marking A4t sot23
Abstract: A1t SOT23 3Ft SOT23 PH C5V1 transistor t04 sot23 A4T SOT23 transistor marking codes A4p sot23 marking A1T A6t SOT23 marking z2p
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes 1999 Jun 11 Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
A1t SOT23
3Ft SOT23
PH C5V1
transistor t04 sot23
A4T SOT23
transistor marking codes A4p
sot23 marking A1T
A6t SOT23
marking z2p
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philips diode PH 33D
Abstract: PH C5V1 philips diode PH 33m philips diode PH 33J PH 33D PH33D ph33g 33G PH DIODE PH 33G philips diode PH 37m
Text: DISCRETE SEMICONDUCTORS Marking codes Small Signal Transistors and Diodes Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817
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1N821
1N821A
1N823
1N823A
1N825
1N825A
1N827
1N827A
1N829
1N829A
philips diode PH 33D
PH C5V1
philips diode PH 33m
philips diode PH 33J
PH 33D
PH33D
ph33g
33G PH DIODE
PH 33G
philips diode PH 37m
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philips diode PH 33D
Abstract: philips diode PH 33J philips diode PH 33m DIODE C18 ph 33G PH DIODE C18 ph A6t SOT23 C33PH PH 33G T2D DIODE
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
philips diode PH 33D
philips diode PH 33J
philips diode PH 33m
DIODE C18 ph
33G PH DIODE
C18 ph
A6t SOT23
C33PH
PH 33G
T2D DIODE
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marking A4t sot23
Abstract: PH C5V1 T2D 79 diode C18 ph diode T2D DIODE transistor marking codes A4p 3Ft SOT23 A1t SOT23 A4T SOT23 transistor t04 sot23
Text: Philips Semiconductors Small Signal Transistors and Diodes DIODE TYPE NUMBER TO MARKING CODE TYPE NUMBER MARKING CODE Marking codes TYPE NUMBER PACKAGE MARKING CODE PACKAGE 1N5817 1N5817 SOD81 1N821 1N821 SOD68 DO34 1N5818 1N5818 SOD81 1N821A 1N821A SOD68 (DO34)
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1N5817
1N821
1N5818
1N821A
1N5819
marking A4t sot23
PH C5V1
T2D 79 diode
C18 ph diode
T2D DIODE
transistor marking codes A4p
3Ft SOT23
A1t SOT23
A4T SOT23
transistor t04 sot23
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Untitled
Abstract: No abstract text available
Text: DSS6-0025BS preliminary Schottky Diode VRRM = 25 V I FAV = 6A VF = 0.3 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0025BS Marking on Product: 6Y025AS Backside: cathode 1 3 4 Features / Advantages: Applications:
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DSS6-0025BS
6Y025AS
O-252
60747and
20131031b
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6Y150AS
Abstract: 6Y150AS IXYS
Text: DSS6-015AS Schottky Diode VRRM = 150 V I FAV = 6A VF = 0.62 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-015AS Marking on Product: 6Y150AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak
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DSS6-015AS
6Y150AS
O-252
60747and
20131031b
6Y150AS
6Y150AS IXYS
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Untitled
Abstract: No abstract text available
Text: DSS6-0045AS Schottky Diode VRRM = 45 V I FAV = 6A VF = 0.5 V High Performance Schottky Diode Low Loss and Soft Recovery Single Diode Part number DSS6-0045AS Marking on Product: 6Y045AS Backside: cathode 1 3 4 Features / Advantages: Applications: Package: TO-252 DPak
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DSS6-0045AS
6Y045AS
O-252
60747and
20131031b
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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DIODE MARKING CODE B3
Abstract: DIODE MARKING B4 marking B4 diode l4 marking code diode DSEP6-06BS diode B4 252 diode marking b2
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number DSEP6-06BS 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Applications:
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DSEP6-06BS
Recti10
60747and
20110915a
DIODE MARKING CODE B3
DIODE MARKING B4
marking B4 diode
l4 marking code diode
DSEP6-06BS
diode B4 252
diode marking b2
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Untitled
Abstract: No abstract text available
Text: DSEP6-06BS preliminary V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 15 ns Part number 3 1 Marking on Product: P6QGUI Backside: cathode Features / Advantages: Package: Applications: Planar passivated chips
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DSEP6-06BS
60747and
20110915a
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6P060AS
Abstract: marking diode 6a
Text: DSEP6-06AS HiPerFRED VRRM = 600 V I FAV = 6A t rr = 20 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DSEP6-06AS Marking on Product: 6P060AS Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-252 DPak
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DSEP6-06AS
6P060AS
60747and
20110915a
6P060AS
marking diode 6a
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6P060AS
Abstract: No abstract text available
Text: DSEP6-06AS V RRM = I FAV = t rr = HiPerFRED High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode 600 V 6A 20 ns Part number DSEP6-06AS 3 1 Marking on Product: 6P060AS Backside: cathode Features / Advantages: Applications: Package: ● Planar passivated chips
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DSEP6-06AS
6P060AS
6-06AS
60747and
20110915a
6P060AS
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Untitled
Abstract: No abstract text available
Text: 976nm Butterfly Packaged Diode Laser K98S14F-3.00W Key Features： 3W output power 105µm fiber core diameter 0.22NA 976nm wavelength Applications： Laser pumping Medical use Printing Heating Material processing Marking BWT Beijing’s High Power Diode Laser Modules are manufactured by
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976nm
K98S14F-3
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BAS16
Abstract: bas16 a6 BAS16/S/U/W BAS16-03W a6s marking A6s sot23 BAS16 SOT23 BAS16 transistor BAS1602W a6 bas16
Text: BAS16. Silicon Switching Diode • For high-speed switching applications BAS16 BAS16W BAS16-02L BAS16-02V BAS16-02W BAS16-03W BAS16S BAS16U $ ! " # , BAS16-07L4 " , , ! ! , ! , Type Package Configuration Marking BAS16 BAS16S BAS16U BAS16W BAS16-02L*
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BAS16.
BAS16
BAS16W
BAS16-02L
BAS16-02V
BAS16-02W
BAS16-03W
BAS16S
BAS16U
BAS16-07L4
BAS16
bas16 a6
BAS16/S/U/W
BAS16-03W
a6s marking
A6s sot23
BAS16 SOT23
BAS16 transistor
BAS1602W
a6 bas16
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Untitled
Abstract: No abstract text available
Text: 785nm Fiber-Coupled Diode Laser K78S06F-1.60W Key Features： 1.6W output power 105µm or 200µm fiber core diameter 0.22NA 785nm wavelength Applications： Laser pumping Medical use Printing Heating Material processing Marking
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785nm
K78S06F-1
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CV marking code diode transient
Abstract: ERA82-004 a316 j
Text: ERA82-004 o.6A i Outline Drawings SCHOTTKY BARRIER DIODE I Features • 1&VF I S t]\ : Marking Low VF *3 7 Super high speed sw itchin g. • - a —K : C3 Color code •W h ite fI*H4 tEflE? 5 * Voltage class High reliability by planer design. • ffi'J ' & O f t
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OCR Scan
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ERA82-004
CV marking code diode transient
a316 j
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Untitled
Abstract: No abstract text available
Text: n ix Y S Advanced Technical Data Fast Recovery Epitaxial Diode FRED DSEI6 I vr RRM t v RSM V V RRM V Type 640 600 DSEI 6-06AS 6A 600 V 35 ns FAVM rr TO-252AA marking on product Anode Symbol 6I060AS Test Conditions ^FRM TVJ Tc = 125°C; rectangular, d = 0.5
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6I060AS
O-252AA
6-06AS
-252AA
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c81-004
Abstract: c81 004 Diode C81 004 C81004 ERC81 ERC81-004 T151 T460 T810 T930
Text: ERC81 -004 2 •6A M f l H ü : Outline Drawings sj~— K SCHOTTKY BARRIER DIODE : Features •te v F IR tf : Marking Low VF * 7 - 3 - K :#l Color code : Silver Super high speed switching. High reliability by planer design Abridged type name Voltage class
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OCR Scan
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ERC81-004
e18-ts
95t/R89
Shl50
c81-004
c81 004
Diode C81 004
C81004
ERC81
T151
T460
T810
T930
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14538
Abstract: No abstract text available
Text: Doc No. TT4-EA-14538 Revision. 2 Product Standards MOS FET SK8603300L SK8603300L Silicon N-channel MOSFET with Schottky Barrier Diode Unit : mm 5.1 4.9 For Load-switching / For DC-DC Converter 0.22 8 7 6 5 1 2 3 4 • Features Marking Symbol : 30 5.9 6.15
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TT4-EA-14538
SK8603300L
UL-94
14538
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Untitled
Abstract: No abstract text available
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ¬
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6-06AS
O-252AA
6P060AS
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PDF
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6P060AS
Abstract: 6p060
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery Preliminary Data VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
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6-06AS
O-252AA
6P060AS
6P060AS
6p060
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6P060AS
Abstract: No abstract text available
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V trr = 20 ns with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Anode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
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6-06AS
O-252AA
6P060AS
6P060AS
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PDF
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6P060AS
Abstract: 6-06AS
Text: DSEP 6-06AS HiPerFREDTM Epitaxial Diode IFAVM = 6 A VRRM = 600 V = 20 ns trr with soft recovery VRSM V VRRM V Type Marking on product 600 600 DSEP 6-06AS C A TO-252AA DPAK Cathode 6P060AS Cathode (Flange) Anode Symbol Conditions IFRMS IFAVM ① IFRM TVJ = TVJM
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6-06AS
O-252AA
6P060AS
6P060AS
6-06AS
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ERA82-004
Abstract: P151 T151 T810 T930 a316
Text: ERA 82-004 o.6A M J f : Outline Drawings SC H O TTK Y BARRIER DIODE Features • te V F Low V f ISït f : Marking *•7- o—K : t-i Color code •White Super high speed switching. • n m - ¿ ¿ a ti« H 4 High reliability by planer design. ¥ 1 D y f-Na
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OCR Scan
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ERA82-004
l95t/R89
P151
T151
T810
T930
a316
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