SD101BWS
SD101CWS
S3 marking DIODE
SD101AWS
SD101BWS
SD101CWS
sod323 schottky
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S3 marking DIODE
Abstract: SD101AW SD101BW SD101CW
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-123 Plastic-Encapsulate Diodes SD101AW-SD101CW SCHOTTKY DIODES SOD-123 FEATURES MARKING: SD101AW: S1 SD101BW: S2 SD101CW: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter
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OD-123
SD101AW-SD101CW
OD-123
SD101AW:
SD101BW:
SD101CW:
SD101AW
SD101BW
SD101CW
S3 marking DIODE
SD101AW
SD101BW
SD101CW
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S3 marking DIODE
Abstract: SD101AWS SD101BW SD101BWS SD101CWS
Text: SD101AWS-SD101CWS SD101AWS-SD101CWS SOD-323 SCHOTTKY DIODES FEATURES MARKING: SD101AWS: S1 SD101BWS: S2 SD101CWS: S3 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Peak Repetitive Peak reverse voltage Working Peak DC Blocking
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SD101AWS-SD101CWS
OD-323
SD101AWS:
SD101BWS:
SD101CWS:
SD101AWS
SD101BW
SD101CWS
S3 marking DIODE
SD101AWS
SD101BW
SD101BWS
SD101CWS
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E72873
Abstract: VUB116-16NOXT
Text: VUB 116-16NOXT Three Phase Rectiier Bridge Rectiier Diode with IGBT and Fast Recovery Diode for Braking System Fast Recov. Diode IGBT VRRM = 1600 V VCES = 1200 V VCES = 1200 V IdAVM = 116 A VF = 2.75 V IC80 = 84 A IFSM = 700 A IFSM = 200 A VCEsat = 2.1 V Part name Marking on product
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116-16NOXT
VUB116-16NOXT
E72873
20110907b
E72873
VUB116-16NOXT
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DIODE T4 A1
Abstract: diode marking T4
Text: BBY 52-05W Silicon Tuning Diode Preliminary data 3 • High Q hyperabrupt tuning diode • Designed for low tuning voltage operation for VCO’s in mobile communications equipment 2 1 VSO05561 C1/C2 3 1 2 A1 A2 EHA07179 Type Marking Ordering Code Pin Configuration
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2-05W
VSO05561
EHA07179
OT-323
DIODE T4 A1
diode marking T4
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Untitled
Abstract: No abstract text available
Text: – SDB310Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking Package Code SDB310Q S2 SOD-523 unit : mm 1.50~1.70 1.10~1.30 0.70~0.90 0.32 Max. Outline Dimensions
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SDB310Q
OD-523
KSD-D6D004-000
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SWITCHING DIODES SOD-323 FEATURES MARKING: S21 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symb Parameter ol Limits Unit Non-Repetitive Peak reverse voltage
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OD-323
SD106WS
OD-323
100uA
100mA
200mA
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SWITCHING DIODES SOD-323 + FEATURES - MARKING: S21 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symb Parameter ol Limits Unit Non-Repetitive Peak reverse voltage
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OD-323
SD106WS
OD-323
100uA
100mA
200mA
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Untitled
Abstract: No abstract text available
Text: SDB310Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310Q S2 Package Code SOD-523 Outline Dimensions unit : mm 0.70~0.90 0.32 Max. 1.50~1.70 1.10~1.30
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SDB310Q
OD-523
KSD-E002-001
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOD-323 Plastic-Encapsulate Diodes SD106WS FAST SWITCHING DIODES SOD-323 FEATURES MARKING: S21 Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Symb Parameter ol Limits Unit Non-Repetitive Peak reverse voltage
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OD-323
SD106WS
OD-323
100uA
100mA
200mA
1SS355
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SDB310Q
Abstract: package CODE S2 KSD-E002-001
Text: SDB310Q Semiconductor Schottky Barrier Diode Features • Low power rectified • Silicon epitaxial type • High reliability Ordering Information Type No. Marking SDB310Q S2 Package Code SOD-523 Outline Dimensions unit : mm 1.2±0.1 2 1 0~0.1 2 0.6±0.1 0.8±0.1
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SDB310Q
OD-523
KSD-E002-001
SDB310Q
package CODE S2
KSD-E002-001
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Untitled
Abstract: No abstract text available
Text: SIEMENS Silicon Switching Diode Array BAV 70 • For high-speed switching • Common cathode Type Marking Ordering Code tape and reel B A V 70 A4s Q68000-A6622 Pin Configuration Package1) 3 ° SOT-23 Ol Î - K 1 EHA07004 Maximum Ratings per Diode Valúes
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OCR Scan
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PDF
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Q68000-A6622
OT-23
EHA07004
OMOM23
S235bOS
23SLDS
G12D3T3
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S2L20U
Abstract: No abstract text available
Text: Super Fast Recovery Diode Axial Diode OUTLINE Package : AX10 S2L20U Unit : mm W eight 0.65g Typ> 2 0 0 V 1.5A Feature 26.5 • Low Noise • tnr=35ns • s v -r x • trr=35ns (.1 • 7 5 'T /n - J b •iS te .F A (R 4 - 2 - * «•ríüíiidíiiiiM Marking
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OCR Scan
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PDF
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S2L20U
CJ533-1
S2L20U
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