Untitled
Abstract: No abstract text available
Text: KU SMD TS SKUS ERI ES OUTLI NEDI MENSI ONS KU5S31NS Package M2F Marking（ｏld） Type No. K05S 3100 310V50A 品名略号 Type No. Date code 5S31 00 00 管理番号 （例） Feat ur e ① ② ② ロット記号 （例） Control No. Bi di r ect i onal Hi
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K10S
Abstract: No abstract text available
Text: KU SMD TS SKUS ERI ES OUTLI NEDI MENSI ONS KU10S35NS Package M2F Marking（ｏld） Type No. K10S 3500 350V100A 品名略号 Type No. Date code 10S35 00 00 ② 管理番号（例） Control No. Feat ur e Bi di r ect i onal Hi ghSpeedRes pons e Lar ges ur gecur
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10S35
K10S
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Untitled
Abstract: No abstract text available
Text: IC MOSFET SMD Type Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor SI8822 TSSOP-8 • Features Unit: mm ● VDS V = 20V ● ID = 7A (VGS=10V) ● RDS(ON) ＜ 21mΩ (VGS = 10V) ● RDS(ON) ＜ 24mΩ (VGS = 4.5V) ● RDS(ON) ＜ 32mΩ (VGS = 2.5V)
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SI8822
30VGS
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marking DI SMD
Abstract: No abstract text available
Text: IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature
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IDB06E60
P-TO220-3
IDB06E60
D06E60
Q67040-S4481
marking DI SMD
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10ETF
Abstract: 10ETF02S 10ETF04S 10ETF06S AN-994 SMD-220
Text: 10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES/DESCRIPTION Base common cathode + 2 D2PAK SMD-220 1 Anode - The 10ETF.SPbF fast soft recovery rectifier series has been optimized for combined short
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10ETF.
SMD-220)
2002/95/EC.
18-Jul-08
10ETF
10ETF02S
10ETF04S
10ETF06S
AN-994
SMD-220
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A7 SMD TRANSISTOR
Abstract: SMD a7 Transistor smd transistor marking a7 smd TRANSISTOR sot-23 a7 smd transistor A7 KO3407 smd transistor A7 s 52 smd a7 smd transistor A7 sot 23 smd diode a7
Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3407 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS ON 87m 1 (VGS = -10V) 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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KO3407
OT-23
A7 SMD TRANSISTOR
SMD a7 Transistor
smd transistor marking a7
smd TRANSISTOR sot-23 a7
smd transistor A7
KO3407
smd transistor A7 s 52
smd a7
smd transistor A7 sot 23
smd diode a7
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smd transistor A1
Abstract: DIODE smd marking A1 smd transistor 2a 43 KO3401 smd transistor marking A1 SMD TRANSISTOR MARKING 94 SMD TRANSISTOR A1 SOT23 smd diode A1 smd transistor A1 sot-23 marking A1 TRANSISTOR
Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3401 SOT-23 Features Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 VDS V = -30V 0.4 3 (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 120m 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -2.5V) +0.05 0.1-0.01
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KO3401
OT-23
smd transistor A1
DIODE smd marking A1
smd transistor 2a 43
KO3401
smd transistor marking A1
SMD TRANSISTOR MARKING 94
SMD TRANSISTOR A1 SOT23
smd diode A1
smd transistor A1 sot-23
marking A1 TRANSISTOR
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smd marking 58a
Abstract: smd transistor a4 a4 smd transistor smd transistor marking A4 KO3404 SMD TRANSISTOR A4 S DIODE smd marking A4 smd diode A4 marking on IC SMD TRANSISTOR MARKING 28 DIODE EJL
Text: Transistors IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3404 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 28 m VGS = 10V RDS(ON) 43 m (VGS = 4.5V) 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.05 0.1-0.01 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1
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KO3404
OT-23
smd marking 58a
smd transistor a4
a4 smd transistor
smd transistor marking A4
KO3404
SMD TRANSISTOR A4 S
DIODE smd marking A4
smd diode A4 marking on IC
SMD TRANSISTOR MARKING 28
DIODE EJL
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Untitled
Abstract: No abstract text available
Text: Transistors IC SMD Type P-Channel Enhancement Mode Field Effect Transistor KO3403 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 VDS V = -30V 0.4 3 Features 1 RDS(ON) 180 m (VGS = -4.5V) RDS(ON) 260m (VGS = -2.5V) 2 +0.1 0.95-0.1 +0.1
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KO3403
OT-23
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10ETF
Abstract: 10ETF02S 10ETF04S 10ETF06S AN-994 SMD-220
Text: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base common cathode + 2 D2PAK SMD-220 1 Anode - • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC
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VS-10ETF.
SMD-220)
J-STD-020,
2002/95/EC
18-Jul-08
10ETF
10ETF02S
10ETF04S
10ETF06S
AN-994
SMD-220
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D06E60
Abstract: IDB06E60 Q67040-S4481 marking diode 6a diode 400V 6A IDP06E60 Q67040-S4480 400v 3a low vf diode smd code 6a marking DI SMD
Text: IDP06E60 IDB06E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 6 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
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IDP06E60
IDB06E60
P-TO220-3
P-TO220-2-2.
Q67040-S4480
D06E60
D06E60
IDB06E60
Q67040-S4481
marking diode 6a
diode 400V 6A
IDP06E60
Q67040-S4480
400v 3a low vf diode
smd code 6a
marking DI SMD
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Untitled
Abstract: No abstract text available
Text: IDB09E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 9 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling
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IDB09E120
P-TO220-3
IDB09E120
D09E120
Q67040-S4384
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Untitled
Abstract: No abstract text available
Text: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base common cathode + 2 D2PAK SMD-220 1 Anode - • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC
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VS-10ETF.
J-STD-020,
2002/95/EC
SMD-220)
11-Mar-11
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Untitled
Abstract: No abstract text available
Text: IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage • 175°C operating temperature
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IDB09E60
P-TO220-3
IDB09E60
D09E60
Q67040-S4482
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D06E60
Abstract: diode 400V 6A IDB06E60 Q67040-S4481 IDP06E60 Q67040-S4480 marking diode 6a
Text: IDP06E60 IDB06E60 Preliminary data Fast Switching EmConDiode Product Summary Feature 600 V IF 6 A VF 1.45 V Tjmax 175 °C VRRM 600 V EmCon technology Fast recovery Soft switching Low reverse recovery charge P-TO220-3.SMD Low forward voltage P-TO220-2-2.
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IDP06E60
IDB06E60
P-TO220-3
P-TO220-2-2.
Q67040-S4480
D06E60
D06E60
diode 400V 6A
IDB06E60
Q67040-S4481
IDP06E60
Q67040-S4480
marking diode 6a
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smd code marking 4A
Abstract: D04E120 IDB04E120 IDP04E120 Q67040-S4388
Text: IDP04E120 IDB04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
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IDP04E120
IDB04E120
P-TO220-3
P-TO220-2-2.
Q67040-S4388
D04E120
smd code marking 4A
D04E120
IDB04E120
IDP04E120
Q67040-S4388
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D09E60
Abstract: Q67040-S4482 IDB09E60 IDP09E60 Q67040-S4483
Text: IDP09E60 IDB09E60 Fast Switching EmCon Diode Product Summary Feature VRRM • 600 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 600 V IF 9 A VF 1.5 V T jmax 175 °C P-TO220-3.SMD • Low forward voltage P-TO220-2-2.
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IDP09E60
IDB09E60
P-TO220-3
P-TO220-2-2.
Q67040-S4483
D09E60
D09E60
Q67040-S4482
IDB09E60
IDP09E60
Q67040-S4483
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smd code marking 4A
Abstract: No abstract text available
Text: IDP04E120 IDB04E120 Fast Switching EmCon Diode Product Summary Feature VRRM • 1200 V EmCon technology • Fast recovery • Soft switching • Low reverse recovery charge 1200 V IF 4 A VF 1.65 V T jmax 150 °C P-TO220-3.SMD • Low forward voltage • Easy paralleling
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IDP04E120
IDB04E120
P-TO220-3
P-TO220-2-2.
IDB04E120
Q67040-S4388
D04E120
D04E120
smd code marking 4A
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A18E smd
Abstract: A18E
Text: MOSFET IC SMD Type P-Channel Enhancement Mode Power MOSFET AO3401 SOT-23-3 Unit: mm • Features +0.2 2.9-0.2 +0.1 0.4-0.05 ● VDS V = -30V (VGS = -10V) RDS(ON) 65m (VGS = -4.5V) 1 ● RDS(ON) ＜ 120mΩ (VGS = -2.5V) 0.55 50m +0.2 1.6 -0.1 RDS(ON) +0.2
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OT-23-3
A18E smd
A18E
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A08K
Abstract: a08k transistor SMD TRANSISTOR mosfet marking pd
Text: MOSFET IC SMD Type N-Channel Enhancement Mode Field Effect Transistor KO3416 SOT-23-3 Unit: mm +0.2 2.9-0.2 +0.1 0.4-0.05 • Features 1 ● RDS ON ＜ 26mΩ (VGS = 2.5V) 0.55 ● RDS(ON) ＜ 22mΩ (VGS = 4.5V) +0.2 1.6 -0.1 +0.2 2.8-0.2 ● ID = 6.5 A 0.4
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KO3416
OT-23-3
A08K
a08k transistor
SMD TRANSISTOR mosfet marking pd
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Untitled
Abstract: No abstract text available
Text: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base common cathode + 2 D2PAK SMD-220 1 Anode - • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC
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VS-10ETF.
J-STD-020,
2002/95/EC
SMD-220)
11-Mar-11
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IFM VS 0100
Abstract: smd diode B3
Text: VS-10ETF.SPbF Soft Recovery Series Vishay High Power Products Fast Soft Recovery Rectifier Diode, 10 A FEATURES Base common cathode + 2 D2PAK SMD-220 1 Anode - • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Compliant to RoHS directive 2002/95/EC
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VS-10ETF.
J-STD-020,
2002/95/EC
SMD-220)
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IFM VS 0100
smd diode B3
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Untitled
Abstract: No abstract text available
Text: MOSFET IC SMD Type P-Channel 20V DS MOSFET UI2321DS K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 0.4 3 RDS(ON) < 50m RDS(ON) < 65m 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 (VGS = -4.5V) +0.05 0.1-0.01 (VGS = -2.5V) +0.1 0.97-0.1 RDS(ON) < 120m (VGS = -10V)
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OT-23
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Elettro
Abstract: marking SMD crystal CODES F100 SX6035 SX6035A
Text: Pb Quartz Crystal : SX6035 , SX6035A General description SMD Crystals suitable for any kind of application and realized in AT Cut to get best performance available temp. stability <±4ppm in the range –20°C / +70°C . Widely used in telecomm. Field and PC
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SX6035
SX6035A
45MHz
30ppm
25ppm
20ppm
15ppm
10ppm
Elettro
marking SMD crystal CODES
F100
SX6035
SX6035A
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