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    MARKING D45 Search Results

    MARKING D45 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG8097/B Rochester Electronics LLC 8097 - Math Coprocessor - Dual marked (8506301ZA) Visit Rochester Electronics LLC Buy
    5490/BCA Rochester Electronics LLC 5490 - Decade Counter - Dual marked (M38510/01307BCA) Visit Rochester Electronics LLC Buy
    5405/BCA Rochester Electronics LLC 5405 - Gate - Dual marked (M38510/00108BCA) Visit Rochester Electronics LLC Buy
    54AC20/SDA-R Rochester Electronics LLC 54AC20/SDA-R - Dual marked (M38510R75003SDA) Visit Rochester Electronics LLC Buy
    UHD503R/883 Rochester Electronics LLC UHD503R/883 - Dual marked (5962-8855101CA) Visit Rochester Electronics LLC Buy

    MARKING D45 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    T85/55

    Abstract: 6c marking 24vdc 125v 15a led matrix 8 8 one colour KG41 KG44 Si 6823
    Text: KG series Power rocker switches Distinctive features and specifications ❑ Illuminated or non-illuminated ❑ Protected rocker ❑ Sealed to IP 65 ❑ Laser marking ❑ VDE EN 61058-1 approved ELECTRICAL SPECIFICATIONS D MATERIALS • Currrent/voltage rating :


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    12VDC, 24VDC, 250VAC 14VDC T85/55 6c marking 24vdc 125v 15a led matrix 8 8 one colour KG41 KG44 Si 6823 PDF

    t85/55

    Abstract: KG35 marking code KG35 KG44-1R 24vdc to 12vdc LED driver KG44 KG41 led matrix 8 8 one colour KG49 KG46
    Text: KG series Power rocker switches Distinctive features and specifications ❑ Illuminated or non-illuminated ❑ Protected rocker ❑ Sealed to IP 65 ❑ Laser marking ❑ VDE EN 61058-1 approved ELECTRICAL SPECIFICATIONS D MATERIALS • Currrent/voltage rating :


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    12VDC, 24VDC, 250VAC 14VDC t85/55 KG35 marking code KG35 KG44-1R 24vdc to 12vdc LED driver KG44 KG41 led matrix 8 8 one colour KG49 KG46 PDF

    Untitled

    Abstract: No abstract text available
    Text: Pomona Model 4590 Mounting Base, Triple Banana Jack For Standard Banana Jack MATERIALS: Body: Polycarbonate Color: Black Marking : Pomona Electronics RATINGS: Operating Temperature: +115° C. +239° F. Max. ORDERING INFORMATION: Model 4590-* *=Color, -0 Black


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    2005\d4590 PDF

    D4555

    Abstract: No abstract text available
    Text: Pomona Model 4555 Do-It-Yourself Minigrabber® Test Clip MATERIALS: Body: Contact – Gold Plated Beryllium Copper, Spring – Stainless Steel Insulation: Glass filled nylon. Marking: “Pomona 4555” RATINGS: Voltage: Hand-held testing: 30VAC/60VDC Max.


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    30VAC/60VDC 00\D4555 D4555 PDF

    D4555

    Abstract: minigrabber
    Text: Pomona Model 4555 Do-It-Yourself Minigrabber® Test Clip MATERIALS: Body: Contact – Gold Plated Beryllium Copper, Spring – Stainless Steel Insulation: Glass filled nylon. Marking: “Pomona 4555” RATINGS: Voltage: Hand-held testing: 30VAC/60VDC Max.


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    30VAC/60VDC 6/9/99trolled \Release\DataSheets\FlukeDataSheet\d4555 D4555 minigrabber PDF

    C10-A10FX

    Abstract: C12-A21BX 220v ac voltage stabilizer circuit C12-A21FX C10-A10BX solid state 220v ac stabilizer 220V AC Automatic Voltage stabilizer transistor A1232 releco relay 24v dc 10a C12-A21X
    Text: IRC Interface and general application The new IRC relays Button and lockable lever push-to-test, lift-to-lock Mechanical and LED indication as standard Coil voltage marked on the top of the relay Marking label Optional in-built suppressors circuits and bridge rectifier for AC/DC relays


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    E-28923 C10-A10FX C12-A21BX 220v ac voltage stabilizer circuit C12-A21FX C10-A10BX solid state 220v ac stabilizer 220V AC Automatic Voltage stabilizer transistor A1232 releco relay 24v dc 10a C12-A21X PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT80 Unit : mm Weight : 22g typ. Package TSB-5PIN 800V 45A 品名 Type No. • • SIP • UL E142422 • + ① ~∼ ∼ ② ③④ − ⑤ + SHINDENGEN D45XT 80 0264 ∼ ∼ 27 ∼ −


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    D45XT80 E142422 D45XT J534-1 PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 Phase Bridge Diode Large I o Single In-line Package OUTLINE D45XT160 Unit : mm Weight : 22g typ. Package TSB-5PIN 1600V 45A • • SIP • UL E142422 • + ① ~∼ ∼ ② ③④ − ⑤ + SHINDENGEN D45XT 160 0264 ∼ ∼ 27 ∼ − 管理番号(例)


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    D45XT160 E142422 D45XT J534-1 PDF

    D45X

    Abstract: 330 marking diode SHINDENGEN DIODE SHINDENGEN
    Text: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g (typ.) Package:TSB-5PIN 1600V 45A 特長 • 3相ブリッジ • 薄型 SIP パッケージ • UL E142422


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    D45XT160 E142422 D45XT J534-1 D45X 330 marking diode SHINDENGEN DIODE SHINDENGEN PDF

    D45X

    Abstract: J534 D45XT80 SHINDENGEN DIODE D45Xt-80
    Text: 大容量 シングルインライン型 3 Phase Bridge Diode Large I o Single In-line Package •外観図 OUTLINE D45XT80 Unit : mm Weight : 22g (typ.) Package:TSB-5PIN 800V 45A 特長 品名 Type No. • 3相ブリッジ • 薄型 SIP パッケージ


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    D45XT80 E142422 D45XT 1mst10ms J534-1 D45X J534 D45XT80 SHINDENGEN DIODE D45Xt-80 PDF

    D45H11

    Abstract: D45H11J3
    Text: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2006.04.07 Page No. : 1/5 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 Features • Low VCE sat • High BVCEO • Excellent current gain characteristics • Pb-free package


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    C607J3 D45H11J3 O-252 UL94V-0 D45H11 D45H11J3 PDF

    D45H11

    Abstract: D45H11J3 C607J3
    Text: Spec. No. : C607J3 Issued Date : 2005.07.11 Revised Date :2009.02.04 Page No. : 1/6 CYStech Electronics Corp. Low Vcesat PNP Epitaxial Planar Transistor D45H11J3 BVCEO IC RCESAT -80V -8A 75mΩ Features • Low VCE sat • High BVCEO • Excellent current gain characteristics


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    C607J3 D45H11J3 O-252 UL94V-0 D45H11 D45H11J3 C607J3 PDF

    Untitled

    Abstract: No abstract text available
    Text: 大容量 シングルインライン型 3 Phase Bridge Diode Large I o Single In-line Package •外観図 OUTLINE D45XT80 Unit : mm Weight : 22g (typ.) Package:TSB-5PIN 800V 45A 特長 品名 Type No. • 3相ブリッジ • 薄型 SIP パッケージ


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    D45XT80 E142422 D45XT PDF

    Untitled

    Abstract: No abstract text available
    Text: 3 Phase Bridge Diode 大容量 シングルインライン型 Large I o Single In-line Package •外観図 OUTLINE D45XT160 Unit : mm Weight : 22g (typ.) Package:TSB-5PIN 1600V 45A 特長 • 3相ブリッジ • 薄型 SIP パッケージ • UL E142422


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    D45XT160 E142422 D45XT PDF

    D44VH10/D45VH10

    Abstract: No abstract text available
    Text: , One. 20 STERN AVE. TELEPHONE: 973 376-2922 SPRINGFIELD, NEW JERSEY 07081 (212)227-6005 U.S.A. FAX: (973) 376-8960 D44VH10 (NPN), D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulator's and


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    D44VH10 D45VH10 D44VH10/D45VH10 PDF

    D44H8G

    Abstract: D45H11G D44H11G D45H8G D44H D44H11 D44H8 D45H D45H11 D45H8
    Text: D44H Series NPN , D45H Series (PNP) Preferred Devices Complementary Silicon Power Transistors These series of plastic, silicon NPN and PNP power transistors can be used as Ăgeneral purpose power amplification and switching such as output or driver stages in applications such as switching regulators,


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    D44H8, D45H8 D44H11, D45H11 D44H8G D45H11G D44H11G D45H8G D44H D44H11 D44H8 D45H D45H11 D45H8 PDF

    D44VH10G

    Abstract: D44VH10 D45VH10 D45VH10G
    Text: D44VH10 NPN , D45VH10 (PNP) Complementary Silicon Power Transistors These complementary silicon power transistors are designed for high-speed switching applications, such as switching regulators and high frequency inverters. The devices are also well-suited for drivers


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    D44VH10 D45VH10 D44VH10G D44VH10 D45VH10 D45VH10G PDF

    Untitled

    Abstract: No abstract text available
    Text: D44H11FP D45H11FP Complementary power transistors Preliminary data Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi


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    D44H11FP D45H11FP O-220FP D45H11FP O-220FP PDF

    Untitled

    Abstract: No abstract text available
    Text: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 1 3 TO-220 Description The devices are manufactured in low voltage multi


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    D44H8 D44H11 D45H8 D45H11 O-220 D44H8 PDF

    D44H8

    Abstract: Part Marking TO-220 STMicroelectronics 4213 D44H11 D45H11 D45H8 ST MARKING to220
    Text: D44H8 - D44H11 D45H8 - D45H11 Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed TAB Applications ■ Power amplifier ■ Switching circuits 3 1 TO-220 Description The devices are manufactured in low voltage multi


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    D44H8 D44H11 D45H8 D45H11 O-220 D44H8 Part Marking TO-220 STMicroelectronics 4213 D44H11 D45H11 ST MARKING to220 PDF

    D44H11FP

    Abstract: No abstract text available
    Text: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description The devices are manufactured in low voltage multi


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    D44H11FP D45H11FP O-220FP D44H11FP, D44H11FP PDF

    Untitled

    Abstract: No abstract text available
    Text: D44H11FP D45H11FP Complementary power transistors Features . • Low collector-emitter saturation voltage ■ Fast switching speed Applications ■ ■ Power amplifier 3 1 Switching circuits TO-220FP Description These low voltage transistors are housed in fully


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    D44H11FP D45H11FP O-220FP O-220FP D45H11FP PDF

    transistor 13003 AD

    Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
    Text: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)


    OCR Scan
    OT-23 KST06 KST05 KSC1623 BCW71 BCX70G BCX70H BCX70J BCX70K BCX71G transistor 13003 AD ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v PDF

    Untitled

    Abstract: No abstract text available
    Text: 07 Q E s — • O3 fU <— i O U m- Operating Point Ruhestellung Rest Position Zulassige Endstellung: Gehauseoberkante, keine Auflagekraft zulassig. D £ O • O (D c e Approved end position: Upper edge of case, no supporting force allowed. Aufschrift Marking


    OCR Scan
    2768-m DE-91275 /ems/d4/sts/d459-rlaa PDF